Formation of SrTiO3 from Sr-oxalate and TiO2

SrTiO₃ powder has been prepared from Sr-oxalate and TiO₂ precursors, instead of using titanyl-oxalate. Sr-oxalate was precipitated from nitrate solution onto the surface of suspended TiO₂ powders. Crystallization of SrTiO₃ from the precursor was investigated by TGA, DTA and XRD analysis. It is evident that precursor, upon heating, dehydrates in two stages, may be due to the presence of two different types of Sr-oxalate hydrates. Dehydrated precursor then decomposes into SrCO₃ and TiO₂ mixture. Decomposition of SrCO₃ and simultaneous SrTiO₃ formation occur at much lower temperature, from 800 °C onwards, due to the fine particle size of the SrCO₃ and presence of acidic TiO₂ in the mixture. The precursor completely transforms into SrTiO₃ at 1100 °C. About 90 nm size SrTiO₃ crystallites are produced at 1100 °C/1 h, due to the lower calcination temperature and better homogeneity of the precursor.     

Preparation of anatase TiO2 thin films by vacuum arc plasma evaporation

Anatase titanium dioxide (TiO₂) thin films with high photocatalytic activity have been prepared with deposition rates as high as 16 nm/min by a newly developed vacuum arc plasma evaporation (VAPE) method using sintered TiO₂ pellets as the source material. Highly transparent TiO₂ thin films prepared at substrate temperatures from room temperature to 400 °C exhibited photocatalytic activity, regardless whether oxygen (O₂) gas was introduced during the VAPE deposition. The highest photocatalytic activity and photo-induced hydrophilicity were obtained in anatase TiO₂ thin films prepared at 300 °C, which correlated to the best crystallinity of the films, as evidenced from X-ray diffraction. In addition, a transparent and conductive anatase TiO₂ thin film with a resistivity of 2.6 × 10^− 1 Ω cm was prepared at a substrate temperature of 400 °C without the introduction of O₂ gas.     

Structural and electronic impact of SrTiO3 substrate on TiO2 thin films

We demonstrate that the atomic structures, electronic states, and bonding nature of the interface between SrTiO₃ substrate and anatase TiO₂ thin films could be related and technologically manipulated at the atomic level. Applying advanced transmission electron microscopy, the grown anatase TiO₂ thin films are found to make a clean and direct contact to the SrTiO₃ substrates in an epitaxial, coherent, and atomically abrupt way. The atomic-resolution microscopic images reveal that the interface comprises SrO-terminated SrTiO₃ and Ti-terminated TiO₂ with the interfacial Ti of TiO₂ sitting above the hollow site, which is confirmed theoretically to be the most energetically favorable. Quantitatively, the first-principles calculations predict that the oxygen sublattice at the interface undergoes a notable reconstruction, i.e., the interfacial O atoms of TiO₂ are displaced largely toward the SrO plane of the SrTiO₃, flattening the originally zigzag TiO₂ atomic chains. Consequently, the interfacial layers suffer a remarkable modification in the charge accumulation and also a deviation in the density of states from their bulk counterparts, indicating that the substrate can have an impact on the deposited thin films electronically. Using several analytic methods, the SrTiO₃/TiO₂ interface is found to take on a metallic nature, and the interfacial bonding is determined to be of a mixed covalent and ionic character. This combined experimental and theoretical investigation gains insight into the complex atomic and electronic structures of the buried interface, which are fundamental for relating the atomic-scale structures to their properties on a quantum level.     

