Pyroelectric properties of arrayed BaTiO3 system thick film for uncooled IR detector

The Sr and Ca added to BaTiO₃ in order to shift transition temperature near room temperature. The donor (Yb₂O₃) and acceptor (MnCO₃) impurities were added to the (Ba,Sr,Ca)TiO₃ powder for the improvement of structural and electrical properties. The (Ba,Sr,Ca)TiO₃ powder was made by sol-gel method and the thick films were fabricated by screen-printing. We fabricated array type thick films. The 1 mm × 3 mm array thick films were arranged 2 × 8. Relative dielectric constant and dielectric loss of Yb₂O₃ 0.1 mol% doped (Ba,Sr,Ca)TiO₃ array thick film were 1068 and 2.8%, respectively at Curie temperature, 44 °C. Pyroelectric coefficient and F.M.D* showed 21.7 × 10⁻⁹ C/cm² K and 3.2 × 10⁻⁹ C cm/J, respectively.     

Effect of tungsten on the electrochromic behaviour of sol-gel dip coated molybdenum oxide thin films

The paper describes the results obtained on the performance of Mo oxide and mixed W/Mo oxide thin films for possible electrochromic applications. Mo and W/Mo oxide films were deposited on conductive (FTO) glass substrates using sol-gel dip coating method. The films were annealed at 250 °C for 30 min. The structure and morphology of Mo and W/Mo oxide films were examined using XRD, SEM and EDS. XRD results indicate the amorphous nature of the Mo and W/Mo oxide films annealed for 30 min. The CV measurements revealed that the films prepared with 10 wt.% of tungsten exhibit maximum anodic/cathodic diffusion coefficient of 24.99/12.71 × 10⁻¹¹ cm²/s. The same film exhibits a maximum transmittance variation (ΔT%) of 83.4% at 630 nm and 81.06% at 550 nm with the optical density of 1.00 and 1.13 respectively.     

Thermophysical properties of aluminum oxide and molybdenum layered films

The thermal diffusivity of aluminum oxide (Al₂O₃) films and the thermal boundary resistance between Al₂O₃ and molybdenum (Mo) films were investigated using ‘rear heating/front detection (RF) type’ picosecond and nanosecond thermoreflectance systems. Amorphous Al₂O₃ films sandwiched between Mo films (Mo/Al₂O₃/Mo) were prepared on fused silica substrates by RF magnetron sputtering using Al₂O₃ and Mo targets. The thicknesses of the Al₂O₃ and Mo layers were 0.5-100 nm and 70 nm, respectively. The thermal diffusivity of the amorphous Al₂O₃ films was found to be 9.5 × 10^− 7 m²/s. The thermal boundary resistance between Al₂O₃ and Mo was 1.5 × 10^− 9 m²K/W, corresponding to the thermal resistance of a 4.2 nm thick Al₂O₃ film or a 77 nm thick Mo film. However, the thermal diffusivity of the amorphous Al₂O₃ film is approximately one twelfth that of bulk polycrystalline Al₂O₃. This difference was attributed to the smaller mean free path of phonons in amorphous Al₂O₃ due to its disordered structure.     

Effects of molybdenum content on the structure and mechanical properties of as-cast Ti-10Zr-based alloys for biomedical applications

The effects of molybdenum on the structure and mechanical properties of a Ti-10Zr-based system were studied with an emphasis on improving the strength/modulus ratio. Commercially pure titanium (c.p. Ti) was used as a control. As-cast Ti-10Zr and a series of Ti-10Zr-xMo (x = 1, 3, 5, 7.5, 10, 12.5, 15, 17.5 and 20 wt.%) alloys prepared using a commercial arc-melting vacuum pressure casting system were investigated. X-ray diffraction (XRD) for phase analysis was conducted with a diffractometer. Three-point bending tests were performed to evaluate the mechanical properties of all specimens. The experimental results indicated that these alloys had different structures and mechanical properties when various amounts of Mo were added. The as-cast Ti-10Zr has a hexagonal α′ phase, and when 1 wt.% Mo was introduced into the Ti-10Zr alloy, the structure remained essentially unchanged. However, with 3 or 5 wt.%, the martensitic α″ structure was found. When increased to 7.5 wt.% or greater, retention of the metastable β phase began. The ω phase was observed only in the Ti-10Zr-7.5Mo alloy. Among all Ti-10Zr-xMo alloys, the α″-phase Ti-10Zr-5Mo alloy had the lowest elastic modulus. It is noteworthy that all the Ti-10Zr and Ti-10Zr-xMo alloys had good ductility. In addition, the Ti-10Zr-5Mo and Ti-10Zr-12.5Mo alloys exhibited higher bending strength/modulus ratios at 20.1 and 20.4, respectively. Furthermore, the elastically recoverable angles of these two alloys (26.4° and 24.6°, respectively) were much greater than those of c.p. Ti (2.7°). Given the importance of these properties for implant materials, the low modulus, excellent elastic recovery capability and high strength/modulus ratio of α″ phase Ti-10Zr-5Mo and β phase Ti-10Zr-12.5Mo alloys appear to make them promising candidates.     

