Optimization of porous silicon reflectance for silicon photovoltaic cells

The antireflection properties of electrochemically formed porous silicon (PS) layers in the 0.3 μm thick n⁺ emitter of Si p–n⁺ junctions, have been optimized for application to commercial silicon photovoltaic cells. The porosity and thickness of the PS layers are easily adjusted by controlling the electrochemical formation conditions (current density and anodization time). The appropriate PS formation conditions were determined by carrying out a two steps experiment. A first set of samples allowed to determine the optimal porosity and a second one to adjust the thickness of the PS layers, by evaluating the interference features of the reflectance produced by the layers. A PS layer with optimal antireflection coating (ARC) characteristics was obtained in 30% HF in only 3.5 s. The effective reflectance is reduced to 7.3% between 400 and 1150 nm which leads to a gain of up to 33% in the theoretical short circuit current of a p–n⁺ shallow junction compared to a reference junction without a PS layer. The effective reflectance with optimized PS layers is significantly less than that obtained with a classical TiO₂ ARC on a NaOH pretextured multicrystalline surface (11%).     

Formation and characterization of porous silicon layers for application in multicrystalline silicon solar cells

The electrochemical formation of porous silicon (PS) layers in the n⁺ emitter of silicon p–n⁺ homojunctions for solar energy conversion has been investigated. During the electrochemical process under constant polarization, a variation of the current density occurs. This effect is explained by considering the doping impurity gradient in the emitter and by TEM characterization of the PS layer structure. Optical transmission measurements indicate that modifications of the refractive index and absorption coefficient of PS are mainly related to the porosity value. Reflectivity measurements, spectral response and I–V characteristics show that PS acts as an efficient antireflection coating layer. However, beyond a critical layer thickness, i.e. when PS reaches the p–n⁺ interface, the junction properties are degraded.     

Self-aligned locally diffused emitter (SALDE) silicon solar cell

This paper presents, for the first time, a low-cost, high-throughput manufacturing approach for fabricating n-base dendritic web silicon solar cells with selectively doped emitters and self-aligned aluminum contacts using rapid thermal processing (RTP) and screen printing. The self-aligned locally diffused emitter (SALDE) structure is p⁺ nn⁺⁺ where aluminum is screen-printed on a boron-doped emitter and fired in a belt furnace to form a deep self-doped p⁺-layer and a self-aligned positive contact to the emitter according to the well-known aluminum-silicon (Al---Si) alloying process. The SALDE structure preserves the shallow emitter (20.2 μm) everywhere except directly beneath the emitter contact. There the junction depth is greater than 5 μm, as desired, in order to shield carriers in the bulk silicon from that part of the silicon surface covered by metal where the recombination rate is high. This structure is realized by using n-base (rather than p-base) substrates and by utilizing screen-printed aluminum (rather than silver) emitter contacts. Prototype dendritic web silicon (web) cells (25 cm² area) with efficiencies up to 13.2% have been produced.     

Determination of front surface recombination velocity of silicon solar cells using the short-wavelength spectral response

A method of determination of recombination velocity S_f of minority carriers at the front surface of an n⁺–p–p⁺(p⁺–n–n⁺) silicon solar cell in which the n⁺(p⁺) front emitter is made by diffusion of dopant impurity in the p(n) region is presented. This method uses the short-wavelength spectral response of the cell to determine S_f and is applicable if the front emitter of the cell has a linearly varying built-in field. It was applied to a p⁺–n–n⁺ solar cell that had a Gaussian distribution of the dopant impurity in the p⁺ front emitter up to a depth of 0.078 μm from the surface. Using the spectral response data of cell in 380 nm<λ< 500 nm range S_f was found to have a nearly constant value 6×10⁵ cm s⁻¹ in 400 nm<λ<460 nm range. Below and above this wavelength range the value of S_f was found to be slightly smaller. For comparison the value of S_f was also determined assuming the p⁺ region to be uniformly doped, and this value was found to be significantly smaller than based on the diffused emitter model. The analysis showed that for a diffused junction cell, the assumption that the front emitter is uniformly doped, ignores the presence of the built-in field in the emitter region and leads to overestimation of minority carrier recombination in the emitter. Consequently for a given contribution of the front emitter region to the spectral response of the cell, this assumption underestimates the front surface recombination and determines a smaller value of S_f. On the other hand, the present method can be expected to determine a realistic value of S_f independent of λ for most diffused junction silicon solar cells using the spectral response data in a suitable short-wavelength range since each such cell indeed has a built-in electric field in the emitter region.     