Synthesis and photocatalytic activity of nanocrystalline TiO2-SrO composite powders under visible light irradiation

Nano-sized homogeneously distributed TiO₂-20, -40, -60 wt.% SrO composite powders were successfully synthesized by a sol-gel method. The as-received amorphous TiO₂—20 wt.% SrO composite powders were crystallized with anatase TiO₂ at around 750 °C. As calcination temperatures increased, the anatase TiO₂ crystalline phase was transformed to rutile TiO₂ at about 900 °C, whereas nano-sized, squarish SrTiO₃ phase was detected. The peaks obtained after calcining at 1050 °C mainly exhibited the rutile TiO₂ and SrTiO₃ phases. However, a small number of SrO₂ peaks were also detected. For the comparison of photocatalytic activity depending on light sources, TiO₂-SrO composite powders were tested in phenol degradation. TiO₂-60 wt.% SrO composite powder showed good visible light photoactivity for the photo-oxidation of phenol.     

Synthesis of SrSnO3 thin films by pulsed laser deposition: Influence of substrate and deposition temperature

SrSnO₃ thin films were prepared by pulsed laser deposition on amorphous silica and single crystal substrates of R-sapphire, (100)LaAlO₃ and (100)SrTiO₃. High quality epitaxial (100) oriented films were obtained on LaAlO₃ and SrTiO₃ while a texture was revealed for films on sapphire deposited at the same deposition temperature of 700 °C. Amorphous films were obtained on silica but a post annealing at 800 °C induced crystallization with a random orientation. The screening of deposition temperature showed epitaxial features on SrTiO₃ from 650 °C while no crystallization was observed at 600 °C. The influence of substrate and deposition temperature was confirmed by Scanning Electron Microscopy and Atomic Force Microscopy observations.     

Microstructure and ferroelectric properties of epitaxial BaTiO3/SrRuO3/SrTiO3 (001) films grown by pulsed laser deposition under high oxygen pressure

BaTiO₃ films were epitaxially grown on SrTiO₃ (001) substrates buffered with SrRuO₃ films as bottom electrode by pulsed laser deposition under high oxygen pressure of 30 Pa. The quality of the BaTiO₃/SrRuO₃/SrTiO₃ multilayer films was analyzed by means of X-ray diffraction, atomic force microscopy and transmission electron microscopy. BaTiO₃ films were found to be highly c-axis-oriented tetragonal phase with c/a = 1.002. The dielectric constant first increased with increasing temperature, and showed a peak at the Curie temperature of about 356 K. The films had well-saturated hysteresis loops with a remnant polarization of 7.3 μC/cm² and a coercive field of 29.5 kV/cm at room temperature.     

Influence of cobalt ion implantation on optical properties of titanium dioxide thin films

Nano-crystalline TiO₂ thin films were synthesized by using sol-gel and spin-coating techniques on glass substrates for photo-catalytic applications. Prior to deposition, a TiO₂ colloidal suspension was synthesized by microwave-induced thermal hydrolysis of the titanium tetrachloride aqueous solution. In this study, the deposited TiO₂ coating with a grain size of 13 ± 2 nm was uniform without aggregation. Co ion implantation into the as-calcined TiO₂ thin films was conducted with fluences of 1 × 10¹⁵-1 × 10¹⁶ doses/cm² at 40 keV. In addition to the emission of TiO₂, the photoluminescence study showed the presence of another Co-related optical center at 405 nm in the Co-implanted TiO₂ thin films. Due to the strong capability of forming impurity compounds between the energetic cobalt ions and TiO₂, the photoluminescence emission and UV-Vis absorption efficiencies were improved.     

Preparation of epitaxial DyFeO3 thin films and magnetodielectric coupling

Multiferroic DyFeO₃ thin films deposited on (001) Nb-doped SrTiO₃ (NSTO) substrates are prepared by pulsed laser deposition. We demonstrate the epitaxial deposition of DyFeO₃ thin films on the substrates with the DyFeO₃(001)//NSTO(001) out-of-plane and DyFeO₃[100]//NSTO[110] in-plane epitaxial relationship. In addition, the weak ferromagnetism and significant magnetodielectric coupling effect at low temperature are revealed. It is indicated that the DyFeO₃ thin films have very different properties from the DyFeO₃ single crystals in term of multiferroicity.     

