量子点诱导高氮掺杂提高氧化石墨烯基超级电容器性能

使用氧化石墨烯量子点(GQD)嵌入氧化石墨烯(GO)层间,在NH₃氛围下采用光照辐射进行还原和氮掺杂,制备一种类“三明治”结构的超级电容器电极材料。光化学还原法可以在短时间内实现材料的还原和掺氮。氧化石墨烯量子点丰富的边缘活性位点使氮的原子数分数高达18.19%,大幅提高了材料的湿润性和电导率。同时量子点嵌入氧化石墨烯层间,可以有效防止氧化石墨烯片的堆叠,增加材料中离子通道数量。制备的两电极超级电容器在0.3 A/g电流密度下的比容量高达380 F/g,电极充放电循环2 000次以后,电容量仍然保持初始电容量的86%。这种富氮石墨烯在新型储能系统中具有潜在的应用前景。     

碳点修饰石墨毡电极在ZnI_2溶液中的电化学性能

通过溶剂热法在石墨毡(GF)上制备碳点(CD),将其作为电极,在碘化锌(ZnI_2)电解液中测量其电化学性能,研究其作为ZnI_2储能器件的电极对储能器件性能的影响。主要通过不同制备时间的溶剂热法制备碳点,研究不同的制备时间对碳点制备的影响。对碳点修饰的石墨毡进行快速热退火,研究退火对石墨毡电极性能的影响。通过场发射扫描电子显微镜(FE-SEM)、X射线衍射仪(XRD)和喇曼光谱对电极表面进行了表征。通过循环伏安曲线(CV)、电化学阻抗谱(EIS)和计时电位法研究其电化学性能。研究结果表明,通过9 h、180℃下溶剂热法制备的CD修饰GF具有最好的电化学性能。     

硝酸改性石墨毡制作超级电容器的复合电极

为了改善石墨毡(GF)表面的疏水性以及解决生长的活性物质易脱落的问题,研究了使用浓硝酸简单的一步法活化石墨毡并且引入含氧官能团.通过实验确定了合适的浓硝酸反应条件.经浓硝酸改性后的石墨毡的比电容可以达到272.6 mF·cm-2,而且,发现改性后的石墨毡(MGF)更有利于活性物质生长.与MGF结合后,用于超级电容器电极...     

碳点MnO2修饰碳布复合电极的电容性能

通过一种自下而上的高温裂解方法制成一种碳点(CD),并在此基础上以碳布(CC)为衬底合成了碳点修饰的二氧化锰(CD/MnO2)复合电极.对合成的CD/MnO2/CC进行表征分析,发现生成的CD/MnO2较均匀地生长在碳纤维上,高分辨率透射电子显微镜(HRTEM)下CD/MnO2呈分层纳米片状.对CD/MnO2/CC进行...     

石墨烯量子点光学非线性特性及其应用进展

石墨烯量子点(GQD)是碳量子点的一种,不仅具有碳量子点的优良性质,还具有其他量子点无法比拟的光学特性。概括了石墨烯量子点光学非线性原理特点,由于其二阶或三阶非线性电极化强度决定非线性光学的特性,并且其表面导电性呈各向同性,选择一种更加合理的方法来描述其光学非线性,由此论述得到其三阶电流的表现形式。随后,详细阐述了国内外对在光电领域、生物光子领域和催化领域中GQD的研究成果,简要分析了其性能参数、作用特点、潜在能力等,指出了GQD目前面临的关键技术问题,并对此从制备方案设计和优化作用机制等方面阐述了技术解决途径,最后对未来GQD的应用前景进行了展望。     

氧化镍/膨胀石墨复合物的合成及其电容性能

采用液相沉淀法制备了膨胀石墨(EG)质量分数为40%的氧化镍/膨胀石墨(NiO/EG)复合物,研究了该复合物电化学性能。结果表明:纳米NiO均匀分散在EG表面;导电性良好的EG显著提高了NiO的电化学性能。在6 mol.L–1 KOH电解液中,NiO/EG复合物电极的氧化和还原峰的电位差降低了0.141 V,100 mA.g–1电流密度下比容量可达到370 F.g–1,远高于纯NiO(约206 F.g–1)和纯EG的比容量(约25 F.g–1)。NiO/EG复合物在充放电500次后,比容量仅衰减了2.5%。     

