Dielectric temperature stability of Nb-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

In this study, the phase structure, microstructure and dielectric properties of Bi_0.5(Na_0.78K_0.22)_0.5(Ti_1-xNb_x)O₃ lead-free ceramics prepared by traditional solid phase sintering method were studied. The second phase pyrochlore bismuth titanate (Bi₂Ti₂O₇) was produced in the system after introduction of Nb⁵⁺. The dielectric constant of the sample (x = 0.03) sintered at 1130 °C at room temperature reached a maximum of 1841, and the dielectric loss was 0.045 minimum. It had been found that the K⁺ and Nb⁵⁺ co-doped Bi_0.5Na_0.5TiO₃ (BNT) lead-free ceramics exhibited outstanding dielectric-temperature stability within 100–400 °C with T_cc ≤±15%. Result of this research provides a valuable reference for application of BNT based capacitors in high temperature field.     

Enhanced energy-storage properties and dielectric temperature stability of (Bi0·5Na0.5)0.84Sr0·16Ti1-x(Y0·5Nb0.5)xO3 lead-free ceramics

A series of lead-free (Bi_0·5Na_0.5)_0.84Sr_0·16Ti_1-x(Y_0·5Nb_0.5)_xO₃ (abbreviated as BNST-100xYN) relaxor ferroelectric ceramics were prepared by solid state reaction sintering. The micro morphology, dielectric properties, and energy storage properties of the ceramics with increasing doping content were systematically studied, and their conductive mechanism was also studied. The perovskite structure was not significantly changed with the addition of (Y_0·5Nb_0.5)⁴⁺ complex ions, but it led to a certain amount of flake grains appear and element precipitation with increasing composition. And the larger dielectric breakdown strength (DBS) and lower remanent polarization (P_r) were attained with the recoverable energy storage density (W_rec) of ~1.0433 J/cm³ for x = 0.04 composition. In addition, it showed outstanding dielectric temperature stability and cycle stability. These results indicated that BNST-4YN ceramics are an excellent candidate for energy storage device and temperature-stable dielectric equipment.     

Enhanced optical transmittance and energy-storage performance in NaNbO3-modified Bi0.5Na0.5TiO3 ceramics

Dielectric ceramics with both excellent energy storage and optical transmittance have attracted much attention in recent years. However, the transparent Pb-free energy-storage ceramics were rare reported. In this work, we prepared transparent relaxor ferroelectric ceramics (1 − x)Bi_0.5Na_0.5TiO₃–xNaNbO₃ (BNT–xNN) by conventional solid-state reaction method. We find the NN-doping can enhance the polarization and breakdown strength of BNT by suppressing the grain growth and restrained the reduction of Ti⁴⁺ to Ti³⁺. As a result, a high recoverable energy-storage density of 5.14 J/cm³ and its energy efficiency of 79.65% are achieved in BNT–0.5NN ceramic at 286 kV/cm. Furthermore, NN-doping can promote the densification to improve the optical transmittance of BNT, rising from ∼26% (x = 0.2) to ∼32% (x = 0.5) in the visible light region. These characteristics demonstrate the potential application of BNT–xNN as transparent energy-storage dielectric ceramics.     

High energy storage performance of [(Bi0.5Na0.5)0.94Ba0.06]0.97La0.03Ti1-x(Al0.5Nb0.5)xO3 ceramics with enhanced dielectric breakdown strength

Novel lead-free [(Bi_0.5Na_0.5)_0.94Ba_0.06]_0.97La_0.03Ti_1-x(Al_0.5Nb_0.5)_xO₃ ceramics (BNBLT-xAN) were prepared by the conventional solid state sintering method. The dielectric, ferroelectric, ac impedance and energy-storage performance were systematically investigated. Temperature dependent permittivity curves showed that relaxation properties of sintered ceramics gradually diminished with the increase of AN. The introduction of AN gave rise to a slimmer polarization hysteresis loop (P-E) and an enhanced dielectric breakdown strength (DBS). Therefore, the optimum energy-storage performance were realized at x?=?0.05 with the energy-storage density (W_rec) of 1.72?J/cm³ and energy-storage efficiency (η) of 85.6% at 105?kV/cm, accompanied with the excellent temperature stability and fatigue performance. The results demonstrated that BNBLT-xAN system was a promising lead-free candidate for energy-storage applications.     

