A 350GHz Radial-Probe SIS Mixer for Astronomical Imaging Arrays

We have developed a 330-370GHz SIS mixer for small-format, heterodyne, astronomical imaging arrays. Fixed-tuned broadband operation is achieved by means of a superconducting radial waveguide probe. A horn-reflector antenna provides high-efficiency optical coupling. Using a variable-temperature cryogenic noise source, we measured a DSB system noise temperature of 32±1K. The mixer contributes 3±3K, supporting the theoretically-predicted result that the noise temperature of a DSB mixer can be less than hω/2κ (8.6K)     

A 400–500 GHz Balanced SIS Mixer with a Waveguide Quadrature Hybrid Coupler

We have developed a 400–500 GHz low-noise balanced SIS (Superconductor Insulator Superconductor) mixer, which is based on a waveguide RF quadrature hybrid coupler. The RF quadrature hybrid was designed and fabricated as a broadband hybrid with good performance at 4 K. The fabricated RF quadrature hybrid was measured at room temperature with a submillimeter vector network analyzer to check amplitude and phase imbalance between two output ports. Then the balanced mixer was assembled with the RF hybrid, two DSB mixers, and a 180° IF hybrid. Several important parameters such as noise temperature, LO power reduction, and IF spectra were measured. The LO power reduction is defined as how much LO power the balanced mixer saves compared with a typical single-ended mixer. The measured noise temperature of the balanced mixer was ~ 55 K at the band center which corresponds to ~ 3 times the quantum noise limit (hf/k) in DSB, and ~ 120 K at the band edges. The noise performance over LO frequency was almost the same as that of the worse DSB mixer used in the balanced mixer. In addition the LO power required for the balanced mixer is ~ 11 dB less than that of the single-ended mixers.     

Wide-band low noise MM-wave SIS mixers with a single tuning element

Several SIS quasiparticle mixers have been designed and tested for the frequency range from 80 to 115 GHz. The sliding backshort is the only adjustable RF tuning element. The RF filter reactance is used as a fixed RF matching element. A mixer which uses a single 2×2 μm² Pb-alloy junction in a quarter-height waveguide mount has a coupled conversion gain of G_M(DSB)=2.6±0.5 dB with an associated noise temperature of T_M(DSB)=16.4±1.8 K at the best DSB operation point. The receiver noise temperature T_R(DSB) is 27.5±0.8 K for the mixer test apparatus. This mixer provides a SSB receiver noise temperature below 50 K over the frequency range from 91 to 96 GHz, the minimum being T_R(SSB)=44±4 K. Another mixer with an array of five 5×5 μm² junctions in series in a full-height wave-guide mount has much lower noise temperature T_M(DSB)=6.6±1.6 K, but less gain G_M(DSB)=?5.1±0.5 dB.     

Measured mixer noise temperature and conversion loss of a cryogenic Schottky diode mixer near 800 GHz

We accurately measured the noise temperature and conversion loss of a cryogenically cooled Schottky diode operating near 800 GHz, using the UCB/MPE Submillimeter Receiver at the James Clerk Maxwell Telescope. The receiver temperature was in the range of the best we now routinely measure, 3150 K (DSB). Without correcting for optical loss or IF mismatch, the raw measurements set upper limits ofT _M=2850 K andL _M=9.1 dB (DSB), constant over at least a 1 GHz IF band centered at 6.4 GHz with an LO frequency of 803 GHz. Correction for estimated optical coupling and mismatch effects yieldsT _M=1600 K andL _M=5.5 dB (DSB) for the mixer diode itself. These values indicate that our receiver noise temperature is dominated by the corner cube antenna's optical efficiency and by mixer noise, but not by conversion loss or IF mismatch. The small fractional IF bandwidth, measured mixer IF band flatness from 2 to 8 GHz, and similarly good receiver temperatures at other IF frequencies imply that these values are representative over a range of frequencies near 800 GHz.     

A 210–280 GHz sis heterodyne receiver for the James Clerk Maxwell Telescope part I: Design and performance

We describe the design and performance of a 210–280 GHz SIS heterodyne receiver built for use on the Maxwell Telescope. The mixer utilises a lead alloy SIS tunnel junction, mounted in 4∶1 reduced height rectangular waveguide, and is tuned with a backshort in 2∶1 reduced height guide. The receiver has a receiver noise temperature of <200K (DSB) across the RF band from 210–270 GHz, with a best noise temperature measured in the laboratory of 113K (DSB) at 231 GHz. A prototype version of this receiver was successfully operated on the telescope in May 1989. By direct intercalibration with a Schottky diode receiver we deduced a best receiver noise temperature of 140K (DSB) at 245 GHz. Discrepancies between this figure and that derived from broad band thermal load calibration are discussed in the accompanying paper (Little et al., 1992, this issue).     

