多道次热辊轧制Al/Mg层状复合板材结合面特性

为研究热辊轧制对层状复合材料组织性能的影响,本文采用多道次热辊轧制工艺制备了Al/AZ31B/Al多层复合板材,通过OM、XRD、SEM及设计模具测试,分析了不同压下率、退火温度对复合板材界面微观形貌和结合性能的影响规律。结果表明：热辊轧制兼具变形和促进扩散层的形成双重作用,大压下率复合板材结合界面形成不连续的扩散层。随着压下率增加,结合面由平直逐渐呈显著的“波浪”型,相近的剪切坡度成对出现且角度相近,过大压下率导致异质材料变形过程难以协调,镁层厚度方向减薄明显的部分区域出现裂纹。退火后Al/Mg结合界面形成了更有效的冶金结合,随着退火温度的升高,扩散层厚度不断增加且有分层现象,金属间化合物为Al₃Mg₂(β相)和Mg₁₇Al₁₂(γ相)。剥离形貌为准解理断裂,退火温度过高时,板条状的金属间化合物变得更加粗大,两金属板材会从金属间化合物层开裂。在压下率为60%～70%,退火温度为200～250℃时有利于热辊轧制复合板材的结合强度提升。     

双屏蔽(B4C-W)/6061Al层状复合板设计与性能

基于B₄C和W良好的屏蔽中子和γ射线性能,采用6061铝合金作为基体,设计了一种新型双屏蔽(B₄C-W)/6061Al层状复合材料,通过放电等离子烧结后加热轧制成板材,对制备的复合材料微观组织和力学性能进行了研究。结果表明,屏蔽组元B₄C和W颗粒均匀地分布在6061Al基体中,层界面、B₄C/Al、W/Al异质界面之间结合良好,无空隙和裂纹。在颗粒与基体界面处形成扩散层,扩散层的厚度约为6 μm (W/Al)和4 μm (W/Al)。轧制态的(B₄C-W)/6061Al层状复合板的屈服强度(109 MPa)和极限抗拉强度(245 MPa)明显优于烧结态的复合材料,但断裂韧性降低。强度提高的原因主要是轧制后颗粒的二次分布、均匀性及界面结合强度提高,基体合金的晶粒尺寸减小,位错密度增加。层状复合板的断裂方式为基体合金的韧性断裂和颗粒的脆性断裂。      

累积叠轧制备的Cu/Al/Cu复合板材金属间化合物层演变及其对力学性能影响研究

目的 研究在不同温度条件下Cu(商业纯铜)/Al(AA1060)/Cu复合板材累积叠轧过程中界面金属间化合物层对材料性能的强化规律.方法 在不同温度条件下(350～500℃)累积叠轧制备Cu/Al/Cu层状复合板材,深入分析其界面金属间化合物层形状、元素分布及其对力学性能的影响规律.结果 金属化合物层的厚度随着轧制温度的升高逐渐增加,且随着轧制温度的不同,形貌呈现很大的差异.当轧制温度为350℃和400℃时,金属间化合物相对平整.轧制温度升高到450℃时,金属间化合物层呈现锯齿形,使该工艺条件下加工的材料同时具有较好的强度(273 MPa)和塑性(4.06％).结论 制备Cu/Al/Cu层状复合材料过程中,通过优化轧制温度这一重要轧制参数,能实现强度和塑性的综合提高.     

冷轧成形钛/钢层状复合板界面结合强度的影响因素

采用冷轧复合法制备钛/钢层状复合板,研究轧制压下率、轧制道次、表面粗糙度、原材料状态和轧制速率对钛/钢层状复合板界面结合强度的影响。结果表明:界面作用力和轧制力对界面的作用时间是影响钛/钢层状复合板界面结合强度的主要因素。轧制压下率、表面粗糙度和原材料状态通过影响界面作用力来影响钛/钢层状复合板的界面结合强度;轧制速率通过影响轧制力对界面的作用时间来影响钛/钢层状复合板的界面结合强度;钛/钢层状复合板的冷轧复合效果与轧制道次无关,只有单道次轧制压下率超过临界轧制压下率时,才能实现冷轧复合。     

冷轧成形钛/钢层状复合板界面结合强度的影响因素EI北大核心CSCD

采用冷轧复合法制备钛/钢层状复合板,研究轧制压下率、轧制道次、表面粗糙度、原材料状态和轧制速率对钛/钢层状复合板界面结合强度的影响。结果表明:界面作用力和轧制力对界面的作用时间是影响钛/钢层状复合板界面结合强度的主要因素。轧制压下率、表面粗糙度和原材料状态通过影响界面作用力来影响钛/钢层状复合板的界面结合强度;轧制速率通过影响轧制力对界面的作用时间来影响钛/钢层状复合板的界面结合强度;钛/钢层状复合板的冷轧复合效果与轧制道次无关,只有单道次轧制压下率超过临界轧制压下率时,才能实现冷轧复合。     

