0.13 μm CMOS 60 dB SFDR的8 bit 250 MS/s模数转换器

论述了一种高速度低功耗的8位250 MHz采样速度的流水线型模数转换器(ADC).在高速度采样下为了实现大的有效输入带宽,该模数转换器的前端采用了一个采样保持放大器(THA).为了实现低功耗,每一级的运放功耗在设计过程中具体优化,并在流水线上逐级递减.在250 MHz采样速度下,测试结果表明,在1.2 V供电电压下,所有模块总功耗为60 mw.在19 MHz的输入频率下,SFDR达到60.1 dB,SNDR为46.6 dB,有效比特数7.45.有效输入带宽大于70 MHz.该ADC采用TSMC 0.13μm CMOS 1P6M工艺实现,芯片面积为800 μm×700μm.     

A 12-bit 10-MS/s SAR ADC with a weighted sampling time technique applied to C-DAC

This paper presents a low power 12-bit 10-MS/s successive approximation register (SAR) analog-to-digital convert (ADC) for bio-signal signal processing in wearable sensor systems. A weighted sampling time technique applied to a capacitor digital to analog converter (C-DAC) is employed to reduce the power consumption of the conventional SAR ADC with minimum performance sacrifice. The proposed technique helped reduce its energy consumed by MSB, MSB-1, MSB-6, and MSB-7 capacitors by more than 40% compared with that of the conventional C-DAC. Another technique, a voltage scaling method is also employed to lower the power supply voltage from 1.2 to 0.6 V for all the digital logics except the output registers, such that it results in a power reduction of 70%. The proposed ADC is implemented with the standard CMOS 65 nm 1-poly 6-metal n-well process. The ADC achieves DNL/INL of?±?1.2LSB/?±?1.5LSB, ENOB of 10.3-b, power consumption of 31.2 μW, and Walden FoM of 2.7fJ/step.

     

一种10位200 kS/s 65 nm CMOS SAR ADC IP核

该文基于65 nm CMOS低漏电工艺,设计了一种用于触摸屏SoC的8通道10位200 kS/s逐次逼近寄存器型(Successive Approximation Register,SAR) A/D转换器(Analog-to-Digital Converter,ADC) IP核。在D/A转换电路的设计上,采用7MSB (Most-Significant-Bit) + 3LSB (Least-Significant-Bit) R-C混合D/A转换方式,有效减小了IP核的面积,并通过采用高位电阻梯复用技术有效减小了系统对电容的匹配性要求。在比较器的设计上,通过采用一种低失调伪差分比较技术,有效降低了输入失调电压。在版图设计上,结合电容阵列对称布局以及电阻梯伪电阻包围的版图设计方法进行设计以提高匹配性能。整个IP核的面积为322m267m。在2.5 V模拟电压以及1.2 V数字电压下,当采样频率为200 kS/s,输入频率为1.03 kHz时,测得的无杂散动态范围(Spurious-Free Dynamic Range,SFDR)和有效位数(Effective Number Of Bits,ENOB)分别为68.2 dB和9.27,功耗仅为440W,测试结果表明本文ADC IP核非常适合嵌入式系统的应用。     

CMOS图像传感器中RSD A/D转换器的设计与实现

提出了CMOS图像传感器中RSD A/D转换器的设计方法.基于冗余符号数(RSD)算法,RSD A/D转换器降低了对比较器的性能要求.并且全差分的模拟信号处理用以改进抗噪声度,信噪比和系统的动态范围.RSD A/D转换器是基于90 nm CMOS工艺实现的,测试结果表明它的微分非线性误差(DNL)为±1 LSB,积分非线性误差(INL)为±1.5 LSB,总的未调整误差(TUE)为-3 LSB～1 LSB,功耗约为20 mW.     

