Reactivity of Aluminum Nitride Powder in Aqueous Silicon Nitride and Silicon Carbide Slurries

The reactivity of AlN powder with water in supernatants obtained from centrifuged Si₃N₄ and SiC slurries was studied by monitoring the pH versus time. Various Si₃N₄ and SiC powders were used, which were fabricated by different production routes and had surfaces oxidized to different degrees. The reactivity of the AlN powder in the supernatants was found to depend strongly on the concentration of dissolved silica in these slurries relative to the surface area of the AlN powder in the slurry. The hydrolysis of AlN did not occur if the concentration of dissolved silica, with respect to the AlN powder surface, was high enough (1 mg SiO₂/(m² AlN powder)) to form a layer of aluminosilicates on the AlN powder surface. This assumption was verified by measuring the pH of more concentrated (31 vol%) Si₃N₄ and SiC suspensions also including 5 wt% of AlN powder (with respect to the solids).     

Preparation of Aluminum Nitride–Silicon Carbide Nanocomposite Powder by the Nitridation of Aluminum Silicon Carbide

Aluminum nitride (AlN)–silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al₄SiC₄) with the specific surface area of 15.5 m²·g⁻¹. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich phases. The formation of homogeneous solid solution proceeded with increasing nitridation temperature from 1400° up to 1500°C. The specific surface area of the AlN–SiC powder nitrided at 1500°C for 3 h was 19.5 m²·g⁻¹, whereas the primary particle size (assuming spherical particles) was estimated to be ∼100 nm.     

Heat-Resistant Silicon Carbide with Aluminum Nitride and Erbium Oxide

Fully dense SiC ceramics with high strength at high temperature were obtained by hot-pressing and subsequent annealing under pressure, with AlN and Er₂O₃ as sintering additives. The ceramics had a self-reinforced microstructure consisting of elongated SiC grains and a grain-boundary glassy phase. The strength of these ceramics was ∼550 MPa at 1600°C, and the fracture toughness was ∼6 MPa·m^1/2 at room temperature. The beneficial effect of the new additive composition on high-temperature strength might be attributable to the introduction of aluminum from the liquid composition into the SiC lattice, resulting in a refractive grain-boundary glassy phase.     

Microstructure and Mechanical Properties of Heat-Treated Silicon Carbide–Aluminum Nitride Solid Solutions

Nanophase-structured composites were fabricated by heat treating hot-pressed 2H-wurtzite SiC-AlN solid-solution specimens of 25, 50, and 75 mol% AlN within the spinodal decomposition zone. Heat-treatment conditions were 1750°C for 150 h, in flowing nitrogen gas. The hot-pressed specimens contained 2H-wurtzite equiaxed grains, and the grain size increased with AlN content. Lattice parameters followed Vegard's law. Nanoprecipitates with typical modulated tweed-type structures were observed along the [2 1 1 0] zone axis and were orthogonal to the {01 1 2} planes that make angles of 46.70°, 46.90°, and 47.11° to the [0001] for the three compositions. The microhardness, flexural strength, and fracture-toughness values of the heat-treated specimens were not significantly different from the hot-pressed values.     

Preparation and Properties of Porous Aluminum Nitride–Silicon Carbide Composite Ceramics

Microporous two-phase AlN–SiC composites were prepared using Al₄C₃ and either Si (N₂ atmosphere) or Si₃N₄ (Ar atmosphere) as precursors. The reaction mechanisms of the two synthesis routes and the effect of processing conditions on reaction rate and the material microstructures were demonstrated. The exothermic reaction between Si and Al₄C₃ under N₂ atmosphere was shown to be a simple processing route for the preparation of porous two-phase AlN–SiC materials. The homogeneous two-phase AlN–SiC composites had a grain size in the range of 1–5 μm, and the porosity varied in the range of 36%–45%. The bending strength was 50–60 MPa, in accordance with the high porosity.     

