Positive temperature coefficient of resistance of single ZnO nanorods

ZnO nanorods were synthesized by a simple aqueous solution method. Crystal structures and morphology studies show that the ZnO nanorods are single crystalline with the growth direction aligned with the c axis of ZnO. An Au-ZnO nanorod-Au (metal-semiconductor-metal, MSM) device using the synthesized nanorod was fabricated. An electronic model with two back-to-back Schottky diodes in series with a nanorod was used to describe the electrical transport of the MSM device. A positive temperature coefficient of resistance is observed on a single ZnO nanorod from 383 to 473 K. A simple model has been proposed to explain such an abnormal behavior including the effect of the interface states and the adsorption-desorption of the water/oxygen molecules on the surface of the nanorod.     

Ultraviolet photodetector based on single GaN nanorod p–n junctions

The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p–n junctions are reported. Single nanorod p–n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p–n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p–n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.     

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays

Uniform GaN nanorod arrays are grown vertically by selective area growth on (left angle bracket 0001 right angle bracket) substrates. The GaN nanorods present six nonpolar {1?100} facets, which serve as growth surfaces for InGaN-based light-emitting diode quantum well active regions. Compared to growth on the polar {0001} plane, the piezoelectric fields in the multiple quantum wells (MQWs) can be eliminated when they are grown on nonpolar planes. The capability of growing ordered GaN nanorod arrays with different rod densities is demonstrated. Light emission from InGaN/GaN MQWs grown on the nonpolar facets is investigated by photoluminescence. Local emission from MQWs grown on different regions of GaN nanorods is studied by cathodoluminescence (CL). The core-shell structure of MQWs grown on GaN nanorods is investigated by cross-sectional transmission electron microscopy in both axial and radial directions. The results show that the active MQWs are predominantly grown on nonpolar planes of GaN nanorods, consistent with the observations from CL. The results suggest that GaN nanorod arrays are suitable growth templates for efficient light-emitting diodes.     

Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography

Monocrystalline, vertically aligned and faceted GaN nanorods with controlled diameter have been synthesized by selective organometallic vapor phase epitaxy (OMVPE) onto GaN exposed at the bottom of pores in silicon dioxide templates patterned by reactive ion etching through self-organized porous anodic alumina films. This process is free of foreign catalysts, and the nanorod diameter control is achieved without the need for low-throughput nanolithographic techniques. The use of conventional OMVPE growth conditions allows for the straightforward adaptation of conventional doping and heterostructure growth as will be necessary for the fabrication of nanorod-based strain-relaxed electrically pumped lasers and light-emitting diodes.     

Characterization of Pt/a-plane GaN Schottky contacts using conductive atomic force microscopy

We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current-voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.     

Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method

We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.     

Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays

For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and the mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of nanorod light emitting diodes (LEDs) will help identify the correlation between these two factors. In this work, low-temperature electroluminescent (EL) spectra of InGaN/GaN nanorod arrays were explored and compared with those of planar LEDs. The nanorod LED exhibits a much higher optical output percentage increase when the temperature decreases. The increase is mainly attributed to the increased carriers in the quantum wells for radiative recombination. Also, due to a better spatial overlap of electrons and holes in the quantum wells, the increased number of carriers can be more efficiently recombined in the nanorod device. Next, while the nanorod array shows nearly constant peak energy in the EL spectra at various injection currents at the temperature of 300 K, a blue shift has been observed at 190 K. The results suggest that with less non-radiative recombination and thus more carriers in the quantum wells, carrier screening and band filling still prevail in the partially strain relaxed nanorods. Moreover, when the temperature drops to 77 K, the blue shift of both nanorod and planar devices disappears and the optical output power decreases since there are fewer carriers in the quantum wells for radiative recombination.     

