论通信机房电压自动均衡的蓄电池组监控系统

通信局站中的蓄电池组一般都做了总电压和单体电压的远程监控,但是该监控不具有蓄电池组电压均衡的功能.蓄电池组在运行一段时间后,各个单体电池电压会出现差异,而这种电压的不均衡会严重影响蓄电池组的使用寿命.传统的蓄电池组均衡管理是通过提高电压,定期进行均衡充电,但是这种通过非即时的、粗放式的均衡充电方式,来提高蓄电池组的均衡性,效果却很不理想.本文针对上述问题,设计出了一种"电压自动均衡的蓄电池组监控系统",该系统不仅具有蓄电池组总电压和单体电压的远程监控功能,还可以根据蓄电池组每个单体蓄电池的实际状况,随时进行均衡管理,可以让每节蓄电池的电压始终保持一致,从而极大地延长蓄电池组的使用寿命.     

基于PIC16F676的太阳能控制器

设计一套简易太阳能控制器,可方便控制蓄电池的充放电。该控制器采用低功耗的PIC16F676型单片机作为整个控制电路的核心．实时监测、控制蓄电池两端电压,使用液晶屏直观显示其电压和电量,采用温度补偿二极管克服环境温度变化引起的蓄电池端电压变化,并采用“自适应三阶段”充电模式,通过不同条件下调用相应的充放电子程序．以最佳的方式对蓄电池进行充放电,更好保护了蓄电池。     

基于PIC16F676的太阳能控制器

设计一套简易太阳能控制器,可方便控制蓄电池的充放电.该控制器采用低功耗的PIC16F676型单片机作为整个控制电路的核心,实时监测、控制蓄电池两端电压,使用液晶屏直观显示其电压和电量,采用温度补偿二极管克服环境温度变化引起的蓄电池端电压变化,并采用"自适应三阶段"充电模式,通过不同条件下调用相应的充放电子程序,以最佳的方式对蓄电池进行充放电,更好保护了蓄电池.     

基于霍尔传感器的铅酸蓄电池监测系统的设计

针对铅酸蓄电池充放电电流存在的一些问题,以霍尔效应原理为基础,利用霍尔传感器其精度高、线性好、频带宽、响应快等优点,设计了霍尔传感器对铅酸蓄电池充放电电流检测的实现。本文着重介绍了监测系统组成,原理以及其应用。通过检测充放电电流,电池组单节电池电压等参数来实现对铅酸蓄电池进行监测。     

论通信用阀控式密封铅酸蓄电池组的维护重组

本文论述了通信用阀控式密封铅酸蓄电池组在使用若干年后,当少数或部分单体的性能指标不能达到指标时,可以通过测试筛选进行单体蓄电池的重组、充放电激活、均衡充电、补充活化液、再充放电激活、再均衡充电、再重组等技术操作,使得部分单体蓄电池达标,从而延长大部分蓄电池的寿命,节约投资。     

通信电源蓄电池的日常维护使用和管理

蓄电池是组合通信电源系统的重要组成部分,所占的投资比例不小,加强对蓄电池的管理,改善其使用状况,从而有效地延长蓄电池的使用寿命,具有重要的意义.目前通信电源所带的蓄电池大多是先进的阀控式密封铅酸蓄电池,这种电池的每节单体电压一般有2 V,6 V,12 V三种,在使用时将多节单体串连,组成48 V的蓄电池组.     

燃料电池汽车的电池管理系统设计

高压蓄电池组是燃料电池车辆的辅助动力源，燃料电池车辆蓄电池组的充放电管理直接关系到蓄电池使用寿命，此系统是通过采集电池电压、充放电电流、温度参数．经分析与计算对蓄电池的充放电进行科学地控制。     

蓄电池极板化成充放电电源的设计

本文着重阐述了蓄电池充放电控制系统的硬件系统设计。本蓄电池极板化成充放电电源采用了晶闸管整流技术,系统采用了晶闸管整流技术,主电路由三相全桥组成,功率开关管选用晶闸管,控制电路以STC89E516RD芯片为核心,通过采集蓄电池的端电压、充放电电流等状态信息,送入DSP进行分析和处理,得到晶闸管的移相角,控制主电路晶闸管的开通时刻,通过整流和逆变两种状态来实现充电和放电;同时控制系统对交流电压、电池端电压和充放电电流进行监测,对系统起到很好的保护作用。     

ZigBee技术在蓄电池监测系统中的应用

本文在概述铅酸蓄电池特性及其常用充放电监测方法的优缺点后,详细介绍ZigBee技术及其特点并论述了基于ZigBee网络进行蓄电池充放电参数检测和传输的可行性.给出了基于CC2430的蓄电池充放电参数监测系统设计方案.     

新型移动通讯基站蓄电池组管理系统

在分析了移动通讯基站蓄电池组充放电管理的设计需求后,提出了一种基于分只分时均充、放电的管理方案。根据预先设定的充放电参数顺序,微控制器对蓄电池组中的单只蓄电池的电压参数进行检测并充放电,达到对蓄电池组高效管理的目的。该系统的成功研制对于提高移动通讯基站蓄电池组容量的利用率、使用寿命及实现蓄电池组智能管理有重要意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.