Nanocrystalline chemically modified CdIn2O4 thick films for H2S gas sensor

CdIn₂O₄ sensor with high sensitivity and excellent selectivity for H₂S gas was synthesized by using sol-gel technique. Structural, electrical and gas sensing properties of doped and undoped CdIn₂O₄ thick films were studied. XRD revealed the single-phase polycrystalline nature of the synthesized CdIn₂O₄ nanomaterials. Since the resistance change of a sensing material is the measure of its response, selectivity and sensitivity was found to be enhanced by doping different concentrations of cobalt in CdIn₂O₄ thick films. The sensor exhibits high response and selectivity toward H₂S for 10 wt.% Co doped CdIn₂O₄ thick films. The current-voltage characteristics of 10 wt.% Co doped CdIn₂O₄ calcined at 650 °C shows one order increase in current with change in the bias voltage at an operating temperature of 200 °C for 1000 ppm H₂S gas.     

The gas sensitivity of nano TiO2-SnO2 film doped with Cd(II) ion

The nanocomposite oxide (0.2TiO₂-0.8SnO₂) doped with Cd²⁺ powder have been prepared and characterized by XRD and their gas-sensing sensitivity were characterized using gas sensing measurement. Experimental results show that, bicomponent nano anatase TiO₂ and rutile SnO₂ particulate thick film doped with Cd²⁺ behaves with good sensitivity to formaldehyde gas of 200 ppm in the air, and the optimum sensing temperature was reduced from 360 °C to 320 °C compared with the undoped Cd²⁺ thick film. The gas sensing thick films doped with Cd²⁺ also show good selectivity to formaldehyde among benzene, toluene, xylene and ammonia as disturbed gas and could be effectively used as an indoor formaldehyde sensor.     

Synthesis and characterization of CdO-doped nanocrystalline ZnO:TiO2-based H2S gas sensor

This paper reports the preparation and gas-sensing characteristic of ZnO:TiO₂-based hydrogen sulfide (H₂S) gas sensor with different mol% of CdO by polymerized complex method. The structural and gas-sensing properties of ZnO:TiO₂ materials have been characterized using X-ray diffraction and gas-sensing measurement. The electrical resistance response of the sensor based on the materials was investigated at different operating temperatures and different gas concentrations. The sensor with 10 mol% CdO-doped ZnO:TiO₂ shows excellent electrical resistance response toward H₂S gas. The cross sensitivity was also checked for reducing gases like CH₄, CO and H₂ gas. The selectivity and sensitivity of ZnO:TiO₂-based H₂S gas sensor were improved by the addition of 10 mol% of CdO at an operating temperature of 250 °C.     

Fast response detection of H2S by CuO-doped SnO2 films prepared by electrodeposition and oxidization at low temperature

Fast response detection of H₂S by CuO-doped SnO₂ films prepared was prepared by a simple two-step process: electrodeposition from aqueous solutions of SnCl₂ and CuCl₂, and oxidization at 600 °C. The phase constitution and morphology of the CuO-doped SnO₂ films were characterized by X-ray diffraction and scanning electron microscopy. In all cases, a polycrystalline porous film of SnO₂ was the product, with the CuO deposited on the individual SnO₂ particles. Two types of CuO-doped SnO₂ films with different microstructures were obtained via control of oxidation time: nanosized CuO dotted island doped SnO₂ and ultra-uniform, porous, and thin CuO film coated SnO₂. The sensor response of the CuO doped SnO₂ films to H₂S gas at 50–300 ppm was investigated within the temperature range of 25–125 °C. Both of the CuO-doped SnO₂ films show fast response and recovery properties. The response time of the ultra-uniform, porous, and thin CuO coated SnO₂ to H₂S gas at 50 ppm was 34 s at 100 °C, and its corresponding recovery time was about 1/3 of the response time.     

