大功率速调管的技术现状和最新进展

大功率速调管是一种基于速度调制原理将电子注能量转换成微波能量的微波真空电子器件,它具有高功率、高效率、高增益和高稳定性等优点,是微波真空电子器件中脉冲功率和平均功率最高的器件。速调管自20世纪30年代发明以来,在粒子加速器、雷达和通信等微波电子系统,以及真空电子技术进步的推动下,已发展成功多种类型大功率速调管,其频率覆盖整个微波,并扩展到毫米波和太赫兹波段,最大脉冲功率达200MW,最大平均(连续波)功率达MW级。近年来,在高能粒子加速器、宽带雷达系统、毫米波和太赫兹波电子系统的推动下,大功率速调管取得了令人瞩目的进步,本文比较系统地介绍了大功率速调管的技术现状和在提高功率、提高效率、提高工作频率、展宽带宽等方面取得的最新进展。     

High-frequency solid-state electronic devices

Starting with exploratory work in the 1930s and development work in the 1940s a variety of two-terminal and three-terminal solid-state device structures have been proposed, fabricated, and developed. This work parallels the development effort on vacuum electronic devices, and the two technologies share many applications. The solid-state and vacuum electronic devices work in tandem to enable numerous commercial and military systems. Solid-state device development is closely linked to semiconductor materials growth and processing technology, and advances such as the introduction of heterojunction growth technology, permit complex multiple layer device structures to be fabricated and optimized for maximized device performance. This work has been very successful and a variety of high-performance diodes and transistors are now available for use from UHF into the millimeter-wave spectrum, approaching terahertz frequencies. The development, operating principles, and state-of-the-art of various diode and transistor structures are reviewed.     

Trends of power semiconductor wafer level packaging

A review of recent advances in power wafer level electronic packaging is presented based on the development of power device integration. The paper covers in more detail how advances in both semiconductor content and power advanced wafer level package design and materials have co-enabled significant advances in power device capability during recent years. Extrapolating the same trends in representative areas for the remainder of the decade serves to highlight where further improvement in materials and techniques can drive continued enhancements in usability, efficiency, reliability and overall cost of power semiconductor solutions. Along with next generation wafer level power packaging development, the role of modeling is a key to assure successful package design. An overview of the power package modeling is presented. Challenges of wafer level power semiconductor packaging and modeling in both next generation design and assembly processes are presented and discussed.     

真空微电子学的研究和进展􀀂

真空微电子学是迅速发展的一门新学科，近年来国内外的研究已取得了一系列的成果。本文着重介绍了近两年真空微电子学在微尖性能提高、发射材料、阴极结构以及场致发射应用(主要是场发射显示器)等方面的最新进展。真空微电子学在场发射平面显示器件方面的研究已进入实用阶段，相信近几年在这方面的应用将会获得突破性的进展。     

真空微电子器件及其研究进展

由于真空微电子器件具有十分诱人的应用前景,近几年引起了人们的极大兴趣,成为电子器件发展的一个重要分支和前沿。本文叙述真空微电子器件的特点,原理、应用和最新研究成果。     

真空微电子三极管几何参数的设计考虑

真空微电子三极管是近年来兴起与发展的真空微电子学中的一类重要器件。本文从真空微三极管的工作特性出发,分析了这类器件中所需考虑的几何参数和工作特性的关系,并给出了一些理论和实验公式,为今后的设计提供一些参考。     

Vacuum electronics at the dawn of the twenty-first century

In this introduction to the Special Issue on vacuum electronics, the history, operating principles, and recent technological trends of vacuum electronic devices are reviewed. The development of microwave power tubes is described and improvements in these devices over the past quarter of a century are highlighted. These improvements have been substantial and have been driven by modern high-power applications and by advances in materials and computational science. The second part of this paper describes the advent of a new class of vacuum electronics generator as involving relativistic electron beams and interaction with fast waves (e.g., gyrotrons, free-electron lasers). These new types of generators are opening the electromagnetic spectrum beyond the microwave region (i.e., millimeter-wave, infrared, ultraviolet, and even X-ray) for applications of high-power, coherent generators of electromagnetic radiation     

EBL opening up the nano-world

Tremendous advances in lithography have spearheaded the shrinkage of device dimensions, playing a crucial role in the evolution of microelectronics. Although resist processing and etching are extremely important, advances in submicron structures are likely to be governed more by lithography than anything else. Electron beam lithography (EBL) is the best developed and most versatile high-resolution pattern-generation technique now available. This article discusses some recent applications of EBL in fabricating features in the nanometre scale, with a special emphasis on the fabrication of structures for applications in the exciting field of photonics and smart micro-optics.     

