The thermal conductivity of propane

This paper presents thermal conductivity measurements of propane over the temperature range of 192–320 K, at pressures to 70 MPa, and densities to 15 mol · L^–1, using a transient line-source instrument. The precision and reproducibility of the instrument are within ±0.5%. The measurements are estimated to be accurate to ±1.5%. A correlation of the present data, together with other available data in the range 110–580 K up to 70 MPa, including the anomalous critical region, is presented. This correlation of the over 800 data points is estimated to be accurate within ±7.5%.Nomenclature a _n, b_ij, b_n, c_n Parameters of regression model - C Euler's constant (=1.781) - P Pressure, MPa (kPa) - P _cr Critical pressure, MPa - Q ₁ Heat flux per unit length, W · m^–1 - t time, s - T Temperature, K - T _cr Critical temperature, K - T ₀ Equilibrium temperature, K - T _re Reference temperature, K - T _r Reduced temperature = T/T _cr - T _TP Triple-point temperature, K Greek symbols Thermal diffusivity, m² · s^–1 - T _i Temperature corrections, K - T Temperature difference, K - T _w Temperature rise of wire between time t ₁ and time t ₂, K - T ^* Reduced temperature difference (T–T _cr)/T_cr - _corr Thermal conductivity value from correlation, W · m^–1 · K^–1 - _cr Thermal conductivity anomaly, W · m^–1 · K^–1 - _e Excess thermal conductivity, W · m^–1 · K^–1 - ^* Reduced density difference - Thermal conductivity, W^–1 · m^–1 · K^–1, mW · m^–1 · K^–1 - _bg Background thermal conductivity, W · m^–1 · K^–1 - ₀ Zero-density thermal conductivity, W · m^–1 · K^–1 - Density, mol · L^–1 - _cr Critical density, mol · L^–1 - _re Reference density, mol · L^–1 - _r Reduced density Paper presented at the Tenth Symposium on Thermophysical Properties, June 20–23, 1988, Gaithersburg, Maryland, U.S.A.     

Photoinduced Change of Thermophysical Properties of Chalcogenide As<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript>S<Subscript><Emphasis Type="Bold">3</Emphasis></Subscript>Thin Films

The reversible photoinduced change exhibited by amorphous chalcogenide glasses has been extensively studied recently, partly as an interesting subject for fundamental research in the field of disordered solids and partly due to potential applications in optoelectronics such as photoresists, optical memories, optoelectronic circuits, etc. The illumination of many amorphous chalcogenides changes their internal and/or surface structure while preserving their amorphous state. In this study, amorphous arsenic trisulfide (As₂S₃) thin film samples whose thickness is 5 µm were prepared on silicon wafers by thermal evaporation, and their thermal diffusivity and thermal conductivity were measured by photoacoustic spectroscopy and a 3? method, respectively. These measurements were repeated after illumination by an Ar⁺ laser beam whose photon energy E _g is consistent with the energy band gap of As₂S₃. The results show that the thermal diffusivity and thermal conductivity increase by about 50% and 14–15%, respectively, by the photoinduced darkening, and this can be explained by the rearrangement of atoms and thermal expansion of the film.     

X-ray diffraction study of the Cu<Subscript>2</Subscript>Se-In<Subscript>2</Subscript>Se<Subscript>3</Subscript>-Cr<Subscript>2</Subscript>Se<Subscript>3</Subscript> system near CuInCr<Subscript>2</Subscript>Se<Subscript>5</Subscript>

The structure of three compounds in the Cu₂Se-In₂Se₃-Cr₂Se₃ system near CuInCr₂Se₅ is determined by single-crystal x-ray diffraction: CuInCr₄Se₈ (I), Cu₂In₂Se₄ (II), and Cu_0.5In_0.5Se (III). I has a cubic (spinel type) structure: a = 10.606(4) Å, Z = 4, sp. gr. F43m. II has a pseudotetragonal (sphalerite type) structure: a = 5.774(2) Å, c = 11.617(6) Å. The structure of II was solved in a reduced unit cell with a = 5.774(2) Å, b = 5.774(2) Å, c = 7.095(6) Å, = 113.95(5)°, = 113.95(5)°, = 90.00(4)°, Z = 1, sp. gr. P1. III has a triclinic cell (disordered structure of II): a = 4.088(1) Å, b = 4.091(2) Å, c = 4.101(1) Å, = 60.05(1)°, = 60.08(1)°, = 89.98(4)°, Z = 1, sp. gr. P1. The Cu and In atoms in I sit in inequivalent tetrahedral sites, and the Cr atoms reside in octahedral interstices of the close packing of Se atoms. The bond lengths are In–Se = 2.538(6), Cr(1)–Se(1) = 2.514(7), Cr(1)–Se(2) = 2.576(8), and Cu–Se = 2.437(5) Å. In II, all of the atoms sit in tetrahedral sites; the mean bond lengths are In–Se = 2.578(6) and Cu–Se = 2.44(1) Å. In III, the Cu and In atoms are fully disordered in the same tetrahedral site; the mean Cu(In)–Se bond length is 2.508(6) Å.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1435–1439.Original Russian Text Copyright © 2004 by Antsyshkina, Sadikov, Koneshova, Sergienko.     

