Surface morphology control of polymer films by electron irradiation and its application to superhydrophobic surfaces

A simple and controllable one-step method to fabricate superhydrophobic surfaces on poly(tetrafluoroethylene) (PTFE) films is developed on the base of electron irradiation. When the thickness of PTFE films is higher than the penetration depth of electron beams, electrical charging occurs at the surface of the films because of the imbalance between the accumulation of incident electrons and the emission of secondary electrons. Local inhomogeneity of charge distribution due to this electrical charging results in the nonuniform decomposition of PTFE molecular bonds. As electron fluence increases, surface morphology and surface roughness of the films are dramatically changed. An extremely rough surface with micrometer-sized pores is produced on the surface of PTFE films by electron irradiation at a fluence higher than 2.5 × 10(17) cm(-2).Because of high surface roughness, the irradiated PTFE films exhibit superhydrophobic property with a water contact angle (CA) greater than 150° at fluences ranging from 4 × 10(17) to 1 × 10(18) cm(-2). The surface morphology and corresponding water CA can be controlled by simply changing the electron fluence. This electron irradiation method can be applicable to the fabrication of superhydrophobic surfaces using other low-surface-energy materials including various fluoropolymers.     

TiN镀层对真空系统释气率的影响概述

抑制射频真空系统表面二次电子倍增的一种常用方法是在系统内表面镀TiN薄膜,因为TiN薄膜具有较低的二次电子发射率.但对于真空应用来说,必须关注TiN薄膜的真空释气率问题.本文综述了国内外在TiN镀层真空特性方面的研究现状,其中涉及TiN镀层低释气率的物理机制、产生低释气率TiN薄膜的最优化镀膜条件以及两种常用镀膜方法的比较.     

Effects of secondary electron emission from a floating surface on the plasma sheath

The paper describes the region between a Maxwellian plasma source and a floating surface by a 1D-3 V fully kinetic, electrostatic particle simulation. The electric field is self-consistently computed from the Poisson equation. The secondary electron emission is modelled by considering an expression for the secondary emission coefficient dependent on the primary electron energy and surface materials and a realistic secondary electron distribution function is introduced at the collector surface. The model is able to simulate the space-charge-limited conditions as well as the positively charged wall cases.     

The effect of Fe-doped magnesium oxide thin film in alternative current plasma display panel

In order to improve the discharge characteristics of MgO thin film as a protective layer in an alternative current plasma display panel, Fe-doped MgO thin films was introduced. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe-doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images.     

Recent progress on RE2O3-Mo/W emission materials

RE2O3-Mo/W cathodes were prepared by powder metallurgy method. La2O3-Y2O3-Mo cermet cathodes prepared by traditional sintering method and spark plasma sintering (SPS) exhibit different secondary emission properties. The La2O3-Y2O3-Mo cermet cathode prepared by SPS method has smaller grain size and exhibits better secondary emission performance. Monte carlo calculation results indicate that the secondary electron emission way of the cathode correlates with the grain size. Decreasing the grain size can decrease the positive charging effect of RE2O3 and thus is favorable for the escaping of secondary electrons to vacuum. The Scandia doped tungsten matrix dispenser cathode with a sub-micrometer microstructure of matrix with uniformly distributed nanometer-particles of Scandia has good thermionic emission property. Over 100 A/cm2 full space charge limited current density can be obtained at 950Cb. The cathode surface is covered by a Ba-Sc-O active surface layer with nano-particles distributing mainly on growth steps of W grains, leads to the conspicuous emission property of the cathode.     

Angular dependence of Auger electron emission from a single crystal specimen

An experimental study of the angular dependence of Auger electron emission from the (111) surface of a single crystal of copper has shown marked crystallographic effects. The equipment, a LEED/AES system incorporating an energy analyzing Faraday cup, is described. The results are discussed in terms of diffraction and inherent angular dependence in the Auger emission.     

Chemical method to increase extreme ultraviolet microchannel-plate quantum efficiency. II. Analysis and optimization

Enhancement of the extreme ultraviolet quantum detection efficiency (QDE) of microchannel plate (MCP) detectors by use of a wet chemical method is examined. It is shown that the chemical process of ion exchange, in addition to physical processes that increase surface roughness and decrease surface density, augments the secondary electron emission coefficient, which in turn increases the quantum detection efficiency of the input MCP. The method has been demonstrated with nitric acid, acetic acid, or water used as the active reactant. By monitoring and optimizing the ion-exchange process, we achieved a 2.6-4.4 increase in the MCP QDE from 1216 to 304 A, respectively, with an absolute QDE of approximately 50% at 304 A.     

