Silicon-based light emitting diodes on silicon and glass substrates using a low temperature multilayered nanocrystalline structure

Si nanocrystals have been prepared by hydrogenation and subsequent annealing of as-deposited amorphous Si layers on glass and Si substrates. The hydrogenation process has been performed at 350 °C under radio frequency hydrogen plasma. The nanocrystallites were processed by sequential reactive ion etching to allow light emission. Photoluminescence (PL) measurements demonstrate that the nanocrystallites emit light in the range of 500-570 nm. The evolution of nanocrystals has been studied using scanning electron microscopy, while atomic force microscopy and transmission electron microscopy have been utilized to examine the structure of the Si nanocrystals. Multilayer luminescent Si nanocrystals have been fabricated using alternating layers of Si nanocrystals and Si oxy-nitride. Bilayer structures have higher efficiency than a single layer structure, while multilayers with three layers of luminescent nanocrystals and above did not show a higher PL intensity. Transparent light emitting diodes have been realized based on multilayer luminescent Si nanocrystals that displayed bright emission which was visible to the naked eye in a bright room.     

GaN-based light-emitting diodes prepared on vicinal sapphire substrates

Thin InGaN epitaxial layers and GaN-based light-emitting diodes (LEDs) on conventional and vicinal cut sapphire substrates are prepared. It is found that indium atoms are distributed much more uniformly in the samples prepared on vicinal cut sapphire substrates. It is also found that stronger electroluminescence intensity can be achieved without the band-filling effect of localised states from the LEDs with vicinal cut sapphire substrate. With 20 mA current injection, it is found that 44% electroluminescence intensity enhancement can be achieved by using the 1deg tilted sapphire substrate     

Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.     

High-efficiency, microscale GaN light-emitting diodes and their thermal properties on unusual substrates

A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ~1 mm × 1 mm to ~25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts.     

Thin-film silicon solar cell development on imprint-textured glass substrates

In this work, we report on the fabrication of microcrystalline thin-film silicon solar cells on textured glass substrates. The development of transparent and conductive front contacts for these solar cells is presented. State-of-the-art random textures for light-trapping were replicated into a glass-like resist on glass substrates with an imprint process. We applied an industrial relevant soft polymer mold that gives excellent replication accuracy. The necessity of applying thin front contacts for enhanced incoupling of the incident light is shown. An increased series resistance of these thin front contacts caused a decrease of the fill factor of the solar cells. One way to surpass this decrease in fill factor by reducing the solar cell width is demonstrated. In addition, the light-trapping and the light-incoupling for solar cells deposited on three different types of random textures were compared.     

High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks

In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO(2) nanomask by metal-organic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO(2) nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO(2) nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20 mA) compared with conventional LEDs.     

Traps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodes

We report the fabrication and investigations of organic light-emitting diodes (OLEDs) using a composite made by mixing poly[2-methoxy-5(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with CdSe/ZnS core/shell quantum dots (QDs). The electroluminescence efficiency of the studied devices was found to be improved as compared to devices using MEH-PPV. Moreover, the current density decreased with increasing QD concentration. We checked the effects of QDs on the electrical transport by determining the trap states, making use of the charge-based deep level transient spectroscopy (Q-DLTS) technique. The most striking result obtained is the decrease in trap density when adding QDs to the MEH-PPV polymer film. These results suggest that QDs would heal defects in nanocomposite-based devices and that CdSe/ZnS QDs prevent the trap center formation.     

High quality GaAs nanowires grown on glass substrates

We report for the first time the growth of GaAs nanowires directly on low-cost glass substrates using atmospheric pressure metal organic vapor phase epitaxy via a vapor-liquid-solid mechanism with gold as catalyst. Substrates used in this work were of float glass type typically seen in household window glasses. Growth of GaAs nanowires on glass were investigated for growth temperatures between 410 and 580 °C. Perfectly cylindrical nontapered nanowires with a growth rate of ~33 nm/s were observed at growth temperatures of 450 and 470 °C, whereas highly tapered pillar-like wires were observed at 580 °C. Nanowires grew horizontally on the glass surface at 410 °C with a tendency to grow in vertically from the substrate as the growth temperature was increased. X-ray diffraction and transmission electron microscopy revealed that the nanowires have a perfect zinc blende structure with no planar structural defects or stacking faults. Strong photoluminescence emission was observed both at low temperature and room temperature indicating a high optical quality of GaAs nanowires. Growth comparison on impurity free fused silica substrate suggests unintentional doping of the nanowires from the glass substrate.     

Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates

Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 °C and 650 °C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV–visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 °C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility.     

High performance of GaN-based flip-chip light-emitting diodes with hole-shape patterned ITO ohmic contact layer and AgIn reflector

The enhancement of light extraction efficiency is observed when the hole-shape patterned ITO ohmic contact layer and AgIn reflector is adopted in GaN-based flip-chip (FC) light emitting diodes (LEDs). ITO layer (140 nm) and AgIn (200 nm) was deposited on the top of p-GaN by in-line DC sputtering and electron beam evaporating system, respectively. The ITO ohmic contact layer showed a low specific contact resistance of 2.66 x 10(-5) Omega cm(-2) and high transmittance of >85% at visible spectral regions. The AgIn reflector exhibited a low specific contact resistance of 1.90 x 10(-5) Omega cm(-2) and high reflectance of approximately 84% at visible spectral regions. Comparing with unpatterned ITO/AgIn layer, the optical output power of GaN-based FC LEDs improves approximately 30% by the adoption of micro size hole-shape patterned ITO ohmic contact layer and AgIn reflector.     

