ZnO纳米棒水热法制备及其发光性能

采用水热法在玻璃基底上成功制备出了ZnO纳米棒.用x射线衍射仪(xRD)和扫描电子显微镜(SEM)对ZnO纳米棒的晶体结构和表面形貌进行了表征,初步探讨了ZnO纳米棒的生长机理;同时对ZnO纳米棒的光致发光性能进行测量,分析了水热温度和反应时间对ZnO纳米棒光致发光性能的影响.结果表明:ZnO纳米棒呈现六方纤锌矿结构,具有沿(002)晶面择优生长特征;随着水热反应温度的升高,ZnO纳米棒的发光强度逐渐增强;随着反应时间的延长,ZnO纳米棒发光强度在1～3 h内增强,而在3～10 h反而减弱.     

高压PLD法生长ZnO和Zn1-xMgxO纳米棒及其荧光性能

利用自主设计、组装的高压脉冲激光沉积(PLD)系统,研究了温度、靶材、催化剂厚度等生长参数对ZnO和Zn1-xMgxO纳米棒生长的影响,并对ZnO纳米棒的生长机理和Zn1-xMgxO纳米棒的光致发光性能进行了探讨.实验发现,当金膜催化剂厚度为2 nm、温度为925℃时,在单晶Si衬底上生长了直径均匀的ZnO纳米棒阵列,且具有明显的(002)择优生长取向.实验发现温度与催化剂厚度是影响ZnO纳米棒的直径和生长密度的重要因素.据此提出了ZnO纳米棒阵列的高压PLD生长过程应为气–液–固和气–固相结合的生长机制.通过在ZnO靶材中掺入氧化镁,获得了Zn1-xMgxO纳米线和纳米带结构,但生长无明显的择优取向.光致发光谱测量表明,镁掺杂明显增大了ZnO的带隙,但也在其禁带中引入了缺陷能级,导致可见发光明显增强.     

低温水热法生长ZnO纳米棒阵列的电子结构及光学特性(英文)

使用低温水热法在Si衬底上生长ZnO纳米棒阵列.通过X射线衍射和扫描电子显微镜对ZnO纳米棒的结晶性和形貌进行观测.结果表明,六棱柱形ZnO纳米棒沿c轴方向的阵列性良好,且均匀致密的生长在衬底上.室温光致发光谱表明应用低温水热法可以得到光学性质良好的ZnO纳米棒阵列.使用同步辐射对ZnO纳米棒阵列的氧K带边进行X射线吸收近带边谱测量,研究了不同半径ZnO纳米棒阵列的局部电子结构及其半径对电子结构的影响.另外,对ZnO纳米棒及ZnO薄膜的局部电子结构进行了对比研究.     

ZnO棒晶阵列薄膜的水溶液法生长

采用低温水溶液法, 在涂覆ZnO种子层的ITO基底上制备了高度取向的ZnO棒晶阵列, 考察了棒晶的生长过程以及生长液浓度、生长时间对薄膜形貌的影响. 用扫描电子显微镜(SEM),X射线衍射(XRD), 场发射扫描显微镜(FESEM)以及高分辨透射电镜(HRTEM)对ZnO纳米棒的结构和形貌进行了表征. 结果表明, ZnO薄膜的形貌强烈依赖于生长溶液的浓度和生长时间, ZnO棒是单晶, 属于六方纤锌矿结构, 具有沿(002)晶面择优生长的特征, 生长方式为层层台阶生长, 反应时间达到48h后, 通过二次生长形成特殊的板状晶.     

以玻璃片为基底制备氧化锌纳米棒

以Zn(NO3)2和C6H12N4为原料,在玻璃基片上用均匀沉淀法合成ZnO纳米棒.采用正交实验考察了反应溶液浓度、反应时间、反应温度对产品结构的影响,通过扫描电子显微镜(SEM)、X射线衍射(XRD)对产品进行表征,研究了不同制备条件下产品的形貌变化,探讨了Zn纳米棒的生长机制,确定了最佳工艺参数.研究结果表明,反应溶液浓度0.01mol/L、温度90℃、反应时间3h为最佳反应条件,得到尺度均匀的ZnO纳米棒,最小直径为80nm左右,推测ZnO纳米棒的生长机制为SLS型.     

