Anomalous Magnetic Properties of the Bilayered LaSr2Mn2−z Co z O7 (z=0–0.15) Manganite

The Co-doped bilayered LaSr₂Mn₂O₇ manganite at low Co concentrations (0–0.15) was synthesized by the sol–gel process. The X-ray diffraction (XRD) technique confirms phase formation for all the samples under investigation. The results of ac magnetic susceptibility measurements indicate the effect of Co doping on the magnetic ordering phases. The indications of charge ordering (CO) transitions were observed in all the prepared compounds. The CO magnetic phase transition temperature was observed systematically shift to lower temperatures as the Co concentration increases. There was an anomalous oscillating magnetic behavior in all samples with a few peaks before the CO temperature in the paramagnetic (PM) region so that with an increasing Co doping, the number of peaks and amplitude were decreased. Also, the ac susceptibility measurements were performed in the presence of an applied dc magnetic field to further study of this oscillating behavior.     

Electrical and microstructural properties of Bi2−x Sb x Te and Bi2−x Sb x Te2 foils obtained by the ultrarapid quenching process

This paper is concerned with the feasibility and reproducibility of the ultrarapid quenching process used to fabricate Bi_2–x Sb _x Te and Bi_2–x Sb _x Te₂ alloys for thermoelectric applications. Microstructural properties of the materials, obtained in the shape of foils, were studied concerning the phase analysis, cell parameters, texture, and microstructure observations. The Bi_2–x Sb _x Te alloys were found to have the (2 0 3) texture. The (2 0 4) texture, with an additional (1 1 0) component for x values greater than 0.4, was predominant for Bi_2–x Sb _x Te₂ foils. The electrical properties of these materials were then characterized by measuring the Seebeck coefficient, Hall coefficient, and electrical resistivity. It was found that Bi_2–x Sb _x Te foils changed from n- to p-type for an x-value of about 1.2. A maximum Seebeck coefficient, ||, of 36×10^–6 V K^–1 was measured for Bi₂Te. In the case of Bi_2–x Sb _x Te₂ foils, the change from n- to p-type was observed for an x value of about 1. A maximum Seebeck coefficient, ||, of 32×10^–6 V K^–1, was measured for Bi_1.4Sb_0.6Te₂. Measurements of the temperature-dependent electrical resistivity, Hall and Seebeck coefficients of the foils were carried out and the analysis revealed a semi-metallic behavior.     

Observation of Field-induced Anomaly in High-field Magnetization on a Complex Spin-Driven Multiferroic Compound, LiCu2−z Zn z O2

We performed high-field magnetization measurements in the pulse magnetic fields up to 55 T at low temperatures on a doped LiCu_2?z Zn _z O₂ (z=0.07). When H // c-axis, one anomaly was clearly observed in $\frac{dm}{dH}$ curves at ～9 T. The anomaly broadens as temperature increases and disappears at ～15 K, which is close to the critical temperature of spiral spin phase and the formation of isolated spin-dimer. Interestingly, an additional peak shows up at 4.2 K, indicating a possible boundary at ～5 K. On the other hand, when H // a-axis, one broad anomaly can be distinguish which is centered around 11.8 T. However, this anomaly only appears at T≤5.5 K, which is much lower than 15 K, indicating the origin of this anomaly could be different with those in H // c-axis. It is probably comes from the broken one-dimensional chain and the complex inter-chain interactions.     

Some properties of Sb2Te3−xSex for nonvolatile memory based on phase transition

Composition dependence of properties of Sb₂Te_3–x Se _x in the range 0x<3 were studied using differential thermal analysis and X-ray diffraction. Sb₂Te_3–x Se _x form solid solution for 0<x1.25 and 2.75x<3. A systematic study of crystallization temperature in Sb₂Te_3–x Se _x (0x2.75) thin films prepared by flash evaporation was carried out. In preliminary experiments for some compositions, more than 10³ repetitions between amorphous and crystalline states were attained by the application of electric pulses.     

Te concentration dependent photoemission and inverse-photoemission study of FeSe1−xTex

Abstract

We have characterized the electronic structure of FeSe_1?xTe_x for various x values using soft x-ray photoemission spectroscopy (SXPES), high-resolution photoemission spectroscopy (HRPES) and inverse photoemission spectroscopy (IPES). The SXPES valence band spectral shape shows that the 2 eV feature in FeSe, which was ascribed to the lower Hubbard band in previous theoretical studies, becomes less prominent with increasing x. HRPES exhibits systematic x dependence of the structure near the Fermi level (E_F): its splitting near E_F and filling of the pseudogap in FeSe. IPES shows two features, near E_F and approximately 6 eV above E_F; the former may be related to the Fe 3d states hybridized with chalcogenide p states, while the latter may consist of plane-wave-like and Se d components. In the incident electron energy dependence of IPES, the density of states near E_F for FeSe and FeTe has the Fano lineshape characteristic of resonant behavior. These compounds exhibit different resonance profiles, which may reflect the differences in their electronic structures. By combining the PES and IPES data the on-site Coulomb energy was estimated at 3.5 eV for FeSe.     