Charge influence and growth mechanism of ZnO nanorods

We demonstrate the influence of charges near the substrate surface on vertically aligned ZnO nanorod growth. ZnO nanorods were fabricated on n-type GaN with and without H+ treatments by catalyst-free metal-organic chemical vapor deposition. The ZnO nanorods grown on n-GaN films were vertically well-aligned and had a well-ordered wurtzite structure. However, the ZnO did not form into nanorods and the crystal quality was very degraded as they were deposited on the H+ treated n-GaN films. The charge influence was also observed in the ZnO nanorod growth on sapphire substrates. These results implied that the charges near the substrate surface dominantly affected on the crystalization and formation of ZnO nanorods.     

Charge influence and growth mechanism of ZnO nanorods

We demonstrate the influence of charges near the substrate surface on vertically aligned ZnO nanorod growth. ZnO nanorods were fabricated on n-type GaN with and without H+ treatments by catalyst-free metal-organic chemical vapor deposition. The ZnO nanorods grown on n-GaN films were vertically well-aligned and had a well-ordered wurtzite structure. However, the ZnO did not form into nanorods and the crystal quality was very degraded as they were deposited on the H+ treated n-GaN films. The charge influence was also observed in the ZnO nanorod growth on sapphire substrates. These results implied that the charges near the substrate surface dominantly affected on the crystallization and formation of ZnO nanorods.     

Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance

Electroreflectance studies of Pt/GaN Schottky diodes were performed in the temperature range between 5 and 300 K. The data were analysed using the electric field-dependent dielectric function of GaN and a multi-layer formalism. We observed a thermal activation of electric fields underneath the Schottky contact. The results are explained in terms of temperature-dependent ionised impurity concentration by a model with two donor levels.     

Growth of vertically aligned InGaN nanorod arrays on p-type Si substrates for heterojunction diodes

InGaN nanorod arrays have been grown by molecular beam epitaxy on bare and high-temperature AIN-buffered Si(111) substrates. It has been found that well vertically aligned InGaN nanorod arrays can be grown by using the high-temperature AIN buffer layer. On bare Si substrate, high-resolution transmission electron microscopy revealed an amorphous SiNx layer generated at the interface, and the thickness and flatness of the SiNx layer may affect the relative alignment of the nanorods with the substrate. By using the high-temperature AIN buffer layer, the interface quality was improved, and uniform InGaN nanorods could be grown. N-InGaN nanorods/p-Si heterostructure diodes were fabricated, which exhibit well rectifying behavior with a low turn on voltage of 1.2 eV and an on/off ratio of 7.2 at 2.5 V.     

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.     

Dopant induced polarity inversion in polar ZnO nanorods

Highly oriented and polarity controlled ZnO nanorod thin films are deposited by chemical bath deposition where the preferred polarity depends on the anionic nature of the Zn salt. Significant differences are noticed in magnesium (Mg) doping concentration on Zn- and O-polar ZnO nanorods. Higher doping concentration is achieved in Zn polar nanorods, which is characterized with different spectroscopic techniques. A noteworthy contribution in morphological changes is noted upon by Mg doping on both Zn- and O-polar ZnO nanorods. Polarity inversion of the individual nanorods are found at certain doping condition, characterized by chemical etching rate measurements and Schottky Barrier Height determination of the individual nanorod.     

Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time

The growth and optical properties of GaN nanorods grown on Si(111) substrates by rf plasma assisted molecular-beam epitaxy are investigated by means of field emission scanning electron microscopy and photoluminescence measurements as a function of growth time. It is clearly demonstrated that the rate of growth of the nanorod diameter starts to increase after ～90?min because of the coalescence of neighbouring nanorods. And the optical properties of the samples grown at a high growth rate are dramatically changed due to induced defects. The critical diameter for defect-free GaN nanorods is determined as below ～140?nm under N-rich conditions.     

