介质/金属/介质多层透明导电薄膜研究进展

综述了介质/金属/介质(dielectric/metal/dielectric,D/M/D)多层透明导电膜材料的特点、制备方法、研究进展与应用现状,重点比较讨论了ITO/Ag/ITO、ZnS/Ag/ZnS的膜系结构、光电性能、化学稳定性、热稳定性等特点,以及与国内外的研究差距.ITO/Ag/ITO、ZnS/Ag/ZnS是目前光电性能最好,且无需引入过渡层的两种D/M/D膜系,但有关其热稳定性的评价和研究存在不同的观点.用资源丰富、价格便宜、无毒的掺铝氧化锌(ZAO)薄膜取代含有价格昂贵的贵金属铟的掺锡氧化铟(ITO)薄膜,ZAO/Ag/ZAO膜系结构的设计、薄膜制备、光电性能与IMI的对比研究是目前国内外D/M/D研究中的热点课题和D/M/D发展的主要方向.     

NiO/Ag/NiO透明导电膜光电特性研究

在室温条件下, 利用磁控溅射法在玻璃衬底上制备了NiO/Ag/NiO透明导电膜, 研究了不同NiO层和Ag层厚度对三层膜可见光透过率和电阻特性的影响。结果分析表明:制备的NiO/Ag/NiO为N型透明导电膜。在400~800 nm的可见光区域内, 随着NiO和Ag层厚度的增加, 薄膜的透光率先增大后减小。NiO层厚度为30 nm且Ag层厚度为11 nm时, 叠层膜具有较好的光学特性, 其最大透过率为84%, 薄膜电阻为3.8Ω/sq, 载流子浓度为7.476×10²¹cm^-3。对薄膜透过率进行了计算机模拟, 发现结果与实验中大致趋势相同, 但因为折射率选择和薄膜界面等因素的影响, 在可见光区域后半段实验值大于计算值。     

直流磁控溅射法低温制备GZO:Ti薄膜及其光电性能研究

用直流磁控溅射法在玻璃衬底上成功制备出了钛镓共掺杂氧化锌(GZO:Ti)透明导电薄膜,研究了溅射压强和功率对GZO:Ti薄膜的微观结构和光电性能的影响。研究结果表明,所制备的GZO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。溅射压强和功率对薄膜的电阻率和微观结构均有显著影响。随功率增大,薄膜电阻率降低,生长率增大。所制备的薄膜的最小电阻率为1.81×10-4Ω·cm,可见光区平均透过率大于84%。     

氢气与Cu中间层对GZO薄膜光电性能的影响

采用磁控溅射方法, 在H₂/Ar混合气氛下制备了GZO薄膜和在Ar气氛下制备了GZO/Cu/GZO多层结构薄膜, 分别研究了H2流量和Cu层厚度对薄膜透明导电性能的影响。在此基础上, 在H₂/Ar混合气氛下制备了GZO/Cu/GZO多层结构薄膜, 对Cu层厚度对其性能的影响进行了研究。结果表明, 沉积气氛中引入H₂能有效降低GZO薄膜的电阻率而提高其透光率, 在H₂流量为20 sccm时GZO薄膜具有最佳性能。随着Cu厚度的增加, GZO/Cu/GZO多层结构薄膜的电阻率和平均透过率显著下降。在H₂/Ar混合气氛下制备的氢化GZO/Cu/GZO多层结构薄膜的电阻率普遍低于Ar气氛下制备的GZO/Cu/GZO多层结构薄膜, 但其透光率却随Cu层厚度的增加而显著降低。另外, 薄膜的禁带宽度随H₂流量的增加而增加, 随Cu层厚度的增加而减小。     

透明导电薄膜材料的研究与发展趋势

本文简述了透明导电薄膜材料的发展现况和趋势,特别是对目前研究比较活跃的透明导电氧化物(TCO)及金属基复合多层透明导电膜的研究动态.材料设计原理及其应用进行了重点介绍,并就透明导电薄膜材料目前存在的问题及发展方向进行了分析讨论.     

插入NiCr合金层对SnO2/Ag/SnO2多层结构透明导电薄膜热稳定性的影响

室温下通过磁控溅射技术制备了SnO2/Ag/SnO2(SAS)、SnO2/Ag/NiCr/SnO2(SANS)和SnO2/NiCr/Ag/NiCr/SnO2(SNANS)三类多层膜.采用X射线衍射(XRD)、原子力显微镜(AFM)、霍尔效应测量仪和紫外-可见分光光度计研究了大气和真空退火温度与薄膜结构、形貌和透明导电性...     

