Characterization of vapor-deposited l-leucine nanofilm

X-ray reflective measurements (XRR), atomic force microscopy and single wavelength ellipsometry were used to investigate the optical properties of thin l-leucine films deposited onto silicon substrates. The ellipsometry data (Ψ,Δ) were fitted with a four-layer-model, and the optical refractive index of the l-leucine film measured with ellipsometry was determined to be 1.37. With the conventional effective medium approximation theory and the ellipsometry results, the density of the l-leucine nanofilm was determined to be 70% (0.81 g/cm³) of crystalline l-leucine. This value was in good agreement with the density of 69% (0.80 g/cm³) obtained with XRR measurement. The ellipsometry measurements also enabled us to estimate the surface roughness or absorption layer of the film. This procedure of combined XRR and ellipsometry measurements could be a powerful tool for the determination of the (otherwise hard-to-determine) refractive index in thin organic material films with a rough surface layer.     

Study of structural,optical and electrical parameters of ZnSe powder and thin films

Nanocrystalline ZnSe powder and thin film forms have been synthesized via chemical bath deposition technique. The ZnSe thin films are deposited onto ultrasonically clean glass substrates in an aqueous alkaline medium using sodium selenosulphate as Se^2? ion source. The ZnSe powder and thin film are characterized by structural, optical and electrical properties. It is confirmed from X-ray diffraction study that cubic phase is present in ZnSe thin film form with (111) as preferred orientation and hexagonal phase is present in ZnSe powder form with (100) as preferred orientation. Optical absorption measurement indicates the existence of direct allowed optical transition with a wide energy gap and blue shift in the fundamental edge has been observed in both cases. The optical band gap of ZnSe powder is greater than the thin film. The electrical conductivity (both dark and photoconductivity) measurements are also carried out in different temperature range and variation in activation energy has been calculated.     

Surface plasmon-driven hot electron flow probed with metal-semiconductor nanodiodes

A continuous flow of hot electrons that are not at thermal equilibrium with the surrounding metal atoms is generated by the absorption of photons. Here we show that hot electron flow generated on a gold thin film by photon absorption (or internal photoemission) is amplified by localized surface plasmon resonance. This was achieved by direct measurement of photocurrent on a chemically modified gold thin film of metal-semiconductor (TiO(2)) Schottky diodes. The short-circuit photocurrent obtained with low-energy photons is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating such that it exhibits surface plasmon. Photocurrent and optical measurements on the connected island structures revealed the presence of a localized surface plasmon at 550 ± 20 nm. The results indicate an intrinsic correlation between the hot electron flow generated by internal photoemission and localized surface plasmon resonance.     

Damp heat stability of AZO transparent electrode and influence of thin metal film for enhancing the stability

The electrical properties of Aluminum doped ZnO (AZO) thin films prepared by sol–gel method were investigated as a function of annealing atmosphere (vacuum, argon +5 % hydrogen and pure hydrogen) and doping concentration (1, 2, 3 and 4 wt%). An optimal annealing atmosphere (pure hydrogen) and doping concentration (2 wt%) was obtained with a minimum resistivity of 1.6 × 10^?3 Ω cm. The structural, optical and electrical stability has been investigated by a damp-heat test in an environment with 85 % relative humidity at 85 °C. The degradation of the electrical film properties was due to the decrease of carrier concentration and mobility, whereas, no significant change was observed for structural and optical properties. The thin metallic layer (Ti or Cr) was deposited on AZO by sputtering to prevent the penetration of oxygen and water into film thus increasing the electrical stability. Oxide layer of metal was formed on surface when it comes to air at room temperature which was confirmed by X-ray photoelectron spectroscopy and thus a bi-layer of metal/metal oxide layer on AZO film enhances the electrical stability.     

Wave propagation and resonance in four-layer systems for organic light-emitting diodes

Wave propagation and surface plasmon resonance are examined in four-layer optical systems in slab geometry for an OLED (organic light-emitting diode) with an embedded thin metal film. For this purpose, both leaky and bound modes are examined in all ranges of the propagation constant, which determines how surface and volume waves are allowed. Intensive parametric studies are performed on the thicknesses of the two embedded layers, along with the cathode condition and the metal's material dispersion. As a way of interpreting the results, the direction of the depthwise wave propagation is examined in connection with possible excitations arising from light sources within the organic electroluminescence layer. Consequently, several new features are observed on the multiple-wave branches, including exchange of the phase speeds and depthwise standing waves for dissipationless systems. By the insertion of a thin metal film, the light extraction is found to be enhanced through leaky waves from the source layer out toward the viewer's side.     