Characterization of thermally evaporated AgGaTe<Subscript>2</Subscript> films grown on KCl substrates

Silver gallium telluride (AgGaTe₂) films have been grown by thermal evaporation technique onto the KCl substrates kept at different temperatures (483–563 K) in a vacuum of 1.3 × 10^–3Pa. The experimental conditions were optimised to obtain better crystallinity of the films. The films so prepared have been studied for their structural, optical and electrical properties. Observations reveal that the crystallinity of the films increases with increase in substrate temperature. Average crystallite size of 0.2–0.5 m has been observed in case of films deposited at 563 K. Analysis of optical spectra of the films in the range 300–1100 nm show an allowed direct transition near the fundamental absorption edge (E_g1) in addition to a transition originating from crystal field split levels (E_g2). It has been observed that the carrier concentration and Hall mobility of films increases with increase in substrate temperature.     

Effects of oriented growth on properties of Ag/Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by Sol-Gel method with rapid thermal annealing techniques

Ag/Bi₄Ti₃O₁₂/p-Si heterostructures were fabricated by Sol-Gel method with rapid thermal annealing techniques. The effects of oriented growth on ferroelectric characteristics and electrical properties of Bi₄Ti₃O₁₂ film were investigated. Bi₄Ti₃O₁₂ films on bare p-Si exhibit preferred c-axis-orientation with the increase of annealing temperature, which would impair the ferroelectric properties but help to drop down the leakage current density of Bi₄Ti₃O₁₂ films. The Polarization-Voltage curves and the electrical characteristics curves show that the Bi₄Ti₃O₁₂ films annealed at 650 C for 5 min have good ferroelectric and electrical properties with a remanent polarization of 8.3 C/cm² and a leakage current density of < 5 × 10^–9 A/cm² at 6 V, which demonstrate that the Ag/Bi₄Ti₃O₁₂/p-Si heterostructure by Sol-Gel method with rapid thermal annealing techniques is a promising configuration for MFS-FETs applications.     

Effects of oxygen and carbon impurities on the optical transmission of As<Subscript>2</Subscript>Se<Subscript>3</Subscript> glass

The IR spectra of As₂Se₃ glass samples containing known amounts of oxygen (4 × 10^-3 to 7.7 × 10^-2 wt %) or carbon (5.8 × 10^-3 wt %) are measured, and the parameters of impurity-related absorption bands and extinction coefficients are determined. The effects of oxygen, carbon, sulfur, and hydrogen on the transmission of As₂Se₃ glass are analyzed. At an oxygen content on the order of 10^-5 wt %, this impurity causes optical losses in the range 900–1100 cm^-1 comparable to the intrinsic losses. The permissible carbon content of As₂Se₃ glass is 10^-6 to 10^-5 wt %. Carbon inclusions 0.07 µm in diameter cause optical losses comparable to the intrinsic losses in the spectral window of As₂Se₃ glass when present in a concentration of 10⁴ cm^-3.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 369–376.Original Russian Text Copyright © 2005 by Shiryaev, Smetanin, Ovchinnikov, Churbanov, Kryukova, Plotnichenko.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Synthesis of magnetic nanocomposite MgO/MgFe<Subscript>2</Subscript>O<Subscript>4</Subscript> from Mg-Fe layered double hydroxides precursors

The present letter reported the synthesis of MgO-containing magnetic nanocomposites by calcinations of tailored hydrotalcite-like layered double hydroxides (LDHs) of the type [Mg_{1 – x – y}Fe²⁺_yFe^{3 +}_x(OH)₂]^{x +}(A)_x/2·mH₂O (y 0; A = CO₃^{2 –} or SO₄^{2 –}) precursors at 900°C for 2 h. The results indicate that calcination of LDHs gives rise to the formation of magnetic nanocomposites of MgO and MgFe₂O₄ spinel ferrite, where MgO formed could disperse and separate MgFe₂O₄ particles, and MgO itself was also dispersed or embedded uniformly in the MgFe₂O₄ spinel matrix. Furthermore, initial studies on the bactericidal properties with staphylococcus aureus show that these as-synthesized nanometer-sized materials have significant bactericidal effect, which increases with the increasing volume fraction of MgO.     

