宽带混频器的优化设计

采用0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计并实现了一款单片宽带混频器.该混频器采用双平衡混频器结构,以串联的两个漏源相连的PHEMT作为环形二极管电桥中的二极管以提升混频器线性度.本振巴伦和射频巴伦均采用螺旋线式Marchand巴伦,为降低巴伦的幅度及相位不平衡度,采用遗传算法对巴伦的几何参数进行了优化设计.该混频器电路采用0.25 μm GaAs PHEMT工艺实现,芯片面积为1.5mm×1.1 mm.测试结果表明,当本振功率为20 dBm时,变频损耗小于7 dB,输入三阶交调点ⅡP3大于22 dBm.本振端口到射频端口和中频端口的隔离度均大于30 dB.     

GaAs MMIC宽带双平衡混频器的研制

采用GaAs肖特基二极管工艺,设计并制造了一款宽带无源双平衡混频器,射频、本振频率为1.5～3.7 GHz,变频损耗小于10 dB,本振到射频隔离度大于35 dB,中频带宽DC～0.8 GHz.该混频器采用了环形二极管和螺旋式巴伦结构,在获得良好的变频损耗与隔离度的同时,显著减小了芯片面积,整体芯片尺寸为1.2 mm × 1.2 mm.     

四次谐波镜像抑制混频器中无源部分的设计

本文介绍了四次谐波镜像抑制混频器中无源部分的设计,无源部分包括了双巴伦和兰格电桥。通过ADS 软件进行相关的仿真,最终实现了巴伦在频段7.9~9.5GHz 的幅度不平衡度小于0.2dB,相位不平衡度小于1°,在中心频率8.7GHz 的插损约为7.3 dB;兰格电桥在频段30~40GHz 的幅度不平衡度小于0.3 dB,相位不平衡度小于1°在中心频率35GHz 的插损约为3.25 dB。双巴伦和兰格电桥仿真得到的结果良好,为最终四次谐波镜像抑制混频器的单片实现奠定了基础。     

3 mm单平衡混频器芯片

为满足3 mm收发系统的小型化需求,采用InP高电子迁移率晶体管(HEMT)工艺,设计并制造了一款3 mm单平衡混频器芯片.该单平衡混频器芯片采用了反向并联肖特基二极管对(APDP)和三线耦合Marchand巴伦结构,在获得精确的肖特基二极管非线性模型和巴伦电磁场S参数模型的基础上,对混频器进行了电路设计.最终获得了良好的工作带宽、变频损耗与隔离度指标,在片测试结果显示,该芯片射频、本振频率为82～100 GHz,变频损耗小于9 dB,本振(LO)-射频(RF)隔离度大于20 dB,中频带宽为0.1～18 GHz,整体芯片尺寸为1.1 mm×1.0 mm.     

GaAs单片二极管双平衡混频器

采用0.25μm的GaAs工艺制作了一款单片二极管双平衡混频器。基于环形二极管双平衡混频器的基本工作原理,提出了LO巴伦与RF巴伦的区别所在,并以Marchand巴伦为LO巴伦,以triformer巴伦作为RF巴伦。在优化了局部电路后,再与环形二极管组成整体电路,并对整体电路进行了优化。最后对版图进行EM仿真,并稍作调整以改善EM仿真结果。当本振功率在13dBm时,实测得转换损耗在低本振和高本振下约为11.5dB和10.5dB,LO端口到IF端口和RF端口隔离度分别为30dB和35dB,LO端口和RF端口驻波分别小于2和3.5,实测结果与仿真结果基本一致。     

基于LTCC技术的C频段星载接收机混频器

利用低温共烧陶瓷(LowTemperature Co-fired Ceramic,简称LTCC)技术,设计制作了一种可应用于C频段星载接收机的双平衡混频器。该混频器将射频和本振巴伦等无源器件集成在多层LTCC基板内,实现了电路的小型化、高集成度和高可靠性。测试表明,当射频输入为5.925～6.425GHz、本振频率为2.225GHz、中频输出频率为3.7～4.2GHz时,混频器的变频损耗≤9.3dB,P1dB为5.7dBm,本振到射频和本振到中频的隔离度分别为39.44dB和35.58dB。混频器的尺寸为40×22×1.92mm3。     

