精确的短沟MOSFET电路模型及参数提取

给出一套具有较高精度且同时适用于数字电路和模拟电路ＣＡＤ的短沟ＭＯＳ器件直流模型。该模型精确、高效，可移植到ＨＳＰＩＣＥ等通用线路分析软件中。结合解析和数值两种参数提取方法，文中采用局部优化参数提取法进行ＭＯＳ器件参数提取。优化算法采用单纯形直接搜索法。参数提取过程中考虑了输出电导的精确性。通过对１．２μｍＣＭＯＳ工艺ＮＭＯＳ器件的测试及参数提取，并进行模型计算，结果表明理论和实际值符合很好。     

基于遗传算法的BSIM SOI模型参数提取

提出了一种提取BSIM SOI模型参数的新方法,该方法基于遗传算法和局部优化法的结合,同时具有全局优化和局部优化的优点,提取的参数物理意义明确,并且容易得到全局最优解.该方法计算简单,不需要对模型进行深入了解和丰富的参数提取经验,易于推广使用.对用该方法得到的SOI模型进行了模拟,并将模拟结果与1.2μm CMOS/SOI测试结果进行对比,二者吻合很好,SOI器件特有的kink效应也得到了很好的拟合.     

基于遗传算法的BSIM SOI模型参数提取

提出了一种提取BSIM SOI模型参数的新方法,该方法基于遗传算法和局部优化法的结合,同时具有全局优化和局部优化的优点,提取的参数物理意义明确,并且容易得到全局最优解．该方法计算简单,不需要对模型进行深入了解和丰富的参数提取经验,易于推广使用．对用该方法得到的SOI模型进行了模拟,并将模拟结果与1.2μm CMOS/SOI测试结果进行对比,二者吻合很好,SOI器件特有的kink效应也得到了很好的拟合．     

一种基于晶体管逻辑状态的电路简化方法

本文提出了一种存储器（Memory）逻辑参数提取的电路简化新方法.该方法通过判断在输入特定激励向量时晶体管的逻辑状态是否改变来简化电路,研究表明新方法能大幅度减少电路中晶体管的数量,同时能很好地保持电路原有的功能特性和电气特性.基于此方法测得的逻辑参数有较好的精度,并大大加快了提取速度.实验结果表明该方法是有效的.     

集成电路和系统设计中的逻辑模型

半导体器件模型建立了晶体管的电气参数与物理参数之间的关系，构成了集成电路(IC)设计的基础。IC的电气性能可以从器件模型参数导出。当电路规模不大，即晶体管不太多时(几百支以下)，例如模拟电路，直接使用器件模型对设计的电路进行仿真验证是可行的。     

MOS器件中寄生双极型晶体管模型参数的提取

在晶体管GP模型基础上,采用Silvoca公司的UTMOST模型参数提取程序,得到一种双极型晶体管模型参数的提取方法.用此方法对PCM测试芯片的寄生三极管进行参数提取和模拟,模拟结果与测试结果符合得较好.     

基于遗传算法的场效应管模型参数的提取

建立一个精确的微波场效应管的等效电路模型对于微波场效应管电路的非线性分析,模拟和优化设计是十分重要的.本文提出了一种新的提取场效应管的等效电路模型参数的方法--混合遗传算法.混合遗传算法将遗传算法和模拟退火法有机地结合,发挥了两者的优点.文中给出了应用混合遗传算法提取场效应管NE32584的等效电路模型参数的实例,得到了具有很高精度的模型参数.     

基于X 参数晶体管模型的宽带功率放大器设计*

针对射频非线性行为建模技术,提出了一种与负载无关的晶体管X参数提取方法,并利用晶体管模型进行功率放大器设计。该方法在传统X参数提取过程中引入负载牵引技术,通过迭代获得与负载无关的晶体管X参数模型及其最佳负载阻值。与负载相关的X参数模型相比,该模型适用于分析设计电路,数据量小,步骤简单且周期短。将提取的X参数模型应用于宽带功率放大器设计,匹配网络采用切比雪夫低通滤波器形式,实测与仿真对比表明:在工作频带内,输出功率均大于4W,功率附加效率都超过45%,增益在14d B左右。由此验证所提出方法的有效性。     

GaAs单片数字电路的计算机模拟

本文通过对器件物理机理的分析,确立了用于电路分析的GaAs MESFET模型。同时采用一种新的统计全局优化算法,解决了模型参数的提取问题,从而将SPICE_3A7应用于GaAs电路分析。文中对MESFET器件及相关BFL单元电路以及分频器进行了静态和动态的计算机模拟和部分优化。结果表明,程序中的模型具有相当的精度,能较好地适用于目前的数字电路;参数提取方法精度高,对参数初值要求低,是一种很有实用价值的算法。     

非理想逻辑输入对IBIS仿真的影响及改进方法

在高速数字电路端口建模标准IBIS的基础上,提出一种改进仿真电路结构和算法的方法,用于处理经由传输线传输的非理想信号影响IBIS驱动器仿真精度问题.简述了IBIS瞬态提取采的四波形算法,在IBIS驱动器模型中引入了表征输入影响的调制参数K,分析和比较了改进的模型与晶体管模型、B参数模型的仿真结果,以说明改进后精度的提高.     

