Energy Scales in the High-Tc Superconductor YBa2Cu3O6+x

The optical conductivity sum rule is used to examine the evolution of the spectral weight N() in both the normal and superconducting states of optimally and underdoped YBa₂Cu₃O_6+x along the a axis. Differences in N() above and below T _c allow the strength of the superconducting condensate _s to be determined. In the optimally-doped material, _s is fully formed at energies comparable to the full superconducting gap maximum (0.1 eV), while in the underdoped material the energy scale for convergence is considerably higher (0.6 eV). This difference is discussed in terms of normal-state properties.     

Hc2 of MgCNi3 Determined from the Specific Heat and Resistivity Measurements

H _c2 of MgCNi₃ has been determined from the specific heat C and resistivity measurements in the same sample. The results from are nearly identical with those determined from the anomaly in C. Furthermore, utilizing the relation (H) H and the value of d/dH, the obtained value of H _c2 is the same as that by the WHH model, if the spin paramagnetic effect and the spin–orbit interaction are taken into account. The results of this comparison have strong implications on the order parameter of MgCNi₃.     

Low-Field microwave measurements of YBa2Cu3O7?x near the superconducting transition temperature

Novel microwave absorption and dispersion measurements have been performed on well-characterized single-crystal platelets of the high-T _c superconductor YBa₂Cu₃O_7–x . The results are explained in terms of the rapid variation of the penetration depth near and belowT _c . Since EPR measurements are very sensitive to small changes in absorption and dispersion, this technique should be very useful in the understanding of the transition temperature region in both new and old superconducting materials.     

Frequency and temperature dependence of the millimeter wave conductivity of epitaxial YBa2Cu3O7 films

A millimeter wave spectrometer for frequencies between 100 and 350 GHz consisting of continuously tunable backward wave oscillators as sources and a quasioptical interferometer in the Mach-Zehnder configuration was used to measure the transmittivity in phase and amplitude of YBa₂Cu₃O₇ thin films on NdGaO₃ substrates. From the measured spectra we derived the real and imaginary part of the dynamic conductivity= ₁+i ₂ in the superconducting state as a function of temperature. The ₁(T) and ₂(T) values at 300 GHz were compared to corresponding values at 19 GHz determined by surface impedance measurements of the same films using a shielded dielectric resonator. Our observed frequency dependence of both ₁(T) and ₂(T) is consistent with a strong reduction of the quasiparticle scattering rate ^–1(T) with decreasing temperature belowT _c .     

Transistor Doping Experiments on Superconducting CaCuO2 and C60 Interpreted on a Bond Ordering Model

The curve shape of T _c vs. holes injected by fields (transistor doping) of CaCuO₂ and C₆₀ are interpreted on a charge or bond ordering [BO] model. For CaCuO₂ both the magnitude of optimal T _c (89 K vs. a calculated 83 K) and the linear portions around a sharp T _c peak at h 0.17 = 1/6 are in accord with a universal algorithm for cuprates, in which T _c scales linearly with radical bond density to an optimal BO. These linear regions extrapolate to h = 0 and 1/3 respectively. Small trends to electronic freezing are observed at h = 1/8. A second linear region extends from h 1/12 to 1/16 with 4 times the slope of the first linear region, indicating a second mode of BO filling. A surprisingly similar behavior is observed for transistor doped C₆₀ type materials with characteristic sequence of BO dictated hole concentrations for T _c onset, rise, a linear region extrapolating to T _c = 0 at h = 0, indications for electronic freezing, a sharp peak and linear decrease thereafter. This suggests that a common phenomenology obtains for all high T _c materials, representing generally an ordering phenomenon of doped covalent radical bonds.     

Anisotropy in ac losses near the irreversibility field of Bi2Sr2CaCu2O8

The ac susceptibility under a biased dc field near the irreversibility field (H _irr) of a Bi₂Sr₂CaCu₂O₈ single crystal has been measured. The frequency dependence, the ac-power dependence, and the nearly lossless character of the vs.H _dc curve forHa-axis have been roughly explained from a reversible (elastic) fluxoid motion, while those forH c-axis have been explained from a thermally assisted flux-flow (TAFF) model. The obtained parameters are discussed in relation to anisotropic flux-pinning mechanisms in the layered structure of this compound.     

