可控电参数低位错InP单晶生长及性质研究

本文详细介绍了用 LEC 法生长 InP 单晶时,利用“热场杂质效应”生长出载流子浓度在1～30×10~(17)cm~(-3)范围内可控,位错密度为0～10~4cm~(-2)、直径≤40mm 的 InP 单晶。得到一种显示固液界面的新方法。论证了构成位错蚀坑晶面的空间取向,计算出有孪晶出现时,寄生晶体的生长方向偏离〈111〉方向38°56′,寄生生长面为{115}面。     

杂质Zn在InP中的扩散机制

介绍了杂质Zn在InP中的两种扩散机制,间隙-替代机制和Kick-out机制.InP为n型时,扩散机制为间隙-替代式;InP为p型时,扩散机制为Kick-out式.重点介绍了三种不同模型,解释Zn在InP中通过间隙-替代机制进行扩散时,空穴浓度与Zn浓度不同的原因,并评价了三种模型.     

InP中的深能级杂质与缺陷

综述了近年来关于InP中深能级缺陷和杂质的研究工作。讨论了深能级杂质及缺陷对InP材料性能的重要影响;介绍了深能级瞬态谱(DLTS)、光致发光谱(PL)、热激电流谱(TSC)、正电子寿命谱(PAS)、正电子深能级瞬态谱(PDLTS)等几种研究深中心的方法在研究InP时的某些特点;综合深能级缺陷和电学性质的测试结果,证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等与材料中一些深能级缺陷的含量密切相关;分析了对掺铁和非掺退火两种半绝缘InP材料中深能级缺陷对电学补偿的影响;评述了对InP中的一些深中心所取得的研究成果和半绝缘InP的形成机理。     

炉内大容量合成高纯InP

介绍了在高压单晶炉内每次直接合成1000g InP的新工艺。对合成的InP进行测试表明,非掺杂InP的载流子浓度一般为3～6×10~(15)cm~(-3),迁移率4200cm~2/V.s以上,最高可达4700～4900cm~2/V.s,其纯度优于用水平法(HB)合成的InP。     

新的双层介质的InP MIS结构

本文提出了一种由真空蒸发法淀积的SiO薄膜和在P_2O_5气氛中进行InP的热氧化而形成的 InP本体氧化层(native oxide)所组成的新的双层介质 InP MIS结构.通过高频C-V特性的测量得到了较好的界面特性,其中最小界面态密度达8.5×10~(10)cm~(-2)eV~(-1).本文还通过俄歇电子能谱(AES)的测量探讨了上述InP的本体氧化层在改善InP MIS结构的界面特性方面所起的作用.     

AllnAs/InP异质隧道结的设计与器件应用

应用高掺杂pn结和异质结能带理论,计算了AllnAs/InP异质隧道结的电学特性,发现其性能优于AllnAS和InP同质隧道结,并得出了掺杂浓度与隧道电流的关系曲线.采用气态源分子束外延(GSMBE)设备生长了面电阻率约为10~(-4)Ω·cm~2的AllnAs/InP异质隧道结结构,并应用于制作1.3μm垂直腔面发射激光器(VCSEL),器件在室温下脉冲激射.

Abstract：

By using high doping pn junction and heterojunction energy band model,electrical properties of AlInAs/InP tunnel junction are calculated.It is found that AlInAs/InP hetero-tunnel junction is superior to AlInAs or InP homo-tunnel junction,and the influence of doping level on the tunneling current is discussed.AlInAs/InP tunnel junction structures are grown by gas-source molecular-beam epitaxy (GSMBE) with the specific contact resistivity of about 10~(-4) Ω·cm~2.Then such structures are adopted in the fabrication of 1.3 μm vertical-cavity surface-emitting lasers(VCSEL).     

磷化铟单晶衬底的缺陷控制和高质量表面制备

分析研究了一些缺陷对InP单晶衬底的影响,包括团状结构位错的产生及其对晶格完整性的影响,坑状微缺陷、晶片抛光损伤和残留杂质的清洗腐蚀等.对这些缺陷的形成原因和抑制途径进行了分析.在此基础上获得了"开盒即用(EPI-READY)"、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片.     

磷化铟单晶衬底的缺陷控制和高质量表面制备

分析研究了一些缺陷对InP单晶衬底的影响,包括团状结构位错的产生及其对晶格完整性的影响,坑状微缺陷、晶片抛光损伤和残留杂质的清洗腐蚀等.对这些缺陷的形成原因和抑制途径进行了分析.在此基础上获得了"开盒即用(EPI-READY)"、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片.     