BaTiO3-SrTiO3 layered dielectrics for energy storage

BaTiO₃-SrTiO₃ (BST) thick films (~ 250-390 μm) with layered structures were fabricated by tape-casting and lamination process. Layered composites with various Ba/Sr ratios were obtained by lamination of BaTiO₃ (BT) and SrTiO₃ (ST) tapes in different spatial configurations (2-2). As-prepared BST ceramics showed much improved sinterability over the laminates of pure BT or pure ST tapes. Dielectric properties of materials were measured in the temperature range of 25 °C to 200 °C. The method of utilizing of layered structures offered flexibility to maximize the energy storage capability at specific operating conditions: (temperature and electric field) by tailoring the dielectric properties through varying the spatial configurations of BT and ST films.     

Effect of cadmium oxide incorporation on the microstructural and optical properties of pulsed laser deposited nanostructured zinc oxide thin films

CdO doped (doping concentration 0, 1, 3 and 16 wt%) ZnO nanostructured thin films are grown on quartz substrate by pulsed laser deposition and the films are annealed at temperature 500 °C. The structural, morphological and optical properties of the annealed films are systematically studied using grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray analysis (EDX), scanning electron microscopy (SEM), atomic force microscopy (AFM), Micro-Raman spectra, UV–vis spectroscopy, photoluminescence spectra and open aperture z-scan. 1 wt% CdO doped ZnO films are annealed at different temperatures viz., 300, 400, 500, 600, 700 and 800 °C and the structural and optical properties of these films are also investigated. The XRD patterns suggest a hexagonal wurtzite structure for the films. The crystallite size, lattice constants, stress and lattice strain in the films are calculated. The presence of high-frequency E₂ mode and the longitudinal optical A₁ (LO) modes in the Raman spectra confirms the hexagonal wurtzite structure for the films. The presence of CdO in the doped films is confirmed from the EDX spectrum. SEM and AFM micrographs show that the films are uniform and the crystallites are in the nano-dimension. AFM picture suggests a porous network structure for 3% CdO doped film. The porosity and refractive indices of the films are calculated from the transmittance and reflectance spectra. Optical band gap energy is found to decrease in the CdO doped films as the CdO doping concentration increases. The PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. The 16CdZnO film shows an intense deep green PL emission. Non-linear optical measurements using the z-scan technique indicate that the saturable absorption (SA) behavior exhibited by undoped ZnO under green light excitation (532 nm) can be changed to reverse saturable absorption (RSA) with CdO doping. From numerical simulations the saturation intensity (I_s) and the effective two-photon absorption coefficient (β) are calculated for the undoped and CdO doped ZnO films.     

Pyroelectric properties of arrayed BaTiO3 system thick film for uncooled IR detector

The Sr and Ca added to BaTiO₃ in order to shift transition temperature near room temperature. The donor (Yb₂O₃) and acceptor (MnCO₃) impurities were added to the (Ba,Sr,Ca)TiO₃ powder for the improvement of structural and electrical properties. The (Ba,Sr,Ca)TiO₃ powder was made by sol-gel method and the thick films were fabricated by screen-printing. We fabricated array type thick films. The 1 mm × 3 mm array thick films were arranged 2 × 8. Relative dielectric constant and dielectric loss of Yb₂O₃ 0.1 mol% doped (Ba,Sr,Ca)TiO₃ array thick film were 1068 and 2.8%, respectively at Curie temperature, 44 °C. Pyroelectric coefficient and F.M.D* showed 21.7 × 10⁻⁹ C/cm² K and 3.2 × 10⁻⁹ C cm/J, respectively.     

Electronic properties of BaTiO3/4H-SiC interface

The possibility of barium titanate (BaTiO₃) application in silicon carbide (SiC) technology has been elaborated in terms of the dielectric film quality and properties of the BaTiO₃/4H-SiC interface. High resistivity, high-k thin films containing La₂O₃ admixture were applied as gate insulator of metal-insulator-semiconductor (MIS) structure. The thin films were deposited by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO₃ + La₂O₃ (2 wt.%) target on 8° off-axis 4H-SiC (0001) epitaxial layers doped with nitrogen. The results of current-voltage and capacitance-voltage measurements are presented for MIS capacitors.     

