Synthesis of a Polyborosilazane and Its Conversion into Inorganic Compounds

A novel polyborosilazane was synthesized by reacting per-hydropolysilazane with trimethyl borate. The chemical structure of this polymer was investigated by the techniques of infrared spectroscopy and nuclear magnetic resonance measurements. Amorphous silicon nitride was obtained by pyrolysis of this polymer in a stream of anhydrous ammonia to 1000°C with high ceramic yield. The pyrolysis product remained amorphous after additional heating to 1700°C under N₂. Crystallization to α-Si₃N₄ and β-Si₃N₄ proceeded with heat treatment at 1800°C under N₂. These results indicate that polyborosilazane is a good precursor for amorphous silicon nitride based materials.     

Preparation of Silicon Nitride from Silica

The nucleation and growth of Si₃N₄ from a carbon-Si0₂ mixture in an N₂ atmosphere at 1400°C was studied by varying the specific surface area, particle size, and distribution of the Si0₂and carbon. Si₃N₄ yield increased and particle size decreased with increasing Si0₂ and carbon specific surface area. Manner of distribution appeared to have little effect but was difficult to assess. A model was proposed in which heterogeneous nucleation occurs on either the Si0₂ or C surfaces only in the early stages of the reaction. Growth occurs by the reaction     

Post-Hot-Pressing and High-Temperature Bending Strength of Reaction-Bonded Silicon Nitride-Molybdenum Disilicide and Silicon Nitride-Tungsten Silicide Composites

A hot-pressing technique was used for the further densification of reaction-bonded silicon nitride-molybdenum disilicide and silicon nitride-tungsten silicide (Si₃N₄-MoSi₂ and Si₃N₄-WSi₂, respectively) compacts that were prepared via a presintering step and a nitriding process from silicon-molybdenum or silicon-tungsten powders. After hot pressing was performed at 1650°C (25 MPa for 1 h), most of the alpha-Si₃N₄ that formed during the reaction-bonding process was transformed to β-Si₃N₄ and, moreover, a very small amount of Mo₅Si₃ (W₅Si₃) was formed in addition to MoSi₂ (WSi₂). Three- and four-point bend tests were performed at room temperature (25°C), 1000°C, 1200°C, and 1400°C. The bend strength of the Si₃N₄-WSi₂ composite increased slightly from room temperature up to 1000°C, whereas the Si₃N₄-MoSi₂ composite showed a more-pronounced increase up to 1200°C. Microstructural analysis was performed on the fracture surfaces of both composites that were tested at different temperatures.     

Preparation of High-Density Si3N4 by a Gas-Pressure Sintering Process

Si₃N₄ compacts, containing ≅7 wt% of both BeSiN₂ and SiO₂ as densification aids, can be reproducibly sintered to relative densities >99% by a gas-pressure sintering process. Nearly all densification takes place via liquid-phase sintering of transformed β-Si₃N₄ grains at T =1800° to 2000°C. Compacts with high density are produced by first sintering to the closed-pore stage (≅92% relative density) in 2.1 MPa (20 atm) of N₂ pressure at 2000°C and then increasing the N₂ pressure to 7.1 MPa (70 atm) where rapid densification proceeds at T = 1800° to 2000°C. The experimental density results are interpreted in terms of theoretical arguments concerning the growth (coalescence) of gas-filled pores and gas solubility effects. Complex chemical reactions apparently occur at high temperatures and are probably responsible for incomplete understanding of some of the experimental data.     

Phase Relations in the Ternary Systems Nd─B─N, Sm─B─N, and Gd─B─N

Phase relations and phase stabilities have been derived for the ternary systems RE─B─N (RE = Nd, Sm, or Gd) at elevated temperatures (1400°C and above) by means of X-ray powder analysis. Under the experimental conditions selected, various ternary compounds are found to be stable: Nd₃B₂N₄ with the Ce₃B₂N₄ type and (Nd,Sm,Gd)BN₂ with the PrBN₂ type. Phase equilibria at 1400°C and under 10⁵ Pa of argon are mainly characterized by the incompatibility of the RE metals Nd, Sm, and Gd with BN due to the competing equilibria between the RE tetraborides and the RE mononitrides. Each of the ternary compounds, however, is found to be in a two-phase equilibrium with hex -BN. Because of the different thermodynamic stabilities within the various structure series of ternary rare-earth boron nitrides RE₃B₂N₄ and REBN₂, the compound Nd₃B₂N₄ is observed only at temperatures below 1800°C and under 10⁵ Pa of Ar, whereas GdBN₂ is found to be stable only at temperatures above 1400°C under a partial pressure of 10⁵ Pa of N₂.     

