CVD自支撑金刚石薄膜中的宏观织构与微观孪晶

采用背散射电子取向成像、扫描电镜、X射线衍射等手段研究了CVD自支撑金刚石膜的宏观织构、微观组织及晶粒取向的演化过程．薄膜制备时的气氛纯度较低，这是引起本文金刚石膜中发现大量孪晶的一个重要原因．杂质原子会降低金刚石的层错能，从而降低孪晶界的形成障碍，促进孪晶生成．频繁的孪晶导致{100}织构转向{122}织构，并弱化薄膜织构，使性能趋向各向同性．{110}取向的晶粒孪晶后仍具有{110}取向，因而在多重孪晶出现时仍可保持一定的稳定性．     

Ni-Si共晶的位向关系及晶格错配度的高分辨透射电镜研究

采用HRTEM研究了Ni-Si共晶的位向关系及相界面的微观结构。研究表明共晶体之间的位向关系为(1 11)_(Ni)∥(111)_(Ni3Si)且[110]_(Ni)∥[211]_(Ni3Si)。它们之间形成这样的位向关系符合界面能量最低原则,使材料性能达到最优状态。两相在〈111〉向的错配度为5%,界面产生错配位错来吸纳相界面两侧的错配,两相界面为半共格界面。     

初始凝固组织对Cr17表面皱折的影响机制

研究了Cr17铁素体不锈钢的初始凝同组织对与皱折特性相关的晶粒簇演变的影响和对冷轧退火板铍折的影响机制.结果表明:1.柱状晶和等轴晶铸坯在轧制和退火过程中其晶粒簇演变是不同的;2.等轴晶铸坯的冷轧退火试样比柱状晶铸坯的冷轧退火试样具有更少的{001}<110>晶粒簇和更多的{111}<112>晶粒簇;3.两种铸坯冷轧退火试佯皱折特性的差异归因于两者的{001}<110>、{111}<112>晶粒簇数量和分布的不同,而与{001}<010>、{111}<110>、{112}<110>晶粒簇无关.     

热阴极DC-PCVD方法制备的金刚石厚膜的生长特性和内应力

采用热阴极DC PCVD(DirectCurrentPlasmaChemicalVaporDeposition)方法制备出大尺寸高质量的金刚石厚膜,研究了金刚石厚膜的生长特性和内应力状态。由热阴极DC PCVD方法制备的金刚石厚膜大多数为〈110〉取向,表面显露面主要是(100)面和(111)面,厚膜的表面被较多的孪晶所覆盖,部分(111)面退化为3个相互垂直的(110)面,孪晶使厚膜表面结晶特性复杂化,金刚石厚膜的晶粒沿生长方向呈现柱状生长。金刚石厚膜的生长速率随甲烷流量和工作气压的增加而增加,但随生长速率的提高金刚石膜的品质明显下降。金刚石厚膜的内应力以压应力为主,随着甲烷浓度的增加压应力增加,随着工作气压的增加压应力减小,到某个气压之后变为张应力。     

微碳DP钢在连续退火加热段的组织与织构演变

利用扫描电镜、X射线衍射和电子背散射衍射技术研究了微碳DP钢在连续退火加热段的组织与织构演变。结果表明:热轧组织为铁素体加退化态珠光体,冷轧过程中铁素体被拉长并出现一定量的形变带;再结晶初期(720℃到750℃),多边形铁素体体积分数约30%,形变带易诱发{001}~{112}110取向晶粒优先形核与长大;再结晶后期(750℃到780℃),铁素体完全再结晶,硬质相逐渐溶解,111//ND纤维晶粒逐渐吞噬110//RD晶粒而长大。{001}110取向密度在再结晶初期和相变阶段剧烈增加,而相变对111//ND织构影响较小。     

薄膜生长基底对FeS2晶体取向的影响

用Fe膜硫化法制备了FeS2薄膜,分析了基底对FeS2薄膜晶体结构和位向分布的影响.结果表明,改变基底晶体的类型能够在一定程度上控制FeS2薄膜的晶体位向分布.FeS2薄膜在Si(100)、Si(111)和Al基底上可获得(200)方向的择优取向,在TiO2基底上可同时获得(200)及(220)择优取向,非晶玻璃基底对位向分布影响不明显.不同的基底与Fe薄膜的界面错配度不同,可改变薄膜晶体位向的分布,导致晶格畸变程度和晶粒尺寸的变化.当基底为非晶结构或界面的错配度较大时,FeS2晶体的取向分布主要受表面能和晶粒优先生长方向的控制,薄膜具有较小的晶格畸变和较细的晶粒;当基底为晶态并且界面错配度较小时,FeS2晶体取向的分布除受表面能及晶粒优先生长方向控制外,还受界面应变能的控制,此时薄膜易形成较大的晶格畸变和粗晶粒.     

