Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria

The electrical properties of β‐SiC ceramics were found to be adjustable through appropriate AlN–Y₂O₃ codoping. Polycrystalline β‐SiC specimens were obtained by hot pressing silicon carbide (SiC) powder mixtures containing AlN and Y₂O₃ as sintering additives in a nitrogen atmosphere. The electrical resistivity of the SiC specimens, which exhibited n‐type character, increased with AlN doping and decreased with Y₂O₃ doping. The increase in resistivity is attributed to Al‐derived acceptors trapping carriers excited from the N‐derived donors. The results suggest that the electrical resistivity of the β‐SiC ceramics may be varied in the 10⁴–10^?3 Ω·cm range by manipulating the compensation of the two impurity states. The photoluminescence (PL) spectrum of the specimens was found to evolve with the addition of dopants. The presence of N‐donor and Al‐acceptor states within the band gap of 3C–SiC could be identified by analyzing the PL data.     

Effects of Annealing on Dielectric Loss and Microstructure of Aluminum Nitride Ceramics

The effect of annealing on tan δ and microstructures of aluminum nitride (AlN) ceramics were explored. Yttria was added as a sintering additive to AlN powders, and the powders were pressureless-sintered at 1900°C for 2 h in a nitrogen flow atmosphere. In succession to sintering, AlN samples were annealed at 720, 970 and 1210°C for 2 and 4 h. Very low tan δ values between 2.6 and 6.0 × 10⁻⁴ at 28 GHz were obtained when the AlN samples were annealed for 4 h at all the annealing temperatures.     

Composition and Microstructure of Chemically Vapor-Deposited Boron Nitride, Aluminum Nitride, and Boron Nitride + Aluminum Nitride Composites

The composition and microstructure of dispersed-phase ceramic composites containing BN and AIN as well as BN and AIN single-phase ceramics prepared by chemical vapor deposition have been characterized using X-ray diffraction, scanning electron microscopy, electron microprobe, and transmission electron microscopy techniques. Under certain processing conditions, the codeposited coating microstructure consists of small single-crystal AIN fibers (whiskers) surrounded by a turbostratic BN matrix. Other processing conditions resulted in single-phase films of AIN with a fibrous structure. The compositions of the codeposits range from 2 to 50 mol% BN, 50 to 80 mol% AIN with 7% to 25% oxygen impurity as determined by electron microprobe analysis.     

氧化铝/氮化铝陶瓷显微组织研究

氮化铝具有良好的热学、电学和机械等性能,是理想的电子封装材料和高性能陶瓷基板材料.本文研究了AlN加入量和烧结温度对Al2O3/AlN复相陶瓷相组成和显微组织的影响.结果表明该陶瓷在1400～ 1550℃烧结时,AlN被部分保留,少量氧原子进入AlN晶格,烧结生成4种铅锌矿结构新相,有利于提高复相陶瓷热导率;氮化铝含量和烧结温度的提高,有利于形成大尺寸晶粒.     

Electrical Properties of Laser-Synthesized Aluminum Oxide-Tungsten Oxide Ceramics

Electronic ceramics of the Al₂O₃-WO₃ system were synthesized by using a high-powered CO₂ laser. It was shown that these ceramics can be used as linear thermistor materials. The linear temperature range of the Al₂O₃-WO₃ system was ~200°C, the nonlinear deviation epsilon was <2%, the thermistor constant B was <10³, and the temperature coefficient was between -0.2%/°C and -0.8%/°C. These parameters could be adjusted by changing the composition of the samples and the laser-synthesis parameters. The present study showed that the materials should be encapsulated if they are to be used in an oxidizing atmosphere. The current-voltage curves of the present materials were symmetrical around the coordinate origin, which also is a necessary condition for judging whether or not a thermistor is linear.     

Effects of Preheat-Treated Aluminosilicate Addition on the Phase Development, Microstructure, and Mechanical Properties of Mullitized Porous OBSC Ceramics

Mullitized porous oxidation-bonded SiC (OBSC) ceramics were fabricated with and without preheat-treated aluminosilicate by an in situ reaction-bonding process. The effects of the preheat-treated aluminosilicate on the phase development, microstructure, and mechanical properties of porous SiC ceramics were investigated. With 5.0 wt% preheat-treated aluminosilicate addition, the process of mullitization was significantly promoted. Owing to the enhancement of neck growth by the preheat-treated aluminosilicate, a high flexural strength of 86.9 MPa was achieved at an open porosity of 35.3%, and the porous SiC ceramics maintained good thermal shock resistance. With 5.0 wt% preheat-treated aluminosilicate addition, the average pore size of porous SiC ceramics was enlarged from 2.8 to 4.0 μm. The effects of preheat-treated aluminosilicate content on the oxidation degree of SiC, open porosity, and flexural strength of porous SiC ceramics were also investigated.     

