Effects of AlN layer thickness on magnetic anisotropy and transport phenomena of CoPt/AlN layered structure

The magnetic anisotropy was studied as a function of the AlN layer thickness in [AlN(x nm)/CoPt(2 nm)]5/AlN(x nm) layered structure (x is AlN layer thickness, and 5 is the number of multilayer series). The multilayered film was deposited by a sputtering apparatus equipped with two pairs of facing targets. It was found that, in the range of AlN layer thickness below 30 nm, CoPt/AlN multilayers transform from an enhanced in-plane magnetic anisotropy to perpendicular magnetic anisotropy (PMA) through thermal annealing in vacuum, with an optimized AlN thickness of 10 nm for strong PMA. However, beyond this thickness range, the PMA did not occur, and thermal annealing only results in magnetic isotropy in both parallel and perpendicular directions. The related structure analysis revealed that smooth interface and good texture of CoPt (111) make positive contributions to interface anisotropy energy and magnetocrystalline anisotropy energy for producing PMA in CoPt/AlN layered structure. In addition, the transport phenomena were also studied by using a four-probe method.     

The effect of AlN buffer layer on properties of AlxIn1 − xN films on glass substrates

Al_xIn_1 − xN (AlInN) films with x = 0.36 and 0.55 were grown on glass substrate by pulsed direct-current reactive sputtering. X-ray photoelectron spectroscopy depth profiles revealed that oxygen diffused from glass substrate to AlInN films at temperatures ≧ 300 °C. After applying AlN buffer layer, the crystallinity of AlInN films was markedly improved without oxygen contamination observed. The AlN-buffered AlInN films are c-axis-oriented with low full-width-at-half-maximum of 2.9°-3.5°, fine-grained, and low electron concentration, which are comparable with AlInN films grown by other high-temperature processes. AlN buffer layer is proved to be good seeding and diffusion-barrier layers for AlInN films deposited on glass substrates.     

Crystallization of amorphous AlN and superhardness effect in VC/AlN nanomultilayers

VC/AlN nanomultilayers with various AlN layer thicknesses have been prepared by multi-target magnetron sputtering. Microstructure evolution and mechanical properties of the multilayers have been investigated. Under the “template effect” of cubic VC, as-deposited amorphous AlN has been crystallized to cubic structure with AlN layer thickness < 1 nm, correspondingly the multilayers exhibit coherent growth and obtain significantly enhanced hardness with the maximum of 40.1 GPa. A further increase of AlN layer thickness causes the formation of amorphous AlN, which blocks the coherent growth of the multilayers, resulting in a rapid decline of hardness.     

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH₃) and trimetylgallium (TMG) under low V/III source gas ratio (NH₃/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C₃H₈). The AlN layer was deposited as a buffer layer using NH₃ and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH_x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.     

Synthesis of c-axis oriented AlN thin films on different substrates: A review

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N₂ gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.     

添加AlN对FePt薄膜结构和磁性的影响

采用射频磁控溅射制备了FePt(50nm)和[FePt(2,3,5nm)/AlN(1nm)]n膜,之后在550℃退火30min,研究了周期数(n)和AlN含量对[FePt/AlN]_n系列多层膜结构及磁性的影响.结果表明,多层膜的矫顽力和矩形比均在n=8时出现较大值;周期数的增大会引起晶粒尺寸的长大;AlN的加入不但可以抑制FePt粒子的长大,使晶粒体积(V_grain)和磁激活体积(V*)趋于一致,而且还能有效地降低晶粒间交换耦合作用,并且AlN含量越大,晶粒间交换耦合作用的程度越弱.     

Granular L10 FePt nanocomposite films fabricated by rapid thermal annealing

Granular (FePt)_100−x-(NiO)_x nanocomposite thin films with x = 0 − 42 vol% were fabricated on a natural-oxidized Si(100) substrate. It is found that both the coercivity and FePt domain size decrease with increasing NiO content for the (FePt)_100−x-(NiO)_x films. When the FePt-NiO composite film with NiO content of 10.4 vol% is post-annealed at 750 °C with a high heating ramp rate of 100 °C/s, the in-plane coercivity (H_c//) and perpendicular coercivity (H_c⊥) of the FePt films are 513 and 430 kA/m, respectively. On the other hand, we used conductive atomic force microscope (CAFM) to confirm that the NiO compound is distributed at boundary of FePt particles that will constrain the domain size of FePt and decrease the exchange coupling interactions between FePt magnetic particles.     