Effect of Nitrogen Atmosphere on the Densification of a 3-mol%-Yttria-Doped Zirconia

The densification behavior of a 3-mol%-Y₂O₃-doped ZrO₂ (3Y-ZrO₂) has been investigated under N₂ and O₂ atmospheres. Powder compacts have been sintered at 1550° and 1400°C for various times. The density of the specimen sintered at 1550°C is higher in N₂ than in O₂, while the contrary result is obtained in the case of the specimen sintered at 1400°C. Such results can be explained in terms of nitrogen solubility and oxygen vacancy in a ZrO₂ matrix. Because nitrogen solubility into the ZrO₂ increases with an increase in heat-treatment temperature, leading to the formation of oxygen vacancy, the densification rate becomes higher. The present study thus shows evidence of nitrogen solubility into the ZrO₂ and its role on the densification behavior of 3Y-ZrO₂.     

Pressureless Sintering of Dense Si3N4 and Si3N4/SiC Composites with Nitrate Additives

The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si₃N₄ and a Si₃N₄/SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si₃N₄ particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si₃N₄ particles milled with oxide additives. Monolithic Si₃N₄ could be sintered to 94% of theoretical density (TD) at 1500°C with nitrate additives. The sintering temperature was about 100°C lower than the case with oxide additives. After pressureless sintering at 1750°C for 2 h in N₂, the bulk density of a Si₃N₄/20 wt% SiC composite reached 95% TD with nitrate additives.     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

Morphology and Sinterability of Thermally Treated Carbothermally Synthesized Silicon Nitride Powders

Carbothermally produced alpha-Si₃N₄ powder is thermally treated (1400°-1500°C for 4-12 h) in nitrogen-gas to determine the impact of thermal treatment on powder composition, particle size, morphology, and sinterability. Thermal treatment reduces residual carbon and oxygen content and reduces internal porosity (lower surface area), which results in a rounding of the particles. The lower oxygen content of the heat-treated, carbothermally produced alpha-Si₃N₄ powder allows Y₂O₃-Al₂O₃-SiO₂ sintering formulation to be adjusted so that an improvement in the early stage of densification can be achieved.     

X-ray Diffraction Analysis of the Pyrolytic Conversion of Perhydropolysilazane into Silicon Nitride

A detailed investigation using X-ray diffraction and other supportive techniques was performed on a preceramic polysilazane to study its pyrolytic conversion to silicon nitride (Si₃N₄). Analytical techniques were developed to determine the volumetric degree of crystallinity with respect to pyrolysis temperature. Quantitative data for crystallite size, phase composition, and degree of crystallinity versus pyrolysis temperature and atmosphere (nitrogen and ammonia) are presented. Pyrolytic products produced under nitrogen and ammonia atmospheres consist of microcrystals of silicon, α-Si₃N₄, and β-Si₃N₄. Under both atmospheres, a majority of the char is crystalline at ≅1270°C, and the entire char is crystallized at 1400°C. Pyrolysis under an ammonia atmosphere produces nearly stoichiometric Si₃N₄, while pyrolysis under nitrogen produces silicon-rich material.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

Properties of Isostatically Hot-Pressed Silicon Nitride

Hot isostatic pressing was studied for densification of reaction-bonded Si₃N₄ containing various levels of Y₂O₃. Near-theoretical density was achieved for com positions containing 3 to 7 wt% Y₂O₃. An Si₃N₄-5 wt% Y₂O₃ composition had a 4-point flexural strength at 1375°C of 628 MPa and survived 117 h of stress rupture testing at 1400°C and 345 MPa .     

Nitridation of Amorphous Silica with Ammonia

The reaction between amorphous silica and ammonia in the temperature range 200° to 1230°C has been investigated. The reaction process was monitored with respect to the nitrogen content of the reaction product, the specific surface area of the amorphous nitrided silica, and the decomposition of ammonia. A surface reaction was observed at temperatures between 300° and 500°C, but in agreement with other studies bulk reaction only occurred above 800°C, reaching its maximum rate at about 1000°C. It is suggested that the decomposition of ammonia, which also becomes important above 800°C, is essential for the bulk nitridation reaction. At temperatures above 1050°C the nitridation yield decreases, until gas-phase reaction between SiO( g ) and N₂ or NH₃ becomes dominant at 1230°C, leading to the formation of α-Si₃N₄.     

Reaction and Formation of Crystalline Silicon Oxynitride in Si–O–N Systems under Solid High Pressure

Oxidized amorphous Si₃N₄ and SiO₂ powders were pressed alone or as a mixture under high pressure (1.0–5.0 GPa) at high temperatures (800–1700°C). Formation of crystalline silicon oxynitride (Si₂ON₂) was observed from amorphous silicon nitride (Si₃N₄) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400°C. The Si₂ON₂ coexisted with β-Si₃N₄ with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si₂ON₂. Pressing a mixture of amorphous Si₃N₄ of lower oxygen (1.5 wt%) and SiO₂ under 1.0–5.0 GPa between 1000° and 1350°C did not give Si₂ON₂ phase, but yielded a mixture of α,β-Si₃N₄, quartz, and coesite (a high-pressure form of SiO₂). The formation of Si₂ON₂ from oxidized amorphous Si₃N₄ seemed to be assisted by formation of a Si–O–N melt in the system that was enhanced under the high pressure.     

