Giant magnetoresistance, microstructure, and application characteristics of amorphous CoNbZr-based pseudo-spin valves

We have fabricated pseudo-spin-valve (PSV) multilayers with amorphous CoNbZr alloy as a soft magnetic layer and a buffer layer by magnetron sputtering. We investigated the multilayers' giant magnetoresistance (GMR), microstructure,thermal annealing effects, and application characteristics. Our results show that the film microstructure, consequently the magnetostatic coupling effect and the magnetization reversal process, strongly depends on the CoNbZr thickness. We observed antiparallel magnetization alignments in the samples with a 2-4nm CoNbZr layer and a measured maximum GMR ratio of 6.5%. The PSV with 4 nm CoNbZr has a superior thermal stability to 400 /spl deg/C as a result of the dense and homogeneous Cu spacer. After patterning with a 6 /spl mu/m/spl times/1 /spl mu/m elliptic stripe, the structure forms a single domain. The dynamic GMR behavior under a 10 kHz sinusoidal magnetic field indicates the patterned stripe has a linear and stable GMR response. We therefore believe that PSVs with amorphous CoNbZr have good potential for spintronic devices.     

Null-ellipsometry investigations of the optical properties and diffusion processes in spin-valve structures based on Co and Cu

The influence of annealing temperature (T_a = 300-900 K) on optical properties of the Au (4 nm)/Co (3 nm)/Cu (6-12 nm)/Co (20 nm)/SiO₂/Si spin-valve structures was studied. The model of Co, Au, and Cu atom interdiffusion was proposed based on the experimental data analysis. The formation of solid solutions at the thin layer interfaces Au/Co and Cu/Co was studied, and as a result the most intensive formation of solid solutions was identified at annealing temperature of T_a = 750 K. The optical parameters of the samples were calculated using the genetic algorithm. The spin-valve systems remain relatively unperturbed until 750 K, but the optical properties change significantly from 750 to 900 K. It can be explained by the formation of the interphase in multilayer thin film systems.     

基于非晶软磁层的巨磁电阻单元性能研究

采用剥离工艺制备了单元大小为10μm×18μm的CoNbZr/Co/Cu/Co和NiFe/Co/Cu/Co多层膜结构的3×3自旋阀单元阵列,并测试了自旋阀单元的静态和动态巨磁电阻特性.结果表明CoNbZr层对快速磁场变化具有良好的线性响应特性.与NiFe/Co/Cu/Co自旋阀单元相比,微米尺度的CoNbZr/Co/Cu/Co自旋阀单元具有更良好的自旋电子特性,可以应用到包括MRAM器件在内的自旋电子器件中.     

Giant Magnetoresistance Effect of [bcc-Fe(M)/Cu](M=Co,Ni) Multilayers

1. IlltroductionGiant magnetoresistance (GMR) effect of metallic multilayers has been widely investigated after thefinding by Baibich et al.11], as a new phenomenon tobreak through the memory density in ultra high density magnetic recording, high sensitivity in magnetichead, and so on. Metallic multilsyers of 3d transition elements could be classified into three groups of[bee/bcc], [fee/fccl and [bee/fcc] from the standpointof combination of crystal structure of constituting elements of metal…     

Investigations of failure mechanisms at Ta and TaO diffusion barriers by secondary neutral mass spectrometry