Characterization of copper oxide thin films deposited by the thermal evaporation of cuprous oxide (Cu2O)

Thin films of copper oxide were deposited by thermal evaporation of cuprous oxide (Cu₂O) powder. The substrates were either unheated or heated to a temperature of 300 °C. The films were also annealed in air at a temperature of 500 °C for 3 h. The films were characterized by X-ray photoelectron spectroscopy, X-ray diffraction and UV-visible spectrophotometry. The effects of the substrate temperature and post-deposition annealing on the chemical, structural and optical properties of the films were investigated. As-deposited films on unheated substrates consisted of mixed cupric oxide (CuO) and Cu₂O phases, with a higher concentration of the Cu₂O phase. However, the films deposited on heated substrates and the annealed films were predominantly of the CuO phase.     

Fabrication of TiO2 nanotubes by anodization of Ti thin films for VOC sensing

Ti thin films were anodized in aqueous HF (0.5 wt.%) and in polar organic (0.5 wt.% NH₄F + ethylene glycol) electrolytes to form TiO₂ nanotube arrays. Ti thin films were deposited on microscope glass substrates and then anodized. Anodization was performed at potentials ranging from 5 V to 20 V for the aqueous HF and from 20 V to 60 V for the polar organic electrolytes over the temperatures range from 0 to 20 °C. The TiO₂ nanotubes were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX). It has been observed that anodization of the deposited Ti thin films with aqueous HF solution at 0 °C resulted in nanotube-type structures with diameters in the range of 30-80 nm for an applied voltage of 10 V. In addition, the nanotube-type structure is observed for polar organic electrolyte at room temperature at the anodization voltage higher than 40 V. The volatile organic compound (VOC) sensing properties of TiO₂ nanotubes fabricated using different electrolytes were investigated at 200 °C. The maximum sensor response is obtained for carbon tetrachloride. The sensor response is dependent on porosity of TiO₂. The highest sensor response is observed for TiO₂ nanotubes which are synthesized using aqueous HF electrolyte and have very high porosity.     

Studies on gas sensing performance of pure and modified barium strontium titanate thick film resistors

Barium strontium titanate ((Ba_0·87Sr_0·13)TiO₃-BST) ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The effect of film thickness on gas response was also studied. As prepared BST thick films were surface modified by dipping them into an aqueous solution of titanium chloride (TiCl₃) for different intervals of time. Surface modification shifted response to H₂S gas suppressing the responses to ammonia and other gases. The surface modification, using dipping process, altered the adsorbate-adsorbent interactions, which gave the unusual sensitivity and selectivity effect. Sensitivity, selectivity, thermal stability, response and recovery time of the sensor were measured and presented.     

Unidentified H2 gas sensing characteristics of BaTiO3:Cu composition

A systematic evaluation of the gas sensing properties of Cu-modified BaTiO₃ pellets for CO, H₂ and LPG gases was carried out in the present investigation. The concentration of Cu in BaTiO₃ was varied systematically from 1 to 11 wt.%. The highest value of sensitivity factor (SF) of 1388 for H₂ and 557 for CO gases was obtained at considerably lower optimum operating temperatures of 180 and 250 °C respectively for 9 wt.% of Cu concentration. The sensor tends to saturate at 5.0 and 3.5% for H₂ and CO gases respectively. The XRD and SEM characterization techniques were employed to understand the possible reasons for the high performance of the sensor material with 9 wt.% of Cu. The study revealed that this sensor material shows extraordinarily promising properties for H₂ gas sensing application.     

High sensitivity chlorine gas sensors using CdIn2O4 thick film prepared by co-precipitation method

Gas-sensing properties to dilute Cl₂ have been investigated for CdIn₂O₄ thick film sensors prepared by co-precipitation method. Cadmium nitrate and indium nitrate were mixed in de-ionized water. The 0.1 M NaOH was added to the mixed solution. The co-precipitate obtained was washed, filtered, dried, and calcined at 600-900 °C for 4 h. The CdIn₂O₄ sensor prepared using the powder calcined at 600 °C showed high sensitivity (S=R_g/R_a) to dilute Cl₂ at 250 °C. In particular, the CdIn₂O₄ sensor showed the sensitivity as high as 1200 even to 0.2 ppm Cl₂. The crystal structure and surface morphology were examined by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively.     

