New low-noise output amplifier for high-definition CCD image sensor

A new low-noise charge-coupled-device (CCD) output amplifier, the RJG detector, has been developed. The RJG detector incorporates a JFET which has an electrically floating ring-junction gate (RJG). The operating principle of the amplifier is that signal charges, transferred from the CCD into the RJG, directly modulate the drain current in the detection JFET. The performance of the detector was evaluated by operating test devices under a 37-MHz clock frequency, which is the same frequency as that for the horizontal CCD operation in the recently developed 2-million-pixel high-definition CCD image sensor. It was found that 1/f noise was reduced by introducing the JFET and that reset noise was completely eliminated by achieving complete charge transfer through the reset operation. As a result, input referred noise equivalent electrons within the 18.5-MHz baseband were reduced to 17 (electrons)     

线阵CCD图像传感器驱动电路的设计

随着CCD性能的不断提高,CCD技术在军、民用领域都得到了广泛的应用.介绍了TCD1501C线阵CCD的驱动电路设计,详细介绍了用VHDL完成的CCD图像传感器驱动时序设计和视频输出差分信号驱动电路的设计.     

高帧速CCD摄像器件的设计

设计了光敏元尺寸１８μｍ×１８μｍ５１２（Ｈ）×５１２（Ｖ）光纤面板耦合ＣＣＤ高帧速摄像器件,帧速为５００帧／ｓ。详细讨论器件多相加压（ＭＰＰ）和常规工作模式的设计,给出了器件设计性能参数。该器件采用２μｍ,双层多晶硅和双层金属工艺制作。     

基于CCD图像传感器的加热炉温度测量的研究

为了实现对加热炉温度的采集与测量,有效控制炉内物料或工件的加热过程,采用CCD图像传感器结合PC机监控炉内温度。根据比色测温原理,通过MATLAB编程实现像点与温度对应的算法关系,计算出采集得到的图片中各点的温度值及区域的场温度值,由于所得的温度值与实际温度值有较大偏差,编程实现了对温度的校正。实验结果显示,测得的温度与实际温度的绝对误差基本小于10℃,相对误差小于1%,表明系统具有在线实时、精度高、可靠性好等优点。     

全帧CCD时序驱动电路的设计

在了解国外先进科学级CCD相机的基础上,自主研发一种适合在工业无损检测中使用的相机。做的主要工作是设计和开发了一种面阵CCD驱动电路,介绍了全帧型面阵CCD光电传感器的成像原理、芯片结构、驱动时序的要求。通过分析各个引脚的关系,把用硬件描述语言（VHDL）编写的驱动程序,烧到FPGA芯片EP2C5Q208C8中。仿真结果及其用逻辑分析仪测得的实验结果表明该方法完全满足CCD芯片的要求。该方法能提供多路驱动时序,驱动频率高,硬件电路简单,编程方便,具有较好的性价比和应用推广价值。     

CCD低噪声读出电路设计

以红外增强型图像传感器TH7888A所得的微弱电压信号为输入,对图像传感器的模拟前端处理电路进行设计。采用巴特沃斯低通滤波器和全差分双相关采样的方法,提高整体电路的信噪比为67 dB,从而减少了后续电路的输入噪声。使用Proteus对所设计的低噪声、高增益放大电路的功能和噪声分析等特性进行全面的实验。实验结果表明,该设计能有效放大微弱电压信号,并可以对放大的电压信号进行准确的相关双采样去除KTC噪声、复位噪声。最后,在实际应用中,使用FPGA为硬件设计载体,以vivado作为软件开发环境,使用Verilog语言对时序发生器进行了硬件描述。FPGA生成的模拟信号分别作为读出电路的输入和采样的触发信号,并验证了其正确性和可行性。     

基于CCD图像传感器的路径识别算法分析

随着汽车工业的发展,汽车智能化成为大势所趋。智能汽车(IV,Intelligent Vehicle)是一种集环境感知、规划决策、多等级辅助驾驶等功能于一体的综合系统,它集中地运用了计算机技术、人工智能与自动控制技术、现代传感器技术、信息与通信等技术,是典型的高新技术的综合体。文中以第六届全国大学生"飞思卡尔"杯智能汽车为背景,探讨了基于CCD图像传感器的图像跟踪算法。     

An infrared-bi-color Schottky-barrier CCD image sensor for precisethermal images

An infrared-bi-color image sensor was developed with a barrier height controlled Schottky-barrier photo diode array for precise temperature images. Low and high barrier height diode pixels are arranged vertically next to one another using a selective area ion implantation technique. Conventional monochrome infrared image sensors frequently give wrong temperature images due to an unreasonable emissivity assumption. The infrared-bi-color image sensor can obtain the temperature image precisely with regard to the emissivity of the object     

A meander channel CCD linear image sensor

A new type of 1024-element linear image sensor has been developed using a CCD with a meander channel (MCCD). Its simple electrode pattern with no contact windows for clocking promises high yield in the production.     

A transparent electrode CCD image sensor for a reading aid for the blind

A detailed investigation of CCD's for application in the optacon reading aid for the blind has been completed. The results of the investigation include an analysis of the performance of the transparent electrode structure and the CCD scanning circuitry used to realize the new type of image sensor.     

