Synthesis of Highly Oriented Lead Zirconate–Lead Titanate Film Using Metallo-organics

Crack-free Pb(Zr,Ti)O₃ (PZT) thin films with preferred orientation were prepared successfully on MgO (100), SrTiO₃ (100), and Pt/Ti/SiO₂/Si substrates from metal alkoxide solutions. Calcination of precursor films in a H₂O─-O₂ gas mixture was found to be effective not only for low-temperature crystallization of perovskite PZT, but also for obtaining the preferred orientation of PZT films. Single-phase PZT films with high preferred orientation were synthesized on MgO (100) and Pt/Ti/SiO₂/Si substrates at 550° and 600°C for 2 h, respectively. The PZT film on the Pt/Ti/SiO₂/Si substrate showed a permittivity of 520, tan δ of 0.03, a remanent polarization of 24 μC/cm², and a coercive field of 54 kV/cm.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Preparation of Tetragonal Barium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal Method

Tetragonal BaTiO₃ thin films were prepared directly on Ti metal substrates in Ba(OH)₂ solutions by a hydrothermal method at temperatures 400° to 800°C for 5 to 240 min. The film thickness estimated from weight gain of Ti plate was in the range from 0.5 to 2.5 μm, and it increased with increasing treatment temperature, treatment time, and Ba(OH)₂ concentration. Rectangular crystals having {100} and {001} faces grew idiomorphically with approximate crystal size of 0.3 to 2.0 μm. The tetragonality of the BaTiO₃ films became apparent when the average crystal size exceeded about 1 μm. Lattice parameters of the films were a = 3.994 Å, c = 4.035 Å, and c/a = 1.010. The films formed above 600°C had preferred orientation showing stronger XRD peaks of h 00 and 00 l than the other peaks.     

Deposition of Pb(Zr,Ti)O3 Thin Films by Metal-Organic Chemical Vapor Deposition Using β-diketonate Precursors at Low Temperatures

Lead zirconate titanate (PZT) thin films were deposited by metal-organic chemical vapor deposition (MOCVD) using β-diketonate precursors and 0₂ at temperatures below 500°C on variously passivated Si substrates. PZT thin films could not be deposited on bare Si substrates, owing to a serious diffusion of Pb into the Si substrate during deposition. Pt/SiO₂/Si substrates could partially block the diffusion of Pb, but a direct deposition of PZT thin films on the Pt/SiO₂/Si substrates resulted in a very inhomogeneous deposition. A TiO₂ buffer layer deposited on Pt/SiO₂/Si substrates could partially suppress the diffusion of Pb and produce homogeneous thin films. However, the crystallinity of PZT thin films deposited on the TiO₂-buffered Pt/SiO₂/Si substrate was not good enough, and the films showed random growth direction. PZT thin films deposited on the PbTiO₃-buffered Pt/SiO₂/Si substrates had good crystallinity and a- and c-axis oriented growth direction. However, the PZT thin film deposited at 350°C showed fine amorphous phases at the grain boundaries, owing to the low chemical reactivities of the constituent elements at that temperature, but they could be crystallized by rapid thermal anneaiing (RTA) at 700°C. PZT thin film deposited on a 1000-å PbTiO₃,-thin-film-buffered Pt/SiO₂/Si substrate at 350°C and rapid thermally annealed at 700°C for 6 min showed a single-phase perovskite structure with a composition near the morphotropic boundary composition.     

Synthesis of Lead Barium Niobate Powders and Thin Films by the Sol-Gel Method

Crack-free, dense, and transparent Pb_0.6Ba_0.4Nb₂O₆ (PBN60) thin films have been prepared by a sol-gel method with metal alkoxides and metal acetate. A homogeneous and stable precursor solution was obtained from Ba metal, Pb(CH₃COO)₂, and Nb(OEt)₅ in 2-methoxyethanol. PBN60 powder crystallized to the hexagonal phase at 600°C and then completely transformed to the orthorhombic phase of the tungsten bronze structure at 1250°C. The hexagonal phase was formed on SiO₂ glass, MgO(lOO), and sapphire(R) substrate at 600°C, while the orthorhombic phase was only on a sapphire(C) substrate. Orthorhombic PBN60 films with c -axis preferred orientation were successfully synthesized on sapphire(C) substrates at 600°C.     