掺硼金刚石薄膜二次电子发射特性的研究

掺硼金刚石薄膜具有负电子亲和势和良好的电子运输性能且容易制备,作为冷阴极材料在图像显示技术和真空技术等方面都有着巨大的应用价值,引起人们的注意.从二次电子发射的机理以及影响二次电子发射系数的因素等方面,对如何利用MPCVD法制备出高二次电子发射系数的掺硼金刚石薄膜进行了综述.论述表明通过合适的工艺条件,对薄膜表面进行适当的处理,是可以制备出高二次电子发射系数的阴极用金刚石薄膜的.     

Characterization of Al2O3 films deposited by various methods

A comparative study of electron emission characteristics was made for thin films of Al₂O₃ deposited by the techniques of r.f. sputtering, chemical vapour desposition and post-oxidation of vacuum-evaporated aluminum films. A single pusle method was used with a retarding field analyzer for measurement of the yield in secondary electron emission. Relative work functions were determined with respect to gold by a diode gun assembly and the retarding potential method. All measurements were made in an ultrahigh vacuum system. X-ray photoelectron spectroscopy and scanning electron microscopy were used for comparison of the stoichiometry and morphology of the films, and the relative effects of these characteristics on the emission were assessed.The emission characteristics were analyzed semi-empirically by making use of Dionne's theory for secondary electron emission. On the basis of the experimental results, the use of these films in continuing dynodes (for electron multipliers) is proposed. The r.f. sputtered films were found to be the most suitable electron emissive layers.     

空间材料二次电子发射过程的理论研究

航天器充放电效应故障大多都会引起卫星灾难性事故,对航天器在轨安全运行产生较大的影响。空间材料的二次电子发射系数是决定卫星表面带电速率和充电平衡电位水平的重要材料特征参数,对于卫星表面带电的预测及卫星带电设计选材具有重要的意义。基于蒙特卡洛方法,从理论上分析了材料二次电子的产生、转移及逃逸过程,获得了材料二次电子发射系数的计算方法。实验结果表明该方法能较好地拟合材料二次电子发射系数随入射电子能量的变化趋势,为航天器充放电效应数值模拟和防护设计提供数据支持。     

低能原电子下形状因子对金属曲面二次发射系数的影响

提出金属曲面二次电子发射的形状因子概念,并从理论上论述了形状因子对曲面二次电子发射系数的影响。从半经验理论出发,推导出低能原电子入射下,金属曲面二次发射系数与入射角的近似关系,并结合曲面形状,得到形状因子一般表达式,进而求出金属曲面的二次发射系数。以圆柱曲面为例,计算其形状因子和低能入射下其二次发射系数,并用实验数据证明了该理论的正确性,最后对结果进行了讨论,得到如下结论:在低能原电子入射情况下,金属曲面二次发射系数为金属材料二次发射系数与形状因子相乘所得。     

二次电子发射系数的光电测试方法研究

采用电子枪产生的电子进行材料二次电子发射系数的测量与研究,该方法由于实现过程较为复杂且很难获得微小流量入射原电子等限制了其应用。故采用紫外激发金属锌获得入射原电子的方法,利用高压电源和静电计,实现了材料二次电子发射系数的精确测量。在电子倍增器中分别测试单级打拿极二次电子发射系数和倍增器增益,比较后获得了材料二次电子发射系数精确测量的方法。利用该方法,研究了氧化镁材料的二次电子发射性能,得到了基于氧化镁发射材料的电子倍增器增益。     

Characteristics of a well-adherent nanocrystalline diamond thin film grown on titanium in Ar/CH4 microwave CVD plasma

The fabrication of a well-adherent diamond film on titanium and its alloys is always problematical due to the different thermal expansion coefficients of the two materials, the complex nature of the interlayer formed during diamond deposition, and the difficulty in achieving very high nucleation density. In this work, well-adherent and smooth nanocrystalline diamond (NCD) thin film is successfully deposited on pure titanium substrate by microwave plasma-assisted chemical vapor deposition (MWPCVD) method in Ar/CH₄ environment. It is found that the average grain size is less than 20 nm with a surface roughness value as low as 12 nm. Morphology, surface roughness, diamond crystal orientation and quality are obtained by characterizing the sample with field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and Raman spectroscopy, respectively. Detailed experimental results and mechanisms for NCD film deposition are discussed.     

真空中陶瓷绝缘子的沿面闪络现象及其研究进展

陶瓷绝缘子沿面闪络是制约电真空器件绝缘性能、影响设备正常运行的关键因素之一。本文介绍了关于真空中陶瓷绝缘子沿面闪络物理机制的各种假说，着重阐述了二次电子发射雪崩理论，分析了影响陶瓷绝缘子闪络电压的各种因素，提出了从陶瓷材料角度提高闪络电压的方向，总结了绝缘子沿面闪络现象的研究现状，展望了今后的研究方向与发展趋势。     