杂质原子在面心立方晶体中诱发的成对挛晶

为研究杂质原子在面心立方晶体内诱发的孪晶,采用刚性球模型进行计算研究。计算结果表明,当杂质元素的原子半径与晶体的原子半径之比约为1．65时,如果杂质原子吸附在面心立方晶体的{111}晶面上时,将可能在该{111}面上的某个[112]晶向上及与该{111}面的该[112]晶向成109．5。的另一个{111}面上的某个[112]方向上同时诱发挛晶,即诱发成对的挛晶,而不是仅仅在原来的{111}晶面上诱发一处孪晶．杂质原子诱发成对孪晶及单孪晶的的可能性各为50％．     

硼掺杂对金刚石薄膜生长特性的影响

采用HFCVD方法制备了掺硼金刚石薄膜,通过扫描电子显微镜和X射线衍射光谱对样品的表面形貌及结构进行了分析.结果表明,随着硼含量的增加,薄膜中晶粒的取向由(100)变为(111),然后趋向于无序化.硼的掺入同样影响到孪晶晶粒的形态及生长因子α,使得α变小.通过对样品的Raman光谱分析,得出在适当的硼掺杂浓度下,孪晶的出现使金刚石薄膜中的应力得到松弛,从而中心声子线Raman位移红移较小.     

SiCp／Al—Si复合材料中SiC／Si的晶体学位向关系

用TEM研究的离心铸和扩压铸造的SiCp/ZL109复合材料，发现Si优先在SiC表面上形核，长大，并形成大量“界面Si”及SiC/Si界面，SiC与Si之间不存在固定的晶体学位向关系，但存在（1101）sic//(111)si,[1120]sic//[112]Si优先出现的位向关系，而(001)sic//(111)Si不是优先出现的位向关系。     

CdZnTe晶体缺陷的透射电子显微分析

采用透射电子显微镜对CdZnTe晶体材料的缺陷特性进行了分析。在（111）面的透射电镜明场像中，观察到了棱柱位错环、位错墙、沉淀相、层错及倾斜的孪晶界面。应力是位错形成的主要原因，棱柱位错环的产生是由于沉淀相粒子在基体上产生错配应力；而位错网络与位错墙是两种热应力联合作用于晶体边缘的结果。晶体生长过程中，液固界面生长形态从平界面向胞状界面发展产生的沉淀相衬度不同于由于Te原子溶解度的回退产生的沉淀相衬度。CdZnTe晶体中的堆跺层错和孪晶与固液界面的稳定性相关。     

The growth and transformation of Pd2Si on (111), (110) and (100) Si

Thin Pd films on (111), (110), (100) and amorphous Si substrates form [001] fiber textured Pd₂Si in the temperature range 100°–700°C. The degree of texture is a function of substrate orientation, increasing in the order amorphous Si, (100) Si, (110) Si and (111) Si. Only on the (111) Si substrate is the Pd₂Si film epitaxially oriented. Temperature-dependent growth on this orientation can be characterized by [001] textured growth, epitaxial azimuth orientation at the Si interface and progressive layer by layer formation of the mosaic crystal to the thin film surface.During Pd deposition, rapid non-diffusion-controlled growth of epitaxial Pd₂Si on (111) Si occurs at substrate temperatures of 100° and 200°C. An unidentified palladium silicide of low crystallographic symmetry forms during Pd deposition onto a 50°C substrate. The diffusion-controlled growth of Pd₂Si on (111) Si follows a t^0.5 dependence. The velocity constant is

$\text{k = 7 × 10}{}^{\mathrm{?2}}\text{exp}\text{?}\text{29200±800}\text{RT}\text{cm}{}^2\text{/}\text{sec}$

Palladium deposited on 100°C (111) Ge substrates reacts during deposition to form epitaxially oriented Pd₂Ge. However, growth of this phase at higher temperatures results in a randomly oriented film. The transformation of Pd₂Ge to PdGe is kinetically controlled. After a 15 min anneal at 560°±10°C in N₂ only PdGe is detectable on (111) Ge.The high temperature stability of thin film Pd₂Si is controlled by time- temperature kinetics. For a given annealing cycle, the nucleation and growth rates of the PdSi phase are inversely related to the crystalline perfection of Pd₂Si. Decreasing transformation rates follow the order (100), (110), (111) Si. formation of thin film Pd₂Si occurs by the formation of PdSi and subsequent growth of Si within the PdSi phase. After a 30 min N₂ anneal, initial transformation occurs at 735°C on (100) Si, 760°C on (110) Si and 840°C on (111) Si. Extended high temperature annealing produces a two-phase structure of highly twinned and misoriented Si and small PdSi grains that penetrate as much as 3 μm into the Si.     