氧化铬对无水泥刚玉浇注料矿相、显微结构和强度的影响

以电熔白刚玉颗粒及细粉为主要原料,以α-氧化铝微粉和水合氧化铝为结合剂,研究了加入氧化铬对无水泥刚玉基浇注料矿相、显微结构和抗折强度的影响.结果表明: 氧化铬1100℃开始向刚玉中固溶,随温度升高固溶程度增加,使浇注料各组分间的结合不断增强,明显提高了浇注料≥1400℃烧后的强度.氧化铬质量含量由0增加到4.0%时,1400℃烧后的热态抗折强度由5.1MPa增大到14.2MPa.1600℃烧后氧化铬通过固相和气相2种传质方式,在刚玉颗粒表面形成环状的固溶带,将刚玉彼此连接在一起,形成了较强的结合.加入质量分数2.0%的氧化铬可使1600℃烧后刚玉基浇注料在1400℃下的热态抗折强度由不含氧化铬的9.7MPa增大到18.6MPa.     

Effects of Aluminum and Zirconia Contents on the Sintering of Reaction-Bonded Aluminum Oxide Ceramics

The reaction-bonded aluminum oxide (RBAO) process is an attractive alternative to the conventional processing of Al₂O₃-based ceramics. The most attractive features of the process are the high strengths, densities, and easy machinability of the green powder compacts, and the low shrinkage and high strengths of the sintered ceramics. These advantages result from the presence of aluminum in the green bodies and are enhanced further with increasing aluminum contents. However, it is apparent that ZrO₂-containing RBAO powders with higher aluminum contents (>45 vol%) are increasingly more difficult to densify, as the start of densification is delayed (shifted to higher temperatures) and the densification rates are decreased. Ultimately, this results in a decrease in the limiting density to which the RBAO ceramic may be sintered. In this study, the cooperative effects of ZrO₂ and aluminum contents on the sintering of RBAO ceramics are discussed in terms of densification behavior and microstructural analysis.     

Effects of Elemental Additives on Electrical Resistivity of Silicon Carbide Ceramics

Effects of various elemental additives on the electrical resistivity of hot-pressed SiC ceramics were studied. The electrical resistivity at room temperature of dense SiC ceramics varied greatly depending on the additives used. SiC ceramics with added Be had an extremely high electrical resistivity of 3 × 10¹²°.cm. On the other hand, SiC ceramics with added B and Al had electrical resistivities of 2 × 10 and 0.8 °cm, respectively. The differences in the electrical resistivity of the dense SiC ceramics were considered to be due to different solubilities of the additives in SiC grains. SiC ceramics with added Be had a low level of impurities in the SiC grains as a result of the low solubility of Be in these grains.     

烧结助剂对氮化硅陶瓷显微结构和性能的影响

氮化硅中氮原子和硅原子的自扩散系数很低，致密化所必需的扩散速度和烧结驱动力都很小，在烧结过程中需采用烧结助剂。烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。有效的烧结助剂不但可以改善氮化硅陶瓷的显微结构，而且可以提高氮化硅陶瓷的高温性能和抗氧化性能。     

The Effect of Transition Metal Oxides on the Strength, Phase Composition, and Microstructure of Cordierite Ceramics

The effect of transition metal oxides and the sintering temperature on the strength parameters of cordierite ceramics synthesized using mechanical activation is investigated. It is established that an introduction of oxide additives improves the strength of ceramics.     

氮化物添加对钛酸钡半导瓷电阻—温度曲线之影响

本文研究了氮化物添加对钛酸钡半导瓷电阻－温度曲线之影响，实验表明，除ＮＢ外ＴｉＮ、Ｓｉ３Ｎ４、ＡｌＮ也可以给出较平坦的电阻极大值，在适当的工艺条件下没有氮化物添加同样可以得到类似结果。     

Electrical Resistivity and Microwave Transmission of Hexagonal Boron Nitride

The dc conductivity of hexagonal boron nitride (BN) and BN-containing composites was measured as a function of temperature up to 2400°C. The results confirm that at high temperatures BN is an intrinsic semiconductor with an energy gap of 0.99 ± 0.06 aJ (6.2 ± 0.4 eV) at T = 0 K. Extrapolated values for the resistivity of BN in the range 2600° to 3000°C are used to analyze the absorption, reflectivity, and transmissivity of a BN window when subjected to microwave radiation under atmospheric reentry conditions. It appears that the transmissivity is of the order of 1 to 10% at these temperatures due mainly to the high conductivity in a very thin, very hot surface layer. The transmissivity can be improved by using a composite made of boron nitride and silica.     

钛镁掺杂对氧化铝陶瓷的相组成、微观形貌及沿面闪络特性的影响

针对高电压绝缘系统中易发生沿面闪络现象的绝缘材料,设计了一种通过掺杂MgO和TiO2来提高氧化铝陶瓷闪络电压的方案.通过高温烧结,在1 500℃下制备了掺杂不同含量TiO2和MgO的氧化铝陶瓷,并研究了钛镁掺杂对氧化铝陶瓷相组成、断面微观结构、介电常数、电阻率和沿面闪络电压的影响.结果 表明,TiO2和MgO的共掺入能降低氧化铝陶瓷的烧结温度,促进氧化铝陶瓷晶粒的均匀性,且在一定程度上提高氧化铝陶瓷的沿面闪络电压.     