The state-of-the-art of GaAs and InP power devices and amplifiers

Significant investments and R&D efforts over the past two decades have established GaAs and InP electronic device technologies from substrate manufacturing to MMIC amplifier design and testing. Today, GaAs and InP HBTs and HFETs, as far as gain, efficiency, and power are concerned, dominate the whole spectrum from S- to W-band and beyond. In this paper we discuss recent advances in device technologies and survey the state of the art performance of GaAs and InP HFETs and HBTs     

Evolution of the acousto-optic wavelength routing switch

Through the efforts of many research groups and consortia over the last several years, the acousto-optic tunable filter has evolved into a device capable of high-performance wavelength-selective optical switching and wavelength routing in dense WDM systems. The distinguishing feature of the AO switch is its ability to sustain many independent coexisting passbands, thus allowing in a simple integrated-optic device, the parallel processing capability of much more complex designs. The AOTF has also found a role in active gain equalization of optically amplified networks. In this paper, we review the design of both hybrid and fully integrated AO switches. The theory of operation is reviewed and recent advances in passband engineering are described which have made low-crosstalk, wavelength misalignment-tolerant switches to be possible. Advanced issues such as mechanisms of interchannel crosstalk and its reduction are also discussed. Both device and system issues are covered     

半导体光电薄膜的分析和检测

半导体光电薄膜的制备,是半导体光电器件最重要和最基本的工艺过程。半导体光电薄膜的分析和检测是器件开发中必须首先要解决的重要问题之一。文章介绍了半导体光电薄膜的分析和检测以及分析技术和仪器设备的发展现状。     

Monolithic optoelectronic integration: A new component technology for lightwave communications

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integrated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAs or InP-based material systems with application at wavelength of0.82-0.87 mum and1.3-1.55 mum, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.     

Advances in modeling and simulation of vacuum electronic devices

Recent advances in the modeling and simulation of vacuum electronic devices are reviewed. Design of these devices makes use of a variety of physical models and numerical code types. Progress in the development of these models and codes is outlined and illustrated with specific examples. The state of the art in device simulation is evolving to the point such that devices can be designed on the computer, thereby eliminating many trial and error fabrication and test steps. The role of numerical simulation in the design places can be expected to grow further in the future     

TWTA versus SSPA: a comparison of on-orbit reliability data

There has been long-standing debate regarding the comparative reliability of solid-state power amplifiers (SSPAs) versus traveling wave tube amplifiers (TWTAs) for the satellite downlink. High-voltage, thermionic, life-limited emitters operating in a high vacuum enclosure (i.e., a vacuum electronic device) contribute to the TWTA risks and reliability questions. Conventional wisdom espouses the SSPA as an inherently more reliable, solid-state device requiring only low voltages to amplify, with failure resulting in only graceful degradation. However, many trade studies on comparing SSPAs and TWTAs rely on transistor device life test data on the ground for SSPAs due to the lack of statistically significant data on orbit. It is expected that current, on-orbit statistics in the industry would shed relevant light on the debate.     

固态功率放大器的优越性及其在卫星通信地球站中的成功应用

本文对微波固态功率放大器的最新进展及其相对与真空管放大器的优越性作了较详细的描述 ,介绍了固态功放在某数字电视上行站中的成功应用 ,笔者认为固态功放将在卫星通信地球站中逐渐代替行波管、速调管放大器。     

Monolithic optoelectronic integration: A new component technology for lightwave communications

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAS or InP-based material systems with application at wavelength of 0.82-0.87 µm and 1.3-1.55µm, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.     

Components for optical communications systems: A review

Current trends in research and development of components for optical communication are reviewed. Emphasis is placed on active components for fiber-optic systems which have undergone recent major advances. Basic properties of optical fibers and recent technological improvements in splices, connectors, and source/detector-fiber couplers are presented first. This background information serves as a basis for describing recent developments in optical sources (e.g., device reliability, LED's and laser diodes) and photodetectors. Developments in both the 0.8-0.9-µm and 1.0-1.7-µm wavelength regions are covered. Also surveyed are results of research in areas of potential interest for optical communications: novel fiber-optic components, integrated optics (sources and modulators/switches), novel device fabrication methods, and integration of optical components.     

Solution-Processed Organic Light-Emitting Diodes for Lighting

In this paper, the vapor-deposited and solution-processed organic light-emitting diode (OLED) technology development paradigms are described and then compared with respect to their prospects for enabling general lighting applications. Two key development needs are improved device efficiency and lower cost fabrication methods. Progress in these areas for solution-processed OLEDs is illustrated by describing recent methods for attaining high efficiency blue emission and introducing novel low cost process methods for device fabrication which enable high performance devices without the need for any vacuum processing steps     

空间用元器件热真空试验评价方法研究

空间用元器件热真空试验是空间环境模拟试验中非常重要的一项试验,文章通过对空间用元器件热真空环境应力的分析,给出了不同轨道的温度范围以及不同真空度下空间用元器件的物理效应;对空间用元器件热真空试验评价方法进行了研究和探讨,在参照组件、分系统、整星热真空试验方法的基础上,提出了器件级热真空试验程序。介绍了已开展的DC/DC混合集成电路和双向收发器单片集成电路的热真空试验情况和试验结果。试验结果表明,通过热真空试验,可以对空间用元器件热真空环境下的性能和可靠性进行试验评价,为航天用户单位合理选用空间用元器件提供科学依据。