Mechanism of SiC crystals growth on {100} and {111} diamond surfaces upon microwave heating

The subject of this work is focused on characterization of the microstructures and orientations of SiC crystals synthesized in diamond–SiC–Si composites using reactive microwave sintering. The SiC crystals grown on the surfaces of diamonds have either shapes of cubes or hexagonal prisms, dependent on crystallographic orientation of diamond. The selection of a specified plane in diamond lattice for the TEM investigations enabled a direct comparison of SiC orientations against two types of diamond facets. On the {111} diamond faces a 200 nm layer of 30–80 nm flat β-SiC grains was found having a semi-coherent interface with diamond at an orientation: (111)[112]SiC║(111)[110]C. On the {100} diamond faces β-SiC forms a 300 nm intermediate layer of 20–80 nm grains and an outer 1.2 µm layer on top of it. Surprisingly, the SiC lattice of the outer layer is aligned with the diamond lattice: (111)[110]SiC║(111)[110]C.     

IF钢铁素体区热轧和退火过程中织构的演变

研究了一种Ti—IF（Interstitial—free）钢在铁素体区热轧和退火过程中织构的变化．由于轧制过程摩擦的影响,热轧织构和退火织构在厚度方向上都有很大的差异．在钢板的表层,热轧织构的主要组分是{110}（001）,退火后表层的铁素体晶粒没有发生再结晶,该组分转变为（001）（110）;在试样的中心和1／4面,热轧织构组分主要是较弱的（111）／／ND（板法向）织构和部分（110）／／RD且在{001}（110）处最强;退火后中心面上的晶粒发生了完全再结晶,{001}组分转变为（111）／／ND组分使（111）／／ND织构成为唯一织构组分且在{111}（112）处最强．     

Transmission electron microscope analysis of epitaxial growth processes in the sputtered β-FeSi2/Si(001) films

The crystallographic orientation relationships and the formation process of β-FeSi₂/Si(001) films were investigated by transmission electron microscopy. A film produced by sputtering pure iron onto a silicon substrate at 600 °C consists of α- and β-FeSi₂ particles. The crystallographic relationships obtained are: (112)_α‖(111)_Si and (101)_β‖(111)_Si or (110)_β‖(111)_Si. The grains of α- and β-FeSi₂ grown inside the substrate adopt the epitaxy to Si(111), irrespective of the surface orientation of the substrate. At 500 °C, on the contrary, there are few α-FeSi₂ grains and some grains of β-FeSi₂ with (100)_β‖(001)_Si [010]_β‖[110]_Si. These results demonstrate that the lower temperature and the higher Fe concentration suppress the formation of α-FeSi₂ and promote the formation of β-FeSi₂ on/below the substrate surface.     

Investigation of the 12 orientations variants of nanoscale Al precipitates in eutectic Si of Al-7Si-0.6Mg alloy

Various orientations and diffraction patterns from nanoscale Al precipitates in eutectic Si were investigated by high-resolution transmission electron microscopy combined with transition matrix and stereographic projection.It was found that the Al precipitates had 12 variants,all orientation relationships can be expressed as:(001)Al//{111}Si,[110]Al//<110>Si.Further,a new diffraction pattern model from Al precipitates was established under[111]Si zone axis,which was in good agreement with the experiment data.The microstructure,adhesion strength and electronic structure of the interface between Al precipitate and Si matrix were studied by first-principles calculation and experimental observation.The results show that the covalent bonds are formed between interfacial Al and Si atoms,which play a key role in interfacial bind strength.Based on the Griffith fracture theory,the cracks tend to form and expand in the interior of Al precipitates firstly,and the interfaces can act as a protective layer to prevent crack propagation.Therefore,the nanoscale Al precipitates will improve the toughness of eutectic Si particles by releasing part of stress through lattice distortion.In addition,the stretched nanoscale Al precipitates can act as effective heterogeneous nucleation sites for high density deformation nanotwins in eutectic Si during deformation,which significantly improved the deformability of eutectic Si.     