Hydrothermal Corrosion and Strength Degradation of Aluminum Nitride Ceramics

The hydrothermal corrosion and strength degradation of aluminum nitride (AlN) ceramics were investigated. The weight gain in AlN ceramics after corrosion occurred because of the formation of boehmite. The reaction kinetics of AlN with water were diffusion controlled through the boehmite product layer. At 180°C, immersion in water caused no strength degradation, and water vapor caused a 20% strength degradation. At 300°C, immersion in water caused a 20% strength degradation, and water vapor caused a 30% strength degradation.     

Development and Microstructural Characterization of High-Thermal-Conductivity Aluminum Nitride Ceramics

The effect of several additives, such as CaC₂, CaO, Y₂O₃, and C, on thermal conductivity of hot-pressed AlN ceramics was investigated. The addition of CaC₂ reductant was found to be useful for achieving high thermal conductivity of 180 W/(m·K) at room temperature. The characterization of AlN ceramics with CaC₂ additive was performed by chemical analysis of Ca, C, and O and microstructural analysis using transmission electron microscopes equipped with an energy-dispersive X-ray analyzer and an electron energy loss spectrometer. The major influence on high thermal conductivity is the disappearance of a thermal barrier caused by oxygen impurities at the grain boundary.     

加入SiC、SiAlON对刚玉-SiC-SiAlON材料组成、结构和力学性能的影响

以刚玉和8%Si粉为原料,1500℃埋碳烧后得刚玉-SiC-SiAlON复合材料.本文研究在加入8%Si粉基础上,另加入0～10%SiC或SiAlON粉对刚玉-SiC-SiAlON复合材料组成、结构和力学性能的影响.结果表明:加入SiC或SiAlON首先可促进Si反应完全,生成更多非氧化物使试样微膨胀量增加,重量增加;同时使试样的显气孔率提高,常温抗折强度降低;加入SiC使试样的结构疏松,高温力学性能下降;但由于生成较多O-SiAlON以及气孔率提高使试样的抗热震性明显提高;加入SiAlON,试样中生成较多的SiC,并有粒状的β-SiAlON存在,可明显提高试样的高温力学性能.     

Effects of Intergranular Phase Chemistry on the Microstructure and Mechanical Properties of Silicon Carbide Ceramics Densified with Rare-Earth Oxide and Alumina Additions

Based on the processing strategy of improving the mechanical properties of liquid-phase-sintered materials by modifying the secondary phase chemistry, four rare-earth oxides (RE₂O₃, RE = La, Nd, Y, and Yb), in combination with alumina, were used as sintering aids for a submicrometer-size β-SiC powder. Doped with 5 vol% RE₂O₃+ Al₂O₃ additives, all specimens were hot-pressed to near full-densities at 1800°C, and they exhibited similar microstructures and grain size distributions. The SiC grains in all specimens revealed a core-rim structure after being plasma-etched, indicating that they were densified via the same solution-reprecipitation mechanism. It was found that a decrease in the cationic radius of the rare-earth oxides was accompanied by an increase in Young's modulus, hardness, and flexural strength of the SiC ceramics, whereas the fracture toughness was improved by incorporating rare-earth oxides of larger cationic radius. The changes in the mechanical properties were attributed to the difference in the chemistry of the intergranular phases in the four ceramics.     

氮化硅加入量对碳化硅-氮化硅-莫来石复相材料氧化层的影响

以莫来石、红柱石、氮化硅、碳化硅为主要原料,在空气气氛下烧成制备碳化硅-氮化硅-莫来石复相材料,并采用XRD、SEM样品进行了表征。结果表明:碳化硅化硅-氮化硅-莫来石复合材料在烧结过程中会在试样表面形成氧化层,分为氧化膜和致密层。氧化膜的主要成分为Si O2,其主要是碳化硅和氮化硅的氧化产物,随着试样中氮化硅含量的增加,试样表面形成的Si O2逐渐增多;试样截面出现致密层,随着试样中氮化硅含量的增加,试样的致密层厚度逐渐减小。     

Effect of Silicon Dioxide on the Thermal Diffusivity of Aluminum Nitride Ceramics

The thermal diffusivity of AlN ceramics was significantly decreased by the addition of SiO₂. The AlN ceramics with 4 wt% SiO₂ could not be densified by pressureless sintering in the temperature range 1400° to 1800°C. The thermal diffusivity of these samples was very low because of their porous structure. The AlN ceramics containing 2, 4, and 8 wt% SiO₂ were densified by hot-pressing and also had low thermal diffusivity. In these samples, the grains of the 27R polytype that resulted from the reaction between AlN and SiO₂ were dispersed, obstructing the conduction of heat. The relation between the amount of 27R polytype and the thermal diffusivity of the AlN ceramics was determined.