Double porous silicon layer on multi-crystalline Si for photovoltaic application

Double porous silicon (d-PS) layers formed by acid chemical etching on a top surface of n⁺/p multi-crystalline silicon solar cells were investigated with the aim to improve the performance of standard screen-printed silicon solar cells. First a macro-porous layer is formed on mc-Si. The role of this layer is texturization of surface. Next, the cells have been manufactured using standard technology based on screen-printing metallization. Finally, a second mezo-porous layer in n⁺ emitter of cell has been produced. The role of this PS layer is to serve as an antireflection coating. In this way, we have obtained d-PS layers on these solar cells. The paper present observation of d-PS microstructure with SEM as well as measurements of its effective reflectance at the level of 2.5% in the 400–1000 nm length wave range. The efficiency of the solar cells with this structure is about 12%.     

Aluminum alloy back p–n junction dendritic web silicon solar cell

A new silicon solar cell structure is presented in which the p–n junction is formed by alloying aluminum with n-type silicon, and where this p–n junction is located at the back (unilluminated) side of the cell. With a phosphorus front diffusion, the resultant n⁺np⁺ structure has been implemented using dendritic web silicon substrates which are 100 μm thick and doped with antimony to 20 Ω cm. Such a structure eliminates shunting of the p–n junction, provides an effective front surface field, enables a high minority carrier lifetime in the base, and is immune to light-induced degradation. Using only production-worthy, high-throughput processes, aluminum alloy back junction dendritic web cells have been fabricated with efficiencies up to 14.2% and with corresponding minority carrier (hole) lifetime in the base of 115 μs.     

Improvement of multicrystalline silicon solar cell performance via chemical vapor etching method-based porous silicon nanostructures

In this paper, we report on the effect of chemical vapor etching-based porous silicon (PS) on the performance of multicrystalline silicon solar cells performed via deep n⁺/p junction-type structures. Chemical vapor etching of silicon leads to the formation of porous silicon (PS) nanostructures that dramatically decrease the surface reflectivity from 30% to about 8%, and increase the minority carrier diffusion lengths from 90 μm to 170 μm. As a result, the short-circuit current density was improved by more than 20% and the fill factor (FF) by about a 10%. An enhancement of the photovoltaic conversion energy efficiency of the solar cells from 7% to 10% was observed. This low-cost PS formation process can be applied in the photovoltaic cell technology as a standard procedure.     

Aluminium BSF in silicon solar cells

The purpose of this work is to develop a back surface field (BSF) for industrial crystalline silicon solar cells and thin-film solar cells applications. Screen-printed and sputtered BSFs have been realised on structures which already have a n⁺p back junction due to the diffusion of the phosphorus in both faces of the wafer during solar cell emitter elaboration. Rapid thermal annealing temperatures from 700°C to 1000°C have been used. Thickness of the BSF has been measured by SIMS and confronted to the theoretical expected value and simulations. Electrical and optical measurements have been done in order to characterise the BSF. For 250 μm thick industrial solar cells, 6% relative increase in photocurrent has been reached.     

Analysis of thin silicon solar cells for high efficiency

A comprehensive theoretical analysis taking into account the contribution from both the emitter and base regions having finite surface recombination velocity has been developed for computing short-circuit current, open-circuit voltage, and efficiency of thin AR coated thin silicon solar cells with textured front surface. The dependence of efficiency on the front surface and back surface recombination velocities and on the cell parameters have been investigated in details for varying cell thickness considering the effects of bandgap narrowing and Auger recombination in the material. It is shown that efficiency exceeding 24% can be attained with silicon solar cells having thickness as low as 25 μm provided both front and back surfaces are well passivated (S < 10³cm/s) and the doping concentration in the base and emitter are in the range of 5 × 10¹⁶ to 10¹⁷cm⁻³ and 10¹⁸ to 5 × 10¹⁸cm⁻³, respectively. It is also shown that an efficiency of about 23% can be obtained for thin cells of 25 μm thickness with a much inferior quality materials having diffusion length of about 40 μm.     

Mechanism for the anomalous degradation of proton- or electron-irradiated silicon solar cells

A mechanism of the anomalous increase of the short-circuit current of n⁺–p–p⁺ silicon space solar cells under high fluence of the high-energy 10 MeV protons or 1 Mev electrons is proposed. In distinction to other models this mechanism takes place as a result of the conversion of conductivity type and increased minority carrier lifetime with respect to that of majority carriers. This mechanism occurs in solar cells with deep centers, whose energy level is close to the middle of the band gap.     