Photoluminescence and Electrical Conductivity of As<Subscript>2</Subscript>S<Subscript>3</Subscript>〈Au〉 and As<Subscript>2</Subscript>S<Subscript>5</Subscript>〈Au〉 Glasses

The 77-K photoluminescence spectra of (As₂S₃)_{100 − x} Au_x and (As₂S₅)_{100 −x} Au_x (0 ≤ x ≤ 0.04) semiconducting glasses are measured for the first time. At low doping levels, the spectra of the (As₂S₅)_{100 − x} Au_x glasses are split into two components, one of which arises from the Au dopant. The temperature-dependent conductivity of the glasses shows two breaks at low Au concentrations and anomalous behavior in the range 300–360 K. Qualitative analysis of the conductivity data suggests that most of the impurity atoms have saturated valence bonds and form solid solutions with host atoms, changing the band gap of the material. A small fraction of the impurity atoms, those having unsaturated valence bonds, produce an electrically active level responsible for impurity conduction.__________Translated from Neorganicheskie Materialy, Vol. 41, No. 7, 2005, pp. 876–880.Original Russian Text Copyright © 2005 by Babaev, Kamilov, Sultanov, Askhabov, Terukov.     

Structural and optical properties of AgIn<Subscript>5</Subscript>S<Subscript>8</Subscript> films grown by pulsed laser deposition

Thin AgIn₅S₈ films are grown on glass substrates by pulsed laser deposition using bulk crystals as targets, and their structure, chemical composition, surface morphology, and optical properties (transmission and reflection spectra in the range 0.5–2.5 µm) are investigated. The transmission and reflection data are used to evaluate the absorption coefficient of the films and the energies of direct and indirect interband transitions. The results obtained for laser-deposited AgIn₅S₈ films agree well with those for bulk crystals.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1418–1422.Original Russian Text Copyright © 2004 by Bodnar, Gremenok     

A Novel Method for Determination of the Thermal Diffusivity of Thin Films Using a Modulated CO<Subscript>2</Subscript> Laser

The thermal diffusivity of thin metal films has been measured by combining a fast infrared radiation thermometer with a mercury cadmium telluride (MCT) detector and a CO₂ laser modulated at a radio frequency up to 2 MHz. The laser output beam modulated by an acousto-optic modulator (AOM) is directed to the front surface of the blackened copper thin film (10m thick, 9.5 mm in diameter). The thermal radiation from the back surface of the sample is detected. From the observed phase delay in the detected signal of 0.68 radian to the input laser beam, the thermal diffusivity is determined to be 1.11 × 10^-4m²·s^-1, which agrees well with the value of 0.99 × 10^-4m²·s^-1 calculated from literature results. The method is generally applicable for measurements of thermal properties of nano/micro materials.Paper presented at the Fifteenth Symposium on Thermophysical Properties, June 22--27, 2003, Boulder, Colorado, U.S.A.     

Thermal conductivity of air in the range 312 to 373 K and 0.1 to 24 MPa

We have used the transient hot-wire technique to make absolute measurements of the thermal conductivity of dry, CO₂-free air in the temperature range from 312 to 373 K and at pressures of up to 24 MPa. The precision of the data is typically ±0.1%, and the overall absolute uncertainty is thought to be less than 0.5%. The data may be expressed, within their uncertainty, by polynomials of second degree in the density. The values at zero-density agree with other reported data to within their combined uncertainties. The excess thermal conductivity as a function of density is found to be independent of the temperature in the experimental range. The excess values at the higher densities are lower than those reported in earlier work.Nomenclature Thermal conductivity, mW · m^–1 · K^–1 - Density, kg · m^–3 - C _p Specific heat capacity at constant pressure, J · kg^–1 · K^–1 - T Absolute temperature, K - q Heat input per unit wire length, W · m^–1 - t Time, s - K(=/C _p) Thermal diffusivity, m² · s^–1 - a Wire radius, m - Euler's constant (=0.5772 ) - p _c Critical pressure, MPa - T _c Critical temperature, K - _c Critical density, kg · m^–3 - R Gas constant (=8.314 J · mol^–1 · K^–1) - V _c Critical volume, m³ · mol^–1 - Z _c(=p _c V _c/RT _c) Critical compressibility factor     

Structural and electrical characterization of AgInS<Subscript>2</Subscript> thin films grown by single-source thermal evaporation method

Structural and electrical properties of AgInS₂ (AIS) thin films grown by single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successfully grown by annealing above 400∘C in air. The grain size of the AIS crystals was above 2.5 μm from the surface photograph. Furthermore, the AIS grain sizes became large with increasing the annealing temperatures. All the samples indicated n-type conduction by the Van der Pauw technique. The carrier concentrations and the resistivities of the AIS films at room temperature were in the range of 10¹⁹–10²² cm⁻³ and 10⁻¹–10⁻³ Ωcm, respectively. Therefore the mobilities increased from 0.6 to 6.0 cm²/Vs with increasing the grain sizes.     

