Highly efficient,solution-processed orange–red phosphorescent OLEDs by using new iridium phosphor with thieno[3,2-c]pyridine derivative as cyclometalating ligand

A new orange iridium phosphor of (EtPy)₂Ir(acac) with thieno[3,2-c]pyridine derivative as cyclometalating ligand was designed and synthesized. The combination of thieno[3,2-c]pyridine with rigid fluorene moiety enlarged the π conjugation of ligand, and consequently caused the peak emission of (EtPy)₂Ir(acac) red-shift to 588 nm. By using (EtPy)₂Ir(acac) as the orange phosphor, the fully solution-processed PhOLEDs were fabricated with the following device configuration: ITO/PEDOT:PSS/PVK: PBD: (EtPy)₂Ir(acac)/CsF/Al. With PEDOT:PSS 8000 as the hole-injecting material, the orange device achieved a maximum current efficiency of 13.4 cd A⁻¹, a maximum power efficiency of 5.9 lm W⁻¹ and a maximum external quantum efficiency (EQE) of 11.2% with a CIE coordinate of (0.62, 0.38) that falls into the orange–red region. Moreover, at high luminance of 1000 cd m⁻², the device still remained high current efficiency of 8.7 cd A⁻¹ and EQE of 7.3%. To the best of our knowledge, these efficiencies were among the highest ever reported for solution-processed orange–red PhOLEDs.     

Deep blue phosphorescent organic light-emitting diodes with excellent external quantum efficiency

Highly efficient deep blue phosphorescent organic light-emitting diodes (PHOLEDs) using two heteroleptic iridium compounds, (dfpypy)₂Ir(acac) and (dfpypy)₂Ir(dpm), as a dopant and 9-(3-(9H-carbazol-9-yl)phenyl)-9H-carbazol-3-yl)diphenylphosphine oxide as a host material have been developed. The electroluminescent device of (dfpypy)₂Ir(dpm) at the doping level of 3 wt% shows the best performance with external quantum efficiency of 18.5–20.4% at the brightness of 100–1000 cd/m² and the color coordinate of (0.14, 0.18) at 1000 cd/m².     

Multifunctional Triphenylamine/Oxadiazole Hybrid as Host and Exciton‐Blocking Material: High Efficiency Green Phosphorescent OLEDs Using Easily Available and Common Materials

A new triphenylamine/oxadiazole hybrid, namely m‐TPA‐o‐OXD, formed by connecting the meta‐position of a phenyl ring in triphenylamine with the ortho‐position of 2,5‐biphenyl‐1,3,4‐oxadiazole, is designed and synthesized. The new bipolar compound is applicable in the phosphorescent organic light‐emitting diodes (PHOLEDs) as both host and exciton‐blocking material. By using the new material and the optimization of the device structures, very high efficiency green and yellow electrophosphorescence are achieved. For example, by introducing 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene (TPBI) to replace 2, 9‐dimethyl‐4,7‐diphenyl‐1, 10‐phenanthroline (BCP)/tris(8‐hydroxyquinoline)aluminium (Alq₃) as hole blocking/electron transporting layer, followed by tuning the thicknesses of hole‐transport 1, 4‐bis[(1‐naphthylphenyl)amino]biphenyl (NPB) layer to manipulate the charge balance, a maximum external quantum efficiency (η_EQE,max) of 23.0% and a maximum power efficiency (η_p,max) of 94.3 lm W⁻¹ are attained for (ppy)₂Ir(acac) based green electrophosphorescence. Subsequently, by inserting a thin layer of m‐TPA‐o‐OXD as self triplet exciton block layer between hole‐transport and emissive layer to confine triplet excitons, a η_EQE,max of 23.7% and η_p,max of 105 lm W⁻¹ are achieved. This is the highest efficiency ever reported for (ppy)₂Ir(acac) based green PHOLEDs. Furthermore, the new host m‐TPA‐o‐OXD is also applicable for other phosphorescent emitters, such as green‐emissive Ir(ppy)₃ and yellow‐emissive (fbi)₂Ir(acac). A yellow electrophosphorescent device with η_EQE,max of 20.6%, η_c,max of 62.1 cd A⁻¹, and η_p,max of 61.7 lm W⁻¹, is fabricated. To the author’s knowledge, this is also the highest efficiency ever reported for yellow PHOLEDs.     

Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

High-performance 20-μm unit-cell two-color detectors using an n-p⁺-n HgCdTe triple-layer heterojunction (TLHJ) device architecture grown by molecular beam epitaxy (MBE) on (211)-oriented CdZnTe substrates with midwavelength (MW) infrared and long wavelength (LW) infrared spectral bands have been demonstrated. Detectors with nominal MW and LW cut-off wavelengths of 5.5 μm and 10.5 μm, respectively, exhibit 78 K LW performance with >70 % quantum efficiency, reverse bias dark currents below 300 pA, and RA products (zero field of view, 150-mV bias) in excess of 1×10³ Ωcm². Temperature-dependent current-voltage (I–V) detector measurements show diffusion-limited LW dark current performance extending to temperatures below 70 K with good operating bias stability (150 mV ± 50 mV). These results reflect the successful implementation of MBE-grown TLHJ detector designs and the introduction of advanced photolithography techniques with inductively coupled plasma (ICP) etching to achieve high aspect ratio mesa delineation of individual detector elements with benefits to detector performance. These detector improvements complement the development of high operability large format 640×480 and 1280×720 two-color HgCdTe infrared focal plane arrays (FPAs) to support third generation forward looking infrared (FLIR) systems.     

Highly efficient single-layer organic light-emitting devices using cationic iridium complex as host

Highly efficient single-layer organic light-emitting devices (OLEDs) based on blended cationic Ir complexes as emitting layer have been demonstrated using narrow band gap cationic Ir complex [Ir(Meppy)₂(pybm)](PF₆) (C1) as guest and wide band gap cationic Ir complex [Ir(dfppy)₂(tzpy-cn)](PF₆) (C2) as host. As compared with single cationic Ir complex emitting layer, these host–guest systems exhibit highly enhanced efficiencies, with maximum luminous efficiency of 25.7 cd/A, external quantum efficiency of 8.6%, which are nearly 3-folds of those of pure C1-based device. Compared with a multilayer host-free device containing C1 as emitting layer and TPBI as electron-transporting and hole-blocking layer, the above single-layer devices also show 2-folds enhancement efficiencies. The high efficiencies achieved in these host–guest systems are among the highest values reported for ionic Ir complexes-based solid-state light-emitting devices. In addition, a white-similar emission with CIE of (0.36, 0.47) has also been achieved with luminous efficiency of 4.2 cd/A as the C1 concentration is 0.1 wt.%. The results demonstrate that the ionic Ir complexes-based host–guest system provides a new approach to achieve highly efficient OLEDs upon single-layer device structure and solution-processing technique.     

Highly efficient inverted top emitting organic light emitting diodes using a horizontally oriented green phosphorescent emitter

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode doped with Ir(ppy)₂tmd [bis(2-phenylpyridine)iridium(III)(2,2,6,6-tetramethylheptane-3,5-diketonate)] as the horizontally oriented emitter in an exciplex forming co-host system. The device showed a maximum current efficiency of 120.7 cd/A, a maximum external quantum efficiency (EQE) of 27.6% and the power efficiency of 85.9 lm/W at 1,000 cd/m². Moreover the efficiency roll off was small long-lasting to 20,000 cd/m² with EQE’s and current efficiencies of 26.0% and 113.7 cd/A at 10,000 cd/m² and 24.5% and 107.6 cd/A at 20,000 cd/m², respectively. Optical analysis of the efficiencies and emission spectra of the device is also reported.     

Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection

Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type-II InSe/PdSe₂ vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe₂ is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W⁻¹, 1 × 10¹⁰ Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high-performance optoelectronic devices based on 2D vdWs heterostructures.     