梯度三明治银基钎料复合界面组织及生长动力学研究

针对梯度钎料轧制过程中易出现撕裂的问题,借助扫描电镜、EDS 能谱仪、万能力学试验机等手段研究气保护热压复合BAg40CuZnNi/CuMn2/BAg40CuZnNiMnCo梯度三明治复合钎料均匀化退火工艺对界面扩散组织和性能的影响规律,探明复合界面生长行为,为优化退火工艺提供技术参考。研究结果表明:热压复合界面扩散层主要为富铜相、富银相;随均匀化退火时间的延长,界面两侧元素不断发生互扩散,界面结合强度有所下降,当保温时间在5 ~18 h时强度稳定在180 MPa左右。继续延长时间,界面扩散层厚度超过20 μm,脆性的AgZn₃相尺寸不断粗化增大,强度由初始态的260 MPa下降到100 MPa左右,导致复合钎料在轧制过程中出现开裂。退火不同时间后,界面扩散层厚度逐渐增加,其趋势符合抛物线法则;当退火温度达823 K,保温18 h时,扩散层厚度由原来的12.5 μm增加到22.4 μm;运用Arrhenius方程计算得出界面扩散层生长激活能为20.810 8 kJ/mol,并获得其生长动力学模型,通过此模型可对扩散层厚度进行初步计算。     

基于界面影响区特征的铜/铝复合板损伤行为研究

目的 基于Cohesive–GTN模型建立考虑了界面影响区的铜/铝复合板有限元损伤模型,研究铜/铝复合板塑性变形的损伤演化行为,精细化分析金属层状复合板的损伤机理。方法 采用拉伸试验机、显微硬度计、EDS能谱仪、扫描电镜等测试手段,结合试验模拟,将获取的参数输入ABAQUS有限元软件中并对模拟结果进行研究分析。结果 基于试验法确定了界面区的宽度约为3 μm,铜侧界面影响区宽度约为50 μm,铝侧界面影响区宽度约为100 μm。当塑性变形量逐步增加时,铜层材料较早发生损伤断裂,之后铝层进入集中失稳阶段,主裂纹贯穿铝层直至复合板材料整体发生断裂。此外,各异质层材料内部孔洞的体积分数不断增大,达到材料失效时的孔洞体积分数,材料发生损伤失效。结论 基于Cohesive–GTN模型建立考虑了界面影响区的铜/铝层状复合板有限元损伤模型,并结合试验验证了模型的合理性和可靠性。在考虑了界面影响区的基础上,研究了铜/铝复合板塑性变形损伤演化行为,揭示了铜/铝复合板塑性变形损伤机制,为后续金属复合板的损伤分析提供更为精细化的建模方法。     

Mg/Zn/Al瞬间液相过冷连接界面的组织与性能研究

采用瞬间液相过冷连接方法对AZ31镁合金/锌中间层/5083铝合金进行连接,利用SEM、XRD、拉伸实验机和微观硬度计对结合界面的微观组织、力学性能进行了表征。结果表明,以锌作中间层,采用瞬间液相过冷连接可以实现AZ31镁合金与5083铝合金的有效连接,接头的最高抗拉强度可以达到38.5MPa,随着低温扩散保温时间的延长,扩散层厚度随之增加,接头的抗拉强度也随之升高;接头的拉伸断口属于脆性断裂,结合界面形成了MgZn2和少量的Mg17Al12金属间化合物;结合界面的微观硬度最高达170。     

累积叠轧纯Mg/ZK60镁合金层状金属复合材料的组织与性能

采用累积叠轧技术在300℃下制备了纯Mg/ZK60 Mg合金多层复合板材。经过初始复合后,Mg层和ZK60层晶粒明显细化,随着循环次数的增加,Mg/ZK60复合板材两组元晶粒细化并不明显。两种组元的层厚随着循环次数的上升而逐渐降低,两次循环后Mg/ZK60复合板材出现波浪状组织。累积叠轧后,Mg/ZK60复合板材中Mg层和ZK60层呈现典型的轧制织构类型,{0001}基面均向轧制方向发生轻微偏转。Mg/ZK60复合板材的强度及延伸率均介于轧制态的ZK60板与Mg板之间,并随着循环次数的增加逐渐提高。Mg/ZK60复合板材室温阻尼性能和高温阻尼性能均介于纯Mg与ZK60之间,而高温下Mg/ZK60复合板材的高温阻尼则与ZK60板材变化趋势相类似。      

铸态AZ31镁合金板材等温轧制工艺及组织性能研究

为研究铸态AZ31镁合金轧制工艺及轧制后组织性能,通过试验得到不同道次和变形量对铸态AZ31镁合金板材显微组织和力学性能的影响规律,并采用扫描电子显微镜研究了轧制后板材组织.结果表明,铸态AZ31镁合金板材经等温4道次、等变形量轧制后,板材厚度由20mm变化到4.8 mm,抗拉强度和屈服强度分别达到275 MPa和18...     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.