Lead-free piezoelectric thin films of Mn-doped NaNbO3-BaTiO3 fabricated by chemical solution deposition

Lead-free piezoelectric thin films of NaNbO₃-BaTiO₃ were fabricated on Pt/TiO_x/SiO₂/Si substrates by chemical solution deposition. Perovskite NaNbO₃-BaTiO₃ single-phase thin films with improved leakage-current and ferroelectric properties were prepared at 650 °C by doping with a small amount of Mn. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO₃-0.05BaTiO₃ thin films showed slim ferroelectric P-E hysteresis and field-induced strain loops at room temperature. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO₃-0.05BaTiO₃ films showed remanent polarization values of 6.3 and 6.2 μC/cm², and coercive field of 41 and 55 kV/cm, respectively. From the slope of the field-induced strain loop, the effective piezoelectric coefficient (d₃₃) was found to be 40-60 pm/V.     

Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications

Dielectric SrTiO₃ thin films were deposited on LaAlO₃ and Si substrates using laser molecular beam epitaxy. The correlations between the deposition parameters of SrTiO₃ thin films, their structural characteristics, and dielectric properties were studied. The conditions for achieving epitaxial SrTiO₃ thin films were found to be limited to deposition conditions such as deposition temperature. We show that the SrTiO₃ films with single (110) orientation can be grown directly on Si substrates. The nature of epitaxial growth and interfacial structures of the grown films were examined by various techniques, such as Laue diffraction and X-ray photoelectron spectroscopy. The SrTiO₃/Si interface was found to be epitaxially crystallized without any SiO₂ layer. Furthermore, we have measured dielectric properties of the grown SrTiO₃ multilayer suitable for tunable microwave device. A large tunability of 74.7%, comparable to that of SrTiO₃ single-crystal, was observed at cryogenic temperatures. Such STO thin films will be very promising for the development of microelectronic device applications.     

Synthesis and characterization of beta barium borate thin films obtained from the BaO-B2O3-TiO2 ternary system

This work reports on the synthesis and the structural and optical characterization of beta barium borate (β-BBO) thin films containing 4, 8 and 16 mol% of titanium oxide (TiO₂) deposited on fused silica and silicon (0 0 1) substrates using the polymeric precursor method. The thin films were characterized by X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy techniques. The optical transmission spectra of the thin films were measured over a wavelength range of 800-200 nm. A decrease was observed in the band gap energy as the TiO₂ content was raised to 16 mol%. Only the β-BBO phase with a preferential orientation in the (0 0 l) direction was obtained in the sample containing 4 mol% of TiO₂ and crystallized at 650 °C for 2 h.     

Effects of Ni doping on photocatalytic activity of TiO<Subscript>2</Subscript> thin films prepared by liquid phase deposition technique

The TiO₂ thin films doped by Ni uniformly and non-uniformly were prepared on glass substrate from an aqueous solution of ammonium hexa-fluoro titanate and NiF₂ by liquid phase deposition technique. The addition of boric acid as an F ⁻ scavenger will shift the equilibrium to one side and thereby deposition of the film is progressed. The rate of the reaction and the nature of deposition depend on growing time and temperature. The resultant films were characterized by XRD, EDAX, UV and SEM. The result shows that the deposited films have amorphous background, which becomes crystalline at 500°C. The EDAX data confirms the existence of Ni atoms in TiO₂ matrix. XRD analysis reveals the peaks corresponding to Ni but no peak of crystalline NiO was found. The transmittance spectra of Ni uniformly and non-uniformly doped TiO₂ thin films show ‘blue shift and red shift’, respectively. Ni-doped TiO₂ thin films can be used as photocatalyst for the photodegradation of methyl orange dye. It was found that, organic dye undergoes degradation efficiently in presence of non-uniformly Ni-doped TiO₂ thin films when compared to uniformly doped films and pure TiO₂ films under visible light. The photocatalytic activity increases with increase in the concentration of Ni in case of nonuniformly doped thin films but decreases with the concentration when uniformly doped thin films were used.     