One of the most important processes in Cu metallization for highly integrated circuits is to fabricate reliable diffusion barriers. Recently, thin films made of refractory metals and their compounds have been widely used in solid-state electronics as barriers because of their good electric properties, favourable thermal properties and chemical stability. Thermal stability of Tantalum (Ta) and Tantalum-oxide (TaO_x) layers as a diffusion barrier in Si/Ta/Cu, Si/TaO_x/Cu and Si/Ta-TaO_x/Cu systems have been investigated. Si/Ta (10 nm)/Cu (25 nm)/W (10 nm), Si/TaO_x (10 nm)/Cu (25 nm)/W (10 nm) and Si/Ta (5 nm)TaO_x (5 nm)/Cu (25 nm)/W (10 nm) thin layers were prepared by DC magnetron sputtering. A tungsten cap layer was applied to prevent the oxidation of the samples during the annealing process. The samples were annealed at various temperatures (473 K-973 K) in vacuum. Transmission Electron Microscopy, X-ray diffraction, X-Ray Photoelectron Spectroscopy and Secondary Neutral Mass Spectrometry were used to characterize the microstructure and diffusion properties of the thin films. Our results show that at the beginning phase of the degradation of the Si/Ta/Cu system Ta atoms migrate through the copper film to the W/Cu interface. In the Si/TaO_x/Cu system the crystallization of TaO and the diffusion of Si through the barrier determine the thermal stability. The Ta-TaO bilayer proved to be an excellent barrier layer between the Si and Cu films up to 1023 K. The observed outstanding performance of the combined film is explained by the continuous oxidation of Ta film in the TaO_x-Ta bilayer.     

Pseudo spin-valves with different spacer thickness as sensing elements of mechanical strain

Giant magnetoresistance (GMR) effect in cobalt based pseudo spin-valves (SV) is combined with the inverse magnetostriction in sensors of mechanical strain. SV with Co/Au/Co core structure were deposited onto the flexible 125 μm thick polyimide substrates. The influence of magnetostriction on GMR was studied in bending current-in-plane configuration. Total relative strain was between −8.6 × 10⁻³ (compression) and 8.6 × 10⁻³ (tension). SV were designed with respect to the oscillating nature of exchange coupling force vs. spacer thickness. The period of oscillations is not changing under the applied stress in our experimental configuration. From the magnetoresistance ratio vs. strain dependences it follows that the output signal of the strained sensor vs. unloaded one could be improved by a proper choice of the spacer thickness t_s. If t_s = 4 nm the relative output is 36% and for t_s = 2.4 nm it is 34%, however, in this case only in the half range of the strain between 0 and ±8.6 × 10⁻³. For t_s = 2.2 nm the relative output is only 10%.     

ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties

A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O₂/Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70 nm and those of Cu were between 8 and 37 nm. The O₂/Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O₂/Ar ratio of 1:4 and a thickness of ZnO (60 nm)/Cu (15 nm)/ZnO (60 nm).     

Oscillatory behavior of the magnetic properties of Nd–Fe–B films with Mo and Mo–Cu additions

A series of Ta/NdFeB/Ta thin films with Mo and Mo–Cu additions embedded by alloying and by stratification have been prepared by r.f. sputtering. The influence of additions, their embedding mode, and annealing temperature on the structural and magnetic behavior of Ta/NdFeB/Ta thin films is presented. The use of additions of Mo and Mo–Cu leads to refined grain structure and improvement in the hard magnetic characteristics of Ta/NdFeB/Ta thin films. The Ta/[NdFeBMo(540 nm)/Ta films and Ta/[NdFeB(180 nm)/MoCu(dnm)] × n/Ta multilayer films present enhanced coercivities and M_r/M_s ratios in comparison with the Ta/NdFeB(540 nm)/Ta films. The stratification of Ta/NdFeB/Ta thin films with Mo–Cu interlayers leads to an oscillatory behavior of hard magnetic characteristics of the Ta/[NdFeB(180 nm)/MoCu(dnm)] × n/Ta multilayer films, when the thickness, d, of Mo–Cu interlayers varies by increments of 1 nm. When the thickness of Mo–Cu interlayers varies by increments of 2 nm the oscillatory behavior of the magnetic characteristics is not revealed. For a thickness of the Mo–Cu interlayer of 3 nm in the Ta/[NdFeB(180 nm)/MoCu(3 nm)] × 3/Ta thin films annealed at 650 °C, the c-axis of part of the hard magnetic Nd₂Fe₁₄B grains is oriented out-of-plane.     