Strengthening of Silicon Carbide Ceramics by Surface Nitridation during Hot Isostatic Pressing

Surface strengthening of SiC by in situ surface nitridation during post-hot isostatic pressing (post-HIPing) in N₂ was investigated. The formation of a thin (5–15 μm) layer of submicrometer β-Si₃N₄ on the surface of SiC was obtained at 1850°C and 200 MPa. While SiC HIPed in Ar attained a mean bending strength of 660 MPa, a significant increase in strength (with a maximum fracture stress above 1000 MPa) was observed for the SiC/Si₃N₄-layer composite material. Generation of residual compressive stresses on the surface layer caused by the differences in thermal expansion may account for the observed strengthening. Thus, in situ surface nitridation by post-HIPing in N₂ may offer an attractive way to improve surface-sensitive mechanical properties of complex-shaped SiC components.     

Decomposition Suppression of Silicon Nitride by Hexagonal Boron Nitride Nanocoatings

We report a stabilized Si₃N₄ simply with nanocoatings of h-BN. Very thin BN coatings are enough for suppressing the decomposition of Si₃N₄ particles. This approach should open up a new potential way to prepare stabilized Si₃N₄. Reduced nitridation of H₃BO₃-coated Si₃N₄ powder at 1050°C in a flowing mixed 40% N₂+60% H₂ atmosphere, and then following heat-treatment at 1500°C in a flowing N₂ atmosphere can realize the nanocoating of BN on Si₃N₄ particles. Compared with the Si₃N₄ powder without nanocoatings of h-BN, TG and XRD analysis showed that the obtained h-BN nanocoated Si₃N₄ powder demonstrated obviously improved stability in argon atmosphere.     

Hydrothermal Treatment of Si3N4 for the Improvement of Oxidation Resistance at 1400°C

The surface of Si₃N₄ ceramics was hydrothermally treated with HCl or H₂SO₄ using an autoclave. The thickness of the oxide layers formed on the Si₃N₄ samples decreased to one-fourth after oxidation at 1400°C by the treatment. The oxide layer of the treated samples was dense, and flaw formation in and beneath the layer did not occur at 1400°C. The avoidance of low melting Y-silicates by leaching Y₂O₃ is the reason for the improved oxidation resistance of the hydrothermally treated Si₃N₄, despite an increase in surface porosity through a 70 μm layer.     

Ionic Conductivity of the System Si-Al-O-N from 850° to 1400°C

Electrical conductivity was measured from 850° to 1400°C for β-sialon and pure X phase as well as for the sintered system Si₃N₄-Al₂O₃, containing β-sialon, X phase, β-Si₃N₄, and glassy phase. Ionic conductivity was measured at >1000°C. The charge carriers were identified by electrolysis. The results showed that pure β-sialon is ionically conducting because of Si⁴⁺ migration for the temperature range studied. Pure X phase shows ionic conduction by Si⁴⁺ above 1000°; below 1000°C, it shows electronic conduction because of impurities. The conductivity of the sintered system Si₃N₄-Al₂O₃ containing β-sialon, β-Si₃N₄ X phase, and glassy phase changes as the relative quantities of β -sialon and X phase change. The apparent activation energies for the ionic and electronic conductivities are 45 and 20 kcal/mol, respectively.     

High/Low Modulus Si3N4-BN Composite for Improved Electrical and Thermal Shock Behavior

High-density Si₃N₄+6% CeO₂ composites with 5 to 50% BN were fabricated by hot-pressing. BN remained as a discrete phase. Dielectric constants were 4 to 8 and loss tangents were 0.0008 to 0.06 for the room temperature to 1100°C range for compositions with 10 to 50% BN. Thermal-expansion values perpendicular to the hot-pressing direction were somewhat less than those of hot-pressed Si₃N₄+6% CeO₂. Flexure strengths at room temperature were considerably lower than those of hot-pressed Si₃N₄+6% CeO₂ but values at 1000°, 1250°, and 1400°C in air were only slightly lower. Young's modulus values were found to decrease with increasing BN content at all temperatures. Better thermal shock resistance was found than for commercial hot-pressed Si₃N₄.     

Fabrication of Si3N4/SiC Composite by Reaction-Bonding and Gas-Pressure Sintering

Si₃N₄/SiC composite materials have been fabricated by reaction-sintering and postsintering steps. The green body containing Si metal and SiC particles was reaction-sintered at 1370°C in a flowing N₂/H₂ gas mixture. The initial reaction product was dominated by alpha-Si₃N₄. However, as the reaction processed there was a gradual increase in the proportion of β-Si₃N₄. The reaction-bonded composite consisting of alpha-Si₃N₄, β-Si₃N₄, and SiC was heat-treated again at 2000°C for 150 min under 7-MPa N₂ gas pressure. The addition of SiC enhanced the reaction-sintering process and resulted in a fine microstructure, which in turn improved fracture strength to as high as 1220 MPa. The high value in flexural strength is attributed to the formation of uniformly elongated β-Si₃N₄ grains as well as small size of the grains (length = 2 μm, thickness = 0.5 μm). The reaction mechanism of the reaction sintering and the mechanical properties of the composite are discussed in terms of the development of microstructures.