共查询到20条相似文献，搜索用时 15 毫秒
1.
2.
3.
高执文;许伟;姚日晖;魏小琴;钟锦耀;杨跃鑫;符晓;刘泰江;宁洪龙;彭俊彪 《液晶与显示》2022,37(8):948-958
薄膜晶体管（ThinFilmTransistor,TFT）作为像素中的开关元器件,与存储电容一起组成电子纸显示器的驱动电路。本文按照柔性TFT有源层的不同进行分类：有机薄膜晶体管（OrganicThinFilmTransistor,OTFT）、非晶硅薄膜晶体管（AmorphousSiliconThinFilmTransistor,a-SiTFT）、金属氧化物薄膜晶体管（MetalOxideThinFilmTransistor,MOTFT）,介绍它们在柔性电子纸显示器中的研究进展,着重关注器件的柔性、电学特性以及稳定性。最后进行了对比分析,提出MOTFT有望凭借优良的电学特性、高光学透明性以及相对较低的工艺温度等优势成为驱动下一代柔性电子纸显示器的最佳候选者。 相似文献
4.
《Organic Electronics》2014,15(9):2073-2078
A compatible process of orthogonal self-assembled monolayers (SAMs) is applied to intentionally modify the bottom contacts and gate dielectric surfaces of organic thin film transistors (OTFTs). This efficient interface modification is first achieved by 4-fluorothiophenol (4-FTP) SAM to chemically treat the silver source–drain (S/D) contacts while the silicon oxide (SiO2) dielectric interface is further primed by either hexamethyldisilazane (HMDS) or octyltrichlorosilane (OTS-C8). Results show that the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved to 0.91 cm2 V−1 s−1. 相似文献
5.
6.
Alexandra F. Paterson Alexander D. Mottram Hendrik Faber Muhammad R. Niazi Zhuping Fei Martin Heeney Thomas D. Anthopoulos 《Advanced Electronic Materials》2019,5(5)
The impact of the gate dielectric on contact resistance in organic thin‐film transistors (OTFTs) is investigated using electrical characterization, bias‐stress stability measurements, and bandgap density of states (DOS) analysis. Two similar dielectric materials, namely Cytop and poly[4,5‐difluoro‐2,2‐bis(trifluoromethyl)‐1,3‐dioxole‐co‐tetrafluoroethylene] (Teflon AF2400), are tested in top‐gate bottom‐contact OTFTs. The contact resistance of Cytop‐based OTFTs is found to be greater than that of the AF2400‐based devices, even though the metal/OSC interface remains identical in both systems. The Cytop devices are also found to perform worse in bias‐stress stability tests which, along with the DOS calculations, suggests that charge trapping at the OSC/dielectric interface is more prevalent with Cytop than AF2400. This increased charge trapping at the Cytop OSC/dielectric interface appears to be associated with the higher contact resistance in Cytop OTFTs. Differences in the molecular structure between Cytop and AF2400 and the large difference in the glass transition temperature of the two polymers may be responsible for the observed difference in the transistor performance. Overall, this study highlights the importance of the gate dielectric material in the quest for better performing OTFTs and integrated circuits. 相似文献
7.
Organic thin film transistors with C_(60) as an n-type semiconductor have been fabricated.A tantalum pentoxide(Ta_2O_5)/poly-methylmethacrylate(PMMA) double-layer structured gate dielectric was used.The Ta_2O_5 layer was prepared by using a simple solution-based and economical anodization technique.Our results demonstrate that double gate insulators can combine the advantage of Ta_2O_5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor.The performanc... 相似文献
8.
《Organic Electronics》2014,15(7):1458-1464
We investigated flexible amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) on a polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and ultrathin Al2O3. IGZO TFTs were fabricated with hybrid PVP/Al2O3 gate dielectrics having Al2O3 layers of different nanoscale thicknesses, which were deposited by atomic layer deposition (ALD). The electrical characteristics of the TFTs with the organic/inorganic hybrid gate dielectrics were measured after cyclic bending up to 1,00,000 cycles at the bending radius of 10 mm. The ultrathin Al2O3 layer in the hybrid gate dielectrics improved the mechanical flexibility and protected the organic gate dielectric against damage during the sputter deposition of the IGZO layer. Finite elements method (FEM) simulations along with the structural characterization of the cyclically bent device showed the importance of optimizing the thickness of the Al2O3 layer in the hybrid gate dielectrics to obtain mechanically stable and flexible a-IGZO TFTs. 相似文献
9.
Dayoon Lee Yongchan Kim So Young Kim Do Hwan Kim Hojin Lee 《Advanced Electronic Materials》2019,5(10)
Coplanar amorphous indium gallium zinc oxide (a‐InGaZnO) thin film transistors (TFTs) with photopatternable ionic polymer gate dielectrics are fabricated and their inverter/shift register circuits are demonstrated. As a gate dielectric, ionic‐polyurethane acrylate (i‐PUA) can be patterned as small as 20 µm through conventional photolithography to achieve superior electrical properties at low operating voltages by the electric double layer formation, inducing ultrahigh channel capacitance. The fabricated solution‐processed a‐InGaZnO TFT with the i‐PUA gate dielectric shows excellent electrical characteristics such as a field‐effect mobility of 11.6 cm2 V−1 s−1, on–off ratio exceeding 107, and low threshold voltage of 0.3 V. It is also confirmed that the inverter and shift register can be fabricated based on the proposed coplanar a‐InGaZnO TFTs and are successfully functional even at 60 Hz operating frequency with driving voltage levels below 3 V. 相似文献
10.