Sensing behaviour of nanosized zinc-tin composite oxide towards liquefied petroleum gas and ethanol

A chemical route has been used to synthesize composite oxides of zinc and tin. An ammonia solution was added to equal amounts of zinc and tin chloride solutions of same molarities to obtain precipitates. Three portions of these precipitates were annealed at 400, 600 and 800 °C, respectively. Results of X-ray diffraction and transmission electron microscopy clearly depicted coexistence of phases of nano-sized SnO₂, ZnO, Zn₂SnO₄ and ZnSnO₃. The effect of annealing on structure, morphology and sensing has been observed as well. It has been observed that annealing promoted growth of Zn₂SnO₄ and ZnSnO₃ at the expense of zinc. The sensing response of fabricated sensors from these materials to 250 ppm LPG and ethanol has been investigated. The sensor fabricated from powder annealed at 400 °C responded better to LPG than ethanol.     

Selective detection of hydrogen sulfide using copper oxide-doped tin oxide based thick film sensor array

In this work, copper oxide-doped (1, 3 and 5 wt%) tin oxide powders have been synthesised by sol–gel method and thick film sensor array has been developed by screen printing technique for the detection of H₂S gas. Powder X-ray diffraction pattern shows that the tin oxide (SnO₂) doped with 3 wt% copper oxide (CuO) has smaller crystallite size in comparison to 0, 1 and 5 wt% CuO-doped SnO₂. Furthermore, field emission scanning electron microscopy manifests the formation of porous film consisting of loosely interconnected small crystallites. The effect of various amounts of CuO dopant has been studied on the sensing properties of sensor array with respect to hydrogen sulfide (H₂S) gas. It is found that the SnO₂ doped with 3 wt% CuO is extremely sensitive (82%) to H₂S gas at 150 °C, while it is almost insensitive to many other gases, i.e., hydrogen (H₂), carbon monoxide (CO), sulphur dioxide (SO₂) and liquefied petroleum gas (LPG). Moreover, at low concentration of gas, it shows fast recovery as compared to response time. Such high performance of 3 wt% CuO-doped SnO₂ thick film sensor is probably due to the diminishing of the p–n junction and the smallest crystallite size (11 nm) along with porous structure.     

Cadmium oxide, indium oxide and cadmium indate thin films obtained by the sol-gel technique

Thin films of the mixed CdO-In₂O₃ system were deposited on glass substrates by the sol-gel technique. The precursor solution was obtained starting from the mixture of two precursor solutions of CdO and In₂O₃ prepared separately at room temperature. The In atomic concentration percentages (X) in the precursor solution with respect to Cd (1 − X), were: 0, 16, 33, 50, 67, 84 and 100. The films were sintered at two different sintering temperatures (Ts) 450 and 550 °C, and after that, annealed in a 96:4 N₂/H₂ gas mixture at 350 °C. X-ray diffraction patterns showed three types of films, excluding those constituted only of CdO and In₂O₃ crystals: i) For X ≤ 50 at.%, the films were constituted of CdO + CdIn₂O₄ crystals, ii) For X = 67 at.%, the films were only formed of CdIn₂O₄ crystals and iii) For X = 84 at.% the films were constituted of In₂O₃ + CdIn₂O₄ crystals. In all films in the 0 < X < 100 range, the formation CdIn₂O₄ crystals of this material was prioritized with respect to the formation of CdO and In₂O₃ materials. All films showed high optical transmission and an increase of the direct band gap value from 2.4 (for CdO) to 3.6 eV (for In₂O₃), as the X value increases. The resistivity values obtained were in the interval of 8 × 10^− 4 Ω cm to 10⁶ Ω cm. The CdIn₂O₄ films had a resistivity value of 8 × 10^− 3 Ω cm and a band gap value of 3.3 eV.     