Characterization of the small molecule based organic thin film fabricated by electrospray deposition technique

A novel route for the fabrication of the SM based 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) organic thin film by electrospray deposition (ESD) technique has been presented in this paper. The tailoring of the film thickness was also performed by varying the number of deposition passes at a constant substrate speed. The structural and optical characterizations of the fabricated BCP thin film were thoroughly investigated. The energy gap of the fabricated thin film was measured to be 3.5 eV. Furthermore, the electrical performance of the BCP thin film was verified by performing current–voltage measurement of the prototype organic diode device having fabricated BCP film as a buffer layer. The current density–voltage characteristic curve of the organic device showed non linear diode like behavior, thereby confirming the proper interference established between organic diode adjacent layers. At low voltage, the device showed ohmic conduction, where as the space charged limited current and trap charge limited current mechanism have been found to be dominant in the fabricated organic device at higher voltage. Overall, the results suggest that the ESD approach will be promising for organic semiconductor device fabrication at low cost and with low material loss.     

Low cost CuInSe2 thin films production by stacked elemental layers process for large area fabrication of solar cell application

Low cost deposition of large area CuInSe₂ (CIS) thin films have been grown on Mo-coated glass substrate by simple and economic stacked elemental layer deposition technique in vacuum. The grown parameters such as concentration of Cu, In and Se elements have been optimized to achieve uniform thin film in vacuum chamber. The as-grown Cu/In/Se stacked layers have been annealed at 200 °C and 350 °C for 1 h in air ambient. The as-grown and annealed films have been further subjected to characterization by X-ray diffraction (XRD), optical absorption, atomic force microscopy (AFM) and I-V measurement techniques. XRD patterns revealed that as-grown Cu/In/Se stacked layers represent amorphous nature while annealed CIS film reproduces nano-polycrystalline nature with chalcopyrite structure. The optical band gap of annealed films increases with respect to air annealing which confirms the reduction of crystallite size. Surface morphology of as-grown Cu/In/Se stacked layers and annealed CIS thin films have been confirmed by AFM images. The electrical measurements show enhancement of conductivity which is useful for solar cell application.     

Preparation and characterization of amorphous manganese sulfide thin films by SILAR method

Manganese sulfide thin films were deposited by a simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method using manganese acetate as a manganese and sodium sulfide as sulfide ion sources, respectively. Manganese sulfide films were characterized for their structural, surface morphological and optical properties by means of X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The as-deposited film on glass substrate was amorphous. The optical band gap of the film was found to be thickness dependent. As thickness increases optical band gap was found to be increase. The water angle contact was found to be 34°, suggesting hydrophilic nature of manganese sulfide thin films. The presence of Mn and S in thin film was confirmed by energy dispersive X-ray analysis.     

Development of electrodeposited ZnTe layers as window materials in ZnTe/CdTe/CdHgTe multi-layer solar cells

Zinc telluride (ZnTe) thin films have been deposited on glass/conducting glass substrates using a low-cost electrodeposition method. The resulting films have been characterized using various techniques in order to optimize growth parameters. X-ray diffraction (XRD) has been used to identify the phases present in the films. Photoelectrochemical (PEC) cell and optical absorption measurements have been performed to determine the electrical conductivity type, and the bandgap of the layers, respectively. It has been confirmed by XRD measurement that the deposited layers mainly consist of ZnTe phases. The PEC measurements indicate that the ZnTe layers are p-type in electrical conduction and optical absorption measurements show that their bandgap is in the range 2.10–2.20 eV. p-Type ZnTe window materials have been used in CdTe based solar cell structures, following new designs of graded bandgap multi-layer solar cells. The structures of FTO/ZnTe/CdTe/metal and FTO/ZnTe/CdTe/CdHgTe/metal have been investigated. The results are presented in this paper using observed experimental data.     

Comparison of p-channel transistors based on α,ω-hexyl-distyryl-bithiophene prepared using various film deposition methods

We present a series of organic thin film transistor (OTFT) devices realized by vacuum evaporation, spin-coating, drop casting and inkjet printing and a comparative analysis of their electrical response/behavior obtained under identical measurement conditions. A small molecule, α,ω-hexyl-distyryl-bithiophene DH-DS2T, was used as a hole transporting active layer. Structure and morphology of thin films have been studied by atomic force microscopy, X-ray diffraction and optical microscopy. Different parameters linked directly to the processes (solvent, concentration, deposition method, surface, post-treatment…) are identified as key factors controlling film quality/crystallinity and device performances. This systematic study reveals the factors that limit efficient charge transport at the macroscopic scale of the channel length in OTFT devices.     

