共查询到19条相似文献,搜索用时 656 毫秒
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石墨烯的高晶体质量、高电导率、单层结构以及与有机半导体的良好兼容性使其成为纳米器件和分子器件的理想电极材料,纳米间隙电极对是构筑纳米器件的基础,发展了两种制备石墨烯纳米间隙电极对的方法——纳米线和金丝交替掩膜法以及原子力针尖裁剪法,其过程简单,制备的石墨烯间隙为100~200 nm.石墨烯纳米间隙电极对是制备纳米器件、... 相似文献
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化学沉淀法制备纳米Ni(OH)2电极材料及其工艺参数的优化设计 总被引:2,自引:0,他引:2
通过化学沉淀法成功制备了纳米复合氢氧化镍粉体,测得纳米复合氢氧化镍粉体的振实密度低于球镍粉体,但其压实密度明显高于后者;相应镍电极的密度也超过常规球镍电极.实验得出了制备纳米氢氧化镍粉体的温度、氨水浓度与pH值的最佳参数.最终制备出的纳米复合电极材料的压实密度与质量电化学容量两项指标均比常规球镍高15%以上. 相似文献
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通过化学沉淀法成功制备了纳米复合氢氧化镍粉体,测得纳米复合氢氧化镍粉体的振实密度低于球镍粉体,但其压实密度明显高于后者;相应镍电极的密度也超过常规球镍电极。实验得出了制备纳米氢氧化镍粉体的温度、氨水浓度与pH值的最佳参数。最终制备出的纳米复合电极材料的压实密度与质量电化学容量两项指标均比常规球镍高15%以上。 相似文献
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为满足轻薄化、柔性化和可穿戴化电子产品对柔性储能器件的需求,运用静电纺丝技术与滚筒接收方法得到PAN/MnCl2复合纳米纤维膜,再经特定装置加捻、预氧化、碳化生成复合碳纳米纤维束CNFs/MnO2,利用恒电位沉积方法在其表面形成一层聚苯胺PANI,制备了以CNFs/MnO2/PANI为电极材料的线状超级电容器,搭建三电极测试体系平台,运用恒流充放电、循环伏安法测试,数据显示本方法制备的超级电容器比容量可达到 142.31F/g,且具有一定的柔韧性和循环性。 相似文献
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A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly crosslinked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate. 相似文献
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Zhang Yang Zhang Renping Han Weihua Liu Jian Yang Xiang Wang Ying Li Chian Chiu Yang Fuhua 《半导体学报》2009,30(11)
A two-step exposure method to effectively reduce the proximity effect in fabricating nanometer-spaced nanopillars is presented. In this method, nanopillar patterns on poly-methylmethacrylate (PMMA) were partly crosslinked in the first-step exposure. After development, PMMA between nanopillar patterns was removed, and hence the proximity effect would not take place there in the subsequent exposure. In the second-step exposure, PMMA masks were completely cross-linked to achieve good resistance in inductively coupled plasma etching. Accurate pattern transfer of rows of nanopillars with spacing down to 40 nm was realized on a silicon-on-insulator substrate. 相似文献
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PZT薄膜的制备及其与MEMS工艺的兼容性 总被引:2,自引:0,他引:2
用溶胶-凝胶技术在Pt/Ti/SiO2/Si上制备了PZT薄膜,并采用剥离技术与热处理的方法解决了Pt电极的图形化,在结晶热处理前,利用PZT腐蚀液对PZT进行图形化腐蚀.分别用SEM,XRD,EDX对电极和PZT薄膜的相貌、相结构以及化学组分进行了分析.结果表明:所制备的PZT薄膜具有完全的钙钛矿型结构;这种图形化的工艺方法大大改善了电极和PZT的图形化条件,在不影响电极和PZT性能的同时,提高了电极和PZT的图形质量;底电极和PZT的图形化过程,避免了强酸长时间的腐蚀,大大提高了PZT薄膜的制备与MEMS工艺的兼容性. 相似文献
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Björn Lüssem Zoi Karipidou Akos Schreiber Akio Yasuda Jurina M. Wessels Gabriele Nelles 《Microelectronic Engineering》2010,87(4):614-619
A new printing technology is described, which is capable of printing metallic electrodes onto organic layers. Electrodes are defined on top of a sacrificial layer by optical or nano-imprint lithography. To increase the stability of the process the electrodes are coated with several backing layers. The metallic features are released from the sacrificial layer by immersion in water and subsequently transferred onto the target substrate. By the use of nano-imprint lithography, feature sizes below 100 nm are achieved. The strengths of the printing technology are high integration density, versatility and reproducibility. 相似文献
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有机发光显示被认为是下一代最理想的显示技术,具有自主发光、功耗小、视角宽、成本低和响应速度快等优点。本文在简述有机电致发光器件的电极结构和发光材料的基础上,重点介绍了有机显示器件的驱动技术和面板的研发成果,并展望未来发展的前景。 相似文献
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Kanechika M. Kodama M. Uesugi T. Tadano H. 《Electron Devices, IEEE Transactions on》2005,52(6):1205-1210
This paper presents a concept of silicon-on insulator lateral devices based on a reduced surface field (RESURF) principle by striped trench electrodes formed along the current flow direction. These trench electrodes reduce the electric field at the pn junctions sandwiched between the electrodes. We experimentally applied this RESURF technology to a conventional pn/sup -/ lateral diode. As a result, the breakdown voltage was increased from 56 to 104 V without varying the impurity concentration and the length of the n/sup -/ region. This means that the RESURF effect was achieved with the striped trench electrodes. The LDMOS with this RESURF technology was evaluated by simulations. This would be available for 80-V class lateral MOSFETs, used in the forthcoming 42-V automotive systems. 相似文献