Spatial Quantized Analog-to-Digital Conversion Based on Optical Beam-Steering

A novel optical spatial quantized analog-to-digital converter (ADC) is presented and the performance enhancements through employing this architecture are analyzed theoretically. A high-speed low-jitter ADC sampling clock is provided by a mode-locked laser. A high sampling rate is maintained by avoiding any speed-limiting conversion from optical to electrical domain in an all-optical quantization technique. A high quantization bandwidth is achieved by employing the all-optical quantization technique, benefiting from the high bandwidth characteristics of optical modulation. A high ADC resolution is obtained by using a single-channel quantization configuration and detecting a single image at each sampling step. A high power efficiency is achieved by extracting some portions of the required power from the analog electrical signal and optical sampling clock, directly. Various ADC-resolution limiting factors including the ambiguity of photodetectors, jitter of the optical sampling-clock, the limited beam deflector bandwidth, dispersion, phase modulator nonlinearity/mismatch, noise, and crosstalk have been identified and the contribution of each effect has been discussed.      

Analog to digital converter for high density neural signal recording front-end in 90 nm

High-fidelity recording of neural signals requires varying levels of signal gain to capture low-amplitude single-unit activity in the presence of high-amplitude population activity. A floating-point approach has been used to widen the dynamic range of analog-to-digital converters (ADC) designed for this application. In this paper we present an ADC, designed for multi-channel, portable neural signal recording systems. To achieve low power consumption, small die area and wide dynamic range, an ADC based on a time-based algorithm, combined with a floating-point pipelined structure has been designed and simulated. A conventional variable-gain amplifier (VGA) stage has been eliminated in favor of a reference-current in a time-based ADC architecture. The 12-b pipelined time-based floating-point ADC has been designed with a 7-b mantissa and an exponent that provides an additional 5 bits of dynamic range. The mantissa is determined by a uniform 7-b pipelined time-based analog to digital converter. The ADC chip was designed and simulated in a 90 nm CMOS process, which occupies an active area of 360 μm × 550 μm, and consumes 7.8 μW at 1.2 V in full-scale conversion.     

A low-power 10-bit 250-KSPS cyclic ADC with offset and mismatch correction

A low power 10-bit 250-k sample per second(KSPS) cyclic analog to digital converter(ADC) is presented. The ADC’s offset errors are successfully cancelled out through the proper choice of a capacitor switching sequence.The improved redundant signed digit algorithm used in the ADC can tolerate high levels of the comparator’s offset errors and switched capacitor mismatch errors.With this structure,it has the advantages of simple circuit configuration,small chip area and low power dissipation.The cyclic ADC manufactured with the Chartered 0.35μm 2P4M process shows a 58.5 dB signal to noise and distortion ratio and a 9.4 bit effective number of bits at a 250 KSPS sample rate.It dissipates 0.72 mW with a 3.3 V power supply and occupies dimensions of 0.42×0.68 mm~2.     

A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS

This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-V_t MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process.     

基于16位SAR模数转换器的误差校准方法

为了实现较高精度(16位及更高)的逐次逼近(SAR)ADC,提出了一种误差自动校准技术。考虑到芯片面积、功耗和精度的折中,采用了电荷再分配分段电容DAC结构,并采用准差分输入方式提高ADC的信噪比。为了消除电容失配引入的误差,提出了一种误差自动校准算法,利用误差校准DAC阵列对电容失配误差进行量化并存储在RAM中,在AD转换过程中实现误差消除。     

光学Sigma-Delta模数转换器的研究进展

采用光学模数转换技术已经成为高转换速率、高比特精度模数转换器(ADC)的发展趋势.光学Sigma-Delta ADC作为一种光学ADC,具有转换精度高和模拟电路简单等显著优点.介绍了光学Sigma-Delta ADC的基本原理,详细阐述了几种典型的光学Sigma-Delta ADC的系统结构,对不同结构的光学Sigma-Delta ADC的优缺点进行了归纳总结.     

