Castaing Instabilities in Longitudinal Spin-Diffusion Experiments

We analyze the anomalous long-lived NMR signals which have been observed in longitudinal spin-diffusion experiments with Fermi fluids. These signals have been attributed to the Castaing instability of the spin current in the Leggett equation. By considering an idealized experimental geometry in which diffusion occurs between two reservoirs of up and down spins connected via a thin tube, we are able to carry out a full stability analysis of the longitudinal spin current. We show that, in the absence of a field gradient, the instability of the spin current sets in when the spin-rotation parameter exceeds the critical value μM=π/2. In the unstable regime, we obtain spontaneous domain-wall structures as solutions to the steady-state Leggett equation, and discuss their formation from small perturbations. We find that the domain wall reduces the spin current through the tube, leading to an extraordinary increase of the lifetime of the magnetization in the reservoirs. We also show that a magnetic field gradient confines the instability, and that a large enough gradient stabilizes the longitudinal spin current.     

Field dependence of switching currents in an exchange biased spin valve

Current induced magnetic reversal due to spin transfer torque is a promising candidate in advanced information storage technology. It has been intensively studied. This work reports the field-dependence of switching-currents for current induced magnetization switching in a uncoupled nano-sized cobalt-based spin valve of exchange biased type. The dependency is investigated in hysteretic regime at room temperature, in comparison with that of a trilayer simple spin valve. In the simple spin valve, the switching currents behave to the positive and the negative applied magnetic field symmetrically. In the exchange biased type, in contrast, the switching currents respond to the negative field in a quite unusual and different manner than to the positive field. A negative magnetic field then can shift the switching-currents into either negative or positive current range, dependently on whether a parallel or an antiparallel state of the spin valve was produced by that field. This different character of switching currents in the negative field range can be explained by the effect of the exchange bias pinning field on the spin-polarizer (the fixed Co layer) of the exchange biased spin valve. That unidirectional pinning filed could suppress the thermal magnetization fluctuation in the spin-polarizer, leading to a higher spin polarization of the current, and hence a lower switching current density than in the simple spin valve.     

Investigations on the Magnetization Switching Dynamics in Spin Valve Multilayers Under Periodic Applied Magnetic Field

Magnetization switching dynamics in a spin valve nanopillar, induced by spin transfer torque in the presence of a periodic applied field is investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski equation. Under steady state conditions, the switching of magnetization occurs in the system, above a threshold current density value J _c. A general expression for the critical current density is derived and it is shown that this further reduces when there is magnetic interface anisotropy present in the free layer of the spin valve. We also investigated the chaotic behavior of the free layer magnetization vector in a periodically varying applied magnetic field, in the presence of a constant DC magnetic field and spin current. Further, it is found that in the presence of a nonzero interfacial anisotropy, chaotic behavior is observed even at much smaller values of the spin current and DC applied field.     

The spin diffusion in normal and superfluid Fermi liquids

Spin diffusion in paramagnetic spin systems is a dissipative process which acts so as to remove all spatial variation of the magnetization. In normal and superfluid Fermi liquids its physical origin lies in the nonconservation property of the macroscopic magnetization current associated with the thermal excitations, the Landau and Bogoliubov quasiparticles, respectively. In the hydrodynamic limit this dissipative process manifests itself in a constitutive relation connecting the decaying magnetization current with gradients in the magnetization density via a coefficient of spin diffusion. Exchange contributions to the quasiparticle interaction introduce, in addition, reactive processes, which can be associated with a rotation of the quasiparticle spin current about the direction of the spin polarization. This so-called spin current rotation—or Leggett-Rice effect—leads to nonhydrodynamic behavior of the spin diffusion whenever the exchange frequency becomes comparable to the inverse spin current relaxation time. In this article I would like to review our current understanding of diffusional spin transport, as influenced by nonhydrodynamic effects, in normal and superfluid Fermi systems.Dedicated to Ludwig Tewordt on the occasion of his 65th birthday.     

Manipulating spin current in the magnetic nanopillar

Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation. On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of approximately 100 nm are fabricated and the current-induced magnetization switching behaviors are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.     

Spin-torque oscillator using a perpendicular polarizer and a planar free layer

Spintronics materials have recently been considered for radio-frequency devices such as oscillators by exploiting the transfer of spin angular momentum between a spin-polarized electrical current and the magnetic nanostructure it passes through. While previous spin-transfer oscillators (STOs) were based on in-plane magnetized structures, here we present the realization of an STO that contains a perpendicular spin current polarizer combined with an in-plane magnetized free layer. This device is characterized by high-frequency oscillations of the free-layer magnetization, consistent with out-of-plane steady-state precessions induced at the threshold current by a spin-transfer torque from perpendicularly polarized electrons. The results are summarized in static and dynamic current-field state diagrams and will be of importance for the design of STOs with enhanced output signals.     