利用前后处理技术改进钛／硅基板上的类金刚石场发射特性

采用微波等离子体化学气相沉积系统存钛/硅基板上沉积类金刚石薄膜,并利用拉曼光谱仪、扫瞄式电子显微镜及原子力显微镜研究了氢等离子体前处理及快速退火后处理对类金刚石薄膜场发射特性之影响.在沉积类金刚石薄膜之前,钛/硅基板使用了两种前处理技术:第一种为研磨金刚石粉末,第二种为研磨金刚石粉末后外加氢等离子体刻蚀处理.成长类金刚石薄膜后进行快速退火处理.发现不论是氢等离子体前处理还是快速退火后处理皆能改善场发射特性,其中经退火后处理的场发射特性比氢等离子体前处理的场发射特性改善更明显.其因之一在于快速退火后处理可在类金刚石薄膜表而形成sp2丛聚,提供了很多的场发射子,也同时增加了表面粗糙度;另一个原因可能是在快速退火后处理期间会使类金刚石薄膜进一步石墨化,因而提供了许多电子在通过类金刚石薄膜时的传输路径.研究结果表明:利用适当的前后处理技术可改进类金刚石薄膜的场发射特性,进而做为冷阴极材料之应用.     

Ion-induced secondary electron emission from MgO and Y2O3 thin films

We report a detailed study of the electron emission from MgO and Y₂O₃ induced by the impact of 0.1-1 keV Ar⁺ ions. The mechanisms of ion-induced secondary electron emission from oxides are far less understood because charging of the target surface during ion irradiation prohibits the precise measurement of electron yield. For this study, targets were prepared by depositing 20 nm thick films of MgO and Y₂O₃ on the semi-conducting SnO₂ substrate, which helps in charge neutralization. Additionally, a pulsed ion beam was used to further reduce the surface charging. It was found that the electron yield of both targets increases with energy of the ion. However, at a given ion energy the electron yield of Y₂O₃ was larger than MgO. Another important result of this study is that the electron emission from these large band gap insulators did not show any threshold effect, in contrast to the metal targets. It may be due to local reduction of the band gap through electron promotion processes. In addition, a Monte Carlo program was used to calculate the yield of secondary electrons excited by projectile ions, recoiling target atoms and electron cascades, and average escape depth of the secondary electrons emitted from the MgO and Y₂O₃ thin films.     

Effect of periodic surface roughness on V(z) curves for the line-focus acoustic microscope

A specimen with a periodic surface profile is considered to estimate the effect of surface roughness on the V(z) curve for the line-focus acoustic microscope. The Fourier optics approach is used to obtain the response of the lens and the Rayleigh-Fourier method is used to obtain the reflection coefficients for plane wave incidence from the fluid side on the periodic surface. An integral expression is obtained to calculate V(z) curves for periodic surface profiles. The V(z) curves are used to calculate the leaky Rayleigh wave velocities by applying the fast Fourier technique. Numerical results are presented to display the effect of sinusoidal surface roughness on the V(z) curves and the corresponding leaky Rayleigh wave velocities.     

Vakuummikro‐ und Vakuumnanoelektronik mit Feldemission

Vacuum microelectronics and nanoelectronics with field emission — features of breakdown voltage in vacuum gaps lower than 10 μm Further miniaturization in vacuum electronics will be possible only with field‐emitter cathodes. However in microscale vacuum gaps in the range 10 μm field emission is a dominant process in gas breakdown process, leading to signif icant deviations from the traditional Paschen's Law. At first a significant reduction of breakdown voltage is observed. The high surface‐to‐volume ratio in microscale dimensions 3 μm and in interactions with gas desorption, outgassing and gas ionization during electron field‐emission give a ignition and stabilization of micro plasmas (glow discharges) or/and micro arcs, which exist largely independent of surrounding vacuum, atmospheric or over pressure. In this range the Paschen's Law is invalid. This is an interesting approach which opens up new dimensions for basic research, field emission‐driven micro plasmas and for novel fieldemitter applications in vacuum electronics and plasma technology.     

介质材料带电对二次电子发射影响的研究

航天器充放电效应故障大多都会引起卫星灾难性事故,对航天器在轨安全运行产生较大的影响。二次电子发射系数是决定卫星表面带电速率和充电平衡电位水平的重要材料特征参数。研究介质材料表面带电对二次电子发射影响的理论模型,分析表面正电位激发和负电位阻挡效应,并给出计算结果,为航天器充放电效应数值模拟和防护设计提供数据支持。     

抑制多级降压收集极二次电子发射的研究进展

简述了热解石墨、高纯各向同性石墨和无氧铜材料的二次电子发射特性,以及离子束表面改性对二次电子发射特性的影响。分析表明热解石墨和高纯各向同性石墨的二次电子发射系数均明显低于无氧铜的二次电子发射系数,并且通过离子束表面改性后二次电子发射系数能够得到进一步的降低。同样的,离子束表面改性后的无氧铜的二次电子发射系数也得到一定的降低,并且还有很大的发展空间。