Carbazole-bridged triphenylamine-bipyridine bipolar hosts for high-efficiency low roll-off multi-color PhOLEDs

Three new bipolar molecules composed of carbazole, triarylamine, and bipyridine were synthesized and utilized as host materials in multi-color phosphorescent OLEDs (PhOLEDs). These carbazole-based materials comprise a hole-transport triarylamine at C3 and an electron-transport 2,4′- or 4,4′-bipyridine at N9. The different bipyridine isomers and linking topology of the bipyridine with respect to carbazole N9 not only allows fine-tuning of physical properties but also imparts conformational change which subsequently affects molecular packing and carrier transport properties in the solid state. PhOLEDs were fabricated using green [(ppy)₂Ir(acac)], yellow [(bt)₂Ir(acac)], and red [(mpq)₂Ir(acac)] as doped emitters, which showed low driving voltage, high external quantum efficiency (EQE), and extremely low efficiency roll-off. Among these new bipolar materials, the 2Cz-44Bpy-hosted device doping with 10% (ppy)₂Ir(acac) as green emitting layer showed a high EQE of 22% (79.8 cd A⁻¹) and power efficiency (PE) of 102.5 lm W⁻¹ at a practical brightness of 100 cd m⁻². In addition, the device showed limited efficiency roll-off (21.6% EQE) and low driving voltage (2.8 V) at a practical brightness of 1000 cd m⁻².     

High efficiency, solution-processed, red phosphorescent organic light-emitting diodes from a polymer doped with iridium complexes

High efficiency, solution-processed, red emissive phosphorescent organic light-emitting diodes (PhOLEDs) have been developed. The PhOLEDs utilize bis[9-ethyl-3-(4-phenylquinolin-2-yl)-9H-carbazolato-N,C²′]iridium picolinate (Et-Cvz-PhQ)₂Ir(pic) and bis[9-(2-(2-methoxyethoxy)ethyl)-3-(4-phenylquinolin-2-yl)-9H-carbazolato-N,C²′]iridium picolinate (EO-Cvz-PhQ)₂Ir(pic) in a nonconjugated polymer host of PVK that contains the electron transport material of OXD-7 and the hole transport material TPD. The electroluminescence (EL) spectra of the PhOLEDs parallel those of (Et-Cvz-PhQ)₂Ir(pic) and (EO-Cvz-PhQ)₂Ir(pic) with maxima at 608 nm and a CIE (Commission International de l’Eclairage) coordinate of (0.62, 0.38). The red emitting PhOLEDs, based on ITO/PEDOT:PSS/PVK:OXD-7:TPD:Ir complex/cathode configuration, have a maximum external quantum efficiency of 10.6% and a luminance efficiency of 17.5 cd/A. The efficiency is significantly higher than those obtained using common solution-processed red emissive PhOLEDs.     

Phenylimidazole-based homoleptic iridium(III) compounds for blue phosphorescent organic light-emitting diodes with high efficiency and long lifetime

In order to obtain triplet emitters with high stability and efficiency, three homoleptic iridium(III) compounds — specifically, Ir(tpim)₃ (1), Ir(mtpim)₃ (2), and Ir(itpim)₃ (3), where tpim = 1-([1,1′:3′,1″-terphenyl]-2′-yl)-2-(4-fluorophenyl)-1H-imidazole, mtpim = 2-(4-fluorophenyl)-1-(5′-methyl-[1,1′:3′,1″-terphenyl]-2′-yl)-1H-imidazole, and itpim = 2-(4-fluorophenyl)-1-(5′-isopropyl-[1,1′:3′,1″-terphenyl]-2′-yl)-1H-imidazole — were prepared by one-pot reaction of the corresponding phenylimidazole ligand with an Ir(I) complex as a starting material. Compounds 1–3 emit bright sky-blue phosphorescence with λ_max = 459–463 nm and phosphorescent quantum efficiencies of 0.38–0.50. Multi-layer phosphorescent organic light-emitting diodes using compounds 1–3 as the triplet emitters and mCBP (3,3-di(9H-carbazol-9-yl)biphenyl) as the host have been fabricated. Compound 3 doped in the emissive layer demonstrate external quantum efficiency as high as 20.1% at 1000 cd/m². In addition, the device based on compound 1 as an emitter shows a stable lifetime greater than 300 h at 1000 cd/m², which is one of the best results concerning the device lifetime.     