Excimer Laser Crystallized (Pb,La)(Zr,Ti)O3 Thin Films

A KrF pulsed excimer laser (248 nm) was utilized to crystallize sputtered La-modified Pb(Zr,Ti)O₃ (3:30:70) (PLZT) films on LaNiO₃-coated silicon substrates. The film surface was irradiated with defocused laser pulses in an oxygen ambient at various substrate temperatures. Polycrystalline, phase pure perovskite PLZT thin films were produced for substrate temperatures of 250°C and higher. The dielectric constant and loss tangent values of laser-assisted crystallized (10 min exposure at 10 Hz using a substrate temperature of 400°C) PLZT thin films at 10 kHz were 406 and 0.027; in comparison, rapid thermal annealed films (annealed at 700°C for 1 min) showed values of 400 and 0.021, respectively. Laser crystallized films exhibited a remanent polarization value of 14 μC/cm² with a coercive field |( E _+c+ E _−c)|/2 of 95 kV/cm.     

Formation of High-Tc Superconducting Bi-Pb-Sr-Ca-Cu Oxide Films by Spray Pyrolysis of an Oxalate Suspension

A Bi-Pb-Sr-Ca-Cu oxide superconducting thick film, exhibiting T_c(onset) = 120 K and T_c(zero) = 100 K, can be obtained by spray pyrolysis of oxalate suspension on the (100) MgO substrate, using the partial-melting state at 860°C for 15 h, a rapid-quenching process to 500°C, and a postannealing treatment for 1 h at 835°C. These processes are believed to enhance the volume fraction of 2223 phase and increase the T_c(zero) . The films show preferred orientation and adhere well to the substrate.     

Electromechanical Properties of PMN–PZT Piezoelectric Single Crystals Near Morphotropic Phase Boundary Compositions

Pb(Mg_1/3Nb_2/3)O₃–PbZrO₃–PbTiO₃ (PMN–PZT) ferroelectric single crystals near morphotropic phase boundary compositions were fabricated by solid-state crystal growth. The Curie temperatures ( T _C) of the grown PMN–PZT crystals were found to be on the order of 210°C, with ferroelectric phase transition temperatures ( T _{R – T} ) in the range of 96°–165°C. The electromechanical coupling factors k ₃₃ and k ₃₂ were found to be >90% and >−87%, respectively. The coercive field E _C for all the compositions was on the order of 5 kV/cm, double the value of pure Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMNT) crystals. The temperature dependence of the piezoelectric and electromechanical properties and dc bias effect on the dielectric behavior were investigated. The temperature usage range under dc bias was found to be improved when compared with pure PMNT crystals with similar piezoelectric properties.     

Sol-Gel Route to Ferroelectric Layer-Structured Perovskite SrBi2Ta2O9 and SrBi2Nb2O9 Thin Films

Precursors for layer-structured perovskite thin films of SrBi₂Ta₂O₉ (SBT) and SrBi₂Nb₂O₉ (SBN) were prepared by the reactions of a strontium-bismuth double methoxyethoxide and tantalum or niobium methoxyethoxide in methoxyethanol, followed by partial hydrolysis. Several spectroscopic techniques, such as ¹H-, ¹³C-, and ⁹³Nb-NMR (nuclear magnetic resonance), and Fourier-transform infrared spectroscopy were used to analyze the arrangement of the metals and oxygen in the precursor molecules. The precursors contained Sr-O-M (where M is Ta or Nb) bonds (i.e., a strontium is connected to two MO₆ octahedra) and Sr-O-Bi bonds with a bismuth atom bonded to the oxygens of the MO₆ octahedron. The arrangement of metals and oxygens was considered to be similar to the layer-structured perovskite crystal sublattice. As a result, the sol-gel-derived SBT thin films crystallized, by rapid thermal annealing in an oxygen atmosphere below 550°C, and they exhibited preferred (115) orientation. The crystallinity improved and the crystallite size increased with temperature up to 700°C. In the case of SBN thin films, a low heating rate (2°C/min) was necessary for the control of the crystallographic (115) orientation, whereas a rate of 200°C/s (rapid thermal annealing) produced films that exhibited c -axis orientation. The (115) SBT thin film, heated to 700°C, exhibited improved ferroelectric properties.     

Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors

Crystallization studies were performed of epitaxial La₂Zr₂O₇ (LZO) films on biaxially textured Ni–3at.%W substrates having thin Y₂O₃ (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c -axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850°–950°C in flowing one atmosphere gas mixtures of Ar–4% H₂ with an effective oxygen partial pressure of P(O₂)∼10⁻²² atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100°C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.     