基于石墨毡生长的镍钴基化合物电极的双功能电催化性能

以先水热后硫化的方法制备出基于石墨毡基底的镍钴基化合物(NiCo2O4/GF和NiCo2 S4/GF)电极,探究不同水热温度对电极的催化特性的影响.通过扫描电子显微镜(SEM)、能量色散X射线光谱仪(EDS)、X射线衍射仪(XRD)和X射线光电子能谱仪(XPS)对样品表面形貌、结构、晶向及元素分布进行分析.通过循环伏安...     

自组装NiO/还原氧化石墨烯复合材料及其超级电容性能研究

通过水热法制备得到α-Ni(OH)₂,在甲酰胺溶剂中,通过机械振荡结合超声对其进行剥离,得到厚度约为1.1 nm的Ni(OH)₂纳米片,与氧化石墨烯(GO)悬浮液混合后,静电自组装得到Ni(OH)₂/GO,经高温热处理获得NiO/还原氧化石墨烯(rGO)复合材料。同时研究了NiO/rGO的结构、形貌及其用作超级电容器电极材料的电化学性能。形貌表征显示NiO/rGO呈层-层形貌,N₂吸-脱附实验表明复合材料存在介孔结构。在KOH电解液中,1 A/g电流密度下NiO/rGO的比容量为1564 F/g,远高于初始Ni(OH)₂和单纯的NiO;组装的NiO/rGO//石墨烯水凝胶(GH)非对称超级电容器(ASC)器件,充放电电位窗口为0～1.6 V,10 A/g电流密度下经1000次充放电循环的比容量保持率达84.2%。     

三维多孔石墨烯的制备及其电化学性能研究

电极材料的孔径结构、尺寸、类型直接影响电极材料的电化学性能。文章利用水热反应与硝酸蒸汽处理两步法制备了三维多孔石墨烯材料,并通过控制硝酸蒸汽处理时间,研究其对电极材料电化学特性的影响。通过扫描电镜、透射电镜、拉曼光谱、X射线衍射等多种测试方法对得到的三维多孔石墨烯进行表征,并利用三电极测试方法,通过循环伏安、恒流充放电和电化学阻抗等电化学测试方法研究其电化学性能。结果表明,所制备的三维多孔石墨烯具有微孔与纳米孔相结合的三维结构,两者的协同作用使得三维多孔石墨烯表现出优异的电化学性能,在1A/g的电流密度下,比电容最高可达191.5F/g。     

石墨烯基超级电容器复合电极材料的研究进展

鉴于石墨烯基复合材料在超级电容器领域广阔的应用前景,综合国内外相关文献,同时结合所在课题组的研究成果,对石墨烯同金属氧化物、导电聚合物以及其他碳材料所形成的二元及三元复合材料的制备方法,及其用作超级电容器电极材料所表现出的优良性能等方面的研究进展进行了综述,最后对石墨烯基复合材料的未来发展方向进行了展望。     

Highly Brilliant Noniridescent Structural Colors Enabled by Graphene Nanosheets Containing Graphene Quantum Dots

The most important properties of noniridescent structural colors of amorphous photonic structures (APS) are sufficient color brightness and saturation, which are difficult to be optimized simultaneously. Herein, highly saturated and brilliant noniridescent structural colors are achieved by introducing graphene nanosheets, which contain a fraction of graphene quantum dots (GQDs), into the short‐range ordered APS. The effective modulation of the photoluminescence (PL) of GQDs by the selective enhancement of absorption at the blue pseudo photonic bandgap edges of the APS boosts the PL with wavelength matching that of the photonic bandgap and thus enables high structural color brightness; the uniform light absorption of graphene nanosheets in the whole visible spectra contributes to the high color saturation. Furthermore, by using APS films with short‐range order as templates, a brilliant colorful humidity sensor is demonstrated. Compared with the conventional sensing platform based on photonic crystals, the humidity sensor with brilliant noniridescent structural colors is more convenient by avoiding the confusing color dependence on the viewing angles. The improvement in the structural color brightness of the APS films by facile graphene doping will facilitate their practical applications in fields of decorations, packaging, pigments, sensors, displays, or other color‐related areas.     