A 0.8-μW window SAR ADC with offset cancellation for digital DC–DC converters

This letter presents the design of a window successive approximation (SAR) analog-to-digital converter (ADC) using an ultra-fast, offset-cancelled auto-zero comparator for digital DC–DC converters. It is designed in a standard CMOS 0.18 μm process. The ADC has a dynamic reference voltage range to reduce power consumption. The auto-zero scheme of the comparator is realized internally with a preamplifier stage and a latch stage. Post-layout simulation shows that the response time of the comparator from low-to-high and high-to-low is 3.78 ns and 2.47 ns, respectively. The resolution of the proposed window SAR ADC is 7.5 mV. The ADC is fabricated as part of a digital DC–DC converter integrated circuit and measurement results show that an average power consumption of 0.8 μW is achieved. The transient time of the DC–DC converter is within 150 ns for a load current change of 495 mA.     

An 8-bit, 10 kHz, 5.1 μW, 0.18 μm CMOS SAR ADC for RFID applications with sensing capabilities

An 5.1 μW, 1.8 V, 8-bit, successive approximation (SAR) analog-to-digital converter (ADC) using 10 kHz clock was designed and fabricated in a 0.18 μm CMOS technology for passive UHF radio frequency identification (RFID) applications. The ADC utilises a resistive digital to analog converter (DAC). The ADC can operate with low power consumption. The proposed comparator with cascode active load can offer large gain and can operate at a low supply voltage. The measured total power consumption is 5.1 μW at a 10 kHz input clock with a 1.8 V single supply, and 0.5 μW with 970 mV supply.     

A low-power 8-b 1 3.5-MHz video CMOS ADC for visiophony ISDNapplications

A half-flash, subranging, 8-b, 13.5-MHz, video ADC (analog-to-digital converter) using overlapped architecture that combines the advantages of both flash and half-flash converters is described. Its conversion rate is that of a flash, without any multiplexing and with a low number of comparators. Its low power consumption and the small silicon area required for its implementation enable it to be integrated in mixed digital/analog circuits such as a video acquisition circuit devoted to visiophony applications. It has been manufactured using a CMOS 1-μm technology with two polysilicon and two metallization layers     

A CMOS 6-b, 400-MSample/s ADC with error correction

A CMOS 6-bit 400-MSample/s (MS/s) flash analog/digital converter (ADC) using an additional comparator for background autozeroing has been developed. Additionally, an error-correction technique detects and corrects errors after thermometer code zero-to-one transition detection, improving the error rate from 10E-4 to 10E-8 at 400 MS/s with a 200-MHz analog input. This ADC was fabricated in a single-poly, double-metal, 0.35-μm CMOS technology and occupies 1.6×0.75 mm. The power consumption is 190 mW at 400 MS/s with 3.0 V power supply. This ADC has a two-clock cycle latency     

Systematic design of wideband ΔΣ modulators for WiFi/WiMAX receivers

Modern multi-standard receivers in deep-submicron technologies pose significant design challenges on the analog baseband. Moving this analog filtering to the digital domain simplifies the design, yielding a process-scalable implementation. However, analog-to-digital converter (ADC) specifications now become more stringent and must be obtained by comprehending the standard and the system. Assuming a receiver NF of 5.96 dB and SNR degradation of 0.36 dB by the ADC, the proposed dual-mode WiFi/WiMAX receiver attains an input sensitivity of −74 dBm (20 MHz channel bandwidth). To accommodate the high dynamic range and the anti-alias rejection needed for the system, a Delta-Sigma (ΔΣ) ADC is proposed. Single-loop and Multi-Stage Noise-Shaping (MASH) architectures that achieve a SNR of 69 dB at a low oversampling ratio (OSR) of 8 for a conversion bandwidth of 40 MHz (108 Mbps, OFDM) are investigated at system level. Based on thermal noise, harmonic distortion, and power tradeoffs, a ΔΣ ADC design that meets the design specifications is presented.     

A 16-bit cascaded sigma-delta pipeline A/D converter

A low-noise cascaded multi-bit sigma-delta pipeline analog-to-digital converter （ADC） with a low over-sampling rate is presented. The architecture is composed of a 2-order 5-bit sigma-delta modulator and a cascaded 4-stage 12-bit pipelined ADC, and operates at a low 8X oversampling rate. The static and dynamic performances of the whole ADC can be improved by using dynamic element matching technique. The ADC operates at a 4 MHz clock rate and dissipates 300 mW at a 5 V/3 V analog/digital power supply. It is developed in a 0.35μm CMOS process and achieves an SNR of 82 dB.     

