移动IP技术与应用前景研究

深入分析了移动IPv4和移动IPv6的技术现状．指出移动IPv4存在的问题和移动IPv6的主要优势．探讨了移动IPv6的应用前景．并进一步说明在移动IP技术发展中需要继续关注的问题。     

浅析移动IPv6的基本原理及其扩展技术

移动通信和因特网的发展带给我们新机遇和新业务的同时,也带来了新的技术难题,传统的TCP/IP协议不支持主机的移动。移动IP技术正是为解决此问题而产生的一种新技术。本文首先了解了移动IPv4的功能实体和工作原理,介绍了移动IPv6操作原理并将其与移动IPv4比较。最后介绍了针对移动IPv6存在的问题而提出的三种扩展技术。     

移动网络中的移动IP问题探讨

介绍移动IP的实现方案及其规范 ,以及移动IP与传统IP之间的主要区别。讨论了移动IPv4技术的基本工作原理及代理发现、注册、隧道技术和路由选择等 ,介绍移动IPv6中出现的技术新特点 ,探讨现有移动IP存在的问题及其前景的展望     

移动网络中的移动IP问题综述

介绍移动IP的实现方案及其规范，以及移动IP与传统IP之间的主要区别。讨论了移动IPv4技术的基本工作原理及代理发现、注册、隧道技术和路由选择等，介绍移动IPv6中出现的技术新特点，探讨现有移动IP存在的问题及其前景的展望。     

移动互联网的关键技术──IPv6

移动互联网是因特网发展的一种趋势。IPv4已不能满足互联网发展的需要,而新一代的IPv6为移动互联网提供了保障。本文在分析了移动IP的基本原理后,具体论述了IPv6对移动性的支持,并通过与IPv4的比较,突出IPv6的特点和优势。     

移动互联网的关键技术——IPv6

移动互联网是因特网发展的一种趋势。IPv4已不能满足互联网发展的需要，而新一代的IPv6为移动互联网提供了故障。本在分析了移动IP的基本原理后，具体论述了IPv6对移动性的支持。并通过与IPv4的比较，突出IPv6的特点和优势。     

移动IPv6与移动IPv4的技术优势比较

IPv4在设计之初并没有考虑到终端设备的移动性,所以连网设备移动时需要从互联网上断开,而在另外一个地方重新连接时,还需要重新配置系统的新的IP地址、正确的子网掩码和新的默认路由器(网关)才能继续通信。为了支持互联网上的移动设备,IETF推出了移动IP 的标准来使用户保留不变的永久IP地址,而不管他们是否连接在网上。移动IP有两种:一种是基于IPv4的移动IPv4, 一种是基于IPv6的移动IPv6。     

移动IPv6技术在下一代互联网的应用探讨

本文在下一代互联网的基础上,分析了移动IPv6技术的一些基本概念和发展。通过对移动IPv6~作原理以及其优势的研究,指出了移动用户不需要固定的IP地址,只需在终端采用移动IPv6技术就可以随时随地的获取需要的数据。最后通过移动IPv6在无线局域网和4G移动通信网中的应用探讨,研究认为移动IPv6技术的进一步发展和应用将会给移动用户带来更多方便。     

中国IPv6务实发展的冷思维

移动IP技术是移动通信和IP技术的深层融合,它可以使每一个用户终端都具有网络节点的能力, 能够随时随地获取信息,从而实现人们梦想的无处不在的多媒体通信,移动IP技术也因此倍受业内人士的关注和重视。本期推出的“移动IP”专题,从移动IP系统的解决方案、安全性分析、IPv6与IPv4的比较、IPv6在3G/4G中的应用以及我国在发展IPv6中应注意的问题等几个方面对移动IP技术进行了探讨,希望对业界有所帮助。     

移动IPv6的发展

传统移动通信采用的是电路交换技术，这种方式不适用于移动数据业务和移动多媒体业务。采用电路交换的无线网络将逐步改造为以IP分组交换为基础的无线网络，并最终实现无处不在的无线多媒体通信的梦想。介绍了移动IP的产生及移动IPv4存在的问题．移动IPv6的基本原理以及IPv6为移动分组网络带来的好处。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.