ZnO纳米棒为模板的TiO2纳米管制备及其场发射性能研究

以水热法生长ZnO纳米棒阵列为模板,利用液相沉积法成功制备了TiO2纳米管阵列,并系统研究了液相沉积液浓度和沉积时间对ZnO纳米棒的溶解情况,以及所制备TiO2纳米管阵列的场发射性能。实验结果表明:硼酸浓度越大、沉积时间越长,对ZnO纳米棒的溶解作用越明显,因而越不利于TiO2纳米管的制备。利用该种方法制备的TiO2纳米管长径比和致密性可通过ZnO纳米棒的水热生长条件来控制,本实验制备的TiO2纳米管具有优异的场发射性能,其开启场强为4.60 V/μm,场增强因子为10239。     

化学溶液法外延组装ZnO分级纳米结构

采用气相法、液相法相结合的方法外延组装了一种形貌新颖的复杂ZnO分级纳米结构--"纳米毛刷".首先用热蒸发的方法制备了宽面为极性面的ZnO纳米带,然后采用化学溶液法,在强碱溶液中在ZnO纳米带的极性面上外延生长Zno纳米棒阵列,实现了ZnO分级纳米结构"由下而上"地外延组装.采用负离子配位多面体生长基元模型讨论了ZnO分级纳米结构的外延组装机理.这种ZnO分级结构的实现,可望作为ZnO纳米器件的原型材料构建新型光电器件.     

脉冲激光沉积制备ZnO纳米棒的研究进展

综述了脉冲激光沉积法制备ZnO纳米棒的研究进展.介绍了不同制备参数条件下ZnO纳米棒的形貌特征、性质及其生长机理,阐述了利用脉冲激光沉积制备高质量ZnO纳米棒及阵列的条件,为ZnO纳米棒的制备及性质的深入研究提供了有益的参考.     

不同氧流量条件下ZnO纳米棒阵列的形成及机理分析

采用脉冲激光沉积结合化学气相沉积方法在p-Si(111)衬底上制备了呈直立生长的ZnO纳米棒阵列,并且研究了氧流量对ZnO纳米棒尺寸、结晶特性等性质的影响。研究结果表明,在没有氧气的环境下无法生长ZnO纳米棒;随氧流量减小,不同晶面上ZnO生长速率的不同导致ZnO纳米棒长度减小、直径变粗、结晶质量变差、纳米棒面密度减小。氧流量的减小使得ZnO纳米棒中的氧空位缺陷含量增加,导致位于约520nm处的绿光峰增强。     

从无序到有序ZnO纳米棒的制备

采用3种不同的方法在氧化铟锡玻璃衬底上沉积一层ZnO纳米晶薄膜,然后采用改进的水热法在制备有ZnO纳米晶薄膜的衬底上生长ZnO纳米棒,实现了纳米棒从无序到有序的生长.从XRD和SEM图可得,有序的纳米棒沿(002)择优取向,基本与衬底垂直,平均直径约为40nm.     

Growth kinetics of electroless NixCo1 − x deposition

Various electroless Ni-Co-P films were deposited on silicon substrates in electroless baths using sodium hypophosphite as reducing agent and nickel and cobalt sulfates as ion source at pH value of 9 and temperature from 55 to 85 °C. The effect of the atomic ratio of Co to Ni + Co in baths on the growth behavior of the electroless Ni-Co-P films was studied. The various electroless Ni-Co-P films were characterized by scanning electron microscopy for the morphology, transmission electron microscopy for the microstructure and thickness, and energy dispersion spectroscopy for the composition. The results showed that the growth rate of the electroless Ni-Co-P films is generally increased with increase of the bath temperature and is decreased with atomic ratio of Co to Ni + Co in baths. The reduction of the Co²⁺ ion is easier than the Ni²⁺ ion in various baths, except for the bath with 0.9 atomic ratio of Co to Co + Ni.     

On the equations of motion for rigid bodies with surface growth

Appropriate balance equations are formulated for a body whose geometry, mass and inertia vary due to surface growth. The distance between any two particles of the body is assumed to be fixed and hence several interesting simplifications of the balance laws occur. In particular, a set of ordinary differential equations for the attitude and position of the body are developed. The dynamics predicted by these equations for a body moving on an incline, and gathering mass as it does so, are discussed.     