Highly efficient bluish green phosphorescent organic light-emitting diodes based on heteroleptic iridium(III) complexes with phenylpyridine main skeleton

A new series of heteroleptic iridium(III) complexes, bis(2-phenylpyridinato-N,C2′)iridium (2-(2′,4′-difluorophenyl)-4-methylpyridine), (ppy)₂Ir(dfpmpy) and bis(2-(2′,4′-difluorophenyl)-4-methylpyridinato-N,C2′)iridium (2-phenylpyridine) (dfpmpy)₂Ir(ppy), have been synthesized by using phenylpyridine as a main skeleton for bluish green phosphorescent organic light-emitting diodes (PhOLEDs). The Ir(III) complexes showed high thermal stability and high photoluminescent (PL) quantum yields of 95% ± 4% simultaneously. As a result, the PhOLEDs with the heteroleptic Ir(III) complexes showed excellent performances approaching 100% internal quantum efficiency with a very high external quantum efficiency (EQE) of ∼27%, a low turn-on voltage of 2.4 V, high power efficiency of ∼85 lm/W, and very low efficiency roll-off up to 20,000 cd/m².     

Design and development of multicolor MWIR/LWIR and LWIR/VLWIR detector arrays

Multicolor infrared (IR) focal planes are required for high-performance sensor applications. These sensors will require multicolor focal plane arrays (FPAs) that will cover various wavelengths of interest in mid wavelength infrared/long wavelength infrared (MWIR/LWIR) and long wavelength infrared/very long wavelength infrared (LWIR/VLWIR) bands. There has been significant progress in HgCdTe detector technology for multicolor MWIR/LWIR and LWIR/VLWIR FPAs.^1–3 Two-color IR FPAs eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in simpler, reliable, and affordable systems. The complexity of a multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally, material characteristics are only relatively controllable and depend on the process repeatability. In this context, the ability of performing “simulation experiments” where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications.     

High efficiency yellowish green phosphorescent emitter derived from phenylbenzothienopyridine ligand

A yellowish green phosphorescent dopant derived from phenylbenzothienopyridine ligand, iridium (III) [bis(1-phenylbenzo[4,5]thieno[2,3-c]pyridinato-N,C²]picolinate. (Ir(DTNP)₂pic) was synthesized and the device performances of the Ir(DTNP)₂pic was studied. The Ir(DTNP)₂pic dopant exhibited yellowish green emission at 548 nm and showed a high quantum efficiency of 22.4% at 1000 cd/m² with a color coordinate of (0.43, 0.57) in yellowish green phosphorescent organic light-emitting diodes.     

A highly efficient tris-cyclometalated iridium complex based on phenylphthalazine derivative for organic light-emitting diodes

A novel ligand 9-(4-(4-chlorophenyl)phthalazin-1-yl)-9H-carbazole (HCPC) was designed and prepared, and the corresponding tris-cyclometalated iridium(III) complex Ir(CPC)₃ was readily synthesized by the reaction of the ligand with IrCl₃ · 3H₂O at 80 °C for 20 h. A highly efficient organic light-emitting device using this complex as a dopant was obtained. The device fabricated by solution process showed a maximum luminance of 2948 cd/m² at a current density of 115.6 mA/cm² and a maximum external quantum efficiency of 20.2% at 0.18 mA/cm².     