Enhanced energy storage in temperature stable Bi0.5Na0.5TiO3-modified BaTiO3-Bi(Zn2/3Nb1/3)O3 ceramics

Recently, BaTiO₃-BiMeO₃ ceramics have garnered focused research attention due to their outstanding performance, such as thermal stability, energy efficiency and rapid charge-discharge behavior, however, a lower recoverable energy storage density (W_rec) caused by a relatively low P_max (<30 μC/cm²) mainly hinders practical applications. Herein, the energy density and thermal stability are improved by adding a tertiary component, i.e., Bi_0.5Na_0.5TiO₃, into BaTiO₃-BiMeO₃, resulting in xBi_0.5Na_0.5TiO₃-modified 0.88BaTiO₃-0.12Bi(Zn_2/3Nb_1/3)O₃ ceramics, with x = 0, 0.1, 0.2, 0.3 and 0.4, with superior dielectric properties and eco-friendly impact. Incorporating Bi_0.5Na_0.5TiO₃ with a high saturation polarization and Curie temperature not only significantly enhances P_max of BaTiO₃-Bi(Zn_2/3Nb_1/3)O₃ but also improves Curie temperature of (1-x)[0.88BaTiO₃-0.12Bi(Zn_2/3Nb_1/3)O₃]-xBi_0.5Na_0.5TiO₃ system. Combined with complementary advantages, modified ceramics render a superior energy storage performance (ESP) with a high W_rec of 3.82 J/cm³, efficiency η of 94.4% and prominent temperature tolerance of 25–200 °C at x = 0.3. Moreover, this ceramic exhibit excellent pulse performance, realizing discharge energy storage density W_dis of 2.31 J/cm³ and t_0.9 of 244 ns. Overall, the proposed strategy effectively improved comprehensive properties of BaTiO₃-based ceramics, showing promise in next-generation pulse applications.     

Large electro-strain with excellent fatigue resistance of lead-free (Bi0.5Na0.5)0.94Ba0.06Ti1-x(Y0.5Nb0.5)xO3 perovskite ceramics

A series of lead-free (Bi_0.5Na_0.5)_0.94Ba_0.06Ti_1-x(Y_0.5Nb_0.5)_xO₃ (for 0 ≤ x ≤ 0.03) perovskite ceramics were fabricated using a solid-state reaction technique. The effects of (Y_0.5Nb_0.5)⁴⁺ ions doping on phase structure, piezoelectric properties, AC impedance, and fatigue resistance were systematically studied. Crystal structure as a function of the composition revealed a single perovskite lattice structure with dense micromorphology. The transition temperature of the non-ergodic and ergodic relaxor ferroelectric phase shifted to near ambient temperature with increasing composition, which was related to the destruction of the long-range ordered ferroelectric domains. Hence, the transformation of ferroelectric-to-relaxor phase was easier under applied electric field at room temperature. The ceramic for x = 0.01 composition attained a large unipolar strain of ~ 0.452% with a corresponding normalized strain (d₃₃*) of ~ 603 pm/V under applied 75 kV/cm field. Besides, the excellent fatigue resistance of the sample was obtained after 10⁵ switching cycles under 70 kV/cm. These phenomena demonstrated that (Bi_0.5Na_0.5)_0.94Ba_0.06Ti_1-x(Y_0.5Nb_0.5)_xO₃ ceramics might be suitable for a wide range of electronic equipment applications such as actuators and sensors.     

Giant electro-strain and enhanced energy storage performance of (Y0.5Ta0.5)4+ co-doped 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 lead-free ceramics

0.94(Bi_0.5Na_0.5)(Y_0.5Ta_0.5)_xTi_1-xO₃-0.06BaTiO₃ lead-free piezoelectric ceramics were prepared by a conventional solid-state reaction method to study their excellent electro-strain properties and energy storage characteristics systematically. All ceramics exhibited a dense surface morphology. The introduction of (Y_0.5Ta_0.5)⁴⁺ complex ions destroyed the long-range ferroelectric order, which reduced the T_F-R to the operating temperature, resulting in an easier field-induced transition between relaxor and ferroelectric phase. Therefore, for x = 0.01 component attained unipolar strain of 0.37% under 52 kV/cm, and the corresponding normalized strain d₃₃* was 708 pm/V. Besides, the destruction of the ferroelectric phase also induced a pinched hysteresis loop and the maximum storage density of 1.215 J/cm³ with the efficiency of 68.7% obtained at 98 kV/cm for BNYT30 ceramics. These all demonstrated that the doping of complex ions (Y_0.5Ta_0.5)⁴⁺ made the BNT-BT an outstanding candidate for actuators and energy storage devices.     

