Poly (methyl methacrylate) (PMMA) is a very good option for electron-beam resists, but suffers from poor radiation sensitivity and poor plasma etch resistance. These problems can be offset, at least in part, by functionalizing the PMMA with photo-labile, plasma etch-resistance groups. Toward this end, a series of N-methacryloxy phthalimides with different substitutuents (methyl, nitro, tetrahydrogen and dichloro) were synthesized as possible useful radiation-sensitive resists. The work discussed here focuses on the cycloimido group, which can be easily attached to methacrylic acid to form a radiation-sensitive resist material for use in electron beam lithography. The labile N–O bond of the cycloimido group, upon exposure to radiation, cleaves and forms a radical on the main chain of the polymer, which leads to polymer degradation. Cursory evaluations showed that these new materials are deserving of further study. 相似文献
In this study we introduce the use of thiol-ene photopolymers as shape memory polymer systems. The thiol-ene polymer networks are compared to a commonly utilized acrylic shape memory polymer and shown to have significantly improved properties for two different thiol-ene based polymer formulations. Using thermomechanical and mechanical analysis, we demonstrate that thiol-ene based shape memory polymer systems have comparable thermomechanical properties while also exhibiting a number of advantageous properties due to the thiol-ene polymerization mechanism which results in the formation of a homogeneous polymer network with low shrinkage stress and negligible oxygen inhibition. The resulting thiol-ene shape memory polymer systems are tough and flexible as compared to the acrylic counterparts. The polymers evaluated in this study were engineered to have a glass transition temperature between 30 and 40 °C, exhibited free strain recovery of greater than 96% and constrained stress recovery of 100%. The thiol-ene polymers exhibited excellent shape fixity and a rapid and distinct shape memory actuation response. 相似文献
In this paper, we prepared a silicon-containing polymer nanosheet, poly(neo-pentylmethacrylamide-co-4-(trimethylsilyl)phenyl)methacrylamide (p(nPMA/SiPhMA)), for positive-tone photoresist application. p(nPMA/SiPhMA) forms a stable monolayer at the air-water interface and the polymer monolayer can be transferred onto a solid substrate using the Langmuir-Blodgett technique, when the SiPhMA molar contents are below 38%. Sixty layers of p(nPMA/SiPhMA) nanosheet were deposited onto a silicon substrate and deep UV was irradiated through a photomask to the deposited film. After development of the irradiated film with alkaline solution, a positive-tone fine pattern with a 0.75 μm resolution, which is the highest resolution of the photomask, was clearly drawn. UV-vis and FT-IR spectroscopy indicates the formation of alkaline soluble groups, such as CO and Si-O-Si after photodecomposition. Moreover, p(nPMA/PhSiMA) polymer nanosheet shows three times higher oxygen etching resistance compared to poly(methylmethacrylate) (PMMA). The high plasma resistance of the polymer nanosheet film is caused by not only the presence of Si atom in the film but also a closely packed and high molecular orientated structure of the polymer nanosheets. 相似文献
A gas‐permeable cellulose template for microimprint lithography has been synthesized and characterized for the reduction of template damage and gas trapping caused by solvents and oxygen generated from cross‐linked materials. The 5 μm line‐pattern failure of the microimprinted UV cross‐linked liquid materials with 4.7 wt% acetone as a volatile solvent is solved by using the gas‐permeable cellulose template because of its increased oxygen permeability. The gas‐permeable cellulose template also allows the use of volatile solvents with high coating property and solubility into the microimprinted materials instead of the compounds and plastic resins conventionally used in mold injection.
In this paper, we present a modified nanosphere lithographic scheme that is based on the self-assembly and electroforming techniques. The scheme was demonstrated to fabricate a nickel template of ordered nanobowl arrays together with a nickel nanostructure array-patterned glass substrate. The hemispherical nanobowls exhibit uniform sizes and smooth interior surfaces, and the shallow nanobowls with a flat bottom on the glass substrate are interconnected as a net structure with uniform thickness. A multiphysics model based on the level set method (LSM) was built up to understand this fabricating process by tracking the interface between the growing nickel and the electrolyte. The fabricated nickel nanobowl template can be used as a mold of long lifetime in soft lithography due to the high strength of nickel. The nanostructure–patterned glass substrate can be used in optical and magnetic devices due to their shape effects. This fabrication scheme can also be extended to a wide range of metals and alloys. 相似文献
This article is one of a number of reviews in a special issue to honor Prof. Dr. Ian Manners of the University of Bristol,
UK, for his outstanding contributions in the field of organometallic polymers. The focus of this review is on the syntheses,
properties, and characterization of ferrocene-containing liquid crystalline polymers in which ferrocene moieties are in or
pendent to the backbone and also dendrimers and [60]fullerene-ferrocene liquid crystalline materials. 相似文献
An alternative method is presented for fabricating an antireflective nanostructure array using nanosilver colloidal lithography. Spin coating was used to produce the multilayered silver nanoparticles, which grew by self-assembly and were transformed into randomly distributed nanosilver islands through the thermodynamic action of dewetting and Oswald ripening. The average size and coverage rate of the islands increased with concentration in the range of 50–90 nm and 40–65%, respectively. The nanosilver islands were critically affected by concentration and spin speed. The effects of these two parameters were investigated, after etching and wet removal of nanosilver residues. The reflection nearly disappeared in the ultraviolet wavelength range and was 17% of the reflection of a bare silicon wafer in the visible range. 相似文献