Thermal stability of sputtered Mo/polyimide films and formation of MoSe2 and MoS2 layers for application in flexible Cu(In,Ga)(Se,S)2 based solar cells

Molybdenum (Mo) films with a thickness of about 800 nm were room temperature sputtered onto flexible polymeric substrates. Upilex® films were chosen as substrates on the basis of their high thermal endurance and reduced coefficient of thermal expansion. Thermal stability of Mo films has been proved by heat treatment of the Mo/Upilex® structures at a temperature comparable to that used in the preparation of the Cu(In,Ga)(Se,S)₂ absorber layer. A combination of high optical reflectance (maximum values of 75-80%), low electrical resistivity (about 30 μΩ cm) and a smooth surface free of cracks for heated films highlights their good thermal stability. The formation of MoSe₂ and MoS₂ layers, after selenization/sulfurization of the Mo/Upilex® structures, has been further investigated in view of their application as back contact layers in flexible CIGS based solar cells.     

Investigations for InAs/GaAs multilayered quantum-dot structure treated by high energy proton irradiation

This paper focuses on the high energy proton irradiation effect of InAs/GaAs multilayers quantum-dot (QD) wafer and photodetector. With high energy proton path simulation, the releases of proton energy and trap distribution in QD multilayers are predicted well. Treated by 1 and 3 MeV protons, all protons almost penetrate the multilayers of QD structures and stop deeply in GaAs substrate. InAs QD multilayer structures/Infrared photodetector have been irradiated by protons with different energies (1 and 3 MeV) and doses (1 × 10⁹∼ 1 × 10¹³ protons/cm²). The photoluminescence (PL) and photoresponsivity (PR) spectrum of samples were measured and discussed with as grown and post irradiation.     

Phases in copper-gallium-metal-sulfide films (metal=titanium, iron, or tin)

The incorporation of metal impurities M (M = Ti, Fe, or Sn) into CuGaS₂ films is investigated experimentally as a function of impurity concentration. Films are synthesized by thermal co-evaporation of the elements onto glass/Mo substrates heated to 400 °C-570 °C. The compositions of the resulting films are measured by energy-dispersive X-ray spectroscopy and the structures of the present phases are studied by X-ray diffraction. The formation of Cu-M-S ternary phases is observed in a wide range of conditions. Films of Cu-Ga-Ti-S, synthesized at 500 °C, show the presence of a cubic modification of CuGaS₂ and Cu₄TiS₄. Alloying of CuGaS₂ and tetragonal Cu₂SnS₃ is observed for substrate temperatures of 450 °C. A miscibility gap opens at 500 °C and above with separate Sn-rich and Ga-rich phases. Similarly, alloys of CuFeS₂ and CuGaS₂ are only found in Cu-Ga-Fe-S films synthesized at lower substrate temperature (400 °C), whereas at 500 °C a miscibility gap opens leading to separate Fe-rich and Ga-rich phases.     

Ordered mixed surface structures formed by coadsorption of dissimilar metal atoms on Cu(0 0 1)

We have found that various ordered mixed surface structures are formed by coadsorption of two dissimilar metal atoms on Cu(0 0 1) at room tepmerature, using low-energy electron diffraction (LEED) I-V analysis. As coadsorbates, we employed Mg, Bi, Li and K, and surface structures formed by the coadsorption systems of (Mg, Li), (Mg, K) and (Mg, Bi) are presented. A tensor LEED analysis provided detailed geometries of the coadsorbates and the substrate surface. It was found that the surface structures in the above three coadsorption sytems exhibit the restructuring of the Cu(0 0 1) surface. The phase separation into individual adsorbates does not take place, implying that some additional stabilization arises. We demonstrate two origins for the stabilization of the ordered mixed surface structures on Cu(0 0 1). Structures and features formed by the individual adsorption of Mg, Bi, Li and K atoms on Cu(0 0 1) are described first, then those of (2√2×√2)R45°-Mg,Li, (√5×√5)R26.7°-Mg,K, c(2×2)-Mg,Bi, and c(6×4)-Mg,Bi structures formed by the coadsorption are presented. We consider on the basis of the determined structural parameters the question why ordered mixed surface structures are formed instead of the phase separation.     