Blue-violet phosphate phosphor thin films for EL

Photoluminescence (PL) and electroluminescence (EL) in blue-violet emission were observed in newly developed phosphate phosphor thin films such as Ba₃(PO₄)₂:Eu and Ba₃(PO₄)₂:Ti. These phosphate phosphor thin films were first deposited on thick BaTiO₃ ceramic sheets by r.f. magnetron sputtering using powder targets and then post-annealed in various atmospheres. Blue-violet PL and EL emissions were obtained in Ba₃(PO₄)₂:Eu and Ba₃(PO₄)₂:Ti phosphor thin films that were deposited in an Ar + H₂ (10%) gas atmosphere and then post-annealed above about 900 °C in an Ar + H₂ (10%) gas atmosphere. In particular, the EL observed in Ba₃(PO₄)₂:Eu thin films exhibited two peaks, a red emission peaking at about 615 nm and a blue-violet emission peaking at about 420 nm. A luminance of 2.0 cd/m² in blue-violet emission was obtained in a thin-film EL device using a two step post-annealed Ba₃(PO₄)₂:Eu thin-film emitting layer: step 1, post-annealing at 1000 °C in air for 1 h, and step 2, post-annealing at 1000 °C in an Ar + H₂ atmosphere.     

Influence of annealing treatments for ZnO-doped Zr0.8Sn0.2TiO4 thin films by RF magnetron sputtering

Zirconium tin titanium oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr and an Ar/O₂ ratio of 100/0 with various annealing temperatures and annealing times. Electrical properties and microstructures of 1 wt.% ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different annealing temperatures (500 °C-700 °C) and annealing times (2 h-6 h) have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were sensitive to the treatment conditions such as annealing temperature and annealing time. At an annealing temperature of 600 °C and an annealing time of 6 h, the ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films possess a dielectric constant of 46 (at f = 10 MHz), a dissipation factor of 0.059 (at f = 10 MHz), and a low leakage current density of 3.8 × 10^− 9 A/cm² at an electrical field of 1 kV/cm.     

Study on the microstructure and dielectric properties of X9R ceramics based on BaTiO3

This paper investigated the microstructure and dielectric properties of BaTiO₃-Pb(Sn, Ti)O₃ system ceramics. The Curie point of BaTiO₃ is 130 °C. When the temperature is higher than 130 °C, the dielectric constant of BaTiO₃ drops severely according to Curie-Weiss law. Pb(Ti, Sn)O₃(PTS) was selected to compensate the dielectric constant doping of BaTiO₃ since it has high Curie temperature (Tc) point that is about 296 °C. The Curie temperature (Tc) point of BaTiO₃ was broadened and shifted to higher temperature because of the doping of PTS, so the temperature coefficient of capacitance (TCC) curves of the ceramics based on BaTiO₃ was flattened. When 2 wt% Pb(Ti_0.55Sn_0.45)O₃ was added, the sample showed super dielectric properties that the dielectric constant was >1750 at 25 °C, dielectric loss was lower than 2.0% and TCC was <±10% from −55 °C to 200 °C. Therefore the materials satisfied EIA X9R specifications.     

Growth process of CuO(1 1 1) and Cu2O(0 0 1) thin films on MgO(0 0 1) substrate under metal-mode condition by reactive dc-magnetron sputtering

The growth process of CuO and Cu₂O thin films on MgO(0 0 1) substrates by reactive dc-magnetron sputtering was studied by reflection high-energy electron diffraction (RHEED) and atomic-force microscopy (AFM). The RHEED pattern and AFM image showed that (1) three-dimensional Cu(0 0 1) islands grew on MgO under the nonreactive sputtering condition, (2) CuO(1 1 1) was deposited layer by layer on MgO at 400 °C under the reactive sputtering condition, and (3) the film deposited at 600 °C in the initial growth stage was composed of three-dimensional Cu islands because O₂ gas could not be incorporated into them due to the low sticking coefficient of O₂ on MgO under the reactive sputtering condition. The layer-by-layer CuO(1 1 1) thin-film growth process is discussed from the viewpoint that Cu and oxygen species are supplied in stoichiometry onto the MgO substrate to form CuO thin-film crystals while maintaining minimum interfacial energy between CuO and MgO.