Asymmetric contacts on a single SnO₂ nanowire device: an investigation using an equivalent circuit model

Electrical contacts between the nanomaterial and metal electrodes are of crucial importance both from fundamental and practical points of view. We have systematically compared the influence of contact properties by dc and EIS (Electrochemical impedance spectroscopy) techniques at various temperatures and environmental atmospheres (N(2) and 1% O(2)). Electrical behaviors are sensitive to the variation of Schottky barriers, while the activation energy (E(a)) depends on the donor states in the nanowire rather than on the Schottky contact. Equivalent circuits in terms of dc and EIS analyses could be modeled by Schottky diodes connected with a series resistance and parallel RC circuits, respectively. These results can facilitate the electrical analysis for evaluating the nanowire electronic devices with Schottky contacts.     

Aluminum/nickel silicide contacts on silicon

The results of a study of the interaction occurring at elevated temperatures between nickel silicide contacts on n-type 〈111〉 silicon and a thin aluminum overlayer are presented. The electrical and structural characteristics of the Al-nickel silicide interaction were investigated using Schottky barrier diodes, Auger electron spectroscopy, X-ray diffraction and scanning electron microscopy. As-grown diodes were found to consist mainly of NiSi and the NiSi-Si interface exhibited a Schottky barrier energy φ_Bn of 0.62 eV. Upon heat treatment the NiSi layer was transformed to the intermetallic NiAl₃, and the barrier energy for the resulting NiAl₃-Si interface was found to be 0.76 eV. The electrical characteristics of the NiAl₃ layer were stable up to 500°C and no evidence of aluminum penetration into the silicon substrate was found.     

The study of Pt Schottky contact on porous GaN for hydrogen sensing

This article reports the studies of Pt Schottky contact on porous n-type GaN for hydrogen sensing. A simpler and improved electroless etching method has been developed to generate porous GaN in which high uniformity of the porous area could be achieved. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contacts onto the porous GaN sample. For comparative study, a standard hydrogen sensor was also prepared by depositing Pt Schottky contacts on the as-grown sample. Hydrogen detection was carried out at room temperature and 100 °C. This Pt/porous GaN sensor exhibited a significant change of current upon exposure to 2% H₂ in N₂ gas as compared to the standard Pt/GaN sensor. Morphological studies by scanning electron microscopy revealed that Pt contact deposited on porous GaN having a very rough surface morphology with pores distributed all over the contact layer. Therefore, the increase of current could be attributed to the unique microstructure at porous Pt/porous GaN interface which allowed higher accumulation of hydrogen and eventually led to stronger effect of the H-induced dipole layer.     

GaN-Based Solar-Ultraviolet Detection Instrument

We report on the fabrication of a solar-UV monitoring system that uses GaN-based photodetectors. GaN photoconductors, p-n junction photodiodes, and Schottky barrier photodiodes have been fabricated and characterized as UV sensors. The best performances are obtained in Schottky photodiodes, which show a linear response, a flat responsivity of 100 mA/W, a visible rejection ratio higher than 10(3), and a noise-equivalent power of 1 nW/Hz(-1/2). Preliminary data on Al(x)Ga(1-x)N (x = 0.15, 0.22) detectors are also presented. Using GaN Schottky diodes, we fabricate and evaluate a complete solar-UV detection head.     

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we have used the technique known as conductive AFM (CAFM) to perform electrical characterization at the nanoscale. The AlGaN/GaN HEMT ohmic (drain and source) and Schottky (gate) contacts were investigated by the CAFM technique. The estimated area of these highly conductive pillars (each of them of approximately 20-50?nm radius) represents around 5% of the total contact area. Analogously, the reverse leakage of the gate Schottky contact at the nanoscale seems to correlate somehow with the topography of the narrow AlGaN barrier regions producing larger currents.     

ZnO nanobelt/nanowire Schottky diodes formed by dielectrophoresis alignment across au electrodes

Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as 2,000. The detailed IV characteristics of the Schottky diodes have been investigated at low temperatures. The formation of the Schottky diodes is suggested due to the asymmetric contacts formed in the dielectrophoresis aligning process.