Ceramization of Reflux-Treated Polymethylsilane Precursors to Silicon Carbide

The pyrolysis of polymethylsilane (PMS) in an argon gas environment with a flow rate of 1 L/min was investigated as a standard pyrolytic process, and the investigation showed SiSi network formation at 573 K. Subsequently, various condensed PMS resins were prepared by adjusting pre-heat-treatment or reflux conditions in the temperature range of 423–723 K. The effect of pre-heat treatment or refluxing on the ceramic yield at 1273 K was quantitatively evaluated. Structural evolution in the PMS resins prepared under various reflux conditions was investigated during pyrolysis up to 1873 K. The X-ray diffraction patterns of the pyrolysis products revealed crystallite growth of β-SiC and silicon at 1273–1473 K. ²⁹Si solid-state nuclear magnetic resonance with the single-pulse method was also conducted on the pyrolysis products at 1273 K.     

Characterization of Gold—Aluminum Nitride and Gold—Silicon Carbide Interfaces

Aluminum nitride and silicon carbide substrates were screen-printed with fritless gold and fired at 850°C in air. Interfacial diffusion zones up to 7 αm thick were observed, in which the concentrations of Au, Na impurities, and combined O varied together. Secondary ion mass and photoelectron spectroscopy revealed oxidized Al in the gold conductor supported by AIN. It is suggested that enhanced oxidation accompanies the diffusion of Au into the ceramics.     

In Situ Polysilane-Derived Silicon Carbide Particulates Dispersed in Silicon Nitride Composite

A dense (97% of theoretical density) Si₃N₄—SiC composite containing 10 wt%β-SiC was prepared by introducing a SiC phase by the pyrolysis of a polymeric SiC precursor. The composite material was produced by mixing an alkyl/aryl-substituted polysilane with Si₃N₄ powder and, by subsequently forming green compacts, pyrolyzing the polymeric species, and finally sintering the sample. Synthesis and characterization of the polymeric compound was described. Its transformation reactions to SiC and the characterization of the ceramic residue were also studied. High ceramic yields were obtained by curing the as-synthesized polysilane at 500°C in an Ar atmosphere. The heat treatment had no effect on the good solubility of the polymeric precursor in organic solvents. This was important for processes such as infiltration, sealing, and coating and for the mixing of the polymer with powders for the preparation of homogeneous composite ceramics. The dense microstructure of the pyrolyzed and sintered Si₃N₄ powder–polysilane mixture exhibited reduced grain growth of the Si₃N₄ particles and a very homogeneous distribution of the in situ-formed β-SiC phase.     

Preparation of Ultrafine Silicon Nitride, and Silicon Nitride and Silicon Carbide Mixed Powders in a Hybrid Plasma

Ultrafine Si₃N₄ and Si₃N₄+ SiC mixed powders were synthesized through thermal plasma chemical vapor deposition (CVD) using a hybrid plasma which was characterized by the superposition of a radio-frequency plasma and an arc jet. The reactant, SiCl₄, was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant, CH₄ and/or NH₃, was injected into the tail flame through multistage ring slits. In the case of ultrafine Si₃N₄ powder synthesis, reaction effieciency increased significantly by multistage injection compared to single-stage injection. The most striking result is that amorphous Si₃N₄ with a nitrogen content of about 37 wt% and a particle size of 10 to 30 nm could be prepared successfully even at the theoretical NH₃/SiCl₄ molar ratio of ∼ 1.33, although the crystallinity depended on the NH₃/SiCl₄ molar ratio and the injection method. For the preparation of Si₃N₄+ SiC mixed powders, the N/C composition ratio and particle size could be controlled not only by regulating the flow rate of the NH₃ and CH₄ reactant gases and the H₂ quenching gas, but also by adjusting the reaction space. The results of this study provide sufficient evidence to suggest that multistage injection is very effective for regulating the condensation process of fine particles in a plasma tail flame.     

Aluminum Nitride Prepared by Nitridation of Aluminum Oxide Precursors

Aluminum nitride (AlN) powders were prepared from the oxide precursors aluminum nitrate, aluminum hydroxide, aluminum 2-ethyl-hexanoate, and aluminum isopropoxide (i.e., Al(NO₃)₃, Al(OH)₃, Al(OH)(O₂CCH(C₂H₅)(C₄H₉))₂, and Al(OCH(CH₃)₂)₃). Pyrolyses were performed in flowing dry NH₃ and N₂ at 1000°–1500°C. For comparison, the nitride precursors aluminum dimethylamide (Al(N(CH₃)₂)₃) and aluminum trimethylamino alane (AlH₃·N(CH₃)₃) were exposed to the same nitridation conditions. Products were investigated using XRD, TEM, EDX, SEM, and elemental analysis. The results showed that nitridation was primarily controlled by the water:ammonia ratio in the atmosphere. Single-phase AlN powders were obtained from all oxide precursors. Complete nitridation was not obtained using pure N₂, even for the non-oxide precursors.     