Surface resistance of large-area Tl2Ba2CaCu2O8 thin films at microwave and millimeter wave frequencies measured by three noncavity techniques

The surface resistanceR _s of Tl₂Ba₂CaCu₂O₈ films fabricated on LaAlO₃ wafers up to 3 inches (7.6 cm) in diameter through a post-deposition anneal process was measured over the frequency range 5.55–94.1 GHz by the following techniques: 5.55 and 27.5 GHz high-temperature superconductor (HTS)-sapphire resonators, 10 GHz parallel plate resonator, and 94.1 GHz scanning confocal resonator.R _s was found to exhibit a quadratic dependence on frequencyf at 77 K:R _s f ^2.0±0.1. The highest-quality films yieldR _s =145±15 at 10 GHz and 77 K. Scanning confocal resonator mapping ofR _s across a 2-inch (5.1 cm) diameter wafer yielded a base value forR _s of 16±1 m at 77 K and 94.1 GHz (equivalent to 180±10 at 10 GHz) and good uniformity inR _s across the wafer. HTS-sapphire resonator measurements ofR _s for fifteen 1.2 cm square parts cut from a 3-inch diameter wafer yieldedR _s values scaled to 10 GHz of 196±10 at 80 K. Similar values were measured for Tl₂Ba₂CaCu₂O₈ films prepared on both sides of a 2-inch diameter wafer.Rs values at 10 GHz and 80 K of 147–214 were maintained over the course of 40 independent and successive deposition runs and corresponding anneals under nominally identical film fabrication conditions. Surface resistance at 5.55 GHz remained below 80 for maximum rf magnetic fields up to 85 Oe at 4.2 K and 7 Oe at 80 K, respectively. Results are compared with predictions of the two-fluid model. The relative advantages and disadvantages of the different techniques for measuring surface resistance are discussed.     

Chemical Control of Underdoped and Overdoped States in Y(Ba2 ? ySry)Cu3O6 + δ

The chemical control of underdoped and overdoped states in the Y(Ba_{2 – y} Sr _y )Cu₃O_{6 +} (0.1 and 0.9) compounds has been observed by high-resolution O K-edge X-ray-absorption near-edge-structure spectra. The chemical substitution of Sr for Ba in the fully-oxygenated Y(Ba_2–y Sr _y )Cu₃O_{6 +} (0.9) compounds gives rise to high hole concentrations within both the CuO₂ planes and the out-of-plane sites, leading to the overdoped state and the decrease in the superconducting transition temperature from 92 K for y=0 to 84 K for y=0.8. In contrast, an increase in the Sr content in the oxygen-deficient Y(Ba_{2 – y} Sr _y )Cu₃O_{6 +} (0.1) compounds did not indicate superconductivity. The oxygen-deficient compounds exhibit the underdoped state due to the low hole concentration.     

Observation of X-band SQUID signals in a High-Tc superconducting film device

A microwave superconducting magnetometer is described in which a microstrip resonator is coupled to a two-hole high-T _c thin-film SQUID device. Both the microstrip circuit and the thin-film SQUID were fabricated by photolithography techniques. The YBCO thin film was deposited on single-crystal substrate of yttria-stabilized zirconia [YSZ(100)] by an ion beam sputtering technique producing a superconducting transition measured at a critical temperature ofT _c =92 K to within T 3 K. Non linear oscillatory behavior was observed in the microstrip resonator when inductively coupled to the SQUID. This nonlinear behavior yielded a microwave device in which the reflected microwave power varied with applied DC magnetic flux.     

