Characterization and modeling of hot carrier injection in LDMOS for L-band radar application

This paper reports a methodology to correlate Hot Carrier Injection (HCI) degradation mechanism and electrical figures of merit on Lateral-Diffused Metal-Oxide-Semiconductor (LDMOS) transistor. This method is based on RF life test in radar operating conditions coupled to a high drain voltage in order to make visible HCI degradation. We propose drain current modeling vs. time based on a simple extraction procedure. The electron density trapped in the oxide is extracted from hot carrier induced series resistance enhancement model (HISREM - i.e. ΔR_d model). From this methodology, the degradation of RF-LDMOS due to HCI is quantified and could be simulated with EDA.     

Effect of longitudinal variations in current injection and carrier concentration in laser diodes

The effects of nonuniform current injection along the length of a semiconductor laser are investigated using multiple segmented stripe contact lasers. The results of the experiments are analyzed with a model for which the carrier concentration, gain, and photon density are functions of position. From the model, it was determined that nonuniform current injection caused large variations in the optical field within the laser, and the field produced a redistribution of electrical carriers in the active region. The nonlinearities in the light versus current measurements were explained by the redistribution of carriers as the optical field changed.     

Electrical modeling of the effect of beam profile for pulsed laser fault injection

This paper presents a detailed simulation-based analysis of the influence of the laser spot shape and size on the parametric and logical transient errors that can be injected into a digital device. The effect of the impact of a Gaussian laser beam is simulated at the electrical level for different pulse durations. Results illustrate the complex interaction between the electrical function and the laser perturbation, with potential implications for secure circuit design.     

Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization

Key aspects related to the localization of the hot-carrier induced damage in short channel MOSFET's are reviewed. Emphasis is put on the analysis, modeling and characterization of the degradation of device parameters caused by defects created locally beside the drain junction. Numerical simulations as well as analytical models predicting the post-stress performance are presented, compared and their limits of validity highlighted. Relevant experimental results, concerning the evolution of the static characteristics I_D(V_G, V_D) during transistor aging, are thoroughly discussed and efficient methods for the extraction of the defective region parameters are proposed. More specific techniques (charge pumping, noise spectroscopy, floating gate current, gated diode leakage), used for the characterization of aging induced defects, are evaluated from the point of view of their capability to cope with the localized nature of the defects. The merits of silicon on insulator structures and other technological solutions proposed for the attenuation of hot carrier effects are briefly commented.     

频谱分割ASE注入波长锁定FP-LD的研究

文章分析了频谱分割放大自发辐射(ASE)注入波长锁定法布里-珀罗激光器(FP-LD)光谱随注入种子光光功率的变化情况.实验研究了ASE频谱分割光源注入波长锁定FP-LD的增益和边模抑制比(SMSR)随注入ASE光功率以及FP-LD注入电流的变化关系.最后比较了经过不同频谱分割方法的注入波长锁定光信号在波分复用-无源光网...     

Semi-analytical modeling and analysis in three dimensions of the optical carrier injection and diffusion in a semiconductor substrate

In order to be faster and more precise than any numerical technique for the computation of the photo-induced plasma in semiconductor, an analytical solution has to be developed. In this paper, the Hankel transform is used to simplify the solution of the differential equation of second order with nonconstant coefficient, known as the diffusion equation. The resulting expression of the three-dimensional (3-D) carrier density includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions.     

An evaluation of injection modeling

Charge storage in the base of an MTL structure is evaluated using two-dimensional simulation. The results are compared to those predicted by the method of injection modeling as developed by H.H. Berger. The results show that injection modeling yields pessimistic estimates of the stored base charge for a homogeneous base device. For the more important case of a graded base structure, injection modeling yields estimates which are very close to those computed in the two-dimensional simulation.     

Bipolar transistor modeling of avalanche generation for computer circuit simulation

An avalanche generation model is developed and incorporated into computer circuit analysis programs SLIC and NICAP. A modified form of Miller's empirical expression for generation is found to agree well with measured data for Western Electric and commercial n-p-n transistors. Measurement techniques and parameter determination for the three model coefficients are discussed. Equation constraints appropriate for computer implementation are presented.     

Minority carrier injection and storage into a heavily doped emitter: Approximate solution for auger recombination

An analytic solution for the injected carrier distribution in a linearly graded, heavily doped region is given in terms of Hermite polynomials. The properties of this distribution are compared with those for the more usual diffusion length solution. An expression is given for the effect on high frequency response of the stored charge in the emitter region of a bipolar transistor.     