Influence of a Pb buffer layer on structural and magnetotransport properties of Co/Cu multilayers

In this paper changes of structure and magnetotransport properties of Co/Cu multilayers were observed as a function of the Pb buffer layer thickness. Structural analysis indicated that the Pb buffer leads to the decay of superlattice periodicity. Surface topography of the top layer of the Co/Cu multilayers observed by SFM allowed the determination of surface roughness which is relatively large and weakly depends on buffer thickness. This effect is accompanied by the continuous rise of island size that reaches a diameter around 200 nm for Co/Cu multilayers deposited on 40 nm Pb buffer. AES experiments show significant segregation of Pb to the surface. A small magnetoresistance effect ΔR/R measured for Co/Cu multilayers deposited on an Pb buffer is almost independent of the thickness of the buffer layer. This behavior of ΔR/R could be understood by assuming that discontinuous ferromagnetic layers, bridged through the Cu spacer, are formed.     

High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C²′] iridium (acetylacetonate) (tbt)₂Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt)₂Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m² could be observed.     

Preparation and magnetic properties of electrodeposited [Co/Zn] multilayer films

In this report we describe some experimental results concerning the preparation by electrodeposition and characterization of Co/Zn multilayer films, a system of special significance because Co and Zn are immiscible in a large range of compositions, permitting an easier adaptation of the sharp interfaces and the magnetic interactions between layers, with a view to obtain technological applications in nano-electronics. We established the working parameters for electrodeposition of multilayer films based on Co and Zn nanoscale layers, using a dual-bath potentiostatic electrodeposition method. The effect of the first electrodeposited layer growth process on the structure and magnetic properties of the multilayer were studied by using two series of multilayers of varying periods, starting with Co or Zn layers, respectively (with the same total thickness of Co layers, namely 50 layers of 5 nm thick, but various Zn layer thickness). These properties were also studied as a function of the Zn layer thicknesses (varying between 0.1 nm and 5.9 nm), for the two series of films. The magnetoresistance (in the current in plane configuration with dc magnetic field applied in the film plane), varied with Zn layer thickness, exhibiting a giant magnetoresistance contribution of about 30% in the case of [Co (5 nm)/Zn (2.7 nm)]₅₀ films.     

NiFe／Co／Cu／Co结构自旋阀GMR效应及Co夹层的影响研究

用射频磁控溅射发射法成功制备了ＮｉＦｅ／Ｃｕ／Ｃｏ自旋阀多层膜材料,改变Ｃｕ层的厚度,研究材料的ＧＭＲ效应与Ｃｕ层厚度的关系,结果表明Ｃｕ为２．５ｎｍ时样品的ＭＲ值最大,其磁电阻效应ＭＲ可达１．６％,在ＮｉＦｅ和Ｃｕ之间插入一Ｃｏ薄夹层,通过对不同温度厚度Ｃｏ夹层的样品的ＭＲ曲线及磁滞回线的研究,讨论了Ｃｏ夹层对样品磁电阻的影响并分析了原因,结果表明插入适当的Ｃｏ层将提高材料的磁电阻效应,可达２．     

Magnetoresistance and microstructure evolution upon rapid thermal annealing of giant magnetoresistive Co/Cu/Co/CoNbZr multilayers

The magnetoresistance (MR) variation of Co/Cu/Co/CoNbZr spin valves as a result of rapid thermal annealing has been investigated. MR ratio of 3.8% was obtained in the as-deposited sample and a considerable increase to 6.86% was observed in the 450°C×60 s treated sample. Microstructure studies show that the enhancement of MR ratio is a consequence of the nano-crystallization of amorphous CoNbZr soft layer. The nano-crystallized CoNbZr possess fine and dense microstructure and excellent electrical and soft magnetic properties which leads to the MR enhancement. With increasing annealing temperature or annealing time, interface roughness caused by rapid grain growth decrease the MR ratio rapidly. XRD studies imply that the interfusion of Cu atom into the Co layer is another possible degradation mechanism of Co/Cu/Co/CoNbZr spin valves at annealing temperature beyond 550°C.     