Microstructure and Mechanical Properties of Hot-Pressed Silicon Carbide-Aluminum Nitride Compositions

A flexural strength of up to 1 GPa was achieved in SiC-AIN materials and is attributed to a dense, equiaxial grain structure of the 2H(δ) SiC-AIN solid solution, with a relatively uniform grain size of ∼ 1 μm. The strength was found to decrease with increasing grain size. While the β→α phase transformation and the formation of various metastable polytypes make microstructural control difficult in SiC materials, excellent control is facilitated in SiC-AIN materials as a result of the stable 2H solid solution. Several mechanisms of grain refinement during the β→ 2H transition were observed, most notably the direct formation of several 2H grains from a single β grain. In addition, grain growth is limited by the diffusion-controlled nature of the transition. These mechanisms could be utilized to achieve even higher strength values, with potentially higher reliability of the materials in structural applications.     

Silicon Carbide Monofilament-Reinforced Silicon Nitride or Silicon Carbide Matrix Composites

SiC-monofilament-reinforced SiC or Si₃N₄ matrix composites were fabricated by hot-pressing, and their mechanical properties and effects of filaments and filament coating layers were studied. Relationships between frictional stress of filament/matrix interface and fracture toughness of SiC monofilament/Si₃N₄ matrix composites were also investigated. As a result, it was confirmed experimentally that in the case of composites fractured with filament pullout, the fracture toughness increased as the frictional stress increased. On the other hand, when frictional stress was too large (>about 80 MPa) for the filament to be pulled out, fracture toughnesses of the composites were almost the same and not so much improved over that of Si₃N₄ monolithic ceramics. The filament coating layers were found to have a significant effect on the frictional stress of the SiC monofilament/Si₃N₄ matrix interface and consequently the fracture toughness of the composites. Also the crack propagation behavior in the SiC monofilament/Si₃N₄ matrix composites was observed during flexural loading and cyclic loading tests by an in situ observation apparatus consisting of an SEM and a bending machine. The filament effect which obstructed crack propagation was clearly observed. Fatigue crack growth was not detected after 300 cyclic load applications.     

Thermal Conversion of Preceramic Polyiminoalane Precursors to Aluminum Nitride: Characterization of Pyrolysis Products

This study introduces a new method for the synthesis of aluminum nitride by pyrolysis of a polymeric precursor. Metallic aluminum is electrolytically dissolved in an electrolyte containing a primary amine. Subsequent drying and heating enables the formation of a polymeric, gellike intermediate polyiminoalane compound. Calcining in ammonia atmosphere at 850°C results in aluminum nitride powder with a mean crystallite size of about 30 nm.     

Synthesis of Aluminum Nitride–Silicon Carbide Solid Solutions by Combustion Nitridation

AlN–SiC solid solutions were synthesized via a combustion nitridation process. Reactions between powder mixtures of aluminum, silicon, and carbon or aluminum with β-SiC and gaseous nitrogen under pressures of 0.1–8.0 MPa are self-sustaining once they have been initiated. Investigations were made with reactant ratios of Al:Si:C = 7:3:3, 6:4:4, and 5:5:5 and Al:SiC = 7:3, 6:4, and 5:5. For the Al-Si-C system (molar ratio of 6:4:4), the maximum combustion temperature was dependent on the nitrogen pressure, increasing from 2300°C to 2480°C with an increase in pressure, from 0.1 MPa to 6.0 MPa. In all cases, the product contained the solid solution as the primary phase, with minor amounts of silicon. The amount of unreacted silicon decreased as the nitrogen pressure increased; the presence and dependence of unreacted silicon on pressure has been explained in terms of the volatilization of aluminum. The full width at half maximum for the (110) peak of the AlN–SiC solid solution decreased as the nitrogen pressure increased, which indicated the formation of a more homogeneous product.     