Tunable antiferroelectric ceramic polarization via regulating incommensurate phase and domain features

Due to the high demand for dielectric materials with high energy density, the energy storage performance of antiferroelectric ceramic capacitors has always gained much attention. Polarization intensity is a key factor that is closely related to the energy storage density. However, thus far, there has been a lack of research studies or successful methods to effectively modulate polarization intensity. The behavior of the polarization process is complex and contains domain nucleation, growth, and flip-flapping. Based on this finding, the introduction of Nb⁵⁺ at the B-site was designed to influence the three stages of antiferroelectric polarization by regulating the balance between the ferroelectric and antiferroelectric phases, and eventually realized regulation of the saturation polarization intensity in the (Pb_1-1.5xLa_x)(Zr_0.5Sn_0.43Ti_0.07)O₃ antiferroelectric ceramics. The saturation polarization intensity has increased from 25.56 to 42 μC/cm² with Nb⁵⁺ content increases from 0 to 4 mol% and the hysteresis was kept low, Pb_0.94La_0.04(Zr_0.65Sn_0.35)_0.975Nb_0.02O₃ is the optimal component with a high releasable energy density of 8.26 J/cm³ and an energy storage efficiency of 90.31%. This work provides an in-depth explanation of the microscopic mechanism of antiferroelectric ceramic polarization and presents a novel approach for the composition design of high-energy storage density antiferroelectric ceramics.     

Enhanced energy storage performance and temperature stability achieved by a synergic effect in Nd3+/Ga3+ co-doped (Na0.5Bi0.5)TiO3 -based ceramics

(1-x)(0.75(Na_0.5Bi_0.5)TiO₃-0.25SrTiO₃)-xNdGaO₃ ceramics (NBST-xNG, x = 0–0.06) were fabricated through a solid-state reaction method. High-valent Nd³⁺ ions enter the perovskite A-site to occupy Bi vacancies resulting from the volatilization of Bi, inhibiting the formation of oxygen vacancies and contributing to an enhanced breakdown electric field (E_b). Low-valent Ga³⁺ ions enter the B-site to substitute for Ti⁴⁺ ions, resulting in the formation of random electric fields (REFs) at the B-site due to co-occupying hetero-valence ions of Ga³⁺/Ti⁴⁺, which significantly reduces ferroelectric hysteresis. Therefore, a synergic effect of A- and B-sites co-doping was realized in NBST-xNG ceramics. Benefitting from this synergic effect, an enhanced recoverable energy storage density (W_rec) of 2.88 J/cm³ and an efficiency (η) of 83% are simultaneously obtained in NBST-0.04NG ceramics under a moderate electric field (E) of 200 kV/cm. Compared with most NBT-based ceramics, the values of (η vs W_rec/E²) for NBST-0.04NG ceramics show an obvious advantage, indicating excellent potential for application as an energy storage material. Moreover, W_rec and η of NBST-0.04NG ceramics exhibit excellent temperature stability from 30 °C to 200 °C due to the enhanced correlation strength of polar nanoregions (PNRs) and local structural stability. This work provides a potential strategy to improve the energy storage performance of NBT-based ceramics via the synergic effect of A- and B-site co-doping.     

Lead-free BaTiO3-Bi0.5Na0.5TiO3-Na0.73Bi0.09NbO3 relaxor ferroelectric ceramics for high energy storage

A series of (1-x)(0.65BaTiO₃-0.35Bi_0.5Na_0.5TiO₃)-xNa_0.73Bi_0.09NbO₃ ((1-x)BBNT-xNBN) (x = 0–0.14) ceramics were designed and fabricated using the conventional solid-state sintering method. The microstructure, dielectric property, relaxor behavior and energy storage property were systematically investigated. X-ray diffraction results reveal a pure perovskite structure and dielectric measurements exhibit a relaxor behavior for the (1-x)BBNT-xNBN ceramics. The slim polarization electric field (P-E) loops were observed in the samples with x ≥ 0.02 and the addition of Na_0.73Bi_0.09NbO₃ (NBN) could decrease the remnant polarization (P_r) of the (1-x)BBNT-xNBN ceramics obviously. The sample with x = 0.08 exhibits the highest energy storage density of 1.70 J/cm³ and the energy storage efficiency of 82% at 172 kV/cm owing to its submicron grain size and high relative density. These results show that the (1-x)BBNT-xNBN ceramics may be promising lead-free materials for high energy storage density capacitors.     