晶体管直流模型参数的优化提取

本文描述了一个提取MOS场效应晶体管和双极型晶体管直流模型参数的程序。所采用的算法是Meger和Roth方法,它具有较好的收敛性。在目标函数中引入惩罚项,有效地防止了模型参数非物理解的出现。将双极型晶体管直流模型参数分组后优化提取,减少了计算量。应用本程序进行了大量实际器件参数的提取,获得了较满意的结果。     

A parameter extraction algorithm for an IGBT behavioral model

We propose a new extraction algorithm for the parameters of an insulated gate bipolar transistor dynamic behavioral model. The algorithm relies on the availability of experimental data from the manufacturers and uses Matlab optimization toolbox to extract the parameters automatically. The theoretical predictions of the algorithm are compared with both the experimental and the simulation data that use alternative extraction methods and are found to be in excellent agreement.     

Small-signal modeling of HBTs using a hybridoptimization/statistical technique

A new formulation for extracting the elements of the small-signal equivalent-circuit model of heterojunction bipolar transistors (HBTs) is proposed in this paper. This approach avoids the main problem of the conventional extraction methods which, in most cases, is the use of brute-force optimization techniques to extract a large number of parameters. At the beginning, this technique first uses the extraction procedure of a low-frequency HBT model. An analytical formulation that allows the reduction of the number of the unknowns of the low-frequency model to only two, which have to be calculated using a suitable optimization technique, is described. This makes the optimization problem much easier to handle and increases the probability for converging to the actual elements of the model, thus avoiding the converging to spurious solutions. Secondly, in order to extend the model to higher frequencies, a statistical approach is proposed to extract parasitic extrinsic elements. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 30 GHz     

低温ECL电路的特性分析及优化设计

本文在对双极器件各参数的低温特性的详细分析基础上，对低温ＥＣＬ电路的直流和瞬态特性进行了理论和实验的研究，并据此对电路进行了统一的优化设计。     

Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model

An improved direct parameter extraction method of SiGe heterojunction bipolar transistors (HBTs) for the vertical bipolar intercompany (VBIC)-type hybrid-/spl pi/ model is developed. All the equivalent circuit elements are extracted analytically from S-parameter data only and without any numerical optimization. The proposed technique of the parameter extraction, differing from the previous ones, focuses on correcting the pad de-embedding error for an accurate and invariant extraction of intrinsic base resistance (R/sub bi/), formulating a new parasitic substrate network, and improving the extraction procedure of transconductance (g/sub m/), dynamic base-emitter resistance (r/sub /spl pi//), and base-emitter capacitance (C/sub /spl pi//) using the accurately extracted R/sub bi/. The extracted parameters are frequency-independent and reliable due to elimination of any de-embedding errors. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.2-10.2 GHz over a wide range of bias points. Therefore, we believe that the proposed extraction method is a simple and reliable routine applicable to the optimization of transistor design, process control, and the improvement of VBIC compact model, especially for SiGe HBTs.     

基于器件仿真的参数提取方法研究

介绍器件参数提取的意义,并对基于工艺的参数提取和基于器件仿真的参数提取两种方法进行了比较。根据0.35 μm SOI CMOS工艺参数,构造出部分耗尽SOI NMOS结构。基于BSIM SOI模型采用局部优化,单器件提取的策略进行参数提取。最后通过将仿真与实际测试得到的参数比较,验证了该方法的准确性。     

Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models

Accurate parameters of negative bias temperature instability (NBTI) model are essential to predict the circuit lifetime during circuit design. This paper presents the extraction methods of NBTI model parameters for the NBTI reaction-diffusion (R-D) and trapping/detrapping (T/D) models. The R-D model parameters extraction mainly includes two steps: linear approximation and optimized extraction. In the first step, the term of ΔV_th^1/2n is described as approximately linear with t^0.5 after the coordinate system conversion, where ΔV_th is the degradation in threshold voltage and t is elapsing time. Then, the model parameters can be roughly calculated. In the second, an objective function of the genetic algorithm (GA) has been built up and its constraints can be determined by referring the values gotten from the first step. After solving the function, a set of accurate parameters of the NBTI model can be achieved. Similarly, the T/D model parameters extraction involves the curves fitting and further optimization based on the GA. Both the R-D and T-D extraction methods have been validated using a 40-nm CMOS process, and it is easy to implement the extraction procedures in a program extractor.     

Degradation mapping in high power IGBT modules using four-point probing

An electrical four-point probing approach is used to estimate local degradation in high power insulated gate bipolar transistor modules subjected to power cycling. By measuring electrical parameters of selected units and components the possibility of mapping the degradation is demonstrated. The development of failures is put in accordance with physical phenomena and materials fatigue. These results are directly usable for reliability purposes with a focus on geometry optimization and enhanced lifetime prediction methods.     

SiGe HBT小信号等效电路的参数直接提取

提出了一种求解硅锗异质结双极型晶体管(SiGe HBT)小信号等效电路模型的参数直接提取方法.整个提取过程使用由小信号等效电路推导出的一系列解析表达式,不使用任何数值优化方法.参数提取结果使用ADS软件仿真验证.结果表明,该方法简单易行,较为精确.     

双极场引晶体管:I.电化电流理论(双MOS栅纯基)

本文描述双极场引晶体管(BiFET)及其理论.把两维晶体管分解成两个一维晶体管,得到解析方程.以表面势为参变量,采用电化(准费米)势梯度驱动力计算电流.提供实用电极直流电压及器件参数范围,随直流电压变化,输出和转移电流和电导.电子和空穴表面沟道同时存在,这新特点可以用来在单管实现CMOS电路倒相和SRAM存储电路.