InP上Al膜的阳极氧化及其特性研究

本文报道了半导体InP上Al膜阳极氧化的研究,并用AES,V-V,DLTS和椭圆仪等测试方法研究了氧化膜的稳定性、电学特性、组分的纵向分布以及Al_2O_3/InP的界面特性,研究结果表明,阳极氧化Al_2O_3的介电常数为11～12,Al_2O_3/InP界面存在一个能量上连续分布的电子陷阱,DLTS峰值对应的能级位置约在E_c-E_c=0.5eV,其俘获截面约为10~(-15)cm~2,Al_2O_3/InP的界面态密度为10~(11)cm~(-2)eV~(-1)。阳极氧化Al_2O_3的稳定性要比InP自身氧化物好得多,更适于用作器件的钝化保护和扩散掩蔽膜。     

烘烤温度对Ga_(0.47)In_(0.53)As液相外延纯度的影响

本文报导(100)InP衬底上液相外延生长的高纯GaInAs及其性质。可重复地获得低载流子浓度(3.8～5.4×10~(14)cm~(-3))和高电子迁移率(在77K,为47000～51000cm~2V·s)。研究了源Ga-In-As熔体烘烤温度对外延层纯度的影响。光致发光研究和van der Pauw测量的结果表明,通过适当的热处理可去除源溶液中的受主杂质和施主杂质。     

The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE

A number of factors contribute to the high n-type background carrier concentration (high 10¹⁵ to low 10¹⁶ cm⁻³) measured in MBE Ga_0.47In_0.53As lattice-matched to InP. The results of this study indicate that the outdiffusion of impurities from InP substrates into GalnAs epitaxial layers can account for as much as two-thirds of the background carrier concentration and can reduce mobilities by as much as 40%. These impurities and/or defects can be gettered at the surfaces of the InP by heat treatment and then removed by polishing. The GalnAs epitaxial layers grown on the heat-treated substrates have significantly improved electrical properties. Hall and SIMS measurements indicate that both donors and acceptors outdiffuse into the epitaxial layers during growth resulting in heavily compensated layers with reduced mobilities. The dominant donor species was identified by SIMS as Si, and the dominant acceptors as Fe, Cr and Mn.     

Tellurium induced lattice dilation in OMVPE grown InP

For organometallic vapor phase epitaxial (OMVPE) grown InP, the change in lattice constant is measured as a function of tellurium (Te) dopant concentration. We observe ~0.15% dilation in the InP lattice constant at a Te concentration of ~10²⁰ cm^-3. Our measurements are compared to predictions from Vegard’s Law.     

Low leakage nearly ideal Schottky barriers to n-InP

Au Schottky barriers incorporating an interfacial native oxide have been formed on n type InP. Depending on oxide thickness and annealing conditions these devices exhibit high barrier heights, ?B > 0.75 eV, ideality factors n as low as 1.04 and very low saturation current densities <~ 10?7 Acm?2.     

Electrical characterization of high purity InGaAsP alloys

In_xGa_1-xAs_yP_1-y layers grown by liquid phase epitaxy on InP substrates were characterized by Hall effect between 4 and 300K. The thermal activation energy of donor impurities was estimated from the temperature dependence of the free electron concentration ; it was found to increase with phosphorus concentration from less than 1meV in InGaAs to about 2.5meV in InP. Evidence for impurity conduction was also observed in some samples at the lowest temperatures. The mobility analysis led to an estimation of the alloy scattering potential in the whole range of compositions 0≤y≤l. At temperatures below 10K, we observed avalanche effect due to impact ionization of electrons from shallow donor impurities into the conduction band.     

Very high purity In0.53Ga0.47As grown by molecular beam epitaxy

Very high purity In0_0.53Ga_0.47As layers were grown by molecular beam epitaxy (MBE). Origins ofn-type impurities in undoped In_0.53Ga_0.47As grown on an InP:Fe substrate were systematically examined. The most possible origins were impurities diffusing from the InP:Fe substrate and those contained in As molecular beam. These impurities were dramatically reduced by using an InAlAs buffer layer and a growth condition of high substrate temperature and low As pressure. The lowest electron concentration of the In0_0.53Ga_0.47As layer wasn = 1.8 × 10¹³ cm_-3 with mobilitiesμ = 15200 cm²/Vs at 300 K andμ = 104000 cm²/Vs at 77 K.     

Hydrogen passivation of high purity n-type InP

It has been shown for the first time that the concentration of ionised impurities in n-type InP can be reduced by incorporation of atomic hydrogen. The temperature dependence of the electron mobility indicates that donors as well as acceptors are passivated, although the hydrogen is more strongly bound when passivating acceptors.<>