Joshua N. Arthur Mujeeb Ullah Chaudhry Maria A. Woodruff Ajay K. Pandey Soniya D. Yambem 《Advanced Electronic Materials》2020,6(5)
Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization. 相似文献
11.
Christian Effertz Stefan Lahme Philip Schulz Ingolf Segger Matthias Wuttig Arno Classen Carsten Bolm 《Advanced functional materials》2012,22(2):415-420
Dielectric surface modifications (DSMs) can improve the performance of organic thin‐film transistors (OTFTs) significantly. In order to gain a deeper understanding of this performance enhancement and to facilitate high‐mobility transistors, perylene based devices utilizing novel dielectric surface modifications have been produced. Novel DSMs, based on derivates of tridecyltrichlorosilane (TTS) with different functional end‐groups as well as polymeric dielectrics have been applied to tailor the adhesion energy of perylene. The resulting samples were characterized by electronic transport measurements, scanning probe microscopy, and X‐ray diffraction (XRD). Measurements of the surface free energy of the modified dielectric enabled the calculation of the adhesion energy of perylene upon these novel DSMs by the equation‐of‐state approach. These calculations demonstrate the successful tailoring of the adhesion energy. With these novel DSMs, perylene thin‐films with a superior film quality were produced, which enabled high‐performance perylene‐based OTFTs with high charge‐carrier mobility. 相似文献
12.
13.
Ying Liu Ying Wang Weiping Wu Yunqi Liu Hongxia Xi Limin Wang Wenfeng Qiu Kun Lu Chunyan Du Gui Yu 《Advanced functional materials》2009,19(5):772-778
The synthesis, characterization, and field‐effect transistor (FET) properties of a new class of thieno[3,2‐b]thieno[2′,3′:4,5]thieno[2,3‐d]thiophene derivatives are described. The optical spectra of their films show the presence of stronger interactions between molecules in the solid state. Thermal analyses reveal that the three materials are thermally stable and have no phase transitions at low temperature. The crystal structures are determined, and show π‐stacked structures and intermolecular S···S contacts. These organic materials exhibit p‐type FET behavior with hole mobilities as high as 0.14 cm2 V?1 s?1 and an on/off current ratio of 106. These results indicate that thieno[3,2‐b]thieno [2′,3′:4,5]thieno[2,3‐d]thiophene, as a linear π‐conjugated system, is an effective building block for developing high‐performance organic semiconductors. 相似文献
14.
Organic Electronics: Self‐Assembled,Millimeter‐Sized TIPS‐Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric (Adv. Funct. Mater. 24/2015) 
下载免费PDF全文
下载免费PDF全文 Hocheon Yoo Hyun Ho Choi Tae Joo Shin Taiuk Rim Kilwon Cho Sungjune Jung Jae‐Joon Kim 《Advanced functional materials》2015,25(24):3795-3795
15.
Ute Zschieschang James W. Borchert Michele Giorgio Mario Caironi Florian Letzkus Joachim N. Burghartz Ulrike Waizmann Jürgen Weis Sabine Ludwigs Hagen Klauk 《Advanced functional materials》2020,30(20)
Despite the large body of research conducted on organic transistors, the transit frequency of organic field‐effect transistors has seen virtually no improvement for a decade and remains far below 1 GHz. One reason is that most of the research is still focused on improving the charge‐carrier mobility, a parameter that has little influence on the transit frequency of short‐channel transistors. By examining the fundamental equations for the transit frequency of field‐effect transistors and by extrapolating recent progress on the relevant device parameters, a roadmap to gigahertz organic transistors is derived. 相似文献
16.
We have successfully demonstrated a single-crystal field-effect transistors (FETs) based on an asymmetric perylenetetracarboxylic diimide (a-PDI) compound with polystyrene (PS)/SiO2 bilayer as gate dielectric. The single crystals are in-situ grown on substrate from simple solution evaporation method, thus may be suitable for large area electronics applications. The PS modified gate dielectric could minimize charge trapping by the hydroxyl groups of the SiO2 surface. The resulting solution processed single crystals transistors are characterized in ambient air, and exhibited maximum electron mobility of ca. 1.2 cm2 V−1 s−1 and high Ion:Ioff > 105. 相似文献
17.