An 8-bit 12.5-GSample/s SiGe ADC

This paper describes the design of a high-speed 8-bit Analog to digital converter (ADC) used in direct IF sampling receivers for satellite communication systems in a 0.25 μm, 190 GHz SiGe BiCMOS process. A high resolution front-end track-and-hold amplifier (THA), a low impedance reference and interpolation resistive ladder and high resolution comparators enable the ADC to achieve good performance for input frequencies of up to one-quarter of the sampling rate. The final post layout simulated system features an ENOB of 7.2-bits at an input frequency of 3.125 GHz and a sampling rate of 12.5 GS/s with a FOM of 12.9 pJ per conversion. Both DNL and INL are within 0.5 and 1 LSB, respectively. The converter occupies 10 mm² and dissipates 14 W from a 3.3 V supply. The THA and the comparator, as the most critical building blocks affecting the overall performance of the ADC, were implemented experimentally and fully characterized in order to verify their performance and to ascertain the possibility of implementing the complete ADC. The THA occupies an area of 0.5 mm². It features a SNDR of 47 dB or 7.5-bits ENOB for a 3 GHz bandwidth, a hold time of 21 ps with a droop rate of 11 mV/80 ps and a power dissipation of 230 mW from a 3.3 V supply. The comparator occupies an area of 0.38 mm² and exhibits an input sensitivity of ±2 mV, an input offset voltage of 1.5 mV, latch and recovery times of 19 and 21 ps, respectively, and a power dissipation of 150 mW from a 3.3 V supply. The experimental results are in good agreement with simulation and expected specifications and indicate that both circuits are suitable for the implementation of the ADC and help to validate that the 8-bit 12.5 GS/s ADC is feasible for implementation in a 0.25 μm SiGe process.     

A 12-b 600 ks/s digitally self-calibrated pipelined algorithmic ADC

This paper discusses fully digital error correction and self-calibration which correct errors due to capacitor mismatch, charge injection, and comparator offsets in algorithmic A/D converters. The calibration is performed without any additional analog circuitry, and the conversion does not need extra clock cycles. This technique can be applied to algorithmic converter configurations including pipelined, cyclic, or pipelined cyclic configurations. To demonstrate the concept, an experimental 2-stage pipelined cyclic A/D converter is implemented in a standard 1.6-μm CMOS process. The ADC operates at 600 ks/s using 45 mW of power at ±2.5 V supplies. The active die area excluding the external logic circuit is 1 mm². Maximum DNL of ±0.6 LSB and INL of ±1 LSB at a 12-b resolution have been achieved     

A 12-bit 500-ns subranging ADC

A subranging 12-b ADC (analog/digital converter) with analog and digital correction has been developed in a high-speed bipolar process. A conversion is performed in four stages. The settling requirement of the subtraction digital/analog converters is postponed until the final stage, resulting in a conversion time of 500 ns. The use of Ti-W fuse-link based trimming permits the critical circuit components to be adjusted at the wafer level with only a few pads. The circuit has been implemented in a die area of 25 mm² and dissipates 650 mW     

An energy-efficient reconfigurable analog-to-digital converter for orthopedic implants

This paper presents a pipelined analog to digital converter (ADC) with reconfigurable resolution and sampling rate for biomedical applications. Significant power saving is achieved by turning off the sample-and-hold stage and the first two pipeline stages of the ADC instead of turning off the last two stages. The reconfiguration scheme allows having three modes of operation with variable resolutions and sampling rates. Reconfigurable operational transconductance amplifiers and an interference elimination technique have been employed to optimize power-speed-accuracy performance in biomedical instrumentation. The proposed ADC exhibits a 56.9 dB SNDR with 35.4 mW power consumption in 10-bit, 40 MS/s mode and 49.2 dB SNDR with only 7.9 mW power consumption in 8-bit, 2.5 MS/s mode. The area of the core layout is 1.9 mm² in a 0.35 μm bulk-CMOS process.