1-18GHz微带巴伦双平衡混频器

本文介绍了一种微带巴伦多倍频程微波集成双平衡混频器。它是由宽带微带巴伦和二极管电桥组成。这种微带巴伦双平衡混频器显示了良好的噪声特性和隔离特性。在1-18GHz工作频率范围内,最大双边带噪声系数为8.7dB,平均双边带噪声系数约6dB;本振端一信号端、本振端一中频端隔离度均大于15dB。     

一种2. 8～6GHz 单片双平衡无源混频器

采用WIN 0.15μm GaAs pHEMT 工艺研制了2.8~6 GHz 的片上双平衡无源混频器。混频器在本振端和射频端均采用不同尺寸的螺旋型Marchand 巴伦结构,不仅大大缩小了芯片尺寸,并且在没有外加补偿电路的情况下,在2.8 ~6 GHz 频带范围内均取得良好匹配。测试结果表明,混频器的变频损耗小于8 dB,射频端口反射系数小于-10 dB,LO 到RF 的隔离度大于40 dB,输入1 dB 压缩点大于10 dBm,输入三阶交调阻断点大于17 dBm。仿真与实测结果对应良好,芯片总面积为1.4 mm×1.1 mm。     

一款GaAs PHEMT超宽带无源双平衡混频器MMIC

混频器是微波系统关键部件之一.微波通信系统的宽带化和小型化发展趋势对混频器性能提出更高要求.基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款超宽带无源双平衡混频器单片微波集成电路(MMIC).该混频器采用环形肖特基二极管结构和两个新颖的螺旋式平行耦合微带线巴伦结构,大大提高了混频器工作带宽,减小了芯片尺寸,提高了本振(LO)到射频(RF)端口的隔离度.在片探针测试结果显示该芯片在上、下变频模式下RF和LO工作频率均为2～ 22 GHz,中频工作频率为0～4 GHz,变频损耗≤11.5 dB,LO到RF端口隔离度≥37 dB,LO输入功率为15 dBm.芯片尺寸为1.7 mm×1.0 mm.     

一款集成驱动放大器的低变频损耗混频器设计

采用0.5μm GaAs工艺设计并制造了一款单片集成驱动放大器的低变频损耗混频器.电路主要包括混频部分、巴伦和驱动放大器3个模块.混频器的射频(RF)、本振(LO)频率为4～7 GHz,中频(IF)带宽为DC～2.5 GHz,芯片变频损耗小于7 dB,本振到射频隔离度大于35 dB,本振到中频隔离度大于27 dB.1 dB压缩点输入功率大于11 dBm,输入三阶交调点大于20 dBm.该混频器单片集成一款驱动放大器,解决了无源混频器要求大本振功率的问题,变频功能由串联二极管环实现,巴伦采用螺旋式结构,在实现超低变频损耗和良好隔离度的同时,保持了较小的芯片面积.整体芯片面积为1.1 mm×1.2 mm.     

半模基片集成波导平衡混频器的设计实现

利用半模基片集成波导3 dB电桥设计了一种X波段单平衡混频器,并用印刷电路板工艺实现。首先设计并测试了半模基片集成波导电桥的性能,并给出测试结果。然后将半模基片集成波导电桥用于单平衡混频器的设计,并给出混频器的具体电路形式。该混频器具有良好的性能,与原有的基片集成波导电桥混频器相比体积更小、重量更轻。经测量混频器变频损耗小于8.6 dB,并在9 GHz～12 GHz频带内获得了比较好的响应平坦度。     

Low-Loss and Broadband Asymmetric Broadside-Coupled Balun for Mixer Design in 0.18-$mu{hbox {m}}$ CMOS Technology

This study presents an asymmetric broadside coupled balun with low-loss broadband characteristics for mixer designs. The correlation between balun impedance and a 3D multilayer CMOS structure are discussed and analyzed. Two asymmetric multilayer meander coupled lines are adopted to implement the baluns. Three balanced mixers that comprise three miniature asymmetric broadside coupled Marchand baluns are implemented to demonstrate the applicability to MOS technology. Both a single and dual balun occupy an area of only 0.06 mm². The balun achieves a measured bandwidth of over 120%, an insertion loss of better than 4.1 dB (3 dB for an ideal balun) at the center frequency, an amplitude imbalance of less than 1 dB, and a phase imbalance of less than 5deg from 10 to 60 GHz. The first demonstrated circuit is a Ku-band mixer, which is implemented with a miniaturized balun to reduce the chip area by 80%. This 17-GHz mixer yields a conversion loss of better than 6.8 dB with a chip size of 0.24 mm². The second circuit is a 15-60-GHz broadband single-balanced mixer, which achieves a conversion loss of better than 15 dB and occupies a chip area of 0.24 mm². A three-conductor miniaturized dual balun is then developed for use in the third mixer. This star mixer incorporates two miniature dual baluns to achieve a conversion loss of better than 15 dB from 27 to 54 GHz, and occupies a chip area of 0.34 mm².     