Solid-phase crystallization of β-FeSi2 thin film in Fe/Si structure

Dependence of solid-phase growth of β-FeSi₂ thin films on the crystal orientation of Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si(100), (110) and (111) stacked structures. X-ray diffraction (XRD) measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi₂ was as follows: (100)>(111)>(110). This dependence can be explained on the basis of the lattice mismatch between β-FeSi₂ and Si substrates, i.e., the lattice mismatch between β-FeSi₂(100) and Si(100), β-FeSi₂(110) or (101) and Si(111), and β-FeSi₂(010) or (001) and Si(110) of 1.4-2.0%, 5.3-5.5% and 9.2%, respectively. The substrate orientation dependence of solid-phase growth becomes relatively remarkable for very thin films.     

铜铟硒薄膜的外延生长和表面重构及其电池性能研究

在GaAs的(110)、(001)和(111)A、(111)B等极性晶面上, 通过铜铟共溅-硒蒸镀的方法, 分布外延生长出(220/204)、(001)和(112)结晶取向的单晶CIS薄膜. 系统考察了CIS薄膜外延生长的结晶取向和表面微结构, 发现了这些CIS外延薄膜均需表面重构化而形成比表面能低的CIS(112)晶面, 结合晶体结构研究了各种晶面和比表面能的相关性. 通过各种衬底下不同结晶取向的CIS薄膜的太阳能电池组装, 发现当CIS薄膜生长具有(220/204)结晶取向时电池器件性能最好、效率最高, 说明可通过控制CIS薄膜的沉积条件和选用合适取向的衬底, 增加吸收层(220/204)的结晶取向, 从而显著提高CIS薄膜太阳电池的光电性能.     

Effects of impurities on double twinning nucleation and grain refinement of Sn-based solder joints

As-solidified Sn3.0Ag0.5Cu?+?3.0POSS (polyhedral oligomeric silsesquioxanes), Sn3.0Ag0.5Cu?+?0.05CNTs (carbon nanotubes) and Sn3.0Ag3.0Bi3.0In (SABI333) solder joint orientations were quantitatively characterized by electron backscatter diffraction observations. Unlike the typical Sn-based solder joints in which single grains, tricrystals or double tricrystals are normally observed, for the studied joints, the frequency of the single-grained joints was greatly reduced, and the Sn3.0Ag0.5Cu?+?3.0POSS and SABI333 solder joints typically consisted of polycrystals. If the Sn dendrites deviated by more than 15° from the preferred [110] and \([1{\bar{1}}0]\) directions, then these polycrystals solidified from the Sn–Ag-based melt. Moreover, Bi and In atoms in the Sn–Ag-based alloys could significantly change the preferred [110] and \([1{\bar{1}}0]\) directions. In addition, two types of double twinning of tin were observed during reflow in the Pb-free solder joints. Different morphologies were observed between these twinned microstructures. However, the misorientations of the two groups of double twinned orientations ranged from 80° to 90°. In one of the double twinned systems, four Sn grain orientations had the same twin grain with a common [100] or [010] direction; in the other double twinned system, two groups of tricrystals were observed perpendicular to each other.     

Heteroepitaxy of Ir films on silicon with a ceria/yttria stabilized zirconia buffer layer

Heteroepitaxial Ir films on Si(001) with a double ceria/yttria stabilized zirconia heteroepitaxial buffer layer were grown by magnetron sputtering. As-deposited CeO₂ films covered with {111} faceted pyramids resulted in iridium films with the [001] axis normal to the substrate plane. The buffered substrates annealed at 1115 °C have a smooth surface; Ir films on such substrates have the (111) orientation and consist of grains turned at 90° toward each other.     

High-resolution elemental maps for three directions of Mg2Si phase in Al-Mg-Si alloy

Elemental maps of the Mg and Si sub-lattices of the Mg₂Si phase in an Al-1.0mass% Mg₂Si alloy were produced using an energy-filtering transmission electron microscope (EFTEM). Low magnification elemental maps were obtained using both low and high energy loss edges, and the intensities of the high energy loss edges were sufficiently high to allow the Mg₂Si phase to be observed at high magnification. High-resolution core-loss images of Mg and Si-K edges were taken parallel to [001], [111] and [110] of the Mg₂Si phase. In the [110] direction, Mg and Si atoms were successfully identified as sub-lattices. The Mg atoms formed a 0.39 nm diamond network, whereas the Si atoms formed a 0.32 nm by 0.22 nm rectangular network. This result is in good agreement with the projected potential of the Mg₂Si phase in the [110] direction. This is the first report of magnesium and silicon atoms in the Mg₂Si phase being successfully identified at the atomic level by EFTEM.