Thermally-stable large strain in Bi(Mn0.5Ti0.5)O3 modified 0.8Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3 ceramics

(1-x)[0.8Bi_0.5Na_0.5TiO₃-0.2Bi_0.5K_0.5TiO₃]-xBi(Mn_0.5Ti_0.5)O₃ (x = 0–0.06, BNKMT100x) lead-free ferroelectric ceramics were prepared via solid state reaction method. Bi(Mn_0.5Ti_0.5)O₃ induces a structure transition from rhombohedral-tetragonal morphotropic phases to pseudo-cubic phase. Moreover, the wide range of compositions within x = 0.03–0.055 exhibit large strain of 0.31%–0.41% and electrostrictive coefficient of 0.027–0.041 m⁴/C². Especially, at x = 0.04, the large strain and electrostrictive coefficient are nearly temperature-independent in the range of 25–100 °C. The impedance analysis shows the large strain and electrostrictive coefficient originate from polar nanoregions response due to the addition of Bi(Mn_0.5Ti_0.5)O₃.     

High energy storage density achieved in Bi3+-Li+ co-doped SrTi0.99Mn0.01O3 thin film via ionic pair doping-engineering

The demand for lead-free dielectric capacitors with rapid charge-discharge ability and high energy storage density is increasing owing to the rapid development of electronic equipment. Lead-free Sr_1-x(Bi_0.5Li_0.5)_xTi_0.99Mn_0.01O₃ (x = 0.02, 0.025, 0.03, 0.035) thin films grown on Pt/Ti/SiO₂/Si substrates were prepared by sol-gel method. A huge enhancement in polarization was found in Bi³⁺-Li⁺ co-doped SrTiO₃ thin films. The large lattice distortion and local broken-symmetry due to formation of Bi³⁺-Li⁺ ionic pairs are responsible for ferroelectricity and high polarization. The maximum polarization (42.1 μC/cm²) and largest energy storage density of 47.7 J/cm³ at 3307 kV/cm were both achieved in Sr_0.975(Bi_0.5Li_0.5)_0.025Ti_0.99Mn_0.01O₃ thin film. Moreover, an excellent temperature-dependent stability was also obtained in Sr_0.975(Bi_0.5Li_0.5)_0.025Ti_0.99Mn_0.01O₃ thin film from 30 to 110 °C.     

Enhanced energy storage properties of {Bi0.5[(Na0.8K0.2)1-zLiz]0.5}0.96Sr0.04(Ti1-x-yTaxNby)O3 lead-free ceramics

Energy storage properties of {Bi_0.5[(Na_0.8K_0.2)_1-zLi_z]_0.5}_0.96Sr_0.04(Ti_1-x-yTa_xNb_y)O₃ (BNKLSTTN-x/y/z) lead-free ceramics are investigated. It is found that Ta performs better than Nb in the case of their energy storage density values, and the addition of optimum Li contents can enhance the energy storage properties by enhancing the dielectric breakdown strength (DBS). Enhanced energy storage density of 1.60 J/cm³ under a low electric field of 90 kV/cm is achieved in BNKLSTTN-0.025/0/0.10 samples, and the fatigue-free properties are also observed. In addition, the BNKLSTTN-0.025/0/0.10 samples show the enhanced temperature dependence of energy storage density. These results indicate that the BNKLSTTN-x/y/z ceramics are one of the most promising lead-free materials for energy storage applications.     

Preparation,characterization, and giant dielectric permittivity of (Y3+ and Nb5+) co–doped TiO2 ceramics

The microstructure and giant dielectric properties of Y³⁺ and Nb⁵⁺ co–doped TiO₂ ceramics prepared via a chemical combustion method are investigated. A main rutile–TiO₂ phase and dense ceramic microstructure are obtained in (Y_0.5Nb_0.5)_xTi_1-xO₂ (x = 0.025 and 0.05) ceramics. Nb dopant ions are homogeneously dispersed in the microstructure, while a second phase of Y₂O₃ particles is detected. The existence of Y³⁺, Nb⁵⁺, Ti⁴⁺ and Ti³⁺ as well as oxygen vacancies is confirmed by X–ray photoelectron spectroscopy and X–ray absorption near edge structure analysis. The sintered ceramics exhibit very high dielectric permittivity values of 10⁴–10⁵ in the frequency range of 40–10⁶ Hz. A low loss tangent value of ≈0.08 is obtained at 40 Hz. (Y_0.5Nb_0.5)_xTi_1-xO₂ ceramics can exhibit non–Ohmic behavior. Using impedance spectroscopy analysis, the giant dielectric properties of (Y_0.5Nb_0.5)_xTi_1-xO₂ ceramics are confirmed to be primarily caused by interfacial polarization.     