Superior Micro‐Supercapacitors Based on Graphene Quantum Dots

Graphene quantum dots (GQDs) have attracted tremendous research interest due to the unique properties associated with both graphene and quantum dots. Here, a new application of GQDs as ideal electrode materials for supercapacitors is reported. To this end, a GQDs//GQDs symmetric micro‐supercapacitor is prepared using a simple electro‐deposition approach, and its electrochemical properties in aqueous electrolyte and ionic liquid electrolyte are systematically investigated. The results show that the as‐made GQDs micro‐supercapacitor has superior rate capability up to 1000 V s^?1, excellent power response with very short relaxation time constant (τ₀ = 103.6 μs in aqueous electrolyte and τ₀ = 53.8 μs in ionic liquid electrolyte), and excellent cycle stability. Additionally, another GQDs//MnO₂ asymmetric supercapacitor is also built using MnO₂ nanoneedles as the positive electrode and GQDs as the negative electrode in aqueous electrolyte. Its specific capacitance and energy density are both two times higher than those of GQDs//GQDs symmetric micro‐supercapacitor in the same electrolyte. The results presented here may pave the way for a new promising application of GQDs in micropower suppliers and microenergy storage devices.     

量子点中强耦合极化子的性质

采用线性组合算符和么正变换方法研究了抛物量子点中强耦合极化子基态的束缚能和电子周围的光学声子平均数。结果表明，极化子的基态的束缚能和电子周围的光学声子平均数随有效束缚强度增大而减小，随电子-声子耦合强度增大而增大。     

半导体量子点中强耦合激子的性质

研究了抛物型半导体量子点中强耦合激子的性质.在有效质量近似下,采用线性组合算符和幺正变换的方法,导出了半导体量子点中重空穴激子的基态能量.在强耦合情况下讨论了量子点半径和受限强度对半导体量子点中激子基态能量的影响.以氯化铊(TlCl)半导体为例进行了数值计算.结果表明:在强耦合情况下,重空穴激子的基态能量随量子点半径的增大而减小,随量子点受限强度的增大而增大.     

半导体量子点中强耦合激子的性质

研究了抛物型半导体量子点中强耦合激子的性质.在有效质量近似下,采用线性组合算符和幺正变换的方法,导出了半导体量子点中重空穴激子的基态能量.在强耦合情况下讨论了量子点半径和受限强度对半导体量子点中激子基态能量的影响.以氯化铊(TlCl)半导体为例进行了数值计算.结果表明:在强耦合情况下,重空穴激子的基态能量随量子点半径的增大而减小,随量子点受限强度的增大而增大.     

A Practical Guide to Prepare and Synthetically Modify Graphene Quantum Dots

Due to the favorable properties of graphene quantum dots (GQDs), there has been a rapid development of sensors, devices, and composite materials, which incorporate this 0D nanomaterial. GQDs provide a means to instill superior optical, electronic, mechanical, and adsorptive properties to various platforms and have found use as biosensors, photovoltaic devices, polymer composites, and drug delivery vehicles. One of the key factors to successfully integrating GQD technology is the intelligent choice of synthetic chemical pathways to fabricate, modify, and instill functionality in the developed platform. GQDs are decorated with a variety of functional groups that are amenable to traditional synthetic chemistry transformations; however, the technology for post‐synthetic modifications is only in its infancy. Herein, a comprehensive analysis of the chemistry available for modifying GQDs is provided; starting from methods for GQD fabrication and synthetic chemical pathways for producing functional GQDs, to the advantages, disadvantages, and challenges of specific chemistries, and finally techniques for the appropriate characterization of these functional materials. This review is meant for researchers considering entering the GQD field, as well as those more experienced, providing a practical guide on how to prepare, modify, and characterize GQDs for a broad range of applications.