Magnetic properties and microstructures of perpendicular anisotropy (SmCo7/Cu)n films

Pseudobinary SmCo_7 − xCu_x intermetallic compound films with a TbCu₇-type structure were prepared by sputtered (SmCo₇/Cu)_n multilayer. After annealing, the spacer layer Cu (0.5-1.5 nm) diffused into the SmCo₇ matrix and stabilized the SmCo₇ meta-stable phase. The resulting microstructure was investigated by transmission electron microscopy. Perpendicular anisotropy was obtained by introducing a Cu/Ti dual underlayer during sputtering, resulting in prefer-orientated SmCo₇ (00L) X-ray diffraction peaks. This study observes a maze-like domain pattern in perpendicular anisotropy films and finds single- and multi-domain particles in correlated AFM and MFM images.     

Low temperature ordering of FePt films by in-situ heating deposition plus post deposition annealing

FePt thin films with 40 nm thickness were prepared on thermally oxidized Si (001) substrates by dc magnetron sputtering at the nominal growth temperature 375 °C. The effects of annealing on microstructure and magnetic properties of FePt thin films were investigated. The as-deposited FePt thin films show soft magnetic properties. After the as-deposited FePt thin films were annealed at various temperatures and furnace cooled, it is found that the ordering temperature of L1₀ FePt phase could be reduced to 350 °C. For FePt thin films annealed at 350 °C, the in-plane and out-of-plane coercivities of the films increased to 510 and 543 kA/m, respectively, and the films had hard magnetic properties. A highly (001) orientation was obtained, when FePt thin films were annealed at 600 °C. And the hysteresis loops of FePt thin films annealed at 600 °C show out-of-plane magnetic anisotropy.     

Effects of the stacking levels on permeability characteristics and soft magnetic properties in FeCoHfAlO/AlOx multilayered films

In the communication industry, miniaturization is highly required for inductor devices. In order to miniature the dimension of inductors, high inductance is necessary. For this purpose, to employ high-permeability magnetic films enhances the inductance of inductors. For high-permeability, in-plane uniaxial anisotropy is a critical demand. The FeCoHfAlO/AlO_x multilayered films were fabricated by dc reactive magnetron sputtering. Due to the insertion of AlO_x layers, the out-of-plane uniaxial anisotropy of the FeCoHfAlO magnetic films is reduced and their resistivity is also raised. Therefore, the permeability of the FeCoHfAlO/AlO_x multilayers will be increased further. With the optimum configuration of a seven-layer structure [FeCoHfAlO (171 nm)/AlO_x (10 nm)]₇, high resistivity (ρ ~ 7490 μΩcm) and high-permeability (μ′ > 90 at 30-50 MHz) were obtained. The permeability increased nearly ten times from 9 (3 layers) to 98 (7 layers).     

Enhancement of mechanical and tribological properties in AISI D3 steel substrates by using a non-isostructural CrN/AlN multilayer coating