Bond Angle Study of Self-compensating Y1−x Ca x Ba2−x La x Cu3O z System

Single-phase samples of a self-compensating Y_1?x Ca _x Ba_2?x La _x Cu₃O _z system were synthesized through a solid-state reaction method with x<0.4. The structure of all samples were characterized by X-ray diffraction and refined by the Rietveld method. Superconducting properties have been investigated by the DC magnetization measurement. The critical temperature (T _c ) decreases evidently with the increment of x although the carrier concentration remains constant in the samples for different doping level. Careful study of the chemical bonds in the crystalline lattice demonstrates that the T _c is closely correlated to four pairs of bond angles in the unit cell. The analysis indicates that crystalline structure is one of the important factors to high-T _c superconductivity, and its influence is independent of the carrier concentration.     

Infrared laser-induced piezo-optics in Sb2Se3− x Te x –BaCl2–PbCl2 glass

IR-induced elasto(piezo)-optical (PO) triggering effects in complex chalcogenide glasses with general formula Sb₂Se_{3- x} Te _x ?BaCl₂–PbCl₂ (with x = 0.2, 0.8, 1.3) were found under the influence of a pulsed 190 ns CO₂ laser with wavelength 10.6 μm. It was shown that increasing x leads to an increase of the PO efficiency. This is caused by appearance of enhanced excited dipole moments due to variations of polarizability. Simultaneously variations of the PO versus pump–probe delay times in the nanosecond time range were explored. A substantial role of the electron–phonon subsystem in the observed IR-induced PO triggering is demonstrated. The investigations were done both for diagonal as well as off-diagonal PO tensor components.     

Electrical properties of In/Yb/n-Hg1 − x Cd x Te contacts

The specific contact resistance, _c, and the modified sheet R _sk, of In/Hg_{1 – x} Cd _x Te contacts incorporating a Yb diffusion barrier were measured as a function of the layer thickness and composition (x = 0.32–0.65). Significant increases in _c, were evident only for x 0.56 and at Yb thicknesses between 2.5 and 6.0 nm, depending on the x-value. Analytical examination of the interfaces by Rutherford backscattering spectrometry (RBS) also showed a progressive reduction in the extent of inward diffusion of In with increasing thickness of the Yb interlayer.     

Cation composition variation observed in Y1Ba2Cu3O7−z

The cation concentration ratio in the individual grains (1 to 25 μm) of four Y₁Ba₂Cu₃O_7−z pellets was investiga spectroscopy. A spread in the cation composition was observed even in a sample showing a narrow superconducting transition. The concentrations of Y, Ba and Cu were in the ranges 12–20, 30–35 and 48–53 at%, respectively. It is, therefore, likely that the Y₁Ba₂Cu₃O_7−z structure covers a finite area on the YO_1.5-BaO-CuO phase diagram.     

Crystallization kinetics of bulk amorphous (Se65Te35)100−x Sb x

Kinetic studies of crystallization in (Se₆₅Te₃₅)_100–x Sb _x with 0x10 glasses, using the differential scanning calorimetry technique, were performed. Crystallization enthalpy data, H _c, were collected as a function of composition. The crystallization data were examined in terms of recent analyses developed for non-isothermal crystallization studies, to arrive at E _c. The results indicate bulk nucleation and crystallization with two- and three-dimensional growth, respectively, for the (Se₆₅Te₃₅)₉₈Sb₂ and (Se₆₅Te₃₅)₉₂Sb₈ glass composition.     

Thermoelectric properties of Bi2Te3-Sb2Te3 single crystals in the range 100–700 K

The electrical conductivity, thermoelectric power, and thermal conductivity of Bi₂Te₃-Sb₂Te₃ crystals grown by the floating-crucible technique were measured in the temperature range from 100 to 700 K. The thermoelectric figure of merit of the crystals was evaluated. The effect of crystal composition on these properties was analyzed.     

Structural and optical properties of Cd x Zn(1 − x)Te thin films

Seven Cd _x Zn_{(1 ? x} Te solid solutions with x = 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0 were synthesized by fusing stoichiometric amounts of CdTe and ZnTe constituents in silica tubes. Each composition was used in the preparation of a group of thin films of different thicknesses. Structural investigation of the obtained films indicates they have a polycrystalline structure with predominant diffraction lines corresponding to (111) (220) and (311) reflecting planes, which can be attributed to the characteristics of growth with the (111) plane. The optical constants (the refractive index n, the absorption index k, and the absorption coefficient α) of Cd _x Zn_{(1 \s -x)} Te thin films were determined in the spectral range 500–2000 nm. At certain wavelengths it was found that the refractive index, n, increases with increasing molar fraction, x. It was also found that plots of α² (hv) and α^1/2 (hv) yield straight lines, corresponding to direct and indirect allowed transitions respectively obeying the following two equations: $$\begin{gathered} E_g^d = 1.583 + 0.277x + 0.197x^2 \hfill \\ E_g^{ind} = 1.281 + 0.111x + 0.302x^2 \hfill \\ \end{gathered}$$      

Superconductivity and spin correlation study by Fe3+ - ESR in (La1−xSrx)2Cu1−yFeyO4−z

Fe³⁺-ESR measurements are carried out for the samples of (La_1–xSr_x)₂Cu_1–yFe_yO_4–z. Peak-peak width H_pp of the signals decreases with falling temperature until minimum value and rises sharply with further decreasing temperature, which is approximated by H_pp = C₀ +C₁/T + BT. The H_pp behavior at high temperature and at low temperature can be analyzed by Korringa mechanism and slowing down of Fe₃₊ spin fluctuation, respectively. From the analysis of coefficient B's of Korringa terms, C₀ and g-shift, it is revealed that the magnetic interaction of Fe³⁺ with hole carriers and Ce²⁺ spins depends strongly on hole density.     