An investigation of super-hydrophilic properties of TiO2/SnO2 nano composite thin films

A sol-gel dip coating technique was used to fabricate TiO₂/SnO₂ nano composite thin films on soda-lime glass. The solutions of SnO₂ and TiO₂ were mixed with different molar ratios of SnO₂:TiO₂ as 0, 3, 4, 6, 8, 9, 10.5, 13, 15, 19.5, 25 and 28 mol.% then the films were prepared by dip coating of the glasses. The effects of SnO₂ concentration, number of coating cycles and annealing temperature on the hydrophilicity of films were studied using contact angle measurement. The films were characterized by means of scanning electron microscopy, X-ray diffraction and atomic force microscopy measurements. The nano composite thin films fabricated with 8 mol.% of SnO₂, four dip coating cycles and annealing temperature of 500 °C showed super-hydrophilicity.     

Ion plasma deposition of oxide films with graded-stoichiometry composition: Experiment and simulation

A method of ion plasma deposition is proposed for obtaining thin multicomponent films with continuously graded composition in depth of the film. The desired composition–depth profile is obtained by varying the working gas pressure during deposition in the presence of an additional adsorbing screen in the drift space between a sputtered target and substrate. Efficiency of the proposed method is confirmed by Monte Carlo simulation of the deposition of thin films of Ba _x Sr_1–x TiO₃ (BSTO) solid solution. It is demonstrated that, during sputtering of a Ba_0.3Sr_0.7TiO₃ target, the parameter of composition stoichiometry in the growing BSTO film varies in the interval of x = 0.3–0.65 when the gas pressure is changed within 2–60 Pa.

     

Dielectric and structural characterization of KNbO3 ferroelectric thin films epitaxially grown by pulsed laser deposition on Nb doped SrTiO3

KNbO₃ thin films were deposited on SrTiO₃ substrates by pulsed laser deposition. The X-ray diffraction patterns highlight an epitaxial growth according to the (011) orientation. This epitaxial growth was then confirmed by Electron Channeling Pattern. In agreement with the structural characteristics the dense microstructure consists in regular and ordered grains. Dielectric measurements were performed in the 20 Hz to 1 MHz frequency range on a KNbO₃ thin film grown on 2 at.% Nb doped (100)SrTiO₃ substrate in a large range of temperature in order to investigate the paraelectric-ferroelectric transition. Measurements at room temperature revealed a dielectric constant of 450 at 10 kHz and a minimum value of the loss tangent of 0.075 at 100 kHz. Dielectric study in the 20-600 °C temperature range showed a maximum of permittivity at the Curie temperature T_c = 410 °C and evidenced a “progressive” first-order phase transition, different from the classical “diffuse” transition.     

Pulsed laser deposition synthesis of superconducting (Cu,C)-Ba-O thin films

(Cu,C)-Ba-O thin films have been epitaxially grown on (100) SrTiO₃ at 500 °C by pulsed laser deposition. Their crystallinity and transport properties have been investigated in order to clarify dominate deposition parameters for carbon-incorporation and superconductivity. The present study has revealed that the growth rate positively correlates with CO₃ content and superconducting properties. In addition, the results suggest that suppression of the radiation damage from energetic particles during deposition is an important factor in obtaining a high and sharp superconducting transition temperature. The work has shown that process parameters can be optimized for growth rate, CO₃ content and minimal radiation damage allowing a superconducting onset temperature of 50 K and zero resistance temperature above 40 K to be realized.     