Pyrolysis of Poly(isopropyliminoalane) to Aluminum Nitride

The pyrolysis processes of poly(isopropyliminoalane) ((HAlN ⁱ Pr) _n ) were investigated, using mass spectrometry to analyze the gases and infrared spectroscopy to analyze the residual solids. The major mass loss (in the temperature range of 240°–540°C) consisted of two different pyrolysis stages. At the first stage (240°–320°C), (HAlN ⁱ Pr)₆ was detected continuously as a gas, and the precursor was converted to a cross-linked structure. A polymerization mechanism without a release of organic compounds has been proposed, and the formation of (HAlN ⁱ Pr)₆ during polymerization (besides its evaporation) has been suggested. The second stage (320°–560°C) involved the formation of various organic compounds, and radical processes for their formation were proposed.     

Whisker Toughening: A Comparison Between Aluminum Oxide and Silicon Nitride Toughened with Silicon Carbide

Two whisker-toughened materials have been studied, with the objective of identifying the mechanisms that provide the major contribution to toughness. It is concluded that, for composites with randomly oriented whiskers, bending failure of the whiskers obviates pullout, whereupon the major toughening mechanisms are the fracture energy consumed in creating the debonded interface and the stored strain energy in the whiskers, at failure, which is dissipated as acoustic waves. The toughening potential is thus limited. High toughness requires extensive pullout and, hence, aligned whiskers with low fracture energy interfaces.     

Oxidation Behavior of Liquid-Phase Sintered Silicon Carbide with Aluminum Nitride and Rare-Earth Oxides (Re2O3, where Re = Y, Er, Yb)

Silicon carbide (SiC) ceramics have been fabricated by hot-pressing and subsequent annealing under pressure with aluminum nitride (AlN) and rare-earth oxides (Y₂O₃, Er₂O₃, and Yb₂O₃) as sintering additives. The oxidation behavior of the SiC ceramics in air was characterized and compared with that of the SiC ceramics with yttrium–aluminum–garnet (YAG) and Al₂O₃–Y₂O₃–CaO (AYC). All SiC ceramics investigated herein showed a parabolic weight gain with oxidation time at 1400°C. The SiC ceramics sintered with AlN and rare-earth oxides showed superior oxidation resistance to those with YAG and Al₂O₃–Y₂O₃–CaO. SiC ceramics with AlN and Yb₂O₃ showed the best oxidation resistance of 0.4748 mg/cm² after oxidation at 1400°C for 192 h. The minimization of aluminum in the sintering additives was postulated as the prime factor contributing to the superior oxidation resistance of the resulting ceramics. A small cationic radius of rare-earth oxides, dissolution of nitrogen to the intergranular glassy film, and formation of disilicate crystalline phase as an oxidation product could also contribute to the superior oxidation resistance.     

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Spherical-Impact Damage and Strength Degradation in Silicon Carbide Whisker/Silicon Nitride Composites

The silicon carbide (SiC) whisker reinforcement of silicon nitride (Si₃N₄) improves fracture strength and toughness, hardness, and Young's modulus, resulting in higher resistance of the composites to sphere penetration and crack initiation at spherical impact. Sintered Si₃N₄ shows an elastic/plastic response and initiates median/radial cracks at 100 m/s impact velocity. SiC-whisker/Si₃N₄ composites, on the other hand, demonstrate an elastic response, with Hertzian cone crack initiation, only when impact velocity exceeds 280 m/s. The SiC-whisker/Si₃N₄ composites thus exhibit improved strength degradation versus critical impact velocity characteristics because of improved mechanical properties provided by the SiC whiskers.     

Silicon Nitride Derived from an Organometallic Polymeric Precursor: Preparation and Characterization

Partially crystalline Si₃N₄, with nanosized crystals and a specific surface area greater than 200 m²/g, is obtained by pyrolysis of a commercially available vinylic polysilane in a stream of anhydrous NH₃ to 1000°C. This polymer does not contain N initially. Crystallization to high-purity α-Si₃N₄ proceeds with additional heating above 1400°C under N₂. The changes in crystallinity, powder morphology, infrared spectra, and elemental compositions, for samples annealed from 1000° to 1600°C under N₂, are consistent with an amorphous-to-crystalline transformation. Although macroscopic consolidation and local densification occur at 1400°C, volatilization and accompanying weight loss limit bulk densification. The effect of temperature on specific surface area is examined and related to the sintering process. These results are applicable to pyrolysis, decomposition, and crystallization studies of ceramics synthesized by polymeric precursor routes.