Noise performance at cryogenic temperatures at AlGaAs/InGaAs HEMT'swith 0.15-μm T-shaped WSix gates

T-shaped 0.15-μm WSi_x gate HEMTs have been fabricated on AlGaAs/InGaAs MBE wafers. Their S-parameters, output noise spectral density P_no, and noise temperatures T _e at cryogenic temperatures, were measured. The current gain cutoff frequency f_T increases from 61 GHz at 295 K to 87 GHz at 90 K. P_no and T_e measurements indicate that the hot-electron effect is noticeable at low temperatures at high drain current. At 30 GHz, the noise temperature is 19±3 K with an associated gain of 10.4 dB at the physical temperature of 20 K. The results demonstrate the great potential of AlGaAs/InGaAs HEMTs for low-temperature applications     

A 850-GHz waveguide receiver employing a niobium SIS junctionfabricated on a 1-μm Si3N4 membrane

We report on a 850-GHz superconducting-insulator-superconducting (SIS) heterodyne receiver employing an RF-tuned niobium tunnel junction with a current density of 14 kA/cm², fabricated on a 1-μm Si₃N₄ supporting membrane. Since the mixer is designed to be operated well above the superconducting gap frequency of niobium (2Δ/h≈690 GHz), special care has been taken to minimize niobium transmission-line losses. Both Fourier transform spectrometer (FTS) measurements of the direct detection performance and calculations of the IF output noise with the mixer operating in heterodyne mode, indicate an absorption loss in the niobium film of about 6.8 dB at 822 GHz. These results are in reasonably good agreement with the loss predicted by the Mattis-Bardeen theory in the extreme anomalous limit. From 800 to 830 GHz, we report uncorrected receiver noise temperatures of 518 or 514 K when we use Callen and Welton's law to calculate the input load temperatures. Over the same frequency range, the mixer has a 4-dB conversion loss and 265 K±10 K noise temperature. At 890 GHz, the sensitivity of the receiver has degraded to 900 K, which is primarily the result of increased niobium film loss in the RF matching network. When the mixer was cooled from 4.2 to 1.9 K, the receiver noise temperature improved about 20% 409-K double sideband (DSB). Approximately half of the receiver noise temperature improvement can be attributed to a lower mixer conversion loss, while the remainder is due to a reduction in the niobium film absorption loss. At 982 GHz, we measured a receiver noise temperature of 1916 K     

A Low-Noise 230 GHz SIS Receiver for Radio Astronomy Employing Untuned Nb/AlOx/Nb Tunnel Junctions

A heterodyne receiver based on a ～1/3 reduced height rectangular waveguide SIS mixer with two mechanical tuners has been built for astronomical observations of molecular transitions in the 230 GHz frequency band. The mixer used an untuned array (ωR_nC_j≈3, R_n≈70 Ω) of four Nb/AIOx/Nb tunnel junctions in series as a nonlinear mixing element. A reasonable balance between the input and output coupling efficiencies has been obtained by choosing the junction number N=4. The receiver exhibits DSB (Double Side Band) noise temperature around 50 K over a frequency range of more than 10 GHz centered at 230 GHz. The lowest system noise temperature of 38 K has been recorded at 232.5 GHz. Mainly by adjusting the subwaveguide backshort, the SSB (Single Side Band) operation with image rejection of ≥ 15 dB is obtained with the noise temperature as low as 50 K. In addition, the noise contribution from each receiver component has been studied further. The minimum SIS mixer noise temperature is estimated as 15 K, pretty close to the quantum limit ?v/k～11 K at 230 GHz. It is believed that the receiver noise temperatures presented are the lowest yet reported for a 230 GHz receiver using untuned junctions.     