Disproportionation of Pu(V) in K<Subscript>10</Subscript>P<Subscript>2</Subscript>W<Subscript>17</Subscript>O<Subscript>61</Subscript> solutions

In solutions of unsaturated heteropolytungstate K₁₀P₂W₁₇O₆₁, Pu(V) disproportionates in a wide pH range; it is a first-order reaction with respect to Pu(V), and its rate only slightly changes in the pH range from 0.7 to 4.0. The activation energy E _a of Pu(V) disproportionation was determined as 78.6±2.0 and 64.2±3 kJ mol^?1 at pH 2.0±0.1 and 4.0±0.2, respectively. The thermodynamic parameters of activation ΔH ^≠ and ΔS ^≠ were evaluated. Published data on disproportionation of Np(V) and Am(V) in K₁₀P₂W₁₇O₆₁ solutions were analyzed.     

Electrical and photoelectric properties of electrodeposited <Emphasis Type="Italic">n</Emphasis>-Si/<Emphasis Type="Italic">n</Emphasis>-Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>S heterojunctions

n-Si/n-Cd_{1 - x} Zn_xS heterojunctions are produced by electrodepositing Cd_{1 - x} Zn_xS (0 x 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V _OC = 0.5 V and I _SC = 3.8 mA/cm² under illumination of 1500 lx at 300 K.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 276–280.Original Russian Text Copyright © 2005 by Mamedov, Gasanov, Amirova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Optical and photoelectric properties of Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>As<Subscript>2</Subscript> single crystals

The optical absorption, photoconductivity, and short-circuit photocurrent spectra of structurally perfect Cd_{1 - x} Zn_xAs₂ (x = 0.03, 0.05, 0.06) single crystals are studied for the first time near the intrinsic edge in the range 80–300 K. The results demonstrate that the intrinsic edge in the solid solutions is due to indirect transitions involving the formation of excitons for both the E c and E c polarizations. The indirect gaps _g ⁱ of the solid solutions are determined. In the range 80–300 K, the data for x = 0–0.06 and both polarizations are well fitted by _g ⁱ (x) = _g ⁱ (0) + 0.0866x + 2.35x ². The introduction of 6 mol % ZnAs₂ into CdAs₂ increases its _g ⁱ by 14 meV.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 268–272.Original Russian Text Copyright © 2005 by Morozova, Marenkin, Mikhailov, Koshelev.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Preparation and characterization of new dielectric ceramics Ba<Subscript>5</Subscript>LnTi<Subscript>2</Subscript>Nb<Subscript>3</Subscript>O<Subscript>18</Subscript> (Ln = La,Nd)

Two new A₆B₅O₁₈ type cation-deficient perovskites Ba₅LnTi₂Nb₃O₁₈ (Ln = La, Nd) were prepared by the conventional solid-state reaction route. The phase and structure of the ceramics were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). Both compounds crystallize in the trigonal system. Ba₅LaTi₂Nb₃O₁₈ has a dielectric constant of 56.6, a high quality factors (Q_u × f > 16,700 at 4.3331 GHz), and a relatively large temperature coefficient of resonant frequency (_f) + 142 ppm°C^–1 at room temperature; Ba₅NdTi₂Nb₃O₁₈ has a higher dielectric constant of 47.3 with high quality factors Q_u × f > 15,000 at 4.6830 GHz, and _f + 128 ppm°C^–1.     

