Tribological approach to study polishing of road surface under traffic

Abstract

The polishing phenomenon of road pavements under the vehicle traffic constitutes the main mechanism inherent to the loss of skid resistance over time. A better understanding of this phenomenon would allow an improvement of road safety. This study comprises a review of laboratory test and a model simulating the polishing of road surfaces. The laboratory test uses a polishing machine so called 'Wehner–Schulze' which can reproduce the evolution of the road texture from specimens taken directly from road or made in laboratory. The model is based on contact mechanics considerations and considers that the local polishing rate is controlled by the pressure distribution between the car tyre and the road surface. The model evaluates the pressure distribution by taking into account the surface roughness, the applied load and the mechanical properties of the bodies in contact. From the pressure distribution and a proposed wear law, the local roughness evolution of the surface pavement can be readily evaluated. The removal material is proportional to the contact pressure and to the aggregate properties used in roads mix design. The results show that the predicted road profile evolution is consistent with those given by experiments.     

Modelling of delamination of ultra low-k material during chemical mechanical polishing

Two sets of experiments are performed to examine the delamination mechanism of ultra low-k material during chemical mechanical polishing (CMP): (i) a macro-scale polishing test using a metallographic polisher and (ii) a micro-scale scratch test on a micro-tribometer. Delamination has been observed at higher pressures in both sets of experiments and the relationship between delamination rate and pressure has been established. Contact mechanics models are proposed to correlate results from the two sets of experiments, combining a Weibull model of failure with a statistical asperity contact model. Results confirm the usefulness of the combined testing procedure in predicting safe polishing pressures during CMP.     

MOLECULAR APPROACH TO MATERIAL DETACHMENT MECHANISM DURING CHEMICAL MECHANICAL PLANARIZATION

Mechanistic numerical analysis and molecular dynamics (MD) simulation are employed to understand the material detachment mechanism associated with chemical mechanical polishing. We investigate the mechanics of scratch intersection mechanism to obtain a characteristic length scale and compare the theoretical predictions with previous experimental observations on ductile copper discs at the micro-scale. First, an analytical model is developed based on mechanics of materials approach. The analytical model includes the effects of strain hardening during material removal as well as the geometry of indenter tip. In the next step, molecular simulations of the scratch intersection are performed at the atomistic scale. The embedded atom method (EAM) is utilized as the force field for workpiece material and a simplified tool-workpiece interaction is assumed to simulate material removal through scratch intersection mechanism. Both models are utilized to predict a characteristic length of material detachment related to material removal during scratch intersection. The predictions from two approaches are compared with experimental observations in order to draw correlations between experiment and simulation. The insights obtained from this work may assist in understanding the mechanism for chemical mechanical planarization (CMP), and even be applied to other different machining and polishing events.     

MOLECULAR APPROACH TO MATERIAL DETACHMENT MECHANISM DURING CHEMICAL MECHANICAL PLANARIZATION

Mechanistic numerical analysis and molecular dynamics (MD) simulation are employed to understand the material detachment mechanism associated with chemical mechanical polishing. We investigate the mechanics of scratch intersection mechanism to obtain a characteristic length scale and compare the theoretical predictions with previous experimental observations on ductile copper discs at the micro-scale. First, an analytical model is developed based on mechanics of materials approach. The analytical model includes the effects of strain hardening during material removal as well as the geometry of indenter tip. In the next step, molecular simulations of the scratch intersection are performed at the atomistic scale. The embedded atom method (EAM) is utilized as the force field for workpiece material and a simplified tool-workpiece interaction is assumed to simulate material removal through scratch intersection mechanism. Both models are utilized to predict a characteristic length of material detachment related to material removal during scratch intersection. The predictions from two approaches are compared with experimental observations in order to draw correlations between experiment and simulation. The insights obtained from this work may assist in understanding the mechanism for chemical mechanical planarization (CMP), and even be applied to other different machining and polishing events.     

A statistical model for material removal prediction in polishing

This paper develops analytically a statistical model for predicting the material removal in mechanical polishing of material surfaces (MS). The model was based on the statistical theory and the abrasive–MS contact mechanisms. The pad-MS and pad-abrasive-MS interactions in polishing were characterised by contact mechanics. Two types of active abrasive particles in the polishing system were considered, i.e., Type I – the particles that can slide and rotate between the pad and MS, and Type II – those embedded in the pad without a rigid body motion. Accordingly, the material removal is considered to be the sum of the contributions from the two types of abrasive interactions. It was found that the mechanical properties and microstructure of the polishing pad and polishing conditions have a significant effect on the material removal rate, such as the porosity and elastic modulus of the pad, polishing pressure, volume concentration of abrasives, particle size, pad asperity radius and pad roughness. It was also found that different types of active particles contribute quite differently to the material removal. When the mean particle radius is small, the material removal is mainly due to the Type II particles, but when the mean particle radius becomes large, the Type I particles remove more materials. The model predictions are well aligned with experimental results available in the literature and can be used for the material removal prediction in chemo-mechanical polishing if a proper treatment of the chemical effect is introduced.     