BiFeO3 thin films prepared using metalorganic chemical vapor deposition

BiFeO₃ thin films were grown on (001) SrTiO₃ and (001) ZrO₂(Y₂O₃) substrates by single source metalorganic chemical vapor deposition in the temperature range T = 500 ÷ 800 °C using Fe(thd)₃ and Bi(C₆H₅)₃ as volatile precursors. X-ray diffraction analysis shows cube-on-cube epitaxial growth of BiFeO₃ on (001) SrTiO₃. The strongly reduced bismuth transfer into the film due to the high thermal stability of Bi(C₆H₅)₃ was counterbalanced by the increase of the total pressure as well as of the residence time of the precursor flow in the reactor; the Bi/Fe ratio in the film thus becomes close to that in the precursor mixture. Optical second harmonic generation measurements have evidenced the ferroelectric ordering in BiFeO₃ films and the apparent decrease of the Curie temperature of the strained films as compared to BiFeO₃ single crystal.     

Hydrophilic properties of nano-TiO2 thin films deposited by RF magnetron sputtering

Microstructure and hydrophilicity of nano-titanium dioxide (TiO₂) thin films, deposited by radio frequency magnetron sputtering, annealed at different temperatures, were studied by field emission scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and water contact angle methods. It is found that the crystal phase transforms from amorphous to rutile structure with increase of annealing temperature from room temperature to 800 °C. It is also indicated that the organic contaminants on the surface of the films can be removed and the oxygen vacancies can be reduced by the annealing treatment. Annealed at the temperature below 300 °C, amorphous TiO₂ thin films show rather poor hydrophilicity, and annealed at the temperature range from 400 to 650 °C, the super hydrophilicity anatase of TiO₂ thin films can be observed. However, when the annealing temperature reaches 800 °C, the hydrophilicity of the films declines mainly derived from the appearance of rutile.     

Structural and transport properties of SrRuO3 thin films grown by MOCVD on (0 0 1) SrTiO3 substrates: The role of built-in strain and extra phases

Pure SrRuO₃ (SRO) thin films and SRO thin films containing the extra metallic phases Ru, RuO₂ and Sr₃Ru₂O₇ were deposited by MOCVD on (0 0 1) SrTiO₃ substrates under different conditions (Ru/Sr and Ar/O₂ ratio in the gas phase, substrate temperature, supersaturation). The single-phase compressively-strained SRO film is of high structural quality and shows a ferromagnetic transition at a suppressed Curie temperature (T_c) of about 142 K and low electrical resistivity (230 μΩ cm). Under certain deposition conditions Ru and RuO₂ extra phases form leading to a reduced room temperature resistivity of 100 μΩ cm. On the other hand, the presence of Sr₃Ru₂O₇ increases the resistivity to 385 μΩ cm. We have observed that the existence of the extra phases caused a slight shift of T_c towards the bulk value, while relaxation of the lattice strain resulted in increase of T_c to 160 K. The deviation from the stoichiometric composition in films with extra phases is also confirmed by the residual electrical resistivity ratio. On the other hand, the pure SRO films, the compressively strained and the plastically relaxed exhibit a stoichiometric ratio.     

Structural, thermal and optical characterization of TiO2:ZrO2 thin films prepared by sol-gel method

We have studied the structural and optical properties of thin films of TiO₂, doped with 5% ZrO₂ and deposited on glass substrate (by the sol-gel method). The dip-coated thin films have been examined at different annealing temperatures (350 to 450 °C) and for various layer thicknesses (63-286 nm). Refractive index and porosity were calculated from the measured transmittance spectrum. The values of the index of refraction are in the range of 1.62-2.29 and the porosity is in the range of 0.21-0.70. The coefficient of transmission varies from 50 to 90%. In the case of the powder of TiO₂, doped with 5% ZrO₂, and aged for 3 months in ambient temperature, we have noticed the formation of the anatase phase (tetragonal structure with 14.8 nm grains). However, the undoped TiO₂ exhibits an amorphous phase. After heat treatments of thin films, titanium oxide starts to crystallize at the annealing temperature 350 °C. The obtained structures are anatase and brookite. The calculated grain size, depending on the annealing temperature and the layer thickness, is in the range (8.58-20.56 nm).