Micromagnetic simulation on dynamics of spin transfer torque magnetization reversal

I study the magnetization dynamics induced by spin transfer torque in CoFe/Ru/CoFe/Cu/NiFe nano-pillars using LLG micromagnetic simulations. The required current for spin transfer torque magnetization reversal was investigated with the switching speed and the temperature. The required current in rectangular nanopillars is much larger than that in elliptical nanopillers. The temperature dependence is pretty complicated. The antiparallel to parallel magnetization reversal at 77 K requires a smaller current than at 300 K. The parallel to antiparallel magnetization reversal at 77 K requires a smaller current than at 300 K only when the pulse duration time is very short.     

Current-Induced Spin–Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.     

Possible Spin Pumping Effects on Spin Torque Induced Magnetization Switching in Magnetic Tunneling Junctions

Dependence of spin torque induced magnetization switching upon interfacial insulating layers properties of magnetic tunneling junctions (MTJ) are studied. For the same magnetic properties and patterning geometric dimensions, changes in MTJ interfacial insulating layers properties reveal interesting magnetization switching behaviors. These behaviors cannot be explained by conventional Landau-Lifshitz-Gilbert equation with a spin torque term and an intrinsic ferromagnetic relaxation damping. However the magnetization switching dynamics can be understood through assumption of spin pumping effects in magnetic tunneling junctions. This is not only important for fundamental understanding of spin and electronic transport in MTJ but also important for practical trade-offs between critical switching current and MTJ resistance for spin torque random access memory.     

An anomalous magnetoelastic effect in nickel

A new magnetoelastic effect in nickel has been found that led us to modify some current theories about magnetization processes in weak fields. A longitudinal compression in Ni decreases its magnetization instead of increasing it. This behavior can be explained by a weak field spin rotation model, as opposed to the usual domain-wall motion theory. The important role played by residual stresses has also been taken into account, and a method for evaluating them is suggested.     

Direct Optical Detection of a Pure Spin Current in Semiconductor

We predict that a pure spin current in a semiconductor may induce Faraday birefringence even without magnetization. The theory is based on a derived effective interaction between the spin current and a polarized light beam, where the helicity of a photon is mapped to spin 1/2. The effective coupling between the polarized light beam and electron spin current can be realized in direct-gap semiconductors such as GaAs with inherent spin–orbit coupling in valence bands, but it involves neither the Rashba nor the Dresselhaus effect of samples. We estimate the amplitude of the Faraday rotation due to a pure spin current, and we present its incident-beam-angle dependence. We show that this Faraday birefringence can be directly measured.     

Magnetization Curve of Second Layer Anti-Ferromagnetic Solid 3He on Graphite

Two dimensional anti-ferromagnetic solid ³He on graphite in the so called 4/7 phase is a highly frustrated quantum spin system and its ground state is considered to be a gapless spin liquid. To investigate the detailed magnetic behavior, the magnetization curve has been measured below 1 mK in high magnetic fields, by use of NMR over a wide frequency range up to 84 MHz. The magnetization of the 4/7 phase seems to have a plateau at half the saturation magnetization, which is not inconsistent with results obtained with a double gradient Faraday magnetometer.      

On the Sarma-Type Phase Transitions in Ferromagnet/Superconductor/Ferromagnet Tunneling Junctions with Highly Spin-Polarized Ferromagnets

In the ferromagnet/superconductor/ferromagnet double tunneling junctions, the spin-polarized tunneling current in the antiparallel alignment of the magnetization induces spin imbalance in the superconductor, which has a pair breaking effect depressing superconductivity in the same way that the Zeeman effect does in the paramagnetic limit. In particular, it is shown that when the ferromagnets are highly spin polarized, the strong spin imbalance may lead to a first-order phase transition from the superconducting phase to the normal phase at low temperature and low bias voltage. This phase transition accompanies a large discontinuous drop in superconducting gap parameter bring in distinctive features in low energy transport.     

Spin gain transistor in ferromagnetic semiconductors-the semiconductor Bloch-equations approach

A scheme and principle of operation of a "spin gain transistor" are proposed. A large unmagnetized current creates the carrier density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization. Large magnetized current is then extracted. Thus, spin gain of >1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via semiconductor Bloch equations.     

Deterministic Magnetization Switching Using Lateral Spin–Orbit Torque

Current-induced magnetization switching by spin–orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin–orbit torques has relied on an external injection of out-of-plane spin currents into the magnetic layer, while an external magnetic field along the electric current direction is generally required for realizing deterministic switching by SOT. Here, deterministic current-induced SOT full magnetization switching by lateral spin–orbit torque in zero external magnetic field is reported. The Pt/Co/Pt magnetic structure is locally annealed by a laser track along the in-plane current direction, resulting in a lateral Pt gradient within the ferromagnetic layer, as confirmed by microstructure and chemical composition analysis. In zero magnetic field, the direction of the deterministic current-induced magnetization switching depends on the location of the laser track, but shows no dependence on the net polarization of external out-of-plane spin currents. From the behavior under external magnetic fields, two independent mechanisms giving rise to SOT are identified, i.e., the lateral Pt–Co asymmetry as well as out-of-plane injected spin currents, where the polarization and the magnitude of the SOT in the former case depends on the relative location and the laser power of the annealing track.     