Enhancement of mechanical and tribological properties on AISI D3 steel surfaces coated with CrN/AlN multilayer systems deposited in various bilayer periods (Λ) via magnetron sputtering has been studied in this work exhaustively. The coatings were characterized in terms of structural, chemical, morphological, mechanical and tribological properties by X-ray diffraction (XRD), electron dispersive spectrograph, atomic force microscopy, scanning and transmission electron microscopy, nanoindentation, pin-on-disc and scratch tests. The failure mode mechanisms were observed via optical microscopy. Results from X-ray diffraction analysis revealed that the crystal structure of CrN/AlN multilayer coatings has a NaCl-type lattice structure and hexagonal structure (wurtzite-type) for CrN and AlN, respectively, i.e., made was non-isostructural multilayers. An enhancement of both hardness and elastic modulus up to 28 GPa and 280 GPa, respectively, was observed as the bilayer periods (Λ) in the coatings were decreased. The sample with a bilayer period (Λ) of 60 nm and bilayer number n  =  50 showed the lowest friction coefficient (∼0.18) and the highest critical load (43 N), corresponding to 2.2 and 1.6 times better than those values for the coating deposited with n = 1, respectively. The best behavior was obtained when the bilayer period (Λ) is 60 nm (n = 50), giving the highest hardness 28 GPa and elastic modulus of 280 GPa, the lowest friction coefficient (∼0.18) and the highest critical load of 43 N. These results indicate an enhancement of mechanical, tribological and adhesion properties, comparing to the CrN/AlN multilayer systems with 1 bilayer at 28%, 21%, 40%, and 30%, respectively. This enhancement in hardness and toughness for multilayer coatings could be attributed to the different mechanisms for layer formation with nanometric thickness such as the Hall–Petch effect and the number of interfaces that act as obstacles for the crack deflection and dissipation of crack energy.     

On the bioactivity of adherent bioglass thin films synthesized by magnetron sputtering techniques

We report on the synthesis of 700 nm thick bioglass thin films by magnetron sputtering from 45S5 bioglass targets in the argon atmosphere. The adhesion of films to Ti substrates increased 1.75 times when introducing an ∼ 70 nm thick mixed glass-Ti buffer layer (BG_1 − xTi_x (x = 0-1)) with gradient of composition by co-sputtering. The morphological and structural properties of the films were studied by XRD, FTIR and microscopic techniques, showing an improvement after the two-hour thermal air treatment at 650 °C.We investigated in vitro the viability and proliferation of human osteoblast cells cultivated onto the surface of the films. The osteoblasts spread over the surface adopting typical polyhedral shapes with numerous focal adhesion points and protrusions infiltrating deep into the films. We assigned this evolution to the improved mechanical properties and enhanced bioactivity due to the prevalent formation of combeite and wollastonite crystalline phases in the heat treated bioglass films.     

Tribological and mechanical behaviors of TiN/CNx multilayer films deposited by magnetron sputtering

TiN/CN_x multilayer films with bilayer periods of 4.5-40.3 nm were deposited by direct-current magnetron sputtering. Layer morphology and structure of the multilayered films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. The TiN/CN_x multilayers exhibited coherent epitaxial growth due to the mutual growth-promoting effect at small bilayer period and some crystalline regions going through the interface of TiN/CN_x. Nanoindentation tests showed that the hardness of the multilayers varied from 12.5 to 31 GPa, with the highest hardness being obtained with a bilayer period of 4.5 nm. The tribological properties of the films were investigated using a ball-on-disk tribometer in humid air, and the TiN/CN_x multilayer with a bilayer period of 4.5 nm also exhibited the lowest friction coefficient and the highest wear resistance.     

Characterization of 4H-SiC grown on AlN/Si(100) by CVD

By using chemical vapor deposition method, 4H-SiC films have been grown on AlN/Si(100) complex substrates at the temperature below 1100 °C. Substitutional Al and N are found in the SiC film. Photoluminescence (PL) peaks, related to Al acceptor and N shallow donor, respectively, have been observed at the room-temperature. The higher partial pressure ratio of SiH₄ and C₂H₄ (P_C2H4 / P_SiH4 ≧ 1.62) results in more Si-vacancy (V_Si) in the film. The PL peak related to the V_Si acceptor level is also observed.     

Improvement of magnetic characteristics and electrical properties of FeCoHfO/AlOx multilayered films

High permeability magnetic films can enhance the inductance of thin-film inductors in DC-DC converters. In order to obtain high permeability, effective uniaxial anisotropic field should be as low as possible. A multilayered technique (laminating the magnetic layers with oxide spacers) was exploited to improve the magnetic properties of thick films. The FeCoHfO/AlO_x multilayered films were fabricated by dc reactive magnetron sputtering. Inserting an insulator (AlO_x) layer can decrease the magneto-elastic anisotropy by reducing the residual stress of the FeCoHfO magnetic films. The anisotropic field and resistivity of the FeCoHfO/AlO_x multilayered films were evidently improved by multilayered coating. With this optimum configuration of 9 layers structure [FeCoHfO (133 nm)/AlO_x (10 nm)]₉, low anisotropic field (H_K = 65 Oe) and high resistivity (ρ ∼ 1350) μΩ cm were achieved.     