Influence of the electro-optical properties of an α-Si:H single layer on the performances of a pin solar cell

We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependence of the activation energy to satisfy the Meyer-Neldel rule. Finally, the influence of the individual films parameters upon the final performances of a single junction pin α-Si:H have been studied. The measurements show how a more than doubled enhancement in energy conversion efficiency can be obtained in an α-Si:H solar cell with a proper selection of synthesis conditions.     

Enhancement of photosensitivity by annealing in Bi2S3 thin films grown using SILAR method

Bi₂S₃ thin films were grown by successive ionic layer adsorption and reaction method (SILAR) onto the glass substrates at room temperature. The as prepared thin film were annealed at 250 °C in air for 30 min. These films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and electrical measurement systems. The X-ray diffraction patterns reveal that Bi₂S₃ thin film have orthorhombic crystal structure. SEM images showed uniform deposition of the material over the entire glass substrate. The optical energy band gap observed to be decreased from 1.69 to 1.62 eV for as deposited and annealed films respectively. The I–V measurement under dark and illumination condition (100 W) show annealed Bi₂S₃ thin film gives good photoresponse as compared to as deposited thin film and Bi₂S₃ thin film exhibits photoconductivity phenomena suggesting its useful in sensors device. The thermo-emf measurements of Bi₂S₃ thin films revealed n-type electrical conductivity.     

Recent Advances in Organic Photovoltaics: Device Structure and Optical Engineering Optimization on the Nanoscale

Organic photovoltaic (OPV) devices, which can directly convert absorbed sunlight to electricity, are stacked thin films of tens to hundreds of nanometers. They have emerged as a promising candidate for affordable, clean, and renewable energy. In the past few years, a rapid increase has been seen in the power conversion efficiency of OPV devices toward 10% and above, through comprehensive optimizations via novel photoactive donor and acceptor materials, control of thin‐film morphology on the nanoscale, device structure developments, and interfacial and optical engineering. The intrinsic problems of short exciton diffusion length and low carrier mobility in organic semiconductors creates a challenge for OPV designs for achieving optically thick and electrically thin device structures to achieve sufficient light absorption and efficient electron/hole extraction. Recent advances in the field of OPV devices are reviewed, with a focus on the progress in device architecture and optical engineering approaches that lead to improved electrical and optical characteristics in OPV devices. Successful strategies are highlighted for light wave distribution, modulation, and absorption promotion inside the active layer of OPV devices by incorporating periodic nanopatterns/nanostructures or incorporating metallic nanomaterials and nanostructures.     

CdSe thin films: morphological, optoelectronic and photoelectrochemical studies

Polycrystalline cadmium selenide (CdSe) thin films have been synthesized at room temperature by using chemical bath deposition method. The synthesized films were characterized by using X-ray diffraction (XRD), optical absorbance, electrical conductivity, scanning electron microscope, energy dispersive X-ray analysis, photoluminescence and photoelectrochemical (PEC) techniques. The film of 0.84 μm thickness, deposited on glass substrate showed uniform spherical morphology with an optical band gap of 1.99 eV. The XRD analysis confirmed presence of cubic structure. Scanning electron micrograph shows a typical spherical ball like morphology with large surface area, which is useful for absorption of large solar radiation. The conductivity measurements showed n type semiconducting nature of the film. A PEC cell device fabricated using ‘as deposited’ CdSe film as anode showed a stable conversion efficiency of 0.7 %.     

Influence of anode roughness and buffer layer nature on organic solar cells performance

Fluorine doped transparent conductive tin oxide thin films (FTO) of different surface roughness have been deposited by chemical vapor deposition (FTO_SOL), classical chemical spray pyrolysis (FTO_CSP), and spray pyrolysis onto heated substrates using infra red irradiation (FTO_IRSP); the three deposition methods inducing different surface roughness. It was found that the different FTOs presented similar electrical properties while their structural, morphological and optical properties were related to surface properties. These FTO films have been used as anode in multilayer organic solar cells, based on coupled donor/acceptor-copper phthalocyanine/fullerene. To improve solar cell performance, buffer layers of different natures have been tried at the anode/organic material interface. Deposition of a thin molybdenum oxide film onto FTO smooth films afforded reproducible devices with performance similar to those obtained with indium tin oxide anodes. However, cell efficiency decreased as FTO surface roughness increased. The degree of degradation depended on the nature of the buffer layer. We show that it is necessary to use buffer layer material that allows consistency and completeness of the electrode coverage.     

Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing agent and NH₄OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be of the order of 411 × 10³ Ω-cm at 523 K temperature with an activation energy of ∼ 0.2 eV. The optical absorption studies show that films have direct band gap (1.41 eV).     

磁控溅射法制备的CdS:Al薄膜的性质研究

采用Al和CdS双靶共溅射的方法, 调控Al和CdS源的沉积速率, 制备出不同Al掺杂浓度的CdS:Al薄膜。通过XRD、SEM、AFM、紫外-可见透射光谱分析、常温霍尔测试对CdS: Al薄膜的结构、形貌、光学和电学性质进行表征。XRD结果表明, 不同Al掺杂浓度的CdS:Al薄膜均为六方纤锌矿结构的多晶薄膜, 并且在(002)方向择优生长。SEM和AFM结果表明, CdS:Al薄膜的表面均匀致密, 表面粗糙度随着Al掺杂浓度的增加略有增加。紫外-可见透射光谱分析表明, CdS:Al薄膜禁带宽度在2.42~2.46 eV 之间, 随着Al掺杂浓度的增加而略微减小。常温霍尔测试结果证明, 掺Al对CdS薄膜的电学性质影响显著, 掺Al原子浓度3.8%以上的CdS薄膜, 载流子浓度增加了3个数量级, 电阻率下降了3个数量级。掺Al后的CdS薄膜n型更强, 有利于与CdTe形成更强的内建场, 从而提高太阳电池效率。用溅射方法制备的CdS:Al薄膜的性质适合用作CdTe薄膜太阳电池的窗口层。     

IZO/Al/GZO multilayer films to replace ITO films

Multilayer transparent conducting oxide (TCO) film structures have been designed and fabricated to achieve both high conductivity and high transmittance. In this article we report a buffering method and introduction of an aluminum (Al) interlayer to enhance the electrical conductivity of the IZO/Al/GZO/ZnO multilayer film on glass. Hall measurement results show that this multilayer film has a remarkable increase in mobility compared to those without using an Al interlayer. The surface morphology shows a decrease in surface roughness as the Al layer thickness increases. We have shown that the use of a thin Al interlayer enhances the electrical conductivity without sacrificing its optical transmittance much. By optimizing the thickness of the Al layer, the lowest resistivity of 2.2 × 10⁻⁴ Ω cm and an average transmittance higher than 75% in a range from 400 to 800 nm have been achieved. These properties are acceptable for future TCO applications.     

Analysis of structurally heterogeneous Langmuir-Blodgett films of folded/unfolded long-chain molecules by infrared multiple-angle incidence resolution spectroscopy

Infrared multiple-angle incidence resolution spectroscopy (IR MAIRS) has been employed for the structural analysis of a heterogeneous multilayer Langmuir-Blodgett (LB) film of ketomycolic acid (keto-MA). Keto-MA was chosen for the study because the molecule changes its conformation largely, which depends on the layer structure of the LB film: the long alkyl chain with a keto group remains folded when it has no counter layer for interdigitation. IR MAIRS is a surface analytical technique that was originally developed to analyze anisotropic structure in a thin film prepared on an IR transparent material. In the present study, however, a newly found characteristic of MAIRS has been used to discuss the molecular conformation and the interdigitation architecture between two adjacent monolayers. As expected theoretically, the molecular folding was clearly detected as "IR MAIRS shift". Subtraction of the IR MAIRS spectra of single- and triple-monolayer LB film of keto-MA yielded unambiguous results for the interdigitated double layer in the triple-monolayer LB film, and the layer sequence was also revealed.     

Comparing molybdenum oxide thin films prepared by magnetron sputtering and thermal evaporation applied in organic solar cells

We have presented an organic polymer-fullerene solar cell with molybdenum oxide (MoO_x) film prepared by direct current magnetron sputtering (sMoO_x) and thermal evaporation (eMoO_x) as a hole transport layer (HTL), respectively. The result shows that best power conversion efficiency (PCE) of the device using sMoO_x as HTL is 3.84 %, while the PCE of the devices with eMoO_x film is 3.33 %. The intrinsic mechanisms behind the PCE difference were studied by analyzing the morphology, electrical and optical properties of MoO_x thin films prepared by the different methods. The higher PCE obtained in the cells with sMoO_x may be due to the smoother interface and higher absorption of the active layer.