Phase transitions and high-temperature crystal chemistry of polymorphous modifications of Cs<Subscript>2</Subscript>(UO<Subscript>2</Subscript>)<Subscript>2</Subscript>(MoO<Subscript>4</Subscript>)

Phase transitions and thermal deformations of - and -Cs₂(UO₂)₂(MoO₄)₃ were studied by high-temperature X-ray diffraction analysis. In heating of -Cs₂(UO₂)₂(MoO₄)₃ to 625 ± 25°C, the reconstructive phase transition proceeds. -Cs₂(UO₂)₂(MoO₄)₃ is stable up to 700 ±25°C. The thermal expansion of both phases is sharply anisotropic: ₁₁ = 10 × 10^–6, ₂₂ = 33 × 10^–6, ₃₃ = 10 × 10^–6, _V = 53 × 10^–6 deg^–1 for -Cs(UO₂)₂(MoO₄)₃ and ₁₁ = 13 × 10^–6, ₃₃ = 3 × 10^–6, _V = 31 × 10^–6 deg^–1 for -Cs₂ (UO₂)₂ (MoO₄)₃. The anisotropy of thermal expansion is explained by features of the crystal structure of the compounds.Translated from Radiokhimiya, Vol. 46, No. 5, 2004, pp. 405–407.Original Russian Text Copyright © 2004 by Nazarchuk, Krivovichev, Filatov.     

Synthesis and crystal structure of Cu<Subscript>2</Subscript>{(UO<Subscript>2</Subscript>)<Subscript>3</Subscript>[(S,Cr)O<Subscript>4</Subscript>]<Subscript>5</Subscript>}(H<Subscript>2</Subscript>O)<Subscript>17</Subscript>

Cu₂{(UO₂)₃[(S,Cr)O₄]₅}(H₂O)₁₇ crystals were prepared by evaporation of aqueous solutions. The crystal structure was solved by the direct method and refined to R ₁ = 0.064 (wR ₂ = 0.177) for 8120 reflections with ¦F _hkl¦ 4 ¦F _hkl¦. Rhombic system, space group Pbca, a = 18.0586(8), b = 19.9898(9), c = 20.5553(8) Å, V = 7420.2(6) ų. The structure is based on {(UO₂)₃[(S,Cr)O₄]₅}^4– anionic layers, formed by combination of UO₇ pentagonal bipyramids and TO₄ tetrahedra through common vertices. The { (UO₂)₃ [(S,Cr)O₄]₅}^4– layers are parallel to the (010) plane. The Cu²⁺ (H₂O)₆ octahedra and additional water molecules are located in the interplanar space and provide binding of the layers in the structure by hydrogen bonds. Based on the occupancy of tetrahedral positions, more accurate chemical formula of the compound should be written as Cu₂{(UO₂)₃[(S_0.804 Cr_0.196)O₄]₅} (H₂O)₁₇.Translated from Radiokhimiya, Vol. 46, No. 5, 2004, pp. 408–411.Original Russian Text Copyright © 2004 by Krivovichev, Burns.     

High-temperature phase transition of Tm<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript>

The high-temperature (>1600°C) order—disorder phase transition of Tm₂Ti₂O₇ is shown to be irreversible. The 740°C ionic conductivity of nanocrystalline Tm₂Ti₂O₇ ceramics synthesized at 1670°C is 2 × 10^-3 S/cm and remains unchanged upon heat treatment in air at 860°C for 240 h. The conductivity of the high-temperature (disordered pyrochlore) phase of Tm₂Ti₂O₇ is independent of grain size in the range 20–30 nm.Translated from Neorganicheskie Materialy, Vol. 40, No. 12, 2004, pp. 1495–1500.Original Russian Text Copyright © 2004 by Shlyakhtina, Knotko, Larina, Borichev, Shcherbakova.     

Preparation and magnetic properties of the CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films on Si substrate by sol-gel technique

A stable precursor for CoFe₂O₄ thin film was prepared by sol-gel technique from the aqueous solution of FeCl₃·6H₂O and CoCl₂·6H₂O. Sol was deposited on a naturally oxidized silicon-substrate by spinning technique (2000 rpm) and heat treated at different temperatures ranging from 700 to 1100 °C. Thickness of the films was controlled in the range of 400–500 nm and all the films were characterized by using XRD and SEM. The effects of temperature and the composition on the formation of CoFe₂O₄ thin film were also studied. Films obtained at relatively lower temperature showed multi-phases of α-Fe₂O₃, CoFe₂O₄ and CoO while the formation of CoFe₂O₄ phase increases with increasing temperature. Furthermore, the composition of the solution in mol% has great role on the formation of CoFe₂O₄ films and the film containing 50 mol% of Co²⁺ exhibited CoFe₂O₄ mono-phase. Surface morphology of the films was studied by scanning electron microscope (SEM). Magnetic properties of the films, studied by using vibrating sample magnetometer (VSM), showed relatively high saturation magnetization (8.04–22.21 kWb/m²) as well as high coercivity (44.59–63.30 kA/m). Saturation magnetization also increases with increasing heat treatment temperature.