基于低温键合技术制备SOI材料

通过N+等离子体对Si片以及SiO2片表面活化,进行直接键合,研究了键合强度与退火温度的关系.研究结果表明退火温度从100℃升高到300℃的过程中,键合强度明显加强;高于300℃,键合强度略有增加,但不明显.结合N+等离子体处理技术和Smart-Cut技术制备出SOI结构,顶层硅缺陷密度表征表明在500℃退火后可得到较好的缺陷密度.该研究结果提供了一种SOI低温技术.     

基于低温键合技术制备SOI材料

通过N 等离子体对Si片以及SiO2片表面活化,进行直接键合,研究了键合强度与退火温度的关系.研究结果表明退火温度从100℃升高到300℃的过程中,键合强度明显加强;高于300℃,键合强度略有增加,但不明显.结合N 等离子体处理技术和Smart-Cut技术制备出SOI结构,顶层硅缺陷密度表征表明在500℃退火后可得到较好的缺陷密度.该研究结果提供了一种SOI低温技术.     

硅／硅键合界面的正电子湮没分析

硅/硅键合是硅功率器件,功率集成电路以及集成传感器衬底制备新技术之一。键合界面的缺陷直接影响器件性能。我们采用正电子湮没技术对N/N~+硅键合片界面缺陷进行了研究。由正电子湮没谱可知:键合引入了界面缺陷,但其缺陷密度小于热扩散形成的N~-/N~+片而引入的缺陷。界面缺陷主要是一些复杂的空位团和微型空洞组成。而且在不同的退火温度下,缺陷状态不同,在高于键合温度下退火。可使键合片具有与原始硅片相近的特性。     

CF4等离子处理在低温硅片直接键合中的应用

键合前用CF4等离子体对硅片表面进行处理,经亲水处理后,完成对硅片的预键合.再在N2保护下进行40h 300℃退火,获得硅片的低温直接键合.硅片键合强度达到了体硅的强度.实验表明,CF4对硅片的处理不仅可以激活表面,而且可以对硅片表面进行有效的抛光,大大加强了预键合的效果.     

Ni-Co合金+Au镀覆陶瓷外壳的引线键合可靠性研究

为了提高陶瓷外壳镀层耐高温变色、耐腐蚀以及长期贮存的能力,带金属零件的陶瓷外壳需采用Co含量在20%~40%的Ni-Co+Au镀覆结构,镀层经退火处理。研究分析了Ni+Au镀覆和NiCo+Au镀覆结构对铝丝楔焊和金丝球焊可靠性的影响,通过常温、300℃高温贮存1 h、300℃高温贮存24 h后引线键合强度变化、键合面的元素面分布进行量化比较。试验表明Ni+Au和Ni-Co+Au镀覆结构对引线键合强度和可靠性无明显影响;两种镀覆结构的外壳在键合时,键合工艺参数也不需要进行较大的调整;铝丝在Ni-Co+Au镀覆结构与Ni+Au镀覆结构上键合,在键合界面均会生成金铝金属间化合物,但只要金层厚度受控,均不会产生"Kirkendall"失效,相对来讲Ni-Co+Au镀覆结构的缺陷密度较低,生成金铝金属间化合物进程会慢些。     

基于Al2O3中间层的InP/SOI晶片键合技术研究

研究了基于Al2O3中间层的InP/SOI晶片键合技术.该方案利用原子层沉积技术在SOI晶片表面形成Al2O3作为InP/SOI键合中间层,同时采用氧等离子体工艺对晶片表面进行活化处理.原子力显微镜和接触角测试结果表明,氧等离子体处理使得晶片的表面特性更适于实现键合.透射电子显微镜和X射线能谱仪测试结果证实,采用Al2O3中间层可以实现InP晶片与SOI晶片的可靠键合.     

硅片键合制备超稳高温压力传感器

一种可在极宽温区(-40℃至250℃)工作,并重复性和再生产性在全程范围好于±0.1%的高精度压阻式压力传感器研制成功.该芯片的制作基于为硅的微机械加工而开发的硅片键合形成SOI的技术.一可去除的N型硅片中注入P~+电阻图形并以退火处理.采用文献     

硅片键合界面缺陷分布与Weibull模数的关系

从理论推导分析了键合片的缺陷分布与Weibull模数m之间的关系。此关系与实验相符,并利用此关系很好地解释了硅片键合强度随退火温度变化的关系。     

直接键合微腔结构的光谱特性

采用直接键合方法制备了法布里-珀罗共振微腔结构，并用传输矩阵方法对其反射光谱进行了理论模拟. 通过构造键合界面两侧多层薄膜材料的光学厚度呈现指数规律变化的模型，分析了键合效应对微腔结构光学特性的影响. 结果表明：在较低退火温度下(如580℃)进行直接键合有利于高光学性能微腔结构的制备，而提高退火温度则需要在键合结构中加入缺陷阻挡层以提高键合质量.     

退火对Ar~+激光再结晶多晶硅/二氧化硅界面性质的影响

本文对CW Ar~+激光再结晶SOI结构材料进行了氢等离子体退火和CW CO_2激光退少.结果表明,两种退火方法都可以明显地降低背界面的界面态陷阱密度.氢等离子体处理对晶粒间界引入的界面态退火效果更显著,而CO_2激光辐照对应力引入的界面态退火作用更明显.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.