30.4nmSi／C多层膜反射镜的制备与测量

采用离子束溅射镀膜装置制备了一种新的材料组合Ｓｉ／Ｃ多层膜，用于３０．４ｎｍ波段的正入射多层膜反射镜。并用软Ｘ射线反射率计测得其反射比最大值为０．１４。有效地抑制了１５．０ｎｍ处的二级衍射峰。     

W/SiC纳米多层膜的制备及表征

采用多靶磁控溅射制备了 Ｗ／ＳｉＣ纳米多层膜。并用 ＸＲＤ和 ＴＥＭ研究了 Ｗ／ＳｉＣ纳米多层膜的微结构。研究表明,Ｗ／ＳｉＣ纳米多层膜的调制结构界面平直、清晰、周期性好;ＳｉＣ调制层为非晶态,Ｗ调制层在大调制周期为纳米晶,并随调制周期减小逐渐转变为非晶态。     

磁控溅射Fe-N薄膜及Fe-N/TiN多层膜的结构和磁性

用磁控溅射法制备了Fe N薄膜和Fe N/TiN多层膜。结果表明 ,在常温下 ,使用较小的氮、氩比溅射 ,生成的Fe N薄膜主要是含氮α Fe固溶体 ,并且N原子进入α Fe晶格是饱和磁化强度提高的一个原因。Fe N/TiN多层膜的层间耦合作用以及减小每一Fe N层厚度而引起的晶粒尺寸的减小可以有效地降低薄膜的矫顽力 ,从而获得更好的软磁性能     

离子束溅射制备Co/Pt多层膜的结构和磁性

采用离子束溅射技术制备了Co／Pt多层膜，并研究了多层膜的结构和磁性随Co层厚度（tCo）或Pt层厚度（tPt）的变化关系。结果表明Co层呈现出hcp结构的（002）织构，Pt层表现出fcc结构的（111）织构。当Co层和Pt层都比较薄时，界面有Co-Pt的化合物形成。当tPt=2．4nm而tCo在0．6～2．4nm变化时，样品的磁矫顽力（Hc）随tCo增加而下降，饱和磁化强度（Ms）随tCo增加而增加。当tCo=1．2nm而tPt在1．2～4．8nm变化时，Hc呈现先升后降的变化，Ms随tPt增大而减小。样品的Hc还受调制周期（D）和周期数ny的影响，通过对Co层和Pt层的厚度比、调制周期、周期数的设计，可以获得较大的磁矫顽力。     

金属Ag微网格修饰ITO薄膜的制备及光电性能

利用聚苯乙烯(PS)微球模板技术和直流磁控溅射技术在ITO(In2O3∶Sn)薄膜表面进行Ag的微网格修饰,得到具有良好周期性的表面结构。研究了PS微球直径和直流磁控溅射Ag时间对ITO薄膜表面形貌、可见光区透过率、漫反射率和导电性能的影响。实验及分析证明,对ITO表面进行Ag微网格修饰,当微球直径为2μm,溅射时间为30s时,最大可提高薄膜的导电性能19.5%,其漫反射性能可提高200%,同时在可见光区透过率的降低控制在10%以下,这将有助于提高ITO薄膜作为太阳能电池透明电极的陷光性能。     

磁控溅射制备AZO/Ag/AZO透明导电膜的性能研究

选择ZnO2与Al2O3质量比为97：3的靶材为溅射源,用射频磁控溅射法室温下在玻璃基底上沉积AZO／Ag／AZO薄膜,讨论了氧流量变化对薄膜透光率、方阻及表面形貌的影响并深入分析了机理。研究结果表明,氧流量变化会导致薄膜沉积厚度的变化,氧流量为4时薄膜沉积速率最快。沉积AZO时充入氧气会使整个膜系的透光率不随Ag层增厚明显降低,并且会使膜系的方阻降低。在最优氧流量为4L／min（标准状态下,下同）上下各沉积59nm的AZO与氧流量为0时沉积33nm银层相匹配的复合膜在可见光区（包括基底）的透光率达到90％,方阻为2．5Ω/□。     

The effect of annealing on structural, electrical and optical properties of nanostructured ZnS/Ag/ZnS films

In this paper a ZnS/Ag/ZnS (ZAZ) nano-multilayer structure is designed theoretically and optimum thicknesses of ZnS and Ag layers are calculated at 35 and 17 nm, respectively. Several conductive transparent ZAZ nano-multilayer films are deposited on a glass substrate at room temperature by thermal evaporation method. Changes in the electrical, structural, and optical properties of samples are investigated with respect to annealing in air at different temperatures. High-quality nano-multilayer films with the sheet resistance of 8 Ω/sq and the optical transmittance of 83% at 200 °C annealing temperature are obtained. The figure of merit is applied on the ZAZ films and their performance as transparent conductive electrodes are determined.     