Effect of a NiO capping layer on the temperature dependence of the interlayer coupling in Co/Pt multilayer with perpendicular anisotropy

The effect of an ultra thin NiO(11 Å) capping layer on the temperature dependence of the interlayer coupling of a [Pt(26.5 Å)/Co(4 Å)]₃ multilayer with perpendicular anisotropy has been investigated. In the presence of the NiO(11 Å) capping layer, the interlayer coupling between the Co layers has been observed to demonstrate interesting temperature-dependent transitions. Only the antiferromagnetic (AF) interlayer coupling exists at T ≥ 270 K. With the decrease of temperature, the coexistence of ferromagnetic (FM) and antiferromagnetic interlayer coupling is observed in the temperature range of 220 K ≤ T≤ 270 K. When the temperature is lower than 220 K, only the ferromagnetic interlayer coupling exists. The temperature-dependent polarization of the Pt layers can be one of the origins for the observed AF-to-FM transitions.     

Characterization of ultra-thin TiO2 films grown on Mo(112)

Ultra-thin TiO₂ films were grown on a Mo(112) substrate by stepwise vapor depositing of Ti onto the sample surface followed by oxidation at 850 K. X-ray photoelectron spectroscopy showed that the Ti 2p peak position shifts from lower to higher binding energy with an increase in the Ti coverage from sub- to multilayer. The Ti 2p peak of a TiO₂ film with more than a monolayer coverage can be resolved into two peaks, one at 458.1 eV corresponding to the first layer, where Ti atoms bind to the substrate Mo atoms through Ti-O-Mo linkages, and a second feature at 458.8 eV corresponding to multilayer TiO₂ where the Ti atoms are connected via Ti-O-Ti linkages. Based on these assignments, the single Ti 2p_3/2 peak at 455.75 eV observed for the Mo(112)-(8 × 2)-TiO_x monolayer film can be assigned to Ti³⁺, consistent with our previous results obtained with high-resolution electron energy loss spectroscopy.     

Growth of silver nano-particle embedded in tellurite glass: Interaction between localized surface plasmon resonance and Er ions

In this paper we show a systematic study of the growth of silver nano-particles (NPs) embedded in an Erbium-doped tellurite glass with annealing time, aiming to a photoluminescence enhancement. The results indicate an improved or quenching of the photoluminescence due to an energy transfer mechanism in the coupling between NP’s electric dipoles and Er⁺³ transitions (⁴S_3/2 → ⁴I_15/2, ⁴F_9/2 → ⁴I_15/2 and ⁴I_13/2 → ⁴I_15/2).     

Structure of Pt3Co(1 1 0)c(2×4)-O surface studied by scanning tunneling microscopy

A Pt₃Co(1 1 0)c(2×4)-O surface has been investigated by scanning tunneling microscopy (STM), low-energy electron diffraction, and Auger electron spectroscopy. At a very initial oxidation stage exposed at 500°C, creation of missing and/or added row structures running to the [0 0 1] direction on clean Pt₃Co(1 1 0)2×1 surface was imaged from the steps. The surface is fully covered by a well-ordered c(2×4) structure at 2 L oxygen exposure. Atomic-resolution STM image shows the added row-type anti-phase Co-O zigzag chains along the [0 0 1] direction. Based on the images, the structure model for the c(2×4) surface was suggested as a first oxidized layer, which comes from the chemical reaction forming stoichiometric Co monoxide. Further oxygen exposure above 5 L, Co-O clusters imaged to large dots were formed on the surface with the size of about 5-7 Å.     

Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures

Zinc oxide/indium/zinc oxide multilayer structures have been obtained on glass substrates by magnetron sputtering. The effects of indium thickness on optical and electrical properties of the multilayer structures are investigated. Compared to a single zinc oxide layer, the carrier concentration increases from 8 × 10¹⁸ cm⁻³ to 1.8 × 10²⁰ cm⁻³ and Hall mobility decreases from 10 cm²/v s to 2 cm²/v s for the multilayer structure at 8 nm of indium thickness. With the increase of indium thickness, the transmittance decreases and optical band gap shifts to lower energy in multilayer structures. Results are understood based on Schottky theory, interface scattering mechanism and the absorption of indium layer.     

Superconductivity of p-type diamond (001) and (111) thin films: Ab initio calculations

The surface structure, electronic properties, lattice dynamics, and the electron-phonon coupling for p-doped diamond (001)-(2 × 1) and (111)-(2 × 1) thin films have been extensively investigated using ab initio methods within the virtual crystal approximation. The calculations of p-doped diamond thin films strongly favor dimer reconstruction of diamond surfaces. The physical origin of superconductivity of diamond (001)-(2 × 1), respectively, and (111)-(2 × 1) thin films which is higher than that of bulk diamond is systematically studied. It is showed that surface vibrational modes of diamond (001)-(2 × 1) surfaces give main contributions to superconducting transition temperature T_c, while T_c of diamond (111)-(2 × 1) surfaces is attributed to the combined action of surface and bulk vibrational modes. Therefore, at the highest concentration (13.98 × 10²¹ cm^− 3) T_c ≈ 56.5 K of diamond (111)-(2 × 1) surfaces is about twice as high as that of bulk and diamond (001)-(2 × 1) surfaces.     

Oscillatory behavior of the magnetic properties of Nd–Fe–B films with Mo and Mo–Cu additions

A series of Ta/NdFeB/Ta thin films with Mo and Mo–Cu additions embedded by alloying and by stratification have been prepared by r.f. sputtering. The influence of additions, their embedding mode, and annealing temperature on the structural and magnetic behavior of Ta/NdFeB/Ta thin films is presented. The use of additions of Mo and Mo–Cu leads to refined grain structure and improvement in the hard magnetic characteristics of Ta/NdFeB/Ta thin films. The Ta/[NdFeBMo(540 nm)/Ta films and Ta/[NdFeB(180 nm)/MoCu(dnm)] × n/Ta multilayer films present enhanced coercivities and M_r/M_s ratios in comparison with the Ta/NdFeB(540 nm)/Ta films. The stratification of Ta/NdFeB/Ta thin films with Mo–Cu interlayers leads to an oscillatory behavior of hard magnetic characteristics of the Ta/[NdFeB(180 nm)/MoCu(dnm)] × n/Ta multilayer films, when the thickness, d, of Mo–Cu interlayers varies by increments of 1 nm. When the thickness of Mo–Cu interlayers varies by increments of 2 nm the oscillatory behavior of the magnetic characteristics is not revealed. For a thickness of the Mo–Cu interlayer of 3 nm in the Ta/[NdFeB(180 nm)/MoCu(3 nm)] × 3/Ta thin films annealed at 650 °C, the c-axis of part of the hard magnetic Nd₂Fe₁₄B grains is oriented out-of-plane.     

Ab initio study of the adsorption of antimony and arsenic on the Si(110) surface

We have performed first principles total energy calculations to investigate the adsorption of Sb and As adatoms on the Si(110) surface using a (2 × 3) supercell. The energetics and atomic structures have been investigated in four atomic configurations. One structure is obtained by placing 1/3 of a monolayer (ML) of Sb (As) atoms on the Si(110) surface. The other three geometries are obtained by depositing 1 ML of Sb (As) atoms on the surface. In the first case the structure is formed by four trimers, in the second case the geometry is formed by zigzag atomic chains and in the third case the structure contains “microfacets”. The energetics results of the Sb adsorption show that for low coverage the tetrahedrons formed by the adsorption of 1/3 ML is the most stable configuration, while in the monolayer region the zigzag atomic chain is the most stable structure. However, the total energies of the trimer and microfacet structures are slightly higher, indicating that under some conditions, they may be formed. In an experimental report it has been suggested that the adsorption of 1/3 and 1 ML of Sb corresponds to the low and high coverage in the experiments of Zotov et al. [A. V. Zotov, V. G. Lifshifts, and A. N. Demidchik, Surf. Sci. 274, L583 (1992)]. On the other hand, our results of the As adsorption show that for low coverage, the tetrahedrons in the adsorption of 1/3 ML also give the most stable configuration. However, at the 1 ML coverage, a structure formed by microfacets is the most stable structure, in agreement with previous results.     