Compact 28-GHz subharmonically pumped resistive mixer MMIC using a lumped-element high-pass/band-pass balun

This work reports a novel lump-element balun for use in a miniature monolithic subharmonically pumped resistive mixer (SPRM) microwave monolithic integrated circuit. The proposed balun is simply analogous to the traditional Marchand balun. The coupled transmission lines are replaced by lump elements, significantly reducing the size of the balun. This balun requires no complicated three-dimensional electromagnetic simulations, multilayers or suspended substrate techniques; therefore, the design parameters are easily calculated. A 2.4-GHz balun is demonstrated using printed circuit board technology. The measurements show that the outputs of balun with high-pass and band-pass responses, a 1-dB gain balance, and a 5/spl deg/ phase balance from 1.7 to 2.45 GHz. The balun was then applied in the design of a 28-GHz monolithic SPRM. The measured conversion loss of the mixer was less than 11dB at a radio frequency (RF) bandwidth of 27.5-28.5 GHz at a fixed 1 GHz IF, a local oscillator (LO)-RF isolation of over 35 dB, and a 1-dB compression point higher than 9 dBm. The chip area of the mixer is less than 2.0 mm/sup 2/.     

An Active IF Balun for a Doubly Balanced Resistive Mixer

In this letter, we present a wideband active intermediate frequency (IF) balun for a doubly balanced resistive mixer implemented using a 0.5 mum GaAs pHEMT process. The 0.3 times 0.5 mm² IF balun was realized through a DC-coupled differential amplifier in order to extend IF frequency of the mixer to DC. The measured amplitude and phase imbalances were less than 1 dB and 5deg, respectively, from DC to 7 GHz. The output third order intercept (OIP3) and P1 dB of the IF balun were 18 dBm and 6 dBm, respectively at 1 GHz. The mixer with the IF balun is 1.7 times 1.8 mm² in size, has a conversion loss of 2 to 8 dB from 8 to 20 GHz RF frequency at a fixed IF of 1 kHz, which proves the mixer operates successfully at an IF frequency close to DC. The measured OIP3 were +10 to +15 dBm over the operating frequency with a DC power consumption of 370 mW.     

无线收发前端小型化巴伦的研究

针对射频前端的小型化巴伦展开研究,在理论分析上,从变压器型巴伦的原理出发,将电磁场数值方法和微波网络理论相结合,将标准散射（S）参数和混合散射（S）参数相结合,提出了新颖的巴伦特性的理论研究方法;在实际应用上,利用高阻性硅基集成无源器件（Integrated Passive Device,IPD）技术,经过电磁仿真和优化,设计和制作了基于交叉耦合平面螺旋线结构的小型化变压器型巴伦.巴伦的尺寸仅为1.85 mm×1.6 mm,10 dB单端回波损耗带宽为2.07~2.80 GHz,频带内插入损耗小于0.98 dB,差分对幅度失配小于0.43 dB,相位失配小于3.8°,仿真结果得到了实验验证.     

Design and performance of a planar star mixer

This paper describes the realization of a hybrid star mixer as a planar circuit. The mixer has a minimum conversion loss of 5 dB and, for a conversion loss of less than 9 dB, spans over 2.2 GHz in IF bandwidth and 8 GHz in RF/LO bandwidth. The mixer employs a novel, planar balun structure, similar to conductor-backed CPW, that is suitable for realization as a monolithic circuit     

带有小型化Balun的C波段单片GaAs pHEMT单平衡电阻性混频器

 本文介绍了一种带有小型化无源Balun的C波段单片GaAs pHEMT单平衡电阻性混频器.Balun 采用集总—分布式结构,使其长度与常用λ/4耦合线Balun相比缩小了11倍,大大降低了将无源Balun应用于C波段单片集成电路中所需的芯片尺寸.混频器采用单平衡电阻性结构,在零功耗的情况下实现了良好的线性和口间隔离性能.测试结果显示,在固定中频160MHz,本振输入功率0dBm条件下,在3.5~5GHz RF频带内,最小变频损耗为8.3dB,1dB压缩点功率为8.0dBm,LO至IF之间的隔离度为38dB.