Influence of Ag thickness on electrical, optical and structural properties of nanocrystalline MoO3/Ag/ITO multilayer for optoelectronic applications

In this study, MoO₃/Ag/ITO/glass (MAI) nano-multilayer films were deposited by the thermal evaporation technique and then were annealed in air atmosphere at 200 °C for 1 h. The effects of Ag layer thickness on electrical, optical and structural properties of the MoO₃(45 nm)/Ag(5-20 nm)/ITO(45 nm)/glass nano-multilayer films were investigated. The sheet resistance decreased rapidly with increasing Ag thickness. Above a thickness of 10 nm, the sheet resistances became somewhat saturated to a value of 3(Ω/□). The highest transparency over the visible wavelength region of spectrum (85%) was obtained for 10 nm Ag layer thickness. Carrier mobility, carrier concentrations, transmittance and reflectance of the layers were measured. The allowed direct band-gap for an Ag thickness range 5-20 nm was estimated to be in the range 3.58-3.71 eV. The XRD pattern showed that the films were polycrystalline. X-ray diffraction has shown that Ag layer has a (111) predominant orientation when deposited. The figure of merit was calculated for MAI multilayer films. It has been found that the Ag layer thickness is a very important factor in controlling the electrical and optical properties of MAI multilayer films. The optimum thickness of the Ag layer for these films was determined. The results exhibit that the MAI transparent electrode is a good structure for use as the anode of optoelectronic devices.     

Effect of Cu layer thickness on the structural, optical and electrical properties of AZO/Cu/AZO tri-layer films

Highly conducting AZO/Cu/AZO tri-layer films were successfully deposited on glass substrates by RF magnetron sputtering of Al-doped ZnO (AZO) and ion-beam sputtering of Cu at room temperature. The microstructures of the AZO/Cu/AZO multilayer films were studied using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM). X-Ray diffraction measurements indicate that the AZO layers in the tri-layer films are polycrystalline with the ZnO hexagonal structure and have a preferred orientation with the c-axis perpendicular to the substrates. With the increase of Cu thickness, the crystallinity of AZO and Cu layers is simultaneously improved. When the Cu thickness increases from 3 to 13 nm, the resistivity decreases initially and then varies little, and the average transmittance shows a first increase and then decreases. The maximum figure of merit achieved is 1.94 × 10⁻² Ω⁻¹ for a Cu thickness of 8 nm with a resistivity of 7.92 × 10⁻⁵ Ω cm and an average transmittance of 84%.     

层数变化对ZnO/In2 O3多层膜微观结构及光电性能的影响

用直流磁控溅射和热氧化法在玻璃衬底上制备ZnO/In2O3透明导电多层膜,当总厚度一定时,调节溅射沉积的层数与相应各层膜的厚度,研究该多层膜微观结构、光学性能和电学性能的变化.XRD和SEM分析表明:随着溅射沉积层数的增加,In2O3衍射峰的强度不断地减弱,ZnO衍射峰出现了不同的晶面择优取向;多层膜表面的ZnO晶粒粒径变小,光洁度增加.四探针法方块电阻测试表明:低温热氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而上升;高温氧化时,ZnO/In2O3多层膜的方块电阻随层数的增加而下降.可见光光谱分析表明:随着溅射沉积层数的增加,ZnO/In2O3多薄膜在可见光区的平均透过率增大,透过率的峰值向短波方向偏移.     

BaTiO3/SrTiO3多层膜的制备及其介电性质

采用脉冲激光沉积法在Pt／Ti／SiO2／Si衬底上制备了BaTiO3／SrTiO3(BTO／STO)多层膜。XRD结果表明：多层膜呈现出明显的(110)择优取向,与Ba0.5Sr0．5TiO3单层膜相比,多层膜的相对介电常数得到了明显的增强,而介电损耗仍然保持在较低的水平。室温下频率为10kHz时,BTO／STO(n=6)多层膜的相对介电常数为506,而介电损耗仅为0．033。薄膜的C-V特性研究表明：多层膜呈现出较好的电容调谐度。     

Investigation of interface properties of Ti/Ni/Ag thin films on Si substrate

The interface structure and the adhesion of direct current (DC) sputtered Ti/Ni/Ag thin film metallization on n⁺Si substrate has been investigated. It is shown that beside the chemical preparation of the Si surface prior to sputtering also thermal annealing of sputtered metal structure has strong influence on the adhesion of sputtered layers to the silicon. Energy dispersive X-ray spectroscopy (EDS) analysis were performed on both, the delaminated layers and on the silicon surface to determine the exact delaminating interface, which was found to be between Si and Ti layer. Auger electron spectroscopy (AES) profile revealed no traces of contamination at Ti-Si interface. Measured high tensile residual stress, particularly in sputtered Ni layer (1.4-2 GPa) is found to reduce the metal stack adhesion.     

VOx/TiOx/Ti多层薄膜的制备工艺与内耗研究

用磁控反应溅射法在玻璃和镅片衬底上制备Vox/TiOx/Ti多层薄膜.用X射线衍射(XRD)、QJ31单臂电桥、薄膜内耗仪等测试了薄膜的晶体结构、电阻、内耗.分别进行了薄膜的制备工艺与内耗研究.测试分析结果表明:试样的晶体结构、电阻-温度曲线、杨氏模量的突变均表明多层薄膜在66℃左右发生相变.样品的电阻温度系数为-4.35%/℃.并且真空退火有利于二氧化钒相生成.