Effect of the front surface field on crystalline silicon solar cell efficiency

The present paper reports on a simulation study carried out to determine and optimize the effect of the high–low junction emitter (n⁺-n) on thin silicon solar cell performance. The optimum conditions for the thickness and doping level of the front surface layer with a Gaussian profile were optimized using analytical solutions for a one dimensional model that takes on the theory relevant for highly doped regions into account. The photovoltaic parameters of silicon solar cells with front surface field layer (n⁺-n-p structure) and those of the conventional one (n-p structure) are compared. The results indicate that the most important role played by the front surface field layer is to enhance the collection of light-generated free carriers, which improves the efficiency of the short wavelength quantum. This is achieved by a drastic reduction in the effective recombination at the emitter upper boundary, a property primarily responsible for the decrease in the emitter dark current density. The findings also indicate that the solar cell maximum efficiency increase by about 2.38% when the surface doping level of the n⁺-region and its thickness are equal to 2.10²⁰ cm^?3 and 0.07 μm, respectively.     

Lifetime analysis of silicon solar cells by microwave reflection

Microwave photoconductive decay (μPCD) has become a standard technique for measuring the carrier lifetime of silicon used in solar cells. Here, we have used μPCD to examine the carrier lifetimes at common doping levels used in the base region of silicon photovoltaic devices. For the conductivity range used in the p-type base of n⁺–p structures, the microwave penetration depth is less than the wafer thickness. In this case, the reflectance–conductivity relationship is very nonlinear. We will show that quasi-steady-state photoconductivity (QSSPC) and resonance-coupled photoconductive decay (RCPCD) lifetime measurements track over a wide range of injection level, and generally agree at higher injection levels. Our μPCD data will be compared with the transient RCPCD data over the same range. The data from the latter agree at low-injection levels, but show serious disagreement at higher injection levels. The conclusion is that μPCD must be limited to low-injection levels in the doping range used for solar cells.     

n–p Junction formation in p-type silicon by hydrogen ion implantation

Hydrogen ion implantations at an energy of 250 keV and a dose of 3×10¹⁶ cm⁻² were applied to float zone, Czochralski grown silicon wafers and to multicrystalline samples. It was found that after annealing at 350°C<T<550°C for 1 h a n–p junction is formed and a photovoltaic behaviour is observed. Spectral responses show that the photocurrent in the near infrared part of the spectrum is comparable to that given by a standard silicon solar cell. The depth of the junction is about 2 μm and C–V measurements show that the junction is graduated. Hydrogen plasma immersion leads to similar results. The conversion of p- to n-type silicon is explained by the formation of shallow donor levels associated to a high concentration of hydrogen.     

Polycrystalline silicon solar cells on low cost foreign substrates

The use of polycrystalline silicon layers on low-cost substrates is a promising approach for the fabrication of low-cost solar cells. Using low-carbon steel and graphite as substrates, solar cell structures have been deposited by the thermal decomposition of silane and appropriate dopants.Steel was selected as a substrate on the sole basis of its low cost. However, steel and silicon are not compatible in their properties, and an interlayer of a diffusion barrier, such as borosilicate, must be used to minimize the diffusion of iron from the substrate into the deposit. The deposited silicon on borosilicate/steel substrates is polycrystalline with a grain size of 1–5 μm, depending on deposition conditions. P-n junction solar cells were found to have low open-circuit voltages and poor current-voltage characteristics, and Schottky-barrier solar cells were found to show negligible photovoltages.Graphite is more compatible with silicon in properties than steel, and silicon deposited on graphite substrates shows considerably better microstructures. A number of solar cells, 2·5×2·5 cm in area, have been fabricated from n⁺-silicon/p-silicon/p⁺-silicon/graphite structures. The best cell to date had a V_oc of 0·35 V and an AMO efficiency of 1·5% (no antireflection coating). This type of solar cell is very promising because of the simplicity in fabrication.     