Performance improvement of CCD image sensor arrays

In conventional arrays, charges are read out from photodiodes through vertically placed charge-coupled registers. In an array presented here, reading out is performed through vertical diffusion lines. As shown, such an array is more sensitive, since the photodiodes occupy a larger space. Also, this array shows a reduced level of cross-coupling, because extra charges leave the photodiodes, and a reduced level of intrinsic back-ground, because charges generated exterior to the photodiodes are removed.     

CCD image sensor with compensated reset operation

A low voltage charge coupled device (CCD) image sensor has been developed by adjusting the electron potential barrier in the electron sensing structure. A charge injection to the gate dielectrics of a MOS transistor was utilized to optimize the electron potential level in the output structure. A DC bias generating circuit was added to the reset structure which sets reference voltage and holds the signal charge to be detected. The generated DC bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2 V to 5.5 V, which is suitable for compensating the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole–Frenkel conduction and Fowler–Nordheim conduction. A CCD image sensor with 492(H) × 510(V) pixels adopting this structure showed complete reset operation with the driving voltage of 3.0 V. The image taken with the image sensor utilizing this structure was not saturated to the illumination of 30 lux, that is, showed no image distortion.     

CCD图像传感器的高分辨率技术

评价了 Ｃ Ｃ Ｄ 图像传感器与电子束摄像管的性能。分析了高分辨率 Ｃ Ｃ Ｄ 像感器的技术难点。阐述了解决这些问题的技术措施：双 Ｈ－ Ｃ Ｃ Ｄ 移位寄存器、 Ｓ Ｒ Ｄ 法、 Ｃ Ｃ Ｓ 法及微透镜技术等。给出了三种新器件的技术指标,并与常规方法构成的器件进行了比较     

An mK×nK bouwblok CCD image sensor family. I. Design

This paper presents a bouwblok family of CCD image sensors, a set of devices of varying size built with a single pixel design from one mask set. It describes the original design goals and how they led to dividing the layout into smaller blocks that could be stitched together to form a complete sensor. The architecture is traditional for large-area scientific devices. The pixel design is optimized for large charge packets, antiblooming and low dark current, the horizontal register for binning, and the output amplifier for fast pixel rates. The paper describes how the design is split and modified to cover all possible configurations and how to minimize the effects of stitching     

Interline CCD image sensor with an antiblooming structure

A ⅔-in 384 (H) × 490 (V) element interline CCD image sensor with a new antiblooming structure was developed. Blooming was suppressed without sacrificing photosensitivity and dynamic range by means of a vertical overflow drain positioned under (rather than beside) a photodiode. For 10-percent vertical height illumination the smear signal was reduced to 0.05 percent of the illumination signal. Well-balanced performance, namely, large dynamic range (72 dB), low random noise (65 rms noise electrons per charge packet), high-contrast transfer functions for horizontal and vertical directions, and a spectral response similar to the luminous efficiency curve were obtained under moderate operating conditions.     

Smear reduction in the interline CCD image sensor

An undesirable smear in a vertical-overflow-drain interline CCD image sensor (VOD IL-CCD) has been analyzed. This smear has been reduced by using a new structure. The main cause of the smear was identified, using an experimental linear CCD image sensor, as light leakage, i.e., oblique incident light effect, concave lens effect, diffraction effect, and waveguide effect, To reduce the light-leakage smear, a new structure is proposed, where the oxide thickness under the aluminum photoshield is as small as 0.2 µm. As a result, the photoshielding performance is improved, and the smear-to-signal ratio for 10-percent vertical height illumination in the new structure VOD IL-CCD obtained is 0.016 percent, or 12 times smaller than that in a conventional structure VOD IL-CCD.     

基于CMOS图像传感器的视频采集系统设计

提出了一种采用Altera公司CycloneⅡ系列的FPGA作为主控芯片,采用OV7670这款CMOS图像传感器作为视频信号源并采用sRAM（静态随机存储器）作为数据缓存的实用方案,实现了对图像传感器寄存器配置、图像传感器输出信号采集、图像数据格式转换、图像数据缓存及最终在VGA显示器上进行图像显示的一系列过程。该视频采集系统设计能够很好地满足实时图像的输出需求。     

128×128 element PtSi infrared CCD image sensor

A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill factor of 40 percent,the nonuniformity of 5% or less and the dynamic range of over or equal to 50 dB.The noise equivalent temperature difference is 0.2 K with f/1.0 optics at 300 K background. In this paper,the principle of operation,design consideration and fabrication technology for the device are described.     

CCD linear image sensor with buried overflow drain structure

A CCD linear image sensor with buried overflow drain structure has been developed. Since the overflow drain, i.e. a reverse biased n-region buried under photosites arrayed in p-layer, makes an effective sink of excess electrons, imaging characteristics such as uniformity of photosensitivity, spectral response, resolution, and antiblooming, are highly improved.     

Low voltage CCD image sensor with optimized reset operation

A charge coupled device (CCD) image sensor operating with 3.0 V-reset has been developed using a charge injection to the gate dielectrics of a MOS structure. A DC bias generating circuit was added to the reset structure, which sets reference voltage and holds the signal charge to be detected. The generated Dc bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2 to 5.5 V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole-Frenkel conduction and Fowler-Nordheim conduction. A CCD image sensor with 492(H)×510(V) pixels adopting this structure showed complete reset operation with the driving voltage of 3.0 V. The image taken with the image sensor utilizing this structure was not saturated to the illumination of 30 lux, that is, showed no image distortion.