Analysis of electronic structure and charge density of the high-temperature superconductor YBa2Cu3O7

Self-consistent linearized augmented plane wave (LAPW) method calculations of the band structure, density of states, Fermi surface, Coulomb potential, charge density, core-level shifts, and electron-phonon interaction are presented for Y₁Ba₂Cu₃O₇. The calculated Sommerfield parameter is 4.35 mJ(mole Cu)^–1 K^–2, roughly about a factor of 2 smaller than experimentally deduced values of the enhanced value=(1 + )₀, suggesting that the Fermi surface mass enhancement is of the order of unity. The crystal charge density is best represented by overlapping spherical ionic densities when the Cu and O ions are assigned charges of +1.62 and –1.69, respectively, corresponding to about 0.3 holes per oxygen atom. Core-level energies for the inequivalent atoms differ by as much as 0.45 eV for Cu and 0.7 eV for O, amounts which may be detectable by core-level spectroscopies. These results provide important information on the character and magnitude of ionic contributions to bonding in these materials. Within the rigid muffin-tin approximation, calculated McMillan-Hopfield parameters yield estimates for the electron-phonon strength that appear to be too small to account for the observedT _c. We point out an unusual band of oxygen-derived chain states below, but within 0.1 eV of, the Fermi level.     

Thermophysical properties data on molten semiconductors

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.Nomenclature Density - C _p Specific heat - Kinematic viscosity - Dynamic viscosity= - Thermal diffusivity - Thermal conductivity=C_p - Volumetric thermal expansion coefficient - Surface tension - d/dT Temperature coefficient of surface tension - g Gravitational acceleration - T Temperature - T Temperature difference - L Characteristic dimension     

Normal-State Optical Response Functions of MgB2 Superconductor

The reflectivity of superconducting MgB₂ (T _c = 39 K) has been measured on a randomly oriented thin film at room temperature over a wide-range of frequencies, 20 < 100000 cm^–1. The conductivity shows highly metallic behavior but cannot be explained with a simple Drude model alone. The electronic contribution is analyzed by a generalized Drude model. The scattering rate 1/() and the mass renormalization ratio m*()/m = 1 + () exhibit clear frequency dependence. The electron–phonon coupling strength is estimated to be 1.5 ± 0.5 while the plasma frequency _p is 2.4 eV.     

Microwave properties of highly oriented YBa2Cu3O7-δ superconducting thin films

We have performed millimeter-wave frequency (94 GHz) measurements on high-quality YBa₂Cu₃O₇- superconducting films on yttrium-stabilized (100) ZrO₂ and MgO substrates. The 0.2m thin films fabricated by magnetron sputteringin situ with the YBa₂Cu₃O₇- powders as target exhibit superconducting transition temperatures up to 88 K. The critical current density of 6×10⁵ A/cm² at 77 K and the X-ray diffraction spectrum as well as scanning electron microscope photographs indicate these thin films are fullyc-axis oriented, extremely high in density, and universally homogeneous. Millimeter-wave surface resistances have been measured on a hemisphere open resonator in the temperature range of 20 K toT _c and beyond. The surface resistance at 94 GHz and 77 K for these films is found to be about 30 m, nearly 1/4 that for copper, and a drop of two orders in the surface resistance within 4 K is observed, which indicates that these films are good materials for applications in the millimeter-wave range, especially for fabricating microwave devices. We observed such low surface resistance in these thin films due to the near absence of grain and phase boundaries coupled with a high degree of crystalline orientation.     

Flux creep and fishtail in melt-textured and single-crystalline YBa2Cu3O7

Time-dependent decay of the magnetic moment and magnetization measurements were used to study pinning and flux creep in two samples with and without aj(B) maximum in nonzero field (fishtail effect). From both measurements theE(j) relation was reconstructed forBc and the characteristic current exponent was obtained. At highj and lowB values are between 1 and 4; with increasingB passes a maximum and approaches negative values. At lowj is below 0.5 and not dependent onB orj. This behavior, which is qualitatively the same in both samples, is compared with proposed phase diagrams of the vortex lattice. Large values are correlated with the plateau of the normalized creep rateS 0.025; both observations indicate low relaxation and are found in that lowB region for whichj(B) has its minimum. This observation rejects a dominating influence of relaxation on the fishtail effect.     