Fabrication of CIGS solar cells with a Na-doped Molayer on a Na-free substrate

The photovoltaic properties of CIGS cells on an alumina substrate were improved through the use of Na-doped Mo as the bottom layer of a Mo back contact. Na was supplied to the CIGS bulk region from an alumina/Na-doped Mo/Mo structure, similar to the Na diffusion from soda-lime glass. The diffusion of Na from the Na-doped Mo was controlled effectively compared to that from Soda-lime glass (SLG). The present results indicate that Na-doped Mo acts as a Na source material and that the Na amount can be controlled by adjustment of thickness of Na-doped Mo layer, without the use of an alkali barrier layer. The highest conversion efficiency of 13.34% (J_sc = 34.62 mA/cm², V_oc = 0.58 V and FF = 66%) for an active area of 0.45 cm² on an alumina substrate was obtained for 100 nm Na-doped Mo/1000 nm Mo.     

Surface phase transitions upon reduction of epitaxial WO3(1 0 0) thin films

The surface structure and morphology of WO₃(1 0 0) thin films were studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. The films experienced a net-reducing environment when annealed in oxygen at 800 K leading to surface phase transitions from p(2×2) to p(4×2), and from p(4×2) to a mix p(4×2) and p(3×2). Increasing the annealing temperature to 830 K in ultra-high-vacuum (UHV) led to a fully p(3×2) reconstructed surface. Continued UHV annealing above 800 K caused (1×1) islands to appear on the p(3×2) surface and the film color to darken. Eventually, prolonged UHV annealing led to a (1×1)-terminated surface with straight steps oriented in [0 0 1] or [0 1 0] directions due to crystallographic shear planes. The randomly spaced steps on the (1×1) surface indicated variations in the local stoichiometry in the film. An added row model proposed for the p(4×2) structure is also shown to be consistent with the p(3×2) structure. The formation of the p(4×2) structure from the p(2×2) structure was attributed to W⁵⁺ migration into the bulk to form the troughs between the added rows. Reduction of the p(4×2) structure caused the troughs to narrow rather than deepen, suggesting that W⁵⁺ or added row surface diffusion competes with migration of reduced W ions into the bulk when the p(3×2) structure forms. The STM images also show evidence that the (1×1) structure forms through coalescence of the added rows.     

Phase transitions in alloys of the Ni–Mo system

The structure of Ni–20 at.% Mo and Ni–25 at.% Mo alloys heat treated at different temperatures was studied by the method of transmission electron microscopy. X-ray photoelectron spectroscopy was used to detect the sign of the chemical interaction between Ni and Mo atoms at different temperatures. It is shown that at high temperatures the tendency toward phase separation takes place. The system of additional reflections at positions {1 ½ 0} on the electron diffraction patterns testifies that the precipitation of crystalline bcc Mo particles begins in the liquid solution. At 900 °C and below, the tendency toward ordering leads to the precipitation of the particles of the chemical compounds. A body-centered tetragonal phase Ni₄Mo (D1_a) is formed in the Ni–20 at.% Mo alloy. In the Ni–25 at.% Mo alloy, the formation of the Ni₃Mo (D0₂₂) chemical compound from the A1 solid solution has gone through the intervening stage of the Ni₄Mo (D1_a) and Ni₂Mo (Pt₂Mo) formation.     

Theoretical investigation of atomic structure and electronic properties of Ca/Si(110)-(2 × 1) reconstruction

We have presented first-principles total-energy calculations for the adsorption of Ca metals onto a Si(110) surface. The density functional method was employed within its local density approximation to study the atomic and electronic properties of the Ca/Si(110) structure. We considered the (1 × 1) and (2 × 1) structural models for Ca coverages of 0.5 monolayer (ML) and 0.25 ML, respectively. Our total-energy calculations indicate that the (1 × 1) phase is not expected to occur. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The Ca/Si(110)-(2 × 1) produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. One filled and two empty surface states were observed in the gap; these empty surface states originate from the uppermost Si dangling bond states and the Ca 4 s states. It is found that the Ca-Si bonds have an ionic nature and complete charge being transferred from Ca to the surface Si atoms. Finally, the key structural parameters of the equilibrium geometry are detailed and compared with the available results for metal-adsorbed Si(110) surface, Ca/Si(001), and Ca/Si(111) structures.