Growth of unidirectional potassium dihydrogen orthophosphate single crystal by SR method and its characterization

Unidirectional <100> potassium dihydrogen orthophosphate (KDP) single crystals were grown for the first time by Sankaranarayanan-Ramasamy (SR) method. The <100> oriented seed crystals were mounted at the bottom of the glass ampoules and the crystal of 15 mm diameter, 65 mm height were grown by SR method. The grown crystals were characterized by high-resolution X-ray diffraction (HRXRD), etching studies. The HRXRD analysis indicates that the crystalline perfection is excellent without having any very low angle internal structural grain boundaries. Dislocation density is less in SR grown KDP compared to conventional method grown KDP.     

Study on the Relationship between Lamellar Spacing and Growth Rate inthe Regular Eutectic Growthby Monte-Carlo Simulation

A modified Monte-Carlo(MC) method to simulate the regular growth of binary eutectic alloys is presented. It is found that the growth rate has a linear dependence on the chemical potential difference between the solid and liquid; the relation between the lamellar spacing A and growth rate R accords well with the prediction of Jackson-Hunt(JH) theory unless the growth rate is very low.     

Study on the Relationship Lamellar Spacing and Growth Rate in the Regular Eutectic Growth by Monte—Carlo Simulation

A modified Monte-Carlo(MC) method to simulate the regular growth of binary eutectic alloys is presented.It is found that the growth rate has a linear dependence on the chemical potemtial difference between the solid and liquid ,the relation between the lamellar spacing λ and growth rate R accords well with the prediction of Jackson-Hunt(JH) theory unless the growth rate is very low.     

Electrochemical characterization of electrodeposited carbon nanotubes

Carbon nanotubes were electrodeposited in acetonitrile solution at room temperature using Cu, and Fe-Ni nanoparticles as nucleation sites on HF-etched Si(100) wafer substrate. The electrochemical behavior of the deposition was investigated by voltammetry and chronoamperometry techniques. In order to obtain the optimum growth condition, the deposition critical parameters including current density range, potential and time were studied and calculated. Carbon nanotubes with approximate external diameter of 40-100 nm were fabricated under potentiostatic condition and diffusion control at − 20 V in 4-6 h. The film crystallinity was investigated by means of X-ray diffraction and the tubes structure was revealed using scanning electron microscope and transmission electron microscope images. Raman spectroscopy was also employed to characterize the nanostructural features and single wall carbon nanotubes were detected.     

Effect of growth temperature on structure and optical characters of NiO films fabricated by PA-MOCVD

We report the effect of growth temperature on structure, optical and electrical properties of NiO films fabricated by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD). It is found that the crystal quality of the NiO films has been improved by increasing the growth temperature. When the temperature is low, the NiO film is composed of small and anomalous grains, whereas the film is composed of grains with a cubic shape following the NaCl-type structure when the temperature is higher. The samples marked A-D under the growth temperature of 510, 540, 570 and 600 °C have optical band gap values of 3.93 eV, 3.82 eV, 3.73 eV and 3.55 eV, respectively. Comparatively, the controllable electrical properties of the films can be achieved by the variation of crystal quality arises from the growth temperature.     

Growth mechanism of Si nodules on BPSG

Si nodules that appear in the metal electrodes of integrated circuits often reduce their reliability. The growth process of Si nodules generated on boro-phospho silicate glass (BPSG) in the Al-1 wt.% Si film electrode has been investigated. The Al-1 wt.% Si films sputter deposited on BPSG films were annealed at 723 K for 30 min according to the usual integrated circuit procedure. Scanning electron microscopy and atomic force microscopy observations revealed that the Si nodules seemed to precipitate along Al grain boundaries particularly on the BPSG film and their shape appeared pyramidal. To make clear the mechanism of the growth of the Si nodule on the BPSG film, the interface between the Si nodule and the BPSG film was investigated in detail by transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. As the result, it was found that there existed an amorphous silicon oxide region in the central part of the interface under the Si nodule. The amorphous silicon oxide is considered to be formed by diffusion of oxygen from the BPSG film to the Si nodule during the annealing. The amorphous silicon oxide may act as an embryo for the formation of the Si nodule and the migration of Si atoms dissolved in Al towards the embryo seems to enhance the growth of the Si nodule.     

流化喷雾造粒法制取低糖速溶豆粉的研究（Ⅰ）──流化喷雾造粒机理的实验研究

本文在间歇式流化喷雾造粒床内，研究了豆粉流化造粒的颗粒生长机理和规律。考察了床层温度、过剩流化气速、料液的黏度和流率、品种尺寸、晶种量和晶种的类别等操作条件对颗粒生长速率的影响，寻找到较好的工艺操作条件。