A new model of very high efficiency buried emitter silicon solar cell

In this work, we report a new model of symmetrical silicon solar structure where the emitter is buried, thus, creating many depletion regions in series inside the cell. The photocurrent in this model is computed for AM0 solar spectrum and is compared to the classical p-n junction. The first results of the calculation show that the buried emitter solar cell (BESC) has 10–35% more short-circuit current than the classical cell depending on the surface recombination velocity S. The biggest difference is obtained for S = 10⁵cm/s. The ratio of the photocurrent in the BESC to the classical photocurrent as a function of the absorption coefficient a goes from 1.9 for small α to 6.5 times for α = 10⁷cm⁻¹ with a minimum of 1.1 for α around 1800 cm⁻¹ for S = 10⁵cm/s.     

Effect of spatial variation of incident radiation on spectral response of a large area silicon solar cell and the cell parameters determined from it

Effect of spatial variation of incident monochromatic light on spectral response of an n⁺–p–p⁺ silicon solar cell and determination of diffusion length of minority carriers (L_b) in the base region and the thickness of the apparent dead layer (x_d) in the n⁺ emitter from the spectral response have been investigated. Spectral response of a few 10 cm diameter and 10×10 cm² pseudo-square silicon solar cells was measured with the help of a standard silicon solar cell of 2×2 cm² area in 400–1100 nm wavelength range. Different areas (4, 9, 16, 25 and total area 78.6 or 96 cm²) were exposed. The effect of the radial variation of incident radiation was determined quantitatively by defining a parameter f₁ as the ratio of the average intensity falling on the reference cell to that on the exposed area of the test cell. The value of f₁ varied between 1 and 1.15 (1.25) as the exposed area of the cell varied from 4 cm² to 78.6 (96) cm² indicating that the spatial inhomogeneity of intensity increased with the increase in the exposed cell area. Short-circuit current densities, J_sc, computed from spectral response data for AM1.5 spectrum were less compared to the directly measured values by a factor which was nearly equal to f₁. However, radial variation of intensity does not affect the determination of diffusion length of minority carriers in the base region (by the long wavelength spectral response, LWSR method using the measured spectral response data in 0.85<λ<1.05 μm range) and the thickness of the dead layer (by the method of Singh et al. using the data of 0.45<λ<0.65 μm range) significantly.     

The influence of porous silicon on junction formation in silicon solar cells

In this work the results of a structural investigation by SEM of porous silicon (PS) before and after diffusion processes are reported. The formation of PS n⁺/p structures were carried out on PS p/p silicon wafers with two methods: from POCl₃ in a conventional furnace and from a phosphorous doped paste in an infrared furnace. Sheet resistance was found to be a strong function of PS structure. Further details on sheet resistance distribution are reported. The electrical contacts in prepared solar cells were obtained by screen printing process, with a Du Ponte photovoltaic silver paste for front contacts and home-prepared silver with 3% aluminium paste for the back ones. Metallization was done in the infrared furnace. Solar cell current–voltage characteristics were measured under an AM 1.5 global spectrum sun simulator. The average results for multi-crystalline silicon solar cells without antireflection coating are: I_sc=720 (mA), V_oc=560 (mV), FF=69%, Eff=10.6% (area 25 cm²).     

Large-area high efficiency single crystalline silicon solar cells

This paper reports on a 100 cm² single crystalline silicon solar cell with a conversion efficiency of 19.44% (J_sc = 37.65 mA/cm², V_oc = 638 mV, FF = 0.809). The cell structure is as simple as only applying the textured surface, oxide passivation, and back surface field by the screen printing method. The comparison between cell performances of the CZ (Czochralski) and FZ (Floating zone) silicon substrates was investigated. The higher efficiency cells were obtained for the FZ substrate rather than the CZ substrate. The influence of the phosphorus concentration of the emitter on the cell efficiency has also been investigated. A good result was obtained when the surface concentration of phosphorus was 3 × 10²⁰ cm⁻³ and the junction depth was about 0.6 μm.     

Device simulation and modeling of microcrystalline silicon solar cells

Device modeling for p–i–n junction basis thin film microcrystalline Si solar cells has been examined with a simple model of columnar grain structure utilizing two-dimensional device simulator. The simulation results of solar cell characteristics show that open-circuit voltage (V_oc) and fill factor considerably depend on structural parameters such as grain size and acceptor doping in intrinsic layer, while short-circuit current density (J_sc) is comparatively stable by built-in electric field in the i-layer. It is also found that conversion efficiency of more than 16% could be expected with 1 μm grain size and well-passivated condition with 10 μm thick i-layer and optical confinement.     

Porous silicon as an intermediate layer for thin-film solar cell

The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of % allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate. A 3.5 μm thin-film cell with reasonable efficiency is realized using such a PS intermediate layer.