Properties of Electrodeposited CoFeNi/Cu Superlattices: The Effect of CoFeNi and Cu Layers Thicknesses

CoFeNi/Cu superlattices were grown on Ti substrate by electrodeposition as a function of the ferromagnetic and non-magnetic layer thicknesses. In order to examine the effect of the Cu layer thickness on the film properties, the Cu layer thickness was changed from 0.5 to 6 nm, while the CoFeNi layer thickness was kept constant at 4 nm. Also, for the CoFeNi layer effect, the CoFeNi layer thickness was changed from 2 to 15 nm, while the Cu layer thickness was fixed at 4 nm. The structural analysis studied by X-ray diffraction indicated that the superlattices have face-centered-cubic structure. Magnetic characteristics were investigated by vibrating sample magnetometer. From the hysteresis curves, the coercivity and the saturation magnetization were determined. It was found that the easy-axis of the films is parallel to the film plane. Magnetoresistance measurements were made by the Van der Pauw method at the room temperature with magnetic fields up to ±12 kOe. All superlattices exhibited giant magnetoresistance (GMR). As the ferromagnetic layer thickness increased up to 4 nm, the GMR value increases up to 22 % and then decreases. The superlattices saturated at the lower magnetic layers with increasing ferromagnetic layer thickness. The maximum GMR value was obtained to be 22 % for a superlattice with 375[CoFeNi(4 nm)/Cu(4 nm)].     

Magnetoimpedance effect in FeCoB/Cu/FeCoB sandwiched films with Permalloy underlayer

We studied the magnetoimpedance (MI) effect of FeCoB(100 nm)/Cu(100 nm)/FeCoB(100 nm) sandwiched films with different thickness of Permalloy as underlayer for the FeCoB ferromagnetic layer. The maximum MI ratio of sandwiched film is 9.2% when the thickness of the Permalloy underlayer is 2-3 nm. The improvement of MI ratio of sandwiched films with Permalloy underlayer was explained by exchange induced ripple reduction mechanism.     

Structural, optical and electrical properties of AZO/Cu/AZO tri-layer films prepared by radio frequency magnetron sputtering and ion-beam sputtering

Highly conducting tri-layer films consisting of a Cu layer sandwiched between Al-doped ZnO (AZO) layers (AZO/Cu/AZO) were prepared on glass substrates at room temperature by radio frequency (RF) magnetron sputtering of AZO and ion-beam sputtering of Cu. The tri-layer films have superior photoelectric properties compared with the bi-layer films (Cu/AZO, AZO/Cu) and single AZO films. The effect of AZO thickness on the properties of the tri-layer films was discussed. The X-ray diffraction spectra show that all films are polycrystalline consisting of a Cu layer with the cubic structure and two AZO layers with the ZnO hexagonal structure having a preferred orientation of (0 0 2) along the c-axis, and the crystallite size and the surface roughness increase simultaneously with the increase of AZO thickness. When the AZO thickness increases from 20 to 100 nm, the average transmittance increases initially and then decreases. When the fixed Cu thickness is 8 nm and the optimum AZO thickness of 40 nm was found, a resistivity of 7.92 × 10⁻⁵ Ω cm and an average transmittance of 84% in the wavelength range of visible spectrum of tri-layer films have been obtained. The merit figure (F_TC) for revaluing transparent electrodes can reach to 1.94 × 10⁻² Ω⁻¹.     

Investigations of diffusion kinetics in Si/Ta/Cu/W and Si/Co/Ta systems by secondary neutral mass spectrometry

Proper understanding of the degradation mechanisms and diffusion kinetics of copper and cobalt interconnections for advanced microelectronics is important from the point of view of fundamental research and technology as well. In this paper Si(substrate)/Ta(10 nm)/Cu(25 nm)/W(10 nm) and Si(substrate)/Co(150 nm)/Ta(10 nm) samples, prepared by DC magnetron sputtering, were in investigated. The samples were annealed at several temperatures ranging from 423 K to 823 K for various times. The composition distributions were detected by means of Secondary Neutral Mass Spectrometry (SNMS). Microstructural characterization of samples was carried out by means of Transmission Electron Microscopy (TEM). It is shown that the changes in the composition profiles were mainly caused by grain boundary, GB, diffusion and the effective GB diffusion coefficients of Ta in Cu were determined both by the “first appearance” and “centre-gradient” methods. The activation energy is 100 kJ/mol. The importance of the Ta penetration into the Cu and its accumulation at the Cu/W interface can lead to an increase of the Ta content in the copper film. This can be an important factor in the change/degradation of the physical parameters (e.g. the electrical resistance) of interconnects. Furthermore a Ta segregation factor in Cu was evaluated. Preliminary results in the Si(substrate)/Co(150 nm)/Ta(10 nm) indicate fast (GB) diffusion of the Si into the Co layer, formation of a cobalt silicide layer at the Co/Si interface and Si accumulation first at the Ta/Co interface and later a retarded accumulation at the free Ta surface.     

Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics

Ga doped ZnO(GZO)/Cu/GZO multilayers were deposited by magnetron sputtering on polycarbonate substrates at room temperature. We investigated the structural, electrical, and optical properties of multilayers at various thicknesses of Cu and GZO layers. The lowest resistivity value of 3.3 × 10^− 5 Ω cm with a carrier concentration of 2.9 × 10²² cm^− 3 was obtained at the optimum Cu (10 nm) and GZO (10 nm) layer thickness. The highest value of figure of merit φ_TC is 2.68 × 10^− 3 Ω^− 1 for the GZO (10 nm)/Cu(10 nm)/GZO(10 nm) multilayer. The highest average near infrared reflectivity in the wavelength range 1000-2500 nm is as high as 70% for the GZO(10 nm)/Cu(10 nm)/GZO(10 nm) multilayer.     

Investigations of diffusion kinetics in Si/Ta/Cu/W and Si/Co/Ta systems by secondary neutral mass spectrometry

Proper understanding of the degradation mechanisms and diffusion kinetics of copper and cobalt interconnections for advanced microelectronics is important from the point of view of fundamental research and technology as well. In this paper Si(substrate)/Ta(10 nm)/Cu(25 nm)/W(10 nm) and Si(substrate)/Co(150 nm)/Ta(10 nm) samples, prepared by DC magnetron sputtering, were in investigated. The samples were annealed at several temperatures ranging from 423 K to 823 K for various times. The composition distributions were detected by means of Secondary Neutral Mass Spectrometry (SNMS). Microstructural characterization of samples was carried out by means of Transmission Electron Microscopy (TEM). It is shown that the changes in the composition profiles were mainly caused by grain boundary, GB, diffusion and the effective GB diffusion coefficients of Ta in Cu were determined both by the “first appearance” and “centre-gradient” methods. The activation energy is 100 kJ/mol. The importance of the Ta penetration into the Cu and its accumulation at the Cu/W interface can lead to an increase of the Ta content in the copper film. This can be an important factor in the change/degradation of the physical parameters (e.g. the electrical resistance) of interconnects. Furthermore a Ta segregation factor in Cu was evaluated. Preliminary results in the Si(substrate)/Co(150 nm)/Ta(10 nm) indicate fast (GB) diffusion of the Si into the Co layer, formation of a cobalt silicide layer at the Co/Si interface and Si accumulation first at the Ta/Co interface and later a retarded accumulation at the free Ta surface.     

Dielectric/metal/dielectric structures using copper as metal and MoO3 as dielectric for use as transparent electrode

Transparent conductive oxide/metal/oxide, where the oxide is MoO₃ and the metal is Cu, is realized and characterized. The films are deposited by simple joule effect. It is shown that relatively thick Cu films are necessary for achieving conductive structures, what implies a weak transmission of the light. Such large thicknesses are necessary because Cu diffuses strongly into the MoO₃ films. We show that the Cu diffusion can be strongly limited by sandwiching the Cu layer between two Al ultra-thin films (1.4 nm). The best structures are glass/MoO₃ (20 nm)/Al (1.4 nm)/Cu (18 nm)/Al (1.4 nm)/MoO₃ (35 nm). They exhibit a transmission of 70% at 590 nm and a resistivity of 5.0 · 10^− 4 Ω cm. A first attempt shows that such structures can be used as anode in organic photovoltaic cells.