Ultraviolet Patterning of Alkoxy-Derived Lithium Niobate Film

Patterned lithium niobate (LN) films were synthesized successfully from a precursor film containing 1-phenyl-1,3-butanedione (PBD) by ultraviolet (UV) irradiation. A LN precursor solution composed of lithium ethoxide and niobium ethoxide was modified with PBD in ethanol to form LiNb(OEt)_{6- n} (PBD) _n , which was designed to have a specific UV absorption at 330 nm. The precursor film began to crystallize at 400°C on sapphire C substrates. The UV absorption band at 330 nm in the precursor film decreased in intensity with increased exposure time to UV light. The patterned LN films crystallized at 550°C on sapphire C substrates showed a (006) preferred orientation.     

Solid-State Diffusive Amorphization in TiO2/ZrO2 Bilayers

Thin films of crystalline TiO₂ were deposited on self-assembled organic monolayers from aqueous TiCl₄ solutions at 80°C; partially crystalline ZrO₂ films were deposited on top of the TiO₂ layers from Zr(SO₄)₂ solutions at 70°C. In the absence of a ZrO₂ film, the TiO₂ films had the anatase structure and underwent grain coarsening on annealing at temperatures up to 800°C; in the absence of a TiO₂ film, the ZrO₂ films crystallized to the tetragonal polymorph at 500°C. However, the TiO₂ and ZrO₂ bilayers underwent solid-state diffusive amorphization at 500°C, and ZrTiO₄ crystallization could be observed only at temperatures of 550°C or higher. This result implies that metastable amorphous ZrTiO₄ is energetically favorable compared to two-phase mixtures of crystalline TiO₂ and ZrO₂, but that crystallization of ZrTiO₄ involves a high activation barrier.     

Oriented Lead Titanate Film Growth at Lower Temperatures by the Sol-Gel Method on Particle-Seeded Substrates

An approach to fabricate lead titanate (PbTiO₃) films with preferred orientation on arbitrary substrates by a sol-gel method was developed. To ensure a preferred crystallographic orientation on the substrates with different crystal structure, well-defined platelet PbTiO₃ particles were used as seeds. Because the basal plane of the platelet-shaped particles was the (001) plane, the particles aligned with the c-axis perpendicular to the substrates. During crystallization of the sol-gel PbTiO₃ films on the particle-seeded substrate, preferential nucleation occurred on seeded particles with the same crystallographic orientation as the particles at a much lower temperature. In the current study, (100) and (001) textured PbTiO₃ films have been produced on various substrate materials such as silicon, silicate glass, indium tin oxide (ITO) glass, and titanium metal at temperatures as low as 275°C. The microstructure of the films was examined by scanning electron microscopy and atomic force microscopy. Limited ferroelectric properties also were determined, to underscore the preferred orientation that was produced in these materials.     

Lead Zirconate Titanate Thin Films by Aerosol Plasma Deposition: Microstructure Analysis

Lead zirconate titanate (Pb(Zr,Ti)O₃, PZT) thin films were grown on silicon 〈100〉 substrate by aerosol plasma deposition (APD) using solid-state-reacted powder containing donor oxide Nb₂O₅ when keeping the substrate at room temperature and 200°C. Crystalline phases of the deposited films have been analyzed via X-ray diffractometry (XRD), and microstructure via scanning and transmission electron microscopy (SEM and TEM). Cross-sectional TEM revealed that the microstructure comprised several layers including the deposited PZT film and the platinum-electrode-and-titanium-buffered layers on SiO₂–Si substrate. The Pt-electrode layer contained (111)_Pt twinned columnar grains with a slight misorientation and forming low-angle grain boundaries among them. The PZT layer contained randomly oriented grains embedded in an amorphous matrix. Some of the PZT grains, oriented with the zone axis Z = [[Twomacr]11]_PZT parallel to Z = [111]_Pt, were grown epitaxially on the Pt layer by sharing the (111)_PZT plane with the (111)_Pt twinned columnar Pt crystals. However, the existence of such an orientation relationship was confined to several nanosize grains at and near the PZT-Pt interface, and no gross film texture has been developed. An amorphous grain boundary phase, generated by pressure-induced amorphisation (PIA) in the solid state, was identified by high-resolution imaging. Its presence is taken to account for the densification of the PZT thin films via a sintering mechanism involving an amorphous phase on deposition at 25° and 200°C.     

Use of Stress To Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties

Thin films of Pb(Zr_0.4Ti_O.6)O₃ produced by chemical solution deposition were used to study the effects of stress from different platinized single-crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature ( T _C). Films on Al₂O₃ were under minimal stress at T _C, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher P _r and − d ₃₁ values than (111) films.     