Characteristics of nanocrystalline AlN:Er films co-deposited by using AlN, Er, and SiO2 targets

We report the characteristics of AlN:Er films that were co-deposited by using AlN, Er, and SiO₂ targets. The PL emission spectra show strong green emissions of Er³⁺ ions in AlN:Er films annealed at an optimal temperature of 750 °C, which is attributed to the intra-4f Er³⁺ transitions of ²H_11/2 → ⁴I_15/2 and ⁴F_7/2 → ⁴I_15/2. This optimal temperature can activate Er species as an efficient visible luminescence center. High-resolution transmission electron microscopy (HREM) observations showed that the AlN:Er film annealed at 750 °C exhibits the microstructure of AlN nanocrystallites embedded in the amorphous matrix. The occurrence of strong Er³⁺ emissions in the amorphous-nanocrystalline AlN:Er films by thermal annealing might contribute to an increased number of excitation Er³⁺ centers and the presence of oxygen related to Er³⁺ excitation and recombination processes. A distinct visible bluish green emission is also confirmed from the EL device with an amorphous-nanocrystalline AlN:Er active layer.     

Fourier transform infrared spectroscopy characterization of AlN thin films grown on sacrificial silicon oxide layers via metal organic vapor phase epitaxy

Aluminum nitride (AlN) films were grown using metal organic vapor phase epitaxy techniques on Si (111) substrates patterned with silicon oxide (SiO_x) stripes and the vibrational properties of these films were investigated by Fourier transform infrared (FTIR) techniques. The grown films contained a predominantly wurtzite AlN phase. The AlN film on SiO_x was prone to corrosion when subjected to wet etching in buffered hydrofluoric acid solution thereby changing the material properties of the AlN film on SiO_x. The change in the material properties of the AlN films on SiO_x can be gauged from the decrease in the relative integrated areas under the A1 (TO) and E1 (TO) modes of the AlN film. The analysis shows that FTIR is a viable tool for investigating the material properties of AlN thin film structures with lateral dimensions as low as 100 μm.     

Structure and magnetic properties of high coercive [PrFeBx/Cu]n films with out-of-plane orientation

Pr-Fe-B single layer and [PrFeB_x/Cu]_n films were prepared by magnetron sputtering on Si substrate heated at 650 °C. The influence of the composition and thickness of Cu spacer layer on the structure and magnetic properties of films with out-of-plane orientation are investigated. The [PrFeB_x/Cu]_n films present an enhanced coercivity and a lower remanence, in comparison with the results of Pr-Fe-B single layer. The coercivity H_c⊥ of about 19.7 kOe and the remanence ratio M_r/M_s of about 0.90 are achieved in the Mo(50 nm) / [PrFeB(300 nm) / Cu(2 nm)]₂ / Mo(50 nm) film.     

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH₃). At 185 °C, deposition rate saturated for TMA and NH₃ doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH₃ resulted in a constant growth rate of ~ 0.86 Å/cycle from 100 to 200 °C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≥ 225 °C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185 °C were investigated by X-ray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185 °C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at ~ 5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum.     

High-frequency ferromagnetic properties of multilayered FeCoHfO/AlOx films

For mobile communication, the ferromagnetic resonance frequency of magnetic films must be over 3 GHz. A suitable anisotropic field and high resistivity for high frequency applications were obtained by inserting insulator (AlO_x) layers into ferromagnetic layers (FeCoHfO). With this optimum configuration of three layers structure [FeCoHfO (400 nm)/AlO_x (10 nm)]₃, high frequency characteristics (permeability ∼ 100 at 100 MHz and ferromagnetic resonance frequency over 3 GHz) and high resistivity (ρ ∼ 1088) μΩ cm were achieved.