Photo-induced excess low frequency noise in HgCdTe photodiodes

We have investigated the properties of excess low frequency noise in illuminated mid wavelength infrared and long wavelength infrared HgCdTe photodiodes at zero bias. The current power spectrum (S_i) dependence is usually close to inverse frequency (f), but substantial variations have been observed. The magnitude of l/f spectra is voltage independent for small bias voltages, but is proportional to the square of the photocurrent (I). Consequently, the l/f knee increases, with photocurrent. Variable area device studies indicate that the noise sources are more closely associated with the device area (A_j) than perimeter, indicating bulk limitations. The power spectrum can be represented by an empirical relationship of the form S_i=α_phI ²/fA_j. This defines a figure of merit, α_ph which takes into the account the relationship between current dependence and device geometry. α_ph is device dependent, suggesting that randomly distributed defects play a role in the difference. This is also supported by noting that devices fabricated in material grown on lattice matched substrates have lower α_ph (10⁻¹⁶ cm²) than those fabricated in material grown on nonlattice matched substrates (10⁻¹⁴ cm²), which usually have two orders of magnitude larger dislocation density. We conclude that photo-induced l/f noise can be reduced via defect reduction and is not fundamental. Data on our best devices indicates that α_ph is somewhat lower for smaller band gap material. The temperature dependence of photo-induced excess low frequency noise is much weaker than that of bias induced excess low frequency noise, indicating unrelated generation mechanisms. In addition, photo-induced l/f adds in quadrature with bias induced l/f noise and is not well correlated in magnitude with either bias induced l/f noise or detector dark currents.     

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Schottky contacts of Pt and Ir on undoped Al_0.36Ga_0.64N have been fabricated and the ideality factor, the built-in voltage and the reverse bias current were determined using current–voltage measurements to make a comparison.The smallest ideality factors, the lowest reverse bias current and the highest built-in voltages have been obtained for Ir Schottky contacts.We have studied the effect of an annealing for Pt and Ir Schottky contacts, on the ideality factor, the built-in voltage and the reverse bias current. A decrease of the ideality factor and the reverse bias current associated to an increase of the built-in voltage have been obtained except for high annealing temperature (T > 400 °C).Reductions of 37% and 43% of the ideality factor and improvements of 24% and 41% of the built-in voltage have been obtained for Pt and Ir Schottky contacts, respectively, after an annealing performed at 350 °C during 30 min.Two different electrical stresses have also been applied on the ohmic and Schottky contacts during 164 h to study the reliability of the employed technology. In a first time, the devices have been stressed with a drain-to-source voltage V_DS of 20 V and a gate-to-source voltage V_GS of −5 V to submit the devices to an electrical field only and not to a thermal effect induced by the electrical current. In a second time, the aging stress has been applied for a V_DS of 20 V and for a V_GS of 0 V in order to study the impact of the electrical field and the thermal effect induced by the drain current on the electrical behaviours of Al_0.36Ga_0.64N/GaN transistors. This study has also shown the existence of electrical traps in the device structure and proved the good reliability of the involved technology.These comparative studies demonstrate that Ir is a better candidate than Pt for the realisation of Schottky contacts on undoped Al_0.36Ga_0.64N.     

Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures

This paper describes a new multi-heterojunction n ⁺pp photovoltaic infrared photodetector. The device has been developed specifically for operation at temperatures of 200–300K in the long wavelength (8–14 μm) range of the infrared spectrum. The new structure solves the perennial problems of poor quantum efficiency and low dynamic resistance found in conventional long wavelength infrared photovoltaic detectors when operated near room temperature. Computer simulations show that devices with properly optimized multiple heterojunctions are capable of achieving the performance limits imposed by the statistical nature of thermal generation-recombination processes. In order to demonstrate the technology, multiple heterojunction devices have been fabricated on epilayers grown by isothermal vapor phase epitaxy of HgCdTe and in situ As p-type doping. The detector structures were formed using a combination of conventional dry etching, angled ion milling, and angled thermal evaporation for contact metal deposition. These multi-junction n ⁺pp HgCdTe heterostructure devices exhibit performances which make them useful for many applications. D* of optically immersed multiple heterostructure photovoltaic detectors exceeding 10⁸cmHz^1/2/W were measured at λ=10.6 μm and T=300K.     

