基于IBIS模型的信号完整性仿真分析

介绍了基于IBIS模型的信号完整性仿真分析的概念及其流程,并通过IBIS仿真分析了某型导弹安全控制器电路扳信号完整性,该电路板由数据前端处理和数据输出、数据处理器件、数据转换和缓存组成,适用于大型电路仿真。特别是对高速振铃和串扰进行情确的仿真,说明IBIS模型在电路板仿真分析中具有重要意义。     

高速PCB 信号完整性仿真与分析

针对如何能缩短电路设计开发流程和提高设计人员工作效率,本文主要提出了如何有效解决信号完整性问题。 介绍了一种信号完整性分析的方法,使用IBIS 模型进行信号完整性分析,通过加载芯片的IBIS 模型对高速PCB 板进行 仿真,并对仿真结果进行优化分析,达到验证设计的目的。     

IBIS建模和PCB信号完整性分析

随着数字系统中时钟频率的提高,PCB上的信号完整性也日益成为设计过程中不可忽略的问题.文中通过阐述IBIS模型的建立和PCB板上信号完整性的分析,介绍了一种必要的基于IBIS模型建立的信号完整性仿真及分析方法,例举了时钟网络设计的反射仿真结果对比.     

IBIS仿真模型的应用

IBIS模型在高速PCB仿真设计中有广泛的应用。然而大多因缺乏对IBIS模型的深入认识而大大降低仿真的效率和正确性。本文通过深入分析IBIS模型的数据表和对应的波形曲线,得出IBIS模型在高速PCB仿真设计中的一些新的重要结论。这些新的结论揭示了基于IBIS模型的信号完整性仿真的本质,并在实际的工程实践中得到了验证和广泛的应用。     

IBIS仿真模型的应用

IBIS模型在高速PCB仿真设计中有广泛的应用。然而大多因缺乏对IBIS模型的深入认识而大大降低仿真的效率和正确性。本文通过深入分析IBIS模型的数据表和对应的波形曲线,得出IBIS模型在高速PCB仿真设计中的一些新的重要结论。这些新的结论揭示了基于IBIS模型的信号完整性仿真的本质,并在实际的工程实践中得到了验证和广泛的应用。     

高速数据采集系统的信号完整性分析

信号完整性已经成为了高速数字PCB设计所关心的主要问题.文中简述了基于IBIS模型的信号完整性仿真分析的基本概念及其流程,并分析了基于IBIS模型的高速数据采集系统的信号完整性问题,利用仿真结果对设计进行修改.说明高速电路设计中采用基于信号完整性仿真设计是必要的,也是可行的.     

应用于微机高速线路设计的IBIS模型研究

在微机高速系统设计中，系咎前端总线时钟为100MHz，DDR接口时钟为133MHz。介绍了IBIS模型及其模型的应用研究，列出了IBIS模型在微机系统高速设计中的一些应用，详尽地给出了时钟信号仿真的波形，从仿真结果证明了在微机高速线路设计中引入IBIS模型的重要性和必要性。     

基于CADENCE的IBIS模型分析PCB信号完整性

总结了在高速PCB板设计中信号完整性产生的原因、抑制和改善的方法.介绍了使用IBIS模型的仿真步骤以及使用CADENCE公司的Allegro SPB软件,支持IBIS模型对反射和串扰的仿真,验证了其改善后的效果,可以直观地看到PCB设计是否满足设计要求,进而指导和验证高速PCB的设计.     

基于HyperLynx的FPGA系统信号完整性仿真分析

针对目前高速电路发展带来的信号完整性问题,在分析信号完整性要求的基础上,借助HyperLynx仿真软件,通过器件IBIS模型,对基于EP2C8和TMS320F2812组成的系统进行信号完整性分析和仿真。基于反射原理来介绍减少反射的端接方法,利用大量的板前和板后仿真对设计方案进行反复验证。研究结果表明,HyperLynx可以解决该系统信号完整性方面存在的诸多问题,仿真结果给实际工程提供了借鉴。     

基于宏模型的同步开关噪声仿真分析

同步开关噪声(SSN)对具有上百个输入/输出端口的高性能FPGA系统具有很大的影响,已经成为深亚微米设计所必须考虑的主要问题之一.由于没有考虑电压反馈效应,IBIS模型在仿真SSN时,总是过高估计电源噪声、地噪声和静线噪声.为提高IBIS模型仿真SSN的精度提出了一种改进的方法,利用自研发的工具SSWI(SSN simulation with IBIS)获得了自动IBIS优化模型.利用美国北卡州立大学开发的工具S2IBIS直接从SPICE模型中提取了IBIS模型,与SPICE模型仿真结果验证了该方法的有效性,采用该法可以提高IBIS模型仿真SSN的精度60%～70%.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.