利用有机覆盖层提高OLED出光效率

将Alq作为覆盖层真空蒸镀到玻璃基板后制作底发射有机电致发光器件(OLED),所制备的器件结构为:Glass/Alq(xnm)/Al(15nm)/MoO3(30nm)/NPB(60nm)/Alq(65nm)/LiF(1nm)/Al(150nm)。通过研究器件光辐射特性曲线,可以看出覆盖层厚度的变化引起光的干涉效应的变化是导致电致发光变化的原因,广角干涉和多光束干涉之间的相互作用可以通过覆盖层的厚度来调节,并且半透明的Al膜做阳极,将覆盖层蒸镀到阳极之外玻璃基板上,半透明的铝膜和覆盖层与阴极组成微腔器件,通过改变覆盖层的厚度调节微腔的腔长,使OLED电致发光光谱的中心波长发生红移。     

光输出增强型微腔OLED器件研究

文章利用特制的玻璃作为OLED基板,一面为平整光滑的平面,另一面为具有规则凹凸形貌的粗化面。采用光输出增强型微腔OLED结构,器件结构为:玻璃基板(光面)/Al(15nm)/MoO3(40nm)/NPB(30nm)/Alq3(30nm):C545T(3%)/Alq3(20nm)/LiF(1nm)/Al(150nm),研究了器件的电流密度、亮度、发光效率、光致发光光谱等特性。结果表明,这种结构的器件相比于传统微腔型器件,相同电压下亮度约增加了40%,发光效率约提高了15%,具有更强的光萃取能力。     

一种新型双空穴注入层微腔OLED

一种新型有机电致发光二极管的阳极结构,在玻璃衬底上以半透明的Al膜为出光面,通过在空穴注入层(HAT-CN)和空穴传输层(NPB)中间插入三氧化钼(MoO3)层,制备了底发射微腔OLEDs。所制备的器件结构为Glass/Al(15nm)/HAT-CN(10nm)/MoO3(x nm)/NPB(30nm)/Alq3(70nm)/LiF(1nm)/Al(150nm)。通过电流密度-电压-亮度性能说明该结构有利于降低驱动电压和增强器件亮度。器件的最高亮度可以达到14 390cd/m2,起亮电压为3.4V左右。设计的空穴型器件证明了该器件结构具有很好的空穴注入和传输特性。研究了光谱窄化和峰值偏移的微腔效应。     

光学微腔调节顶发射单色绿光OLED微显示器件色纯度研究

有机电致发光器件的发光颜色与色纯度在很大程度上受限于有机材料本身特性,而通过光学微腔效应可以从器件结构的改变来进行色纯度的调节。本文介绍了一种通过调节有机结构中空穴传输层和电子阻挡层厚度,从而改变器件微腔腔长,获得高纯度顶发射单色发光器件的方法。利用这种方法制作的有机顶发射绿色磷光器件结构为Si Substrate/Ag/ITO/ NPB: F16CuPc(10 nm, 3%)/NPB(x nm)/ TCTA(y nm)/ mCP: Ir(ppy)₃(40 nm, 6%)/ Bphen: Liq(30 nm, 40%)/Mg: Ag(12 nm, 10%)/Alq₃(35 nm),改变NPB和TCTA的厚度,获得了高色纯度发光器件,正向出射绿光的色坐标达到(0.2092,0.7167),接近标准绿光(0.21, 0.71)。     

微腔结构对红光磷光OLED的性能的影响研究

使用新型红光磷光材料R-4B作为微腔有机电致发光显示器(OLED)的发光层,高反射Al阴极和半透半反Al阳极为微腔的两端反射镜。制备的器件结构为Al(10nm)/MoOx(Ynm)/NPB(40nm)/TCTA(10nm)/CBP:R-4B(4%)(30nm)/BCP(10nm)/AlQ(40nm)/LiF(1nm)/Al(100nm)。讨论了腔长的变化对器件性能的影响。结果表明,微腔结构可以使光谱窄化,随着MoOx厚度Y的增加,其峰值波长由600nm增至668nm。当MoOx厚度为40nm时,其发光强度最大,峰值波长为608nm,半高宽(FWHM)为50nm,器件的最大亮度为35 300cd/cm2,最大效率可达23.5cd/A,得到了性能较好的红色磷光OLED。     