Highly efficient phosphorescent organic light-emitting diodes using a homoleptic iridium(III) complex as a sky-blue dopant

Homoleptic triscyclometalated iridium(III) complex Ir(dbi)₃ was used as a dopant for sky blue phosphorescent organic light-emitting diodes (PHOLEDs). Its photophysical, thermal, electrochemical properties as well as the device performances were investigated. Ir(dbi)₃ exhibited high quantum yield of 0.52 in solution at room temperature. A maximum current efficiency and external quantum efficiency (EQE) of 61.5 cd A⁻¹ and 23.1% were obtained, which are the highest ever reported for blue homoleptic iridium complexes. High efficiencies of 53.5 cd A⁻¹ and 20.1% EQE were achieved even at the luminance of 1000 cd m⁻².     

Buffer-modified C60/pentacene as organic charge generation layer based on Al and MoO3

We demonstrate tandem organic light-emitting diodes (TOLEDs) with excellent performance using Al and MoO₃ buffer-modified C₆₀/pentacene as charge generation layer (CGL). Al and MoO₃ were used as the electron and hole injection layers of C60/pentacene CGL, respectively. Green phosphorescence TOLEDs with the structure of ITO/NPB/mCP:Ir(ppy)₃/TPBi/Al/C₆₀/pentacene/MoO₃/NPB/mCP:Ir(ppy)₃/TPBi/Cs₂CO₃/Al were fabricated. The results show that the inserted Al and MoO₃ can effectively increase the charge injection capacity of organic CGL, resulting the improvement of luminance and current efficiency of TOLEDs. The turn-on voltage of TOLEDs is much lower than that of single-unit device, and the current efficiency is more than 2 times larger than that of the single-unit device. TOLEDs can exhibit excellent photoelectric performance when the thicknesses of Al, C₆₀, pentacene and MoO₃ are 3 nm, 15 nm, 25 nm and 1 nm, respectively. The maximum luminance and current efficiency are 7 920.0 cd/m² and 16.4 cd/A, respectively. This work is significant to build new CGL structures for realizing high-performance TOLEDs.     

Ten-inch molecular beam epitaxy production system for HgCdTe growth

Growth of Hg_1−xCd_xTe by molecular beam epitaxy (MBE) has been under development since the early 1980s at Rockwell Scientific Company (RSC), formerly the Rockwell Science Center; and we have shown that high-performance and highly reproducible MBE HgCdTe double heterostructure planar p-on-n devices can be produced with high throughput for various single- and multiplecolor infrared applications. In this paper, we present data on Hg_1−xCd_xTe epitaxial layers grown in a ten-inch production MBE system. For growth of HgCdTe, standard effusion cells containing CdTe and Te were used, in addition to a Hg source. The system is equipped with reflection high energy electron diffraction (RHEED) and spectral ellipsometry in addition to other fully automated electrical and optical monitoring systems. The HgCdTe heterostructures grown in our large ten-inch Riber 49 MBE system have outstanding structural characteristics with etch-pit densities (EPDs) in the low 10⁴ cm⁻² range, Hall carrier concentration in low 10¹⁴ cm⁻³, and void density <1000 cm². The epilayers were grown on near lattice-matched (211)B Cd_0.96Zn_0.04Te substrates. High-performance mid wavelength infrared (MWIR) devices were fabricated with R₀A values of 7.2×10⁶ Ω-cm² at 110 K, and the quantum efficiency without an antireflection coating was 71.5% for cutoff wavelength of 5.21 μm at 37 K. For short wavelength infrared (SWIR) devices, an R₀A value of 9.4×10⁵ Ω-cm² at 200 K was obtained and quantum efficiency without an antireflection coating was 64% for cutoff wavelength of 2.61 μm at 37 K. These R₀A values are comparable to our trend line values in this temperature range.