Electrical conductivity of Cux(As0.4Se0.3Te0.3)100−x glasses

Results of the dc electrical conductivity () measurements (from 90 to 420 K) on 15 compositions of the Cux(As0.4 Se0.3 Te0.3)100–x glasses (x from 0 to 30) are presented. Similar to that observed [1] in the composition dependencies of the mean atomic volume (V) and the glass transition temperature (Tg) of these glasses, it is possible to delineate three regions in the composition dependence of the of these glasses. (i) For addition of Cu up to 1 at %, the register a decrease compared to that of the parent As0.4Se0.3Te0.3 glass. (ii) For Cu > 1 at %, the conduction activation energy (E) and the pre-exponential factor (C) decrease, with a concomitant increase in (at 250 K) by about six orders of magnitude. (iii) Both E and C show saturation for Cu > 23 at %. The -composition data are examined using the model developed earlier [1] to understand, the V (and Tg)-composition dependencies of these glasses.     

Effects of Se substitution on the thermoelectric performance of n-type Co4Sb11.3Te0.7−xSex skutterudites

A series of double-substituted Co₄Sb_11.3Te_0.7?xSe_x skutterudites have been fabricated by combining the solid state reaction and the spark plasma sintering method, and the effects of Se substitution on the thermoelectric properties are characterized by measurements of the electrical conductivity, the Seebeck coefficient and the thermal conductivity in the temperature range of 300–800 K. Doping Se into the Co₄Sb_11.3Te_0.7?xSe_x matrix suppresses the carrier concentration, and the electrical conductivity actually decreases with the Se content. However, moderate Se doping is effective in enhancing the thermoelectric performance of the n-type Co₄Sb_11.3Te_0.7?xSe_x, because of the resulted dramatically decreased thermal conductivity. Analyses indicate that the heightened point-defect scattering induced by Se doping together with the electron–phonon scattering induced by Te doping is responsible for the reduction of lattice thermal conductivity of these compounds.     

Thermoelectric Properties of nGeTe · mSb2Te3Layered Compounds

The Hall coefficient, electrical conductivity, and thermoelectric power of Ge₃Sb₂Te₆, Ge₂Sb₂Te₅, GeSb₂Te₄, and GeSb₄Te₇were measured over a wide temperature range (R _Hand from 77 to 800 K and Sfrom 90 to 450 K). The carrier concentration was varied via compositional changes within the homogeneity regions of the compounds. All of the materials studied were found to be p-type. Some of the alloys have a low lattice thermal conductivity and are, therefore, candidate p-type thermoelectric materials. The temperature-dependent hole mobility data suggest that both acoustic phonons and point defects contribute to the scattering of charge carriers at low temperatures.     

The mechanisms of yield and plastic flow in HgTe and Cd x Hg1−x Te

Single crystals of HgTe and Cd _x Hg_1–x (0.18<x<0.30), oriented for single slip, have been deformed in four-point bending at strain rates 10^–4 sec^–1 and temperatures from –11 to +84° C for HgTe, and 20 to 195° C for Cd _x Hg_1–x Te. At the lowest temperatures, the stress-strain curve exhibits a sharp yield relaxation and subsequent zero work hardening regime, as commonly observed for other semiconductors. Experiments show that the yielding mechanism is that proposed by Johnston and Gilman for LiF. Possible explanations for the post-yield zero work hardening phenomenon are discussed. The influence of composition, temperature and strain rate on the stress-strain behaviour are reported. At 20° C, the upper and lower yield stresses ( _uy and _1y ) increase with increasingx in qualitative agreement with our earlier hardness results. For Cd_0.2Hg_0.8Te, _1y varies with temperature,T, at a strain rate of 10^–4 sec^–1, according to _1y exp (Q/kT) whereQ is 0.16 eV. For HgTe the comparable value is 0.11 eV. Atx=0.25 and constant temperature, _1y depends on strain rate as _1y ^1/n wheren is 4. The stress level for deformation of Cd_0.2Hg_0.8Te at 10^–4 sec^–1 and 20° C is 2–3 kg mm^–2, comparable with that for InSb at 300° C or Si at 1000° C. Strain rate cycling tests on Cd _x Hg_1–x Te give values of activation volumeV* around 10b³ at 20° C, independent of plastic strain (up to 2–3%), suggesting that deformation in these alloys is controlled by the Peierls mechanism, as observed in other II–VI compounds.