Observation of the intrinsic pinning of a magnetic domain wall in a ferromagnetic nanowire

The spin transfer torque is essential for electrical magnetization switching. When a magnetic domain wall is driven by an electric current through an adiabatic spin torque, the theory predicts a threshold current even for a perfect wire without any extrinsic pinning. The experimental confirmation of this 'intrinsic pinning', however, has long been missing. Here, we give evidence that this intrinsic pinning determines the threshold, and thus that the adiabatic spin torque dominates the domain wall motion in a perpendicularly magnetized Co/Ni nanowire. The intrinsic nature manifests itself both in the field-independent threshold current and in the presence of its minimum on tuning the wire width. The demonstrated domain wall motion purely due to the adiabatic spin torque will serve to achieve robust operation and low energy consumption in spintronic devices.     

Magnetic vortex state stability, reversal and dynamics in restricted geometries

Magnetic vortices are typically the ground states in geometrically confined ferromagnets with small magnetocrystalline anisotropy. In this article I review static and dynamic properties of the magnetic vortex state in small particles with nanoscale thickness and sub-micron and micron lateral sizes (magnetic dots). Magnetic dots made of soft magnetic material shaped as flat circular and elliptic cylinders are considered. Such mesoscopic dots undergo magnetization reversal through successive nucleation, displacement and annihilation of magnetic vortices. The reversal process depends on the stability of different possible zero-field magnetization configurations with respect to the dot geometrical parameters and application of an external magnetic field. The interdot magnetostatic interaction plays an important role in magnetization reversal for dot arrays with a small dot-to-dot distance, leading to decreases in the vortex nucleation and annihilation fields. Magnetic vortices reveal rich, non-trivial dynamical properties due to existance of the vortex core bearing topological charges. The vortex ground state magnetization distribution leads to a considerable modification of the nature of spin excitations in comparison to those in the uniformly magnetized state. A magnetic vortex confined in a magnetically soft ferromagnet with micron-sized lateral dimensions possesses a characteristic dynamic excitation known as a translational mode that corresponds to spiral-like precession of the vortex core around its equilibrium position. The translation motions of coupled vortices are considered. There are, above the vortex translation mode eigenfrequencies, several dynamic magnetization eigenmodes localized outside the vortex core whose frequencies are determined principally by dynamic demagnetizing fields appearing due to restricted dot geometry. The vortex excitation modes are classified as translation modes and radially or azimuthally symmetric spin waves over the vortex ground state. Studying the spin eigenmodes in such systems provides valuable information to relate the particle dynamical response to geometrical parameters. Unresolved problems are identified to attract attention of researchers working in the area of nanomagnetism.     

Nuclear Spin Relaxation in Glass States of 3He-A in?Stretched Aerogel

We present results of pulse NMR investigations of superfluid A-like phase of ³He in stretched aerogel. In this case we have anisotropic orbital glass (OG) with two possible types of ordering in spin space??ordered spin nematic (OG-SN) or disordered spin glass (OG-SG) states. It was found that longitudinal relaxation of magnetization is non-exponential in both states and depends on temperature and on inhomogeneity of external steady magnetic field. At the same conditions the relaxation in OG-SG state is more rapid than in OG-SN state. For transverse orientation of the magnetic field relative to anisotropy axis the duration of free induction decay signal was longer than in normal phase. It may be explained by formation of coherently precessing spin state.     

Influence of the magnetostatic coupling in magnetization switching driven by spin-polarized current

The influence of the magnetostatic coupling (MC) on magnetization reversal processes driven by spin-polarized current has been studied by means of a micromagnetic model. The spin transfer torque is included as an additional term in the Gilbert equation, following previous theoretical calculations by Slonczewski. The MC plays a crucial role and it speeds the magnetization switching process.     

Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer

The current-induced magnetization switching (spin transfer effect) in a low resistance-area (RA) product magnetic tunnel junction (MTJ) device with critical current density of 1.4/spl times/10/sup 7/ A/cm/sup 2/ was demonstrated. The RA product of the MTJ is 4.2 /spl Omega//spl mu/m/sup 2/ and the magnetoresistance (MR) ratio induced by current is up to 16%. An MTJ structure with a novel nano-current-channel (NCC) layer inserted into the free layer for the current-induced magnetization switching by lower current density was proposed and prototyped. By using the current confined effect, the local current density in the integrated free layer was sufficiently high to switch the magnetization locally. Such local magnetization reversal helped to reverse the magnetic moments around together with the polarized current and spread out the switching of the entire free layer through the superparamagnetic nano-channels. The critical current density was reduced to 4.2/spl times/10/sup 6/ A/cm/sup 2/, which is only one quarter of that for a pure MTJ structure.