透明叠层结构Ag/MoO_3/Ag阳极对绿光OLED器件性能的影响

本文采用一种结构为Ag/MoO_3/Ag的金属/氧化物/金属(M_1/O/M_2)叠层替代ITO作为OLED器件的阳极,研究Ag/MoO_3/Ag叠层结构变化对于OLED器件电极透过率、亮度、光谱等性能的影响。实验采用真空蒸镀方法制备了一系列器件,器件结构为Ag/MoO_3/Ag/MoO_3(10nm)/NPB(40nm)/Alq_3(60nm)/LiF(1nm)/Al(150nm)。对比器件的电压-电流密度、电压-亮度、光谱特性等数据,表明Ag/MoO_3/Ag的结构为20/20/10(nm)时,器件性能较好。在驱动电压为11V时,其亮度达到18 421cd/m~2,电流效率为2.45cd/A;且因器件中存在微腔效应,其EL光谱蓝移,半高宽变窄。但考虑到530nm处其电极透过率仅为17%,所以经换算该器件实际发光亮度比ITO电极器件更高。该Ag/MoO_3/Ag叠层阳极制作相对简单,经优化后在顶发射和柔性OLED器件方面将具有一定的应用前景。     

基于PEN柔性衬底的顶发射微腔OLED性能研究

设计了结构为Ag/MoOx空穴注入层(HIL)/有机层/LiF/Al/Ag/Alq3的柔性有机电致发光器件(FOLED),研究通过改变HIL层的厚度改变腔长实现对微腔效应的调节,制备了性能优化的微腔FOLED。通过器件性能的对比,得到了可用Ag作为反射阳极的顶发射微腔FOLED全彩显示器件优化结构,即蓝、绿和红FOLED对应的优化HIL层厚度分别为100nm、120nm和160nm。     

粗化玻璃基板对OLED的影响

研究了粗化玻璃对有机电致发光器件的影响,分别在玻璃基板的平滑面及粗糙面上制作有机电致发光器件。所制备的器件结构为Al(15nm)/MoO3(60nm)/NPB(40nm)/Alq3∶C545T(2%,30nm)/Alq3(20nm)/LiF(1nm)/Al(100nm)。从电流密度-电压-亮度性能及光谱特性等方面对两种器件进行了对比分析。实验结果显示:当蒸镀面为平面时,电流密度及亮度均比粗面型高,其最高亮度达到24 410cd/m2。不同蒸镀面器件的相对光谱几乎没有变化,但粗面型器件存在黑斑,对其产生的原因进行了探讨。     

微腔结构顶发射有机白光器件

结合微腔效应,通过调节不同发光层的厚度制作了顶发射有机白光器件.器件结构为Si/Ag/Ag2O/m-MTDATA/NPB/DPVBi/DCJTB:Alq3/Alq3/LiF/Al/Ag,其中DPVBi,DCJTB与Alq3的掺杂层分别作为蓝光和红光发光层,在选定490 nm的谐振波长时,通过调节DPVBi和掺杂层的厚度来实现对器件发光色度的调节.当DPVBi厚度为1 nm,电压为9 V时,器件的色坐标为(0.33,0.34),非常接近白光等能点.此项工作为利用微腔效应制作高效率高亮度顶发射白光器件奠定了基础.     

高亮度微腔有机电致发光器件

为了实现有机电致发光器件(OLED)发射光谱的窄化和高亮度,真空热蒸镀具有不同微腔结构的OLED(MOLED):玻璃衬底/分布式布拉格反射器(DBR)(1～4对的SiO2/Ta2O5层)/ITO/空穴传输层(HTL,α-NPD)/发光层(EML,Alq3:Rubrene或Alq3:Coumarin6)/电子传输层(ERL,Alq3)LiF/Mg/Ag,其中沉积DBR结构采用电子束沉积法。实验表明:该MOLED的发射光谱半波长宽度(FWHM)随DBR层数的增加而减小至最小值10nm;并且在2层DBR时,掺杂Rubrene器件得到更大的电流效率,约20cd/A,最大亮度为2.6×105cd/m2。研究发现,蓝光MOLED能够对自发光产生吸收现象,降低了出光效率。     

Luminescent high temperature sensor based on the CdSe/ZnS quantum dot thin film

A high temperature sensor based on the multi-parameter temperature dependent characteristic of photoluminescence （PL） of quantum dot （QD） thin film is demonstrated by depositing the CdSe/ZnS core/shell QDs on the SiO2 glass substrates. The variations of the intensity, the peak wavelength and the full width at half maximum （FWHM） of PL spectra with temperature are studied experimentally and theoretically. The results indicate that the peak wavelength of the PL spectra changes linearly with temperature, while the PL intensity and FWHM vary exponentially for the tem- perature range from 30 ℃ to 180 ℃. Using the obtained temperature dependent optical parameters, the resolution of the designed sensor can reach 0.1 nm/℃.     

Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

Titanium (15 nm)/aluminum (60 nm)/rhenium (20 nm)/gold (50 nm) ohmic contacts to moderately doped n-type GaN (4.07×10¹⁸ cm⁻³) have been investigated as a function of annealing temperature. It is shown that the current-voltage (I–V) characteristics of the contacts are improved upon annealing at temperatures in the range of 550–750°C. Specific contact resistance as low as 1.3 × 10⁻⁶ Ωcm² is obtained after annealing at 750°C for 1 min in a nitrogen ambient. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the sample annealed at 750°C shifts toward the high binding side by 0.71 eV compared with that of the as-deposited one. It is also shown that the contact does not seriously suffer from thermal degradation even when annealed at 750°C for 30 min. Based on Auger electron spectroscopy (AES), glancing angle x-ray diffraction (GXRD), and XPS results, possible explanations for the annealing-induced improvement of the ohmic behavior are described and discussed.     

Color-saturated and angle-stable blue top-emitting organic light-emitting diodes based on semitransparent bilayer cathode: Theory and experiment

Based on a modified electromagnetic theory, a bilayer metal cathode consisting of an electron injection layer and a silver (Ag) layer is designed to improve the color chromaticity in blue top-emitting organic light-emitting diodes (TEOLEDs). The effects of the complex refractive index of the electron injection material on the reflectivity and transmittivity of the bilayer cathode are investigated in detail, and then samarium (Sm) is selected as the electron injection material due to its proper refractive index of ～1.22 + 1.12i and work function of ～2.7 eV. Then, the emission peak wavelength, the full width at half maximum, and the Commission International de L’Eclairage coordinates of the blue TEOLEDs with different Sm/Ag bilayer cathodes are calculated and discussed. According to the theoretical results, a blue TEOLED with the optimized bilayer cathode of Sm (15 nm)/Ag (5 nm) is fabricated. The measurement results indicate that the blue TEOLED possesses an excellent chromaticity which is even better than that of a bottom-emitting organic light-emitting diode. Besides, the excellent angle stability is observed in the blue TEOLED even with a large viewing angle change of 0–75°.     

Ambipolar Conductive 2,7‐Carbazole Derivatives for Electroluminescent Devices

A series of 2,7‐disubstituted carbazole (2,7‐carb) derivatives incorporating arylamines at the 2 and 7 positions are synthesized via palladium‐catalyzed C–N or C–C bond formation. These compounds possess glass transition temperatures ranging from 87 to 217 °C and exhibit good thermal stabilities, with thermal decomposition temperatures ranging from 388 to 480 °C. They are fluorescent and emit in the purple‐blue to orange region. Two types of organic light emitting diodes (OLEDs) were constructed from these compounds: (I) indium tin oxide (ITO)/2,7‐carb (40 nm)/1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene (TPBI, 40 nm)/Mg:Ag; and (II) ITO/2,7‐carb (40 nm)/tris(8‐hydroxyquinoline) aluminum (Alq₃, 40 nm)/Mg:Ag. In type I devices, the 2,7‐disubstituted carbazoles function as both hole‐transporting and emitting material. In type II devices, light is emitted from either the 2,7‐disubstituted carbazole layer or Alq₃. The devices appear to have a better performance compared to devices fabricated with their 3,6‐disubstituted carbazole congeners. Some of the new compounds exhibit ambipolar conductive behavior, with hole and electron mobilities up to 10^–4 cm² V^–1 s^–1.     

Growth and characterization of GaN thin films on SiC SOI substrates

SiC semiconductor-on-insulator (SOI) structures have been investigated as substrates for the growth of GaN films. The SiC SOI was obtained through the conversion of Si SOI wafers by reaction with propane and H₂. (111) SiC SOI have been produced by this carbonization process at temperatures ranging from 1200 to 1300°C. X-ray diffraction (XRD) and infrared spectroscopy (FTIR) are used to chart the conversion of the Si layer to SiC. Under our conditions, growth time of 3 min at 1250°C is sufficient to completely convert a 1000? layer. XRD of the SiC SOI reveals a single SiC peak at 2θ = 35.7° corresponding to the (111) reflection, with a corrected full width at half-maximum (FWHM) of ~590±90 arc-sec. Infrared spectroscopy of SiC SOI structures obtained under optimum carboniza-tion conditions exhibited a sharp absorption peak produced by the Si-C bond at 795 cm⁻¹, with FWHM of ∼ 20–25 cm⁻¹. Metalorganic CVD growth of GaN on the (111) SiC SOI was carried out with trimethylgallium and NH₃. The growth of a thin (≤200?), low temperature (500°C) GaN buffer layer was followed by the growth of a thick (∼2 μm) layer at 1050°C. Optimum surface morphology was obtained for zero buffer layer. XRD indicates highly oriented hexagonal GaN, with FWHM of the (0002) peak of ~360±90 arc-sec. Under high power excitation, the 300°K photoluminescence (PL) spectrum of GaN films exhibits a strong near band-edge peak (at λ_p~371 nm, with FWHM = 100–150 meV) and very weak yellow emission. Under low power excitation, the 370 nm PL emission from the GaN/SiC SOI structure increases rapidly with SiC carbonization temperature, while the yellow band (∼550–620 nm) correspondingly decreases.     