A planar quasi-optical SIS receiver

A planar, quasi-optical SIS (superconductor-insulator-superconductor) receiver operating at 230 GHz is described. The receiver consists of a 2×5 array of half-wave dipole antennas with niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4-GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. Accurate measurements of the performance of single untuned array receiver elements are reported. A mixer noise temperature of 89 K DSB (double sideband), receiver noise temperature of 156 K DSB and conversion loss of 8 dB into a matched load have been obtained. This mixer noise temperature is approximately a factor of two larger than that of current state of the art waveguide mixers using untuned single junctions a the same frequency     

A superconducting tunnel junction receiver for 345 GHz

In this paper we discuss the design, fabrication, and testing of a quasiparticle tunnel junction receiver for use at 345 GHz. The design employs small area Nb/Nb-oxide/PbInAu edge junctions in order to keep the device capacitance small and maintain a modest value for ωR_NC. For optimura noise performance and beam properties the mixer is contained in a waveguide mounting structure. Our best sensitivity was obtained at 312 GHz where we measured a double sideband (DSB) noise temperature of 275 K. Noise temperatures of 400 K (DSB) or better were obtained out to 350 GHz.     

180–425 GHz low noise SIS waveguide receivers employing tuned Nb/AIO x /Nb tunnel junctions

We report recent results on a 20% reduced height 270–425 GHz SIS waveguide receiver employing a 0.49 µm² Nb/AlO _x /Nb tunnel junction. A 50% operating bandwidth is achieved by using a RF compensated junction mounted in a two-tuner reduced height waveguide mixer block. The junction uses an “end-loaded” tuning stub with two quarter-wave transformer sections. We demonstrate that the receiver can be tuned to give 0–2 dB of conversion gain and 50–80% quantum efficiency over parts of it's operating range. The measured instantaneous bandwidth of the receiver is ≈ 25 GHz which ensures virtually perfect double sideband mixer response. Best noise temperatures are typically obtained with a mixer conversion loss of 0.5 to 1.5 dB giving uncorrected receiver and mixer noise temperatures of 50K and 42K respectively at 300 and 400 GHz. The measured double sideband receiver noise temperature is less than 100K from 270 GHz to 425 GHz with a best value of 48K at 376 GHz, within a factor of five of the quantum limit. The 270–425 GHz receiver has a full 1 GHz IF passband and has been successfully installed at the Caltech Submillimeter Observatory in Hawaii. Preliminary tests of a similar junction design in a full height 230 GHz mixer block indicate large conversion gain and receiver noise temperatures below 50K DSB from 200–300 GHz. Best operation is again achieved with the mixer tuned for 0.5–1.5 dB conversion loss which at 258 GHz resulted in receiver and mixer noise temperature of 34K and 27K respectively.     

A Broad-Band Low-Noise Schottky Diode Full-Height Waveguide Mixer from 80 to 115 GHz

The RF matching problem in the input circuit of the mm-wavelength whisker contacted Schottky diode mixer is studied. The experimental results, obtained on the 3mm wavelength mixer mounts in the broad band of frequencies from 80 to 115 GHz are presented. It is shown that advantage in the receiver noise temperature may be realized by the use of a full-height instead of 1/4-reduced-height waveguide because of reduction loss in the mixer input circuit even beginning from the 3mm-wavelength. With a full-height waveguide mixer the double sideband (DSB) receiver noise temperature is 300 divided by 350K over the 85 to 110 GHz band. Input bandwidth of the fullheight waveguide mixer (cap delta f _S/f _SO greater than 30%) is equal to 1/2-and close to 1/4-reduced-height waveguide mixers.     

A low-noise fixed-tuned 300-360-GHz sub-harmonic mixer using planar Schottky diodes

This letter presents the design and fabrication of a low-noise fixed-tuned 300-360-GHz sub-harmonic mixer, featuring an anti-parallel pair of planar Schottky diodes fabricated by the University of Virginia and flip-chipped onto a suspended quartz-based microstrip circuit. The mixer exhibits a double side band (DSB) equivalent noise temperature lower than 900K over 18% of bandwidth (300-360-GHz), with 2 to 4.5mW of local oscillator (LO) power. At room temperature, a minimum DSB mixer noise temperature of 700K and conversion losses of 6.3dB are measured at 330GHz.     

Forward transit delay in In0.53Ga0.47Asheterojunction bipolar transistors with nonequilibrium electrontransport

The authors measured the microwave performance of high speed InP/In_0.53Ga_0.47As heterojunction bipolar transistors in the temperature range 55 K⩽T⩽340 K. The extrinsic unity current gain cutoff frequency is 130 GHz at 340 K, increasing to 300 GHz at 55 K. The intrinsic emitter-collector forward delay decreases with decreasing temperature from 0.5 ps at 340 K to a saturated value of 0.28 ps for ⩽150 K. Such behavior may be explained only by the presence of nonequilibrium electron transport in the base and collector of the device     

A 275–425-GHz Tunerless Waveguide Receiver Based on AlN-Barrier SIS Technology

We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006.     