Giant permittivity in (Nb0.5La0.5)xTi1-xO2 ceramics prepared by slip casting in a strong magnetic field

A series of textured (Nb_0.5La_0.5)_xTi_1-xO₂ (x = 0, 0.0025, 0.005, 0.01) ceramics were sintered in a nitrogen environment after magnetic slip casting (12 T). Component x ranges from 0.0025 to 0.01 while the degree of orientation increases from 0.49 to 0.88. (Nb_0.5La_0.5)_0.01Ti_0.99O₂ ceramics in the parallel magnetic field's plane have a high permittivity ɛ_r ≈ 1.6 × 10⁴ and the ultralow dielectric loss tanδ ≈ 0.0038 at 10⁴ Hz. The temperature coefficient value of η ≤ ± 7.1% between 218–473 K, fulfilling the X9R requirements. The giant permittivity properties of textured ceramics are mainly derived from internal barrier layer capacitor impacts, electron hopping, and electron-pinned defect-dipoles polarization. The microstructure evolution of sintered ceramics was modified by texturing in a magnetic field, leading to higher activation energies of dielectric relaxations and resistance of grain boundaries and grains. This excellent performance is expected to show great potential in electronic devices' miniaturization and high-density energy storage.     

Ternary doping of Na+, Bi3+ and La3+ to improve piezoelectric constant and electrical resistivity simultaneously in calcium bismuth niobate ceramics

High Curie-temperature layer-structured calcium bismuth niobate (CaBi₂Nb₂O₉) piezoelectric ceramics are promising for important application in high-temperature vibration sensors. However, such application is currently limited due to not only poor high-temperature piezoelectric constant (d₃₃), which is attributable to spontaneous polarization along a-b plane and high coercive fields, but also inferior high-temperature electrical resistivity, which results from volatilization of Bi₂O₃ during the sintering process that increases defect concentration of oxygen vacancies. Herein, we report a Na⁺, Bi³⁺ and La³⁺ ternary-doping-strategy to obtain Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics, which exhibited higher piezoelectric constant and larger electrical resistivity as accompanied by a better thermal stability at high-temperatures. The piezoelectric constant was enhanced from 8.8 pC/N in pristine CaBi₂Nb₂O₉ to 13.4 pC/N in Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics, which is ascribed to the presence of pseudo-tetragonal structural distortion after La³⁺ doping. In addition, the electrical resistivity at 600 °C was increased by more than one-order of magnitude from 3.7 × 10⁴ Ω cm in pristine CaBi₂Nb₂O₉ to 1.4 × 10⁶ Ω cm in Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics. Such significant improvement in electrical resistivity results from the reduction in oxygen vacancies due to ternary doping of Na⁺, Bi³⁺ and La³⁺ and stronger binding interaction between La³⁺ dopants and O^2? in (Bi₂O₂)²⁺ layers in Ca_0.8(Na_0.5La_0.3Bi_0.2)_0.2Bi₂Nb₂O₉ ceramics. This work demonstrates an important way of employing chemical doping to improve piezoelectric constant and electrical resistivity simultaneously at high-temperatures to tune structural distortion in bismuth-layered structural CaBi₂Nb₂O₉ ceramics.     