室温下制备的ZnO/Ag/ZnO多层膜的性能

采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法在室温下制备了不同厚度的ZnO/Ag/ZnO多层膜。对样品进行了研究。结果表明:随着Ag层厚度的增加,ZnO(002)衍射峰的强度先增加后减小,Ag(111)衍射峰的强度增强,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定。ZnO膜厚度增加,Ag膜易形成晶状结构,ZnO/Ag/ZnO多层膜的透射峰向长波方向移动。ZnO(60nm)/Ag(11nm)/ZnO(60nm)膜在554nm处的透过率高达92.3%,面电阻为4.2?/□,品质常数?TC最佳,约40×10–3/?。     

Effect of flux on the wetting characteristics of SnAg, SnCu, SnAgBi, and SnAgCu lead-free solders on copper substrates

The effect of flux on the wetting characteristics of four lead-free solders, Sn-3.5Ag, Sn-0.7Cu, Sn-3.5Ag-4.8Bi, and Sn-3.8Ag-0.7Cu (wt.%), on copper substrates have been studied at 240, 260, and 280°C. The fluxes investigated were rosin (R), mildly activated rosin (RMA), and activated rosin (RA). The wetting tests were conducted using the sessile-drop method. Results showed that fluxes significantly affect the wetting properties of the solders. Contact angles ranging from 10° to 30° for RMA, 20° to 30° for RA, and 35° to 60° for R were obtained. The effect of temperature on contact angle depended on the type of flux used. The contact angle decreased with increasing temperature; however, in some cases the contact angle was independent of temperature. The Sn-3.5Ag-4.8Bi exhibited the lowest contact angles indicating improved wettability with addition of bismuth. The microstructure of the solder/copper interface was analyzed by scanning electron microscopy.     

Ag层的厚度对ZnO/Ag/ZnO多层膜性能的影响

采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法制备了不同厚度Ag夹层的ZnO(60nm)/Ag/ZnO(60nm)多层膜.分别用X射线衍射仪、紫外可见分光光度计、四探针测试仪对样品的结构、光学性质、电学性质进行了研究.结果表明:随着Ag层厚度的增加,ZnO/Ag/ZnO多层膜呈现多晶结构,Ag(111)衍射峰的强度增强.Ag夹层厚度为11nm时,ZnO(60nm)/Ag/ZnO(60nm)膜在554nm处的透过率高达92.3%.随着Ag层厚度的增加,Ag膜的特征吸收峰呈现红移和宽化,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定.     

Ag层的厚度对ZnO/Ag/ZnO多层膜性能的影响

采用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Ag靶的方法制备了不同厚度Ag夹层的ZnO(60nm)/Ag/ZnO(60nm)多层膜.分别用X射线衍射仪、紫外可见分光光度计、四探针测试仪对样品的结构、光学性质、电学性质进行了研究.结果表明:随着Ag层厚度的增加,ZnO/Ag/ZnO多层膜呈现多晶结构,Ag(111)衍射峰的强度增强.Ag夹层厚度为11nm时,ZnO(60nm)/Ag/ZnO(60nm)膜在554nm处的透过率高达92.3%.随着Ag层厚度的增加,Ag膜的特征吸收峰呈现红移和宽化,ZnO/Ag/ZnO多层膜的面电阻先减小后趋于稳定.     

Metallic Nanowire Coupled CsPbBr3 Quantum Dots Plasmonic Nanolaser

Plasmonic nanolasers provide a valuable opportunity for expanding sub-wavelength applications. Due to the potential of on-chip integration, semiconductor nanowire (NW)-based plasmonic nanolasers that support the waveguide mode attract a high level of interest. To date, perovskite quantum dots (QDs) based plasmonic lasers, especially nanolasers that support plasmonic-waveguide mode, are still a challenge and remain unexplored. Here, metallic NW coupled CsPbBr₃ QDs plasmonic-waveguide lasers are reported. By embedding Ag NWs in QDs film, an evolution from amplified spontaneous emission with a full width at half maximum (FWHM) of 6.6 nm to localized surface plasmon resonance (LSPR) supported random lasing is observed. When the pump light is focused on a single Ag NW, a QD-NW coupled plasmonic-waveguide laser with a much narrower emission peak (FWHM = 0.4 nm) is realized on a single Ag NW with the uniform polyvinylpyrrolidone layer. The QDs serve as the gain medium while the Ag NW serves as a resonant cavity and propagating plasmonic lasing modes. Furthermore, by pumping two Ag NWs with different directions, a dual-wavelength lasing switch is realized. The demonstration of metallic NW coupled QDs plasmonic nanolaser would provide an alternative approach for ultrasmall light sources as well as fundamental studies of light matter interactions.