A 275–370 GHz Receiver Employing Novel Probe Structure

We present the results of the development of a 275–370 GHz, fixed-tuned double sideband (DSB) receiver based on superconductor-insulator-superconductor (SIS) junction mixer. The mixer block uses a full height rectangular waveguide and employs a novel radial-like probe structure with integrated bias-T. The measured uncorrected receiver noise temperature is 30–50 K corresponding to about 2–3 quantum noise across the full frequency band with an IF from 3.8 to 7.6 GHz. The mixer is to be used on the Atacama Pathfinder EXperiment (APEX) submillimeter telescope in Chile.     

Simple 1 MM Receivers with a Fixed Tuned Double Sideband SIS Mixer and a Wideband INP MMIC Amplifier

We report on techniques to broaden the intermediate frequency (IF) bandwidth of the Berkeley‐Illinois‐Maryland Array (BIMA) 1mm Superconductor‐Insulator‐Superconductor (SIS) heterodyne receivers by combining fixed tuned Double Side Band (DSB) SIS mixers and wideband Monolithic Microwave Integrated Circuit (MMIC) IF amplifiers. To obtain the flattest receiver gain across the IF band we tested three schemes for keeping the mixer and amplifier as electrically close as possible. In Receiver I, we connected separate mixer and MMIC modules by a 1 ″ stainless steel SMA elbow. In Receiver II, we integrated mixer and MMIC into a modified BIMA mixer module. In Receiver III, we devised a thermally split block in which mixer and MMIC can be maintained at different temperatures–in this receiver module the mixer at 4 K sees very little of the 10–20 mW heat load of the biased MMIC at 10 K. The best average receiver noise we achieved by combining SIS mixer and MMIC amplifier is 45 ‐50 K DSB for ν_LO = 215–240 GHz and below 80 K DSB for ν_LO = 205 ‐ 270 GHz. Over an IF frequency band of 1 – 4 GHz we have demonstrated receiver DSB noise temperatures of 40 – 60 K. Of the three receiver schemes, we feel Receiver III shows the most promise for continued development.     

Low noise SIS mixer for 230 GHz receivers of plateau de bure interferometer

We present a SIS mixer developed for 200 – 250 GHz band receivers of Plateau de Bure Interferometer. We demonstrate the minimum DSB receiver noise of 20 K at 220 GHz. The average receiver noise of 25 K is possible in 200 – 250 GHz range. The receiver conversion gain and output noise instability of 10^?4 on the time scale of 1 minute is comparable with the Shottky receivers performance. The minimum measured SIS mixer noise of about 10 K is close to the quantum limit. The waveguide SIS mixer with a single backshort has two junction array with inductively tuned junctions. The Nb/Al Oxide/Nb SIS junctions are 2.24 µm² each with the Josephson critical current density of 3.2 KA/cm². The thermal properties of the SIS mixer are studied. The mixer band of the low noise operation is in a good agreement with the design requirements.     

Noise properties of HTS Josephson mixers at 345 GHz and operating temperatures at 20 K

The authors report on the mixing properties of high-temperature superconductor bicrystal Josephson junctions at 345 GHz and high-operating temperatures. A variable backshort and E-plane tuner enabled the control of impedance matching between the junction and the RF environment. The local oscillator frequency and intermediate frequency were 345 and 1.4 GHz, respectively. The double-side band (DSB) mixer noise temperature and the conversion efficiency were determined using the hot/cold method. The authors observed that the noise temperature was strongly dependent on the matching conditions. The lowest noise temperatures were observed for tuner positions supporting the formation of a subharmonic step which appeared between the zeroth and first Shapiro step. At T = 20 K they obtained a lowest DSB mixer noise temperature of 1003 K and a conversion efficiency of -1.2 dB. They have investigated the dependence of the noise temperature on the operating temperature in detail. The impact of resonances on the device performance will be discussed.     

0.22 THz宽带混频电路研究

基于中国电子科技集团公司第十三研究所的反向并联肖特基二极管,采用电磁场和电路软件联合仿真,完成了0.22 THz分谐波混频电路设计。在固定中频输出频率10 MHz的条件下测试了混频电路的变频损耗,在175~235 GHz共60 GHz带宽内双边带变频损耗小于15 dB,在196 GHz处最佳变频损耗为8.5 dB。测试结果与仿真结果趋势吻合良好。基于冷热负载,测试了分谐波混频电路的噪声温度,当本振功率为5.7 mW时,在216 GHz处双边带噪声温度为1 200 K。