Significantly enhanced energy storage density in sodium bismuth titanate-based ferroelectrics under low electric fields

Bi_0.5Na_0.5TiO₃ (BNT)-based ferroelectrics have received more and more attention due to their environment-friendliness and large maximum polarization. Herein, the enhanced energy-storage properties of BNT-based ceramics were successfully prepared by introducing multi-ions (La³⁺, K⁺, Al³⁺, Nb⁵⁺, Zr⁴⁺) to improve the breakdown strength and simultaneously suppress the remnant polarization. An excellent discharge energy-storage density (W_d) of 3.24 J cm⁻³ and a high energy-storage efficiency (η) of 82 % under 200 kV cm^-1 have been recorded for Bi_0.44La_0.06(Na_0.82K_0.18)_0.5Ti_0.90(Al_0.5Nb_0.5)_0.08Zr_0.02O₃ ceramic. Meanwhile, the outstanding thermal stability with W_d of 1.84–1.96 J·cm⁻³ were also achieved in 25−125 °C at 140 kV cm^-1. More importantly, piezoresponse force microscopy reveals that the threshold voltage for inducing long range order enhances while the stability of polar nanoregions (PNRs) on the nanoscale decreased with the increase of La doping amount, leading to more linear polarization behavior and higher energy-storage properties. These results promote the practical applications of BNT-based ferroelectrics in advanced pulsed power systems.     

High energy storage properties of lead-free Mn-doped (1-x)AgNbO3-xBi0.5Na0.5TiO3 antiferroelectric ceramics

In this work, 0.2 wt.% Mn-doped (1-x)AgNbO₃-xBi_0.5Na_0.5TiO₃ (x = 0.00–0.04) ceramics were synthesized via solid state reaction method in flowing oxygen. The evolution of microstructure, phase transition and energy storage properties were investigated to evaluate the potential as high energy storage capacitors. Relaxor ferroelectric Bi_0.5Na_0.5TiO₃ was introduced to stabilize the antiferroelectric state through modulating the M₁-M₂ phase transition. Enhanced energy storage performance was achieved for the 3 mol% Bi_0.5Na_0.5TiO₃ doped AgNbO₃ ceramic with high recoverable energy density of 3.4 J/cm³ and energy efficiency of 62% under an applied field of 220 kV/cm. The improved energy storage performance can be attributed to the stabilized antiferroelectricity and decreased electrical hysteresis ΔE. In addition, the ceramics also displayed excellent thermal stability with low energy density variation (<6%) over a wide temperature range of 20−80 °C. These results indicate that Mn-doped (1-x)AgNbO₃-xBi_0.5Na_0.5TiO₃ ceramics are highly efficient lead-free antiferroelectric materials for potential application in high energy storage capacitors.     

Antiferroelectricity in tantalum doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06(Ti_1−xTa_x)O₃ (x=0.00–0.04) lead-free polycrystalline ceramics were synthesized using the solid state reaction route, and their crystal structures and electrical properties were systematically studied. With the introduction of Ta substitution, the relaxor antiferroelectric phase with tetragonal P4bm symmetry is stabilized. The representative double polarization hysteresis loops and sprout shaped strain curves for antiferroelectric ceramics are observed at higher Ta contents with x=0.01–0.02 at room temperature. x=0.01 shows the largest strain of 3.81‰ under 60 kV/cm, indicating a good candidate for actuator applications. The polarization and strain hysteresis loops are also evaluated to verify the temperature-induced normal ferroelectric phase to relaxor antiferroelectric phase transition at temperature up to 120 °C. The energy storage density and efficiency at various temperatures are calculated and analyzed in the compositions of x=0.00–0.02. The results indicate that the energy storage density becomes more temperature independent with the increase of Ta concentration, which are promising for applications in high-temperature capacitors.     

Large electrostrain and high energy-storage of (1-x)[0.94(Bi0.5Na0.5) TiO3-0.06BaTiO3]-xBa(Sn0.70Nb0.24)O3 lead-free ceramics

(1-x)[0.94(Bi_0.5Na_0.5)TiO₃-0.06BaTiO₃]-xBa(Sn_0.70Nb_0.24)O₃ (abbreviated as BNTBT-100xBSN) lead-free ceramics were fabricated with a relative density greater than 96 %, and the structure as well as performance were tested. BNTBT-100xBSN ceramics are pseudo-cubic perovskite structure, with dense surface morphology. Doping BSN can effectively reduce the dielectric loss of ceramics and increase the relaxation properties to a certain extent. The randomly distributed ferroelectric phase was replaced by polar nano regions, thereby improving the electro-strain and energy storage performance of the system. The largest electro-strain and the corresponding normalized strain (d₃₃*) reach ~ 0.43 % and 633 pm/V respectively in the BNTBT-1BSN ceramic. The largest effective energy storage density reaching ~ 1.28 J/cm³ was tested in BNTBT-2BSN. BNTBT-100xBSN ceramics provide a feasible idea for the systematic research of lead-free ferroelectrics and improvements in electro-strain and energy storage applications.