Theab-plane optical conductivity of high-Tc superconductors

There is anisotropy in theab-plane optical properties of the high-temperature superconductors, both in the normal state and in the superconducting state. In both states, two components appear in the optical conductivity: a free carrier part and a midinfrared component. BelowT _c , the free carriers form the superconducting condensate. In YBa₂Cu₃O_7–, the anisotropy of the penetration depth shows that the chains contribute strongly to this superfluid. In Bi₂Sr₂CaCu₂O₈, where chains are absent, there is stillab plane anisotropy. BelowT _c a finite absorption parallelb remains at frequencies as small as 20 meV. This anisotropy could be due to anisotropy either of the superconducting gap or the midinfrared component.     

Substitution of Cu by Fe in the superconducting ceramic oxide EuBa2Cu3Oy: Structure, electrical conductivity, and microwave response

A series of EuBa₂(Cu_1–x Fe _x )₃O_y (0.0x0.15) ceramics were prepared and examined by thermogravimetric analysis, X-ray powder diffraction, electrical resistance measurements, and a magnetically modulated microwave absorption technique. The oxygen content (y=6.98±0.03), determined by thermogravimetric analysis in a reducing atmosphere, was independent of the iron concentration forx0.12. The introduction of iron into the EuBa₂Cu₃O _y lattice, via substitution into copper sites, effects a progressive decrease in the superconducting transition temperature with increasing iron concentration. Normal-state conductivity similarly progresses from a low resistivity and negative temperature coefficient behavior, to a semiconducting-like response at the high iron concentrations. X-ray powder diffraction measurements indicate that material containing 6% iron and above is tetragonal, yet it remains superconducting with up to at least 12% iron.     

Comparison of Superconductivity and Structure for Lanthanum Replacing for Barium and Copper in YBa2Cu3Od

X-ray diffraction studies and the resistivity measurements are used to characterize the structure and the superconductivity of the nominal composition of YBa₂Cu_{3 – x} La _x O _d (YBCLO) cuprates with x 0.30. There was a BaCuO₂ impurity phase detected with x 0.10. The structure of the main phase (123) has the orthorhombic form with Pmmm symmetry in the whole doping range. With increasing content of lanthanum, x, the lattice constants increase for x < 0.04, and decrease for x 0.04. Rietveld refinements for X-ray diffraction show that the dopant of lanthanum substitutes for copper in the lower doping level, and replaces for both barium and copper in the high doping level. The zero-resistance temperature T _c0 first increases with the increase of the content of lanthanum in YBCLO as x 0.04 and then decreases with x as x 0.04. We compared the results with those of La-doped YBa_{2 – z} La _z Cu₃O _y cuprates. The different relationship in superconductivity dependence of lanthanum content may result from the strains due to the different occupancy of lanthanum in the unit cell of YBa₂Cu₃O _d .     

d-Hole localization and the suppression of superconductivity in YBa2(Cu1-xZnx)3O7?y

The temperature and Zn concentration dependence of the electrical resistivity, specific heat, magnetic susceptibility, and electron paramagnetic resonance (EPR) spectra of YBa₂(Cu_1–x Zn _x )₃O_7–y withy0.1 has been measured forx0.16. In addition, the temperature and field dependence of the magnetization has been measured for 2<T<300K and 0<H<9.0T, along with the temperature and quasihydrostatic pressure dependence of the electrical resistivity for selected samples for 0<P<13 GPa. The substitution of Zn for Cu in YBa₂Cu₃O_7–y causes a rapid and nearly linear depression of the superconducting transition temperature,T _c , withT _c going to 0 K forx 0.10. YBa₂(Cu_1–x Zn _x )₃O_7–y retains the YBa₂Cu₃O_7-y orthorhombic structure forx0.16 for both the superconducting and nonsuperconducting samples. Initially, the unit cell volume increases nearly linearly with Zn content; however, an abrupt change occurs in the vicinityx=0.8–0.10. Forx<0.10, the temperature dependence of the electrical resistivity,(T), is metallic-like (d/dT>0) and increases gradually with increasing Zn content. However, forx 0.10,(T) becomes semiconductor-like, with a very rapid increase of the resistivity with increasingx. The electrical resistivity, magnetic susceptibility, EPR spectra, and specific heat all indicate that thed-holes associated with the Cu ions become localized in the nonsuperconducting phase,x>-0.10.