Enhanced performance of organic light-emitting diodes by inserting wide-energy-gap interlayer between hole-transport layer and light-emitting layer

We demonstrated that driving voltages, external quantum efficiencies, and power conversion efficiencies of organic light-emitting diodes (OLEDs) are improved by inserting a wide-energy-gap interlayer of (4,4′-N,N′-dicarbazole)biphenyl (CBP) between a hole-transport layer of N,N-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine (α-NPD) and a light-emitting layer of tris(8-hydroxyquinoline)aluminum. By optimization of CBP thicknesses, the device with a 3-nm-thick CBP layer had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. We attributed these improvements to enhancement of a carrier recombination efficiency and suppression of exciton–polaron annihilation. Moreover, we found that the degradation of the OLEDs is caused by decomposition of CBP molecules and excited-state α-NPD molecules.     

以聚芴为主体的高效红光磷光聚合物发光二极管

以笼型多面体硅氧烷(poss)封端的聚烷基芴PFO-poss和PVK为主体,红光磷光络合物Ir(piq)为客体制作了不同结构的器件,最终在以PFO-poss为主体的双层结构器件当中获得了5.48cd/A的电致发光效率,超过了以PVK为主体的器件效率水平.研究了以PFO-poss为主体的器件中PVK的作用,发现作为空穴传...     

Highly efficient blue light-emitting diodes based on diarylanthracene/triphenylsilane compounds

New host materials have been designed and synthesized, (4-(10-(naphthalen-2-yl)anthracen-9-yl)phenyl)triphenylsilane (ANPTPS) and (9,9-dimethyl-7-(10-(naphthalen-2-yl)anthracen-9-yl)-9H-fluoren-2-yl)triphenylsilane (ANFTPS), and photophysical characteristics investigated to determine suitability as candidates for blue light-emitting materials. To explore the electroluminescent properties, multilayered OLEDs were fabricated with the device structure of ITO/NPB/Host (ANPTPS and ANFTPS): 8% Dopant (PFVtPh and PCVtPh)/Bphen/Liq/Al. By using a host (ANPTPS) and a dopant (PFVtPh) as the emitting layer, high-efficiency blue OLEDs were fabricated with a maximum luminance of 3991 cd/cm2 at 8.0 V, a luminous efficiency of 5.99 cd/A at 20 mA/cm2, a power efficiency of 3.11 lm/W at 20 mA/cm2, an external quantum efficiency of 4.13% at 20 mA/cm2, and CIEx, y coordinates of (x = 0.15, y = 0.18) at 8.0 V.     

High efficiency phosphorescent blue organic light-emitting diodes using double emitting layer

We have demonstrated a highly efficient blue phosphorescent organic light emitting diodes (PHOLED) using iridium (111) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate doped in double emitting layers (D-EML), N,N-dicarbazolyl-3,5-benzene (mCP) and p-bis (triphenylsilyly)benzene (UGH2). D-EML layers were employed to broaden the exciton formation zone and confine excitons. The optimized blue PHOLEDs having mCP/UGH2 as D-EML with a thickness of 200/100 A, exhibited a peak external quantum efficiency of 11.44%, power efficiency of 16.8 Im/W, luminous efficiency of 23.14 cd/A, and Commission Internationale de l'Eclairage coordinates of (0.17, 0.33).     

Ultraviolet electroluminescence from ZnO/polymer heterojunction light-emitting diodes

We report ultraviolet electroluminescence at 390 nm from diode structures consisting of electrodeposited ZnO nanorods sandwiched between a transparent SnO(2) film and a p-type conducting polymer. The nanorods are embedded in an insulating polystyrene layer. ZnO deposition occurs at 90 degrees C and produces vertically oriented nanorods with very high uniformity over areas of approximately 20 cm(2). Electron diffraction shows the nanorods to be single crystalline wurtzite ZnO. As-grown films show a broad electroluminescence band over the visible spectrum. Annealing at moderate temperatures (T = 300 degrees C) increases the emission and strongly raises the excitonic contribution. Optimally processed films show a narrow ultraviolet electroluminescence line at approximately 390 nm.     

Hole transport materials with high glass transition temperatures for highly stable organic light-emitting diodes

Two hole transport materials with high glass transition temperatures (T_g ~ 200 °C) have been synthesized by replacing the phenyl groups of 4,4′-bis[N-(1-naphthyl-1)-N′-phenyl-amino]-biphenyl (α-NPD) with the bulkier phenanthrene (N,N′-di(naphthalene-1-yl)-N,N′-di(phenanthrene-9-yl)biphenyl-4,4′-diamine, NPhenD) or anthracene (N,N′-di(anthracene-9-yl)-N,N′-di(naphthalene-1-yl)biphenyl-4,4′-diamine, NAD). The organic light-emitting diodes (OLEDs) using these hole transport materials exhibited stable operation at high temperatures up to 420 K, improved device lifetimes, and reduced operating voltage changes compared to the conventional hole transport materials owing to their high T_g. Although NAD has quite small bandgap as a hole transport material, superior thermal properties of NPhenD and NAD suggest that they can be promising materials for highly stable and high temperature-durable OLEDs and other organic optoelectronic devices.     

Light extraction from organic light emitting diodes using chemically etched glass substrates

We have manufactured highly efficient OLED devices fabricated on chemically etched glass substrates. The external quantum efficiency of the OLED devices with the etched glass substrates was increased by 5-27% in comparison with the reference flat glass substrate. Surface morphology, such as indented patterns, significantly affected the external luminance efficiency. A clean surface and the presence of smooth bent edges of indented patterns were found to be important for improving the external luminous efficacy.     

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.