Hocheon Yoo Hyun Ho Choi Tae Joo Shin Taiuk Rim Kilwon Cho Sungjune Jung Jae‐Joon Kim 《Advanced functional materials》2015,25(24):3658-3665
Here, a highly crystalline and self‐assembled 6,13‐bis(triisopropylsilylethynyl) pentacene (TIPS‐Pentacene) thin films formed by simple spin‐coating for the fabrication of high‐performance solution‐processed organic field‐effect transistors (OFETs) are reported. Rather than using semiconducting organic small‐molecule–insulating polymer blends for an active layer of an organic transistor, TIPS‐Pentacene organic semiconductor is separately self‐assembled on partially crosslinked poly‐4‐vinylphenol:poly(melamine‐co‐formaldehyde) (PVP:PMF) gate dielectric, which results in a vertically segregated semiconductor‐dielectric film with millimeter‐sized spherulite‐crystalline morphology of TIPS‐Pentacene. The structural and electrical properties of TIPS‐Pentacene/PVP:PMF films have been studied using a combination of polarized optical microscopy, atomic force microscopy, 2D‐grazing incidence wide‐angle X‐ray scattering, and secondary ion mass spectrometry. It is finally demonstrated a high‐performance OFETs with a maximum hole mobility of 3.40 cm2 V?1 s?1 which is, to the best of our knowledge, one of the highest mobility values for TIPS‐Pentacene OFETs fabricated using a conventional solution process. It is expected that this new deposition method would be applicable to other small molecular semiconductor–curable polymer gate dielectric systems for high‐performance organic electronic applications. 相似文献
18.
有机薄膜晶体管以其成本低、柔性好、易加工等优点越来越受到人们的青睐,目前已广泛应用于低端器件。为了获得更实际的应用,OTFTs的性能还需进一步的提高和改善。文章中以酞菁铜(CuPc)为有机半导体材料,制备了双栅结构的有机薄膜晶体管,其阈值电压为-4.5V,场效应迁移率0.025cm2/V.s,开关电流比Ion/Ioff达到9.8×103,与单栅有机薄膜晶体管相比,双栅器件在更低的操作电压下获得了更大的输出电流,场效应迁移率更高,而且通过对两个栅压的调节,对导电沟道实现了更好的控制,器件性能有了较大的提高。 相似文献
19.
Kumarasamy Gunasekar Woosum Cho Dang Xuan Long Saripally Sudhaker Reddy Myungkwan Song Yong‐Young Noh Sung‐Ho Jin 《Advanced Electronic Materials》2016,2(8)
Thin film electronic and optoelectronic devices demand electrodes with a work function (Φ) that is sufficiently low to facilitate the transport of electrons in and out of the lowest unoccupied molecular orbital of a given semiconductor. Herein, phenothiazine‐, carbazole‐, and fluorene‐based phenylquinoline derivatives as efficient interfacial layer (IL) materials for solution‐processable organic and metal oxide electronic devices are reported. The IL is applied on top of a charge injection electrode in various solution‐processed devices, including n‐channel organic thin‐film transistors (OTFTs) with [6,6]‐phenyl C71‐butyric acid methyl ester (PC71BM) and poly[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4:5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene) [P(NDI2OD‐T2)] and amorphous indium gallium zinc oxide (IGZO) transistors, and also in organic photovoltaics (OPVs). Both PC71BM‐ and P(NDI2OD‐T2)‐based n‐channel OTFTs with IL show enhanced mobility by more than 200% compared to bare Au electrode. IGZO transistors showed much improved mobility of 15.3 cm2 V−1 s−1 with an IL compared to bare Au (0.6 cm2 V−1 s−1 ) device. A significantly improved power conversion efficiency (PCE) of 7.63% is obtained for IL utilizing the poly[4,8‐bis[(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]‐thiophenediyl] (PTB7):PC71BM based OPVs compared to 4.75% of control device. Ultraviolet photoelectron spectroscopy study reveals that phenylquinoline derivatives significantly lower the Φ of Au, thus facilitating electron injection/extraction in the device. 相似文献
20.
Hyejeong Seong Kwanyong Pak Munkyu Joo Junhwan Choi Sung Gap Im 《Advanced Electronic Materials》2016,2(2)
A series of new ultrathin polymer dielectric layers (sub‐40 nm) is synthesized via initiated chemical vapor deposition (iCVD) for application in low‐power, flexible organic thin‐film transistors (OTFTs): poly(ethylene glycol dimethacrylate) (pEGDMA), poly(isobornyl acrylate) (pIBA), and poly(1H, 1H, 2H, 2H‐perfluorodecyl acrylate) (pPFDA). The iCVD process is a solvent‐free, vapor‐phase process to deposit various kinds of functional polymer films with a high purity. The iCVD polymer dielectric layers commonly exhibit low leakage current densities (J i) less than 10−8 A cm−2 in the range of ±3 MV cm−1, high breakdown field (Ebreak) over 4 MV cm−1, and excellent flexibility up to a tensile strain of 3.3%. Hysteresis‐free, low‐voltage OTFTs made of the iCVD dielectric layers are demonstrated with various kinds of n‐ and p‐type semiconductors. The superior performance of the iCVD dielectrics will enable the polymer films to play a pivotal role in developing various types of future organic electronic devices. 相似文献