共查询到20条相似文献,搜索用时 78 毫秒
1.
本文介绍大信号负载牵引测试简况、负载牵引测试的目的和意义,并重点提出以调配器为核心组建负载牵引自动测试系统的技术方案,较好地解决了微波功率FET的大信号测试问题. 相似文献
2.
文章针对S参数提取微波功率FET小信号等效电路参数方法,着重论述二种改进的算法,并应用于我所研制的微波功率2100μm栅宽的GaAsMESFET管芯的小信号等效电路13只元件参数计算,计算得出的S参数与实验数据相吻合,提高了计算速度和精度。 相似文献
3.
4.
5.
本文根据测出的FET的小信号S参数和静态,I-V特性建立了场效应管的大信号模型,然后应用谐波平衡法对FET基波和谐波振荡器进行了分析和优化设计,得到了振荡器稳态时的电流值。并采用一种简化的CAD方法求出了最佳功率输出时的外电路参数。在此基础上,研制了基波和Q波段、二次谐波振荡器。实验结果与理论分析基本一致。 相似文献
6.
提出适用于功率GaAsFET的新的大信号模型以及脉冲I-V和小信号S参数相结合的整体化参数提取方法。用研制出的大信号建模软件提取了功率FET的大信号模型参数,并用该模型模拟和测量了器件大信号S参数,结果完全一致。 相似文献
7.
8.
电子元器件在工作状态都存在着一定的功率损耗,二极管也不例外,尤其是功率二极管,其功率损耗更为显著。本文通过对功率二极管工作周期过程的剖析,详细阐述了二极管的功率损耗来源、组成极其详细的数学计算模型。 相似文献
9.
A GaAs-based planar Schottky varactor diode (PSVD) is successfully developed to meet the demand of millimeter-wave harmonic generation. Based on the measured S-parameter, I-V and C-V characteristics, an accurate and reliable extraction method of the millimeter-wave large signal equivalent circuit model of the PSVD is proposed and used to extract the model parameters of two PSVDs with Schottky contact areas of 160 μm2 and 49 μm2, respectively. The simulated S-parameter, I-V and C-V performances of the proposed physics-based model are in good agreement with the measured one over the frequency range from 0.1 to 40 GHz for wide operation bias range from -10 to 0.6 V for these two PSVDs. The proposed equivalent large signal circuit model of this PSVD has been proven to be reliable and can potentially be used to design microwave circuits. 相似文献
10.
针对功率二极管反向恢复既快又软的开关特性要求,根据Rajapakse.二极管反向恢复模型,模拟二极管反向恢复I-t、V-t变化规律,模拟结果与已有文献结果吻合,通过控制变量得到不同存储时间trra、恢复时间trrb、正向电流If、正向电流上升速率dIf/dt对反向恢复电流的影响,模拟结果表明:trra,trrb跟二极管反向恢复过程密切相关。文中最后分析计算了不同电压,不同电流下二极管反向恢复过程中的功率损耗。 相似文献
11.
Sun Lu Wang Jiali Wang Shan Li Xuezheng Shi Hui Wang Na Guo Shengping 《半导体学报》2009,30(6):064003-064003-4
Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits. 相似文献
12.
为了使半导体激光器的电路级模拟更容易,本文建立了一个有光反馈的半导体激光器大信号SP CE模型,并对激光器的开启延时、张驰振荡和稳定时的光功率与光纤到激光器发光端面的距离及反射光功率大小间的关系进行了研究. 相似文献
13.
14.
针对DUMAX和KLIPPLE系统在大信号测试方面所存在的差别,分析了两个系统在动态测量过程中对最大位移量计算所存在的差异性,并通过分析电感可能出现的几种情况证明了KLIPPEL所计算的最大位移量总是小于DUMAX所计算的最大位移量,两系统关于最大位移量所存在这一确定大小关系。 相似文献
15.
S. Selberherr 《Microelectronics Reliability》1984,24(2):225-257
The appearance of Very Large Scale Integration caused a pronounced interest in concentrating on process and device modeling. The fundamental properties which represent the basis for all device modeling activities are summarized. The sensible use of physical and technological parameters is discussed and the most important physical phenomena which are required to be taken into account are scrutinized. The assumptions necessary for finding a reasonable trade-off between efficiency and effort for a model synthesis are recollected. Methods to bypass limitations induced by these assumptions are pin-pointed. Formulae that are applicable in a simple and easy way for the physical parameters of major importance are presented. The necessity of a careful parameter-selection, based on physical information, is shown. Some glimpses on the numerical solution of the semiconductor equations are given. The discretisation of the partial differential equations with finite differences is outlined. Linearisation methods and algorithms for the solution of large sparse linear systems are sketched. Results of our two dimensional MOSFET model — MINIMOS — are discussed. Much emphasis is laid on the didactic potential of such a complex high order model. 相似文献
16.
在描述弱非线性微波系统的传统方法中,很难通过直接测量得到表征系统非线性的参数。为了解决这个问题,引入了非线性大信号散射函数的概念,描述了非线性散射函数的线性化,表征了弱非线性系统的设计特性,设计出大信号散射参数测量电路,实际测量出非线性散射参数,利用得到的数据训练Elman人工神经网络来对实测的大信号散射参数建模,得到了相应的函数曲线,具有可预见性的特点。 相似文献
17.
T. Paul Chow 《Microelectronic Engineering》2006,83(1):112-122
The recent progress in the development of high-voltage SiC and GaN power switching devices is reviewed. The experimental performance of various rectifiers and transistors, which have been demonstrated, is discussed. Material and processing challenges and reliability concerns on SiC and GaN power devices are also described. The future trends in device development and commercialization are pointed out. 相似文献
18.
随着器件工作频率的升高,以集总元件模型描述大栅宽功率器件引入的误差将越来越大,且这一趋势随着栅长的减小更加显著。对微波大栅宽功率器件的分布性作了初步研究,对传统建模和器件优化方法进行改进,将器件中的有源部分和无源部分分离开,利用微波传输线理论和奇偶模分析对器件的无源部分建模,在满足集总条件时对有源区建模,将两者综合建立了分段的线性模型。与测量结果进行了比较,表明分段模型取得了更为精确的结果;在此基础上又建立了分段的非线性模型,模拟和验证了大栅宽器件的早期非线性现象;最后还提出了功率器件栅宽优化设计的估算方法。 相似文献
19.
20.
提出了求解非线性散射介质内辐射传递的积分矩方法.将辐射传递方程中散射相函数的积分项转化为辐射强度各阶矩的线性组合.散射相函数为勒让德多项式展开形式,辐射强度矩的最高阶数与散射相函数的展开项数相同.将原本复杂的积分微分方程转化为微分方程,通过积分法求解此方程.积分矩方法不需要对立体角进行离散,不会引起射线效应.积分矩方法... 相似文献