One-dimensional modeling of the gain and temperature in asupersonic chemical oxygen-iodine laser with transonic injection ofiodine

A simple 1-D model is developed for the fluid dynamics and chemical kinetics in the chemical oxygen iodine laser (COIL). Two different I₂ dissociation mechanisms are tested against the performance of a COIL device in our laboratory. The two dissociation mechanisms chosen are the celebrated mechanism of Heidner (1983) and the newly suggested mechanism of Heaven (2001). The gain calculated using Heaven's dissociation mechanism is much lower than the measured one. Employing Heidner's mechanism, a surprisingly good agreement is obtained between the measured and calculated gain and temperature over a wide range of the flow parameters. Other predictions of the model (larger mixing efficiency and higher temperature with a leak opened downstream of the resonator and gain decrease along the flow) are also in agreement with the experimental observations     

有机电致发光器件载流子注入效率的研究

文章从电极材料、结构、处理方法等角度出发,详细介绍了提高有机电致发光（ＥＬ）器件载流子注入效率的研究现状。     

Fabry-Perot laser diode modeling

A model of a single-mode Fabry-Perot semiconductor laser that predicts laser performance in analog transmission has been developed. The model is based on a time domain simulation of the rate equations for a semiconductor laser. The model can be used to simulate laser characteristics such as light versus current, step response, harmonic and intermodulation distortion. Simulated distortion results agree with experimentally measured results     

Multilayer GaAs injection laser

Experimental data are presented for multijunction GaAs lasers made by vapor-phase epitaxial growth in the form ofp-n-p-n-p-nstructures. The overall thickness of the four inside layers was 5 microns for the multilayer material for which experimental data are given. The diodes made from this material exhibited current-controlled negative-resistance characteristics. The emitted output beams of the multilayer lasers were extremely narrow, with the beam diverging only 0.5 degree in the direction transverse to the junction planes. The corresponding near-field patterns for these lasers have, in addition to the expected bright laser regions, almost fifty lines spaced about 1 micron apart and almost equally bright. The current thresholds at 77°K for the multijunction lasers are three to four times higher than single-junction laser thresholds and the incremental output quantum efficiencies of these lasers were more than unity, 1.1.     

Suppressed sidewall injection magnetotransistor with focused emitter injection and carrier double deflection

We present a new linear magnetic field sensor (MFS) made in standard CMOS technology with a sensitivity of 1.26 percent/mT (1 percent/T ≡ 0.01 T^-1). The device is a dual-collector lateral magneto-transistor (LMT) with suppressed injection of the emitter sidewalls, confinement of the injection to the center bottom of the emitter-base junction, and double deflection of carriers. Desirable collector current levels can be set without major loss of sensitivity by choosing from a wide range of operating points.     

Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers

A bidimensional simulation shows that the lateral carrier injection in etched active region of multiple-quantum-well DFB lasers represents a large fraction of the injected current, leading to improved carrier homogenization in the wells. This increases the average carrier density substantially and provides a much higher gain for the same injected current, depending on detailed device structure.     

SOI横向栅控双极晶体管特性研究

横向SOI双极技术具有工艺简单、寄生电容小等优势,被认为是射频领域最有希望的技术之一。为了得到可用于射频领域的SOI横向栅控双极晶体管特性,采用一种SOI横向栅控双极晶体管器件结构,研究范围包括工艺实现过程和器件性能特性。实验表明,该器件工艺与平面CMOS工艺完全兼容,通过对栅端电压的控制,可以实现hFE在一个较大的范围内自由调节,具有更大的使用灵活性。     

InGaAsP carrier injection modulator integrated with DFB LD

Basic characteristics for InGaAsP carrier injection modulators integrated with distributed feedback laser diodies (DFB LDs) have been investigated. 450Mbit/s nonreturn-to-zero (NRZ) pulse modulation with time-averaged spectral line-width as narrow as 600 MHz has been achieved.     

Minority carrier effects in GaInP laser diodes

Using a top-contact window, we have observed emission from a direct-gap monitor layer placed at the interface between the p-cladding and contact layers of an AlGaInP laser diode when driven under forward bias, thereby providing direct evidence for minority carrier (electron) leakage in these devices. We have further shown that the leakage is due to both drift and diffusion and, using pulsed optical excitation of a device under bias, we have determined a value of 170±10 cm² V^-1 s^-1 for the mobility of minority carriers in the p-type cladding layer by a time-of-flight experiment. The data was analyzed using a simulation which takes account of the influence of recombination times in the well and monitor layer on the overall time response of the structure. The measured mobility corresponds to electron transport through the X-conduction band. We show that the drift component of the leakage current reduces the differential efficiency and is responsible for the decrease in external differential efficiency with increasing temperature. Because the leakage occurs by a mixture of drift and diffusion, the transit time does not decrease significantly with increasing drive current; however the impact of leakage on the modulation response is predicted to be very small unless the leakage becomes a substantial fraction of the total current     

Precise modeling of hot carrier gate current in short-channelMOSFET's

A powerful model which considers the fact that the values of the channel and carrier temperatures T and T_c vary with position in the bulk and channel is considered. It reveals that the energy distribution of hot carriers deviates from the well-known Maxwellian distribution by a small but nonnegligible perturbation and evaluates the dependence of this deviation of the device technology, geometry, and biasing conditions. The model helps to remove important discrepancies between the old hot-carrier models and measurements