A micro-contact and wear model for chemical–mechanical polishing of silicon wafers

A micro-contact and wear model for chemical–mechanical polishing (CMP) of silicon wafers is presented in this paper. The model is developed on the basis of elastic–plastic micro-contact mechanics and abrasive wear theory. The synergetic effects of mechanical and chemical actions are formulated into the model. A close-form equation of material removal rate from the wafer surface is derived relating to the material, geometric, chemical and operating parameters in a CMP process. The model is evaluated by comparing the theoretical removal rates with those experimentally determined. Good agreement is obtained for both chemically active and inactive polishing processes. The model reveals some insights into the micro-contact and wear mechanisms of the CMP process. It suggests that the removal rate is sensitive to the particle concentration in the slurry, more sensitive to the applied load and operating speed and most sensitive to the surface hardness and slurry particle size. The model may be used to study the effects of different materials, geometry, slurry chemistry and operating conditions on CMP processes.     

Abrasive removal depth for polishing a sapphire wafer by a cross-patterned polishing pad with different abrasive particle sizes

The paper establishes a new theoretical model for abrasive removal depth for polishing a sapphire wafer using chemical mechanical polishing with a polishing pad that has a cross pattern. The theoretical model uses binary image pixel division to calculate the pixel polishing times. An abrasive contact model for single-pixel multiple abrasive particles, to estimate the contact force between a single abrasive particle and the wafer, is then established. When the contact force is calculated, it is possible to calculate the abrasive depth of a single abrasive particle on the surface of the sapphire wafer. Using this theoretical model, carring a numerical simulation with a slurry of the same concentration, but with different abrasive particle diameters, determines the removal volume and average abrasive removal depth at each pixel position and the surface condition of the wafer. The simulation result is also compared with experimental data, in order to verify that the new model is feasible.     

Effect of processing parameters of laser on microstructure and properties of cladding 42CrMo steel

Hard-inert materials such as diamond, silicon carbide, gallium nitride, and sapphire are difficult to obtain from the smooth and damage-free surfaces efficiently required by semiconductor field. Therefore, this study proposed a chemical kinetics model to evaluate the material removal rate of diamond in chemical mechanical polishing process and to investigate the material removal mechanism by examining the surface information with optical microscopy, surface profilometry, and atomic force microscopy as well as X-ray photoelectron spectroscopy. The theoretical and experimental results show that chemical and mechanical synergic effect may promote the diamond oxidation reaction in chemical kinetics. The material removal rate is acceptable when the mechanical activation coefficient is smaller than 0.48. The 2.5 μm B₄C abrasives, the polishing temperature of 50 °C, and the polishing pressure of 266.7 MPa are optimal parameters for diamond polishing with potassium ferrate slurry. It provides the highest material removal rate of 0.055 mg/h, the best surface finish (about Ra 0.5 nm) and surface quality (no surface scratches or pits). It then discusses how mechanical stress may promote the chemical oxidation of oxidant and diamond by forming “C-O,” “C=O,” and “O=C-OH” on diamond surface. The study concludes that chemical kinetics mechanism is effective for the investigation of the synergic effect in chemical mechanical polishing hard-inert materials.     

An analytical model of the material removal rate between elastic and elastic-plastic deformation for a polishing process

This paper develops an analytical model for the material removal rate during specimen polishing. The model is based on the micro-contact elastic mechanics, micro-contact elastic-plastic mechanics and abrasive wear theory. The micro-contact elastic mechanics between the pad-specimen surfaces used the Greenwood and Williamson elastic model. The micro-contact elastic-plastic mechanics between specimen and particle, as well as the micro-contact elastic mechanics between particle and pad, are also analyzed. The cross-sectional area of the worn groove in the specimen is considered as trapezoidal area. A close-form solution of material removal rate from the specimen surface is the function of average diameter of slurry particles, pressure, the specimen/pad sliding velocity, Equivalent Young’s modulus, RMS roughness of the pad, and volume concentration of the slurry particle.     

Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale

No conclusive results have been proposed for the influence of the abrasive particle size on the material removal during the chemical mechanical polishing (CMP). In this paper, a mathematical model as a function of abrasive size and surface oxidizer concentration is presented for CMP. The model is proposed on the basis of the molecular-scale removal theory, probability statistics and micro contact mechanics. The influence in relation to the binding energy of the reacted molecules to the substrate is incorporated into the analysis so as to clarify the disputes on the variable experimental trends on particle size. The predicted results show that the removal rate increases sub-linearly with the abrasive particle size and oxidizer concentration. The model predictions are presented in graphical form and show good agreement with the published experimental data. Furthermore, variations of material removal rate with pressure, pad/wafer relative velocity, and wafer surface hardness, as well as pad characteristics are addressed. Results and analysis may lead further understanding of the microscopic material removal mechanism from molecular-scale perspective.     

固液两相磨粒流研抛工艺优化及质量影响

为研究磨粒流对异形腔孔内壁表面以及微小孔的研抛去毛刺等的作用效果,探讨了研抛过程中磨粒流各工艺参数与加工质量间的作用关系。以共轨管这种非直线管为研究对象,对磨粒流抛光共轨管过程进行数值模拟研究,探索各工艺参数对磨粒流研抛的影响。数值模拟结果表明:控制碳化硅体积分数可以改变磨粒流研抛过程中的粘温特性,从而可以控制磨粒流的研抛质量。然后采用正交方法设计实验方案,实验过程中,采集抛光过程中温度和粘度的变化数据,分析磨粒流研抛中粘温特性对磨粒流研抛质量的影响。试验与数值模拟结果表明,在磨粒流研抛共轨管过程中SiC的体积分数比出口压力的极差秩大,磨粒流研抛确实可有效改善工件表面质量。而且本文还进一步得出在本试验条件下,磨粒流研抛共轨管的最佳工艺参数:出口压力为5 MPa,SiC体积分数为0.25%,SiC目数为80,同时获得了表面粗糙度与体积分数的回归方程,可用于指导磨粒流实际研抛生产工作。     

机器人恒压球形公自转磨头抛光技术研究

采用工业机器人进行大口径光学元件的研抛过程中,机器人自身定位误差会导致研抛压力产生波动,进而影响去除函数稳定性,为此提出了一种机器人恒压球形公自转磨头抛光方法,并对其结构、工作原理、机器人定位特性以及研抛压力输出特性开展了研究。首先,基于Preston理论构建了材料去除模型,对去除函数形状进行了分析,对所设计抛光磨头的机械结构与工作原理进行了介绍。然后,对机器人定位误差以及磨头输出力响应性与稳定性进行了测量,验证了所提方法能够较好地适应机器人研抛压力波动而做出的力响应控制。最后,进行了定点抛光以及粗、精磨抛加工实验。实验结果表明：利用所提方法去除函数的稳定性强,通过10个周期的粗、精抛加工,面形收敛率分别为9095%、7261%,可获得较高的加工精度与面形质量。     

NC polishing of aspheric surfaces under control of constant pressure using a magnetorheological torque servo

In this paper, a method of maintaining a constant polishing pressure is proposed for a NC polishing system by controlling the polishing force during the polishing process. First, the NC polishing system is developed to resolve the force–position coupling problem encountered in common polishing processes. It mainly consists of a force control subsystem based on a magnetorheological torque servo to provide a controllable torque to polishing tool to generate the polishing force and a position control subsystem based on a general CNC lathe to control the position of the polishing tool. Second, a constant polishing pressure model is established by controlling the polishing force according to the variation of the curvature of the aspheric surfaces, and the polishing parameters for model are planned. Then, the control model of the polishing system is proposed, and a PID controller is designed for torque tracking with the actual torque feedback from a torque sensor. Finally, polishing experiments are conducted with constant force and constant pressure, respectively. Experimental results show that the surface roughness is greatly improved, the aspheric surfaces can be polished more uniformly with constant pressure than with constant force, and the PID controller can meet the requirements for the polishing force control.     

一种基于非晶层粘性流动的机械化学抛光模型

通过分析单个微纳米磨粒滑动接触的分子动力学模拟的研究结果，提出了在典型的机械化学抛光（CMP）过程中芯片表面材料的去除应为表面非晶层物质粘性流动所致的新观点。基于这种机理，应用微观接触力学和磨粒粒度分布理论建立了一种新的表征CMP过程材料去除速率的数学模型。模型中引入了一个表征单个磨粒去除芯片表面非晶层能力的比例系数k，k综合反映了磨粒的机械作用、抛光液对芯片表面的化学作用和芯片的材料特性。通过实验验证发现该模型的理论预测值与实验测定值十分吻合。     