Preparation of Barium Titanate Films at 55°C by an Electrochemical Method

Work by previous investigators has shown that BaTiO₃ films can be synthesized from solution over temperature ranges from 80°C to greater than 200°C. In the present work, electrically insulating crystalline films of BaTiO₃ have been electrochemically deposited on titanium substrates at temperatures as low as 55°C. Auger spectroscopic analyses with depth profiling indicate that a titanium oxide layer whose thickness is governed by current density acts as a precursor to BaTiO₃. Formation of BaTiO₃ is found to be favored only in highly alkaline solutions. This is consistent with the phase stability reported for the Ba─Ti─CO₂─H₂O system at 25°C. Lower processing temperatures (55°C) favor the formation of thick, electrically resistive, and wellcrystallized BaTiO₃ films, apparently due to increased oxygen solubility in the electrolyte solution. Films produced at 100°C are much thinner and are electrically conductive due to fissures and pores in their microstructure. Initial studies on the effect of current density indicate the formation of thinner and porous films with thicker titanium oxide intermediate layers.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Preparation of Potassium Tantalate Niobate by Sol–Gel Method

Perovskite potassium tantalate niobate (KTN) powders and thin films were synthesized from a metal alkoxide solution. Homogeneous KTN coating solutions were prepared from KOC₂H₅, Ta(OC₂H₅)₅, and Nb(OC₂H₅)₅ in absolute ethanol. The precursor crystallized to pyrochlore at ∼ 650°C, and then to perovskite at ∼ 750°C, depending upon Ta:Nb ratio. H₂O vapor during calcination was found to play a prominent role in the direct and predominant crystallization of perovskite films with preferred orientation. Highly oriented KTN films of perovskite structure were successfully prepared on MgO (100) substrates at 675°C.     

Pb-Diffusion Barrier Layers for PbTiO3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition

The interfaces between metal organic chemical vapor deposited PbTiO₃ thin films and various diffusion barrier layers deposited on Si substrates were investigated by transmission electron microscopy. Several diffusion barrier thin films such as polycrystalline TiO₂, amorphous TiO₂, ZrO₂, and TiN were deposited between the PbTiO₃ thin film and Si substrate, because the deposition of PbTiO₃ thin films on bare Si substrates produced Pb silicate layers at the interface irrespective of the deposition conditions. The TiO₂ films were converted to PbTiO₃ by their reaction with diffused Pb and O ions during PbTiO₃ deposition at a gubstrate temperature of 410°C. Further diffusion of Pb and O induces formation of a Pb silicate layer at the interface. ZrO₂ did not seem to react with Pb and O during PbTiO₃ deposition at the same temperature, but the Pb and O ions that diffused through the ZrO₂ layer formed a Pb silicate layer between the ZrO₂ and Si substrate. The TiN films did not seem to react with Pb and O ions during the deposition of PbTiO₃ at 410°C, but reacted with PbTiO₃ to form a lead-deficient pyrochlore during postdeposition rapid thermal annealing at 700°C. However, TiN could effectively block the diffusion of Pb and O ions into the Si substrate and the formation of Pb silicate at the interface.     

Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(Zr,Ti)O3 Thin Films

Ferroelectric Pb(Zr_xT_1–x)O₃, films were successfully and reproducibly deposited by both hot–wall metalorganic chemical vapor deposition (MOCVD) and cold-wall MOCVD. One of the important problems associated with the MOCVD techniques is the selection of ideal precursors. After an intensive investigation for the most suitable precursors for MOCVD PZT films, the safe and stable precursors, namely lead tetramethylheptadione [Pb(thd)₂], zirconium tetramethylheptadione [Zr(thd)₄], and titanium ethoxide [Ti(OEt)₄], were chosen. The films were deposited at temperatures as low as 550°C and were single-phase perovskite in the as-deposited state. Also, the films were smooth, specular, crack-free, and uniform, and adhered well to the substrates. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. Auger electron spectroscopic (AES) depth profile showed good compositional uniformity through the thickness of the films. The AES spectra also showed no carbon contamination in the bulk of the films. As-deposited films were dense and showed uniform and fine grains (≅0.1 μm).The optical properties of the films on the sapphire disks showed high refractive index ( n = 2.413) and low extinction coeflicient ( k = 0.0008) at a wavelength of 632.8 nm. The PZT (82/18) film annealed at 600°C showed a spontaneous polarization of 23.3 μC/cm² and a coercive field of 64.5 kV/cm.