磁流变变间隙动压平坦化加工力特性研究

磁流变变间隙动压平坦化加工利用工件的轴向低频振动使磁流变液产生挤压强化效应,可以有效提高加工效果并使光电晶片快速获得纳米级表面粗糙度。通过旋转式测力仪试验研究不同变间隙参数对磁流变变间隙动压平坦化加工过程中抛光正压力的影响规律,结果表明,在工件轴向低频振动作用下,抛光正压力形成脉冲正值和负值周期性的动态变化过程;将工件轴向低频振动过程分解为下压过程与拉升过程,下压速度和拉升速度对动态抛光力有不同的响应特性;随着最小加工间隙的减小抛光正压力会急剧增大;设置最小加工间隙停留时间观察抛光正压力变化,可以发现在工件最小加工间隙停留期间抛光力从峰值逐渐衰减并趋于平稳;挤压振动幅值对抛光正压力影响较小。建立了磁流变变间隙动压平坦化加工材料去除模型,弄清了在动态压力作用下,磨料更新及其附加运动机制,研究了磁流变变间隙动压平坦化加工过程中磨料颗粒对工件表面柔性划擦和微量去除的作用机理,为磁流变变间隙动压平坦化加工的工艺优化提供了理论依据。     

斜面60°光纤透镜抛光接触状态的分析

为了掌握光纤透镜抛光接触状态,依据接触力学理论,建立了60o斜面光纤透镜抛光时的接触力学模型;应用ANSYS接触分析技术和MATLAB数据图视功能,对光纤透镜抛光过程中光纤加工端与抛光垫的接触状态进行了分析。结果表明：补偿角α、光纤夹持伸出长度l和抛光垫弹性模量E2不仅影响到光纤透镜抛光接触区域的接触形式,也同时影响接触压强的分布状态;外加位移载荷z对接触形式影响不大,但对接触压强分布影响较大。     

Experimental investigation and analytical modelling of the tool influence function of the ultra-precision numerical control polishing method based on the water dissolution principle for KDP crystals

A single crystal of potassium dihydrogen phosphate (KH₂PO₄, KDP), which possesses unique excellent non-linear electro-optical properties, is currently the only material suitable for electro-optic switches and high power laser-frequency conversion applications in laser-induced inertial confinement fusion. However, KDP crystals are difficult to produce because of their inherent softness, brittleness, and water-solubility, as well as their strong anisotropy and temperature sensitivity. Obtaining high-quality near-lossless KDP elements is an issue that should be solved urgently. In this study, an ultra-precision numerical control polishing method based on the water dissolution principle was introduced to achieve a controllable material removal. A small polishing tool was used to process a large KDP surface, and an accurate tool influence functions is required for deterministic fabrication of KDP surface. In order to quantify the influence of critical parameters (e.g., polishing speed, polishing pressure, water content, and directions of revolution and rotation) on material removal rate distribution, a tool influence function model was established based on the Preston equation. The model was then modified based on experiments, and its accuracy was verified. This modified model lays the foundation for ultra-precision water dissolution polishing of large KDP crystals. A very smoothed surface with high surface accuracy (peak-to-valley value below 0.4 λ) and low surface roughness (Ra 1.598 nm) could indeed be obtained by using the model. This research is also applicable to the polishing of other water-soluble materials.     

机器人超声振动弹性研磨加工的力学模型

建立了机器人超声振动弹性研磨加工的力学模型,通过研磨试验研究了摩擦系数与各研磨参数的关系,并据此得到简化的研磨压力计算模型。     

机器人超声振动弹性研磨加工的力学模型

建立了机器人超声振动弹性研磨加工的力学模型,通过研磨试验研究了摩擦系数与各研磨参数的关系,并据此得到简化的研磨压力计算模型。     

Theoretical and experimental investigation of surface generation in swing precess bonnet polishing of complex three-dimensional structured surfaces

Three-dimensional structured surfaces (3D-structured surfaces) possessing specially designed functional textures are widely used in the development of advanced products. This paper presents a novel swing precess bonnet polishing (SPBP) method for generating complex 3D-structured surfaces which is accomplished by the combination of specific polishing tool orientation and tool path. The SPBP method is a sub-aperture finishing process in which the polishing spindle is swung around the normal direction of the target surface within the scope of swing angle while moving around the center of the bonnet. This is quite different from the ‘single precess’ and ‘continuous precessing’ polishing regime, in which the precess angle is constant. The technological merits of the SPBP were realized through a series of polishing experiments. The results show that the generation of complex 3D-structured surfaces is affected by many factors which include point spacing, track spacing, swing speed, swing angle, head speed, tool pressure, tool radius, feed rate, polishing depth, polishing cloth, polishing strategies, polishing slurry, etc. To better understand and determine the surface generation of complex 3D-structured surfaces by the SPBP method, a multi-scale material removal model and hence a surface generation model have been built for characterizing the tool influence function and predicting the 3D-structured surface generation in SPBP based on the study of contact mechanics, kinematics theory, abrasive wear mechanism, and the convolution of the tool influence function and dwell time map along the swing precess polishing tool path. The predicted results agree reasonably well with the experimental results.