Co/Pd纳米多层膜的制备及其磁性能

以单晶Si(111)为基底,采用双槽法电结晶制备了Co/Pd纳米多层膜,使用电化学石英晶体微天平(EQCM)精确测定沉积过程中Co和Pd膜的质量随沉积时间的变化.通过电位阶跃法探讨了沉积层晶体成核机理,得到Co和Pd电结晶初期均为三维瞬时成核过程. X射线衍射(XRD)研究表明,Co和Pd的结晶与生长显示择优取向,出现了111Co-Pd的合金峰.并用物性测量系统(PPMS)测试了Co/Pd多层膜的磁性能,所得磁滞回线表明:矫顽力随着多层膜磁性层厚度的减小而增大,可达到9.0×104 A/m.     

退火对Co/Cu多层膜微观结构和磁性能的影响

研究了退火对磁控溅射Co/Cu多层膜微观结构和磁性能的影响。用扫描电子显微镜(SEM),透射电子显微镜(TEM)观察了沉积态及在不同温度退火后Co/Cu多层膜表面及截面的显微组织,用能谱仪(EDS)分析了退火后Co/Cu多层膜截面的元素分布,用综合物性测量系统(PPMS)对Co/Cu多层膜的磁滞回线进行了测量。表面显微组织的观察结果表明退火温度低于450℃时,多层膜表面形貌变化不大,均是由细小的晶粒组成。退火温度高于该温度后,随退火温度的升高,晶粒迅速长大。截面显微组织的观察结果和元素分布的测试结果表明,磁控溅射的Co/Cu多层膜内有大量柱状晶,随退火温度升高柱状晶长大。当退火温度达到600℃后,多层膜内的层状结构被破坏。磁滞回线的测量结果表明,退火温度低于400℃时,Co/Cu多层膜的磁性能变化不大,退火温度高于该温度后,随退火温度升高,矫顽力迅速增大。     

Co/Cr/Pd多层膜的磁性及其准确性

研究了测量程序对不同Cr层厚度的Co／Cr／Pd多层膜磁性的影响，分析了反磁化机理在不同测量程序中对磁性准确性的影响。     

Spin-valve magnetoresistance in Co/Si/（Co/Cu/Co） multilayers

A series of Co/Si/（Co/Cu/Co） multilayers and Co/Si/Co sandwiches were prepared by high vacuum electron-beam evaporation. It was found that a Si spacer （≥0.9 nm） could greatly decrease the interlayer coupling in Co/Si/Co sandwiches and there was no magnetoresistance（MR） or spin-valve MR in them due to the high resistivity of Si spacer. While in Co/Si/（Co/Cu/Co） multilayers, we observed a spin-valve MR of about 0.5% through a nominal 2.7 nm Si spacer at room temperature. The spin-valve MR in Co/Si/（Co/Cu/Co） multilayers was attributed to the enhanced spin polarization of conduction electrons caused by the top Co/Cu/Co sandwich with GMR mechanism and high spin-dependent scattering at Co/Cu interface.     

Co/Pt多层膜的结构和饱和磁化强度

采用离子束溅射技术制备Ｃｏ／Ｐｔ多层膜,用ＲＢＳ、小角ＸＲＤ和断面ＴＥＭ研究了多层膜的周期性调制结构,用ＶＳＭ研究了磁性层Ｃｏ和顺磁性层Ｐｔ的厚度变化对饱和磁化强度的影响。结果表明,多层膜具有良好的周期性层状结构,和设计值一致。样品的饱和磁化强度（Ｍｓ）随Ｃｏ层厚度增加而增大,随Ｐｔ层的厚度增大而减小。当Ｃｏ层和Ｐｔ层的厚度比一定时,样品的饱和磁化强度不受周期数的影响,符合Ｍｓ＝ＭｃｏｔＣｏ／Ｄ模     

Cu/Ni和Cu/Nb纳米多层膜的应变率敏感性

为研究调制周期和界面结构对纳米多层膜应变率敏感性的影响,采用电子束蒸发镀膜技术在Si基片上制备了不同周期(Λ=4 nm,12 nm,20 nm)的Cu/Ni纳米多层膜,采用磁控溅射技术在Si基片上制备了不同周期(Λ=5 nm,10 nm,20 nm)的Cu/Nb纳米多层膜。在真空条件下,对Cu/Ni纳米多层膜进行了温度分别为200和400℃、时间4 h的退火处理,对Cu/Nb纳米多层膜进行了温度分别为200、400和600℃,时间为4 h的退火处理。采用XRD和TEM表征了Cu/Ni和Cu/Nb纳米多层膜的结构,采用纳米压痕仪获取了不同加载应变率(0.005、0.01、0.05和0.2 s~(-1))下纳米多层膜的硬度。结果表明,应变率敏感性受到界面结构和晶粒尺寸的影响,非共格界面密度提高以及晶粒尺寸变大均可导致应变率敏感性下降。当周期变大时,Cu/Ni纳米多层膜的非共格界面密度提高,晶粒尺寸变大,应变率敏感性指数m减小;当周期变大时,Cu/Nb纳米多层膜的非共格界面密度下降,晶粒尺寸变大,m基本不变。随退火温度上升,Cu/Ni和Cu/Nb纳米多层膜应变率敏感性大体上呈现下降趋势,这是由退火过程中非共格界面密度上升和晶粒长大共同引起的。     

溅射沉积Cu/W纳米多层膜结构与性能

以单晶硅和聚酰亚胺为衬底,用磁控溅射沉积调制周期λ=25~150 nm、调制比η=0.5~2的Cu/W纳米多层膜,用XRD、SEM、EDS、AFM、微力测试系统、纳米压痕仪和四探针法对多层膜微观结构、表面形貌和力学及电学性能进行研究。结果表明:λ和η显著影响多层膜结构和性能。多层膜Cu层和W层均为纳米晶结构,分别呈Cu(111)和W(110)择优取向。W(110)晶面间距减小且减幅与1/λ或η值呈正相关,Cu/W层间界面处存在扩散混合层。表面Cu层晶粒尺寸随Cu层厚增加而增大。裂纹萌生临界应变εc总体上随λ增大或η减小而下降,屈服强度σ0.2、显微硬度H和电阻率ρ总体上均与λ或η呈负相关。因Cu层和W层厚度随λ或η的变化而改变,相应地改变了Cu层晶粒度及其晶界密度、W层体积分数和Cu/W层间界面数量,使位错运动能力及电子散射效应变化,最终改变Cu/W纳米多层膜性能。     

Cu/X(X=Cr,Nb)纳米多层膜力/电学性能的尺度依赖性

利用纳米压痕实验以及四探针法,系统研究了相同层厚Cu/X(X=Cr,Nb)纳米金属多层膜的力学性能(强/硬度)和电学性能(电阻率)的尺度依赖性.微观分析表明:Cu/X多层膜调制结构清晰,Cu层沿{111}面择优生长,X层沿{110}面择优生长.纳米压入结果表明,Cu/X多层膜的强度依赖于调制周期,并随调制周期的减小而增加.多层膜变形机制在临界调制周期(λ~c≈25 nm)由Cu层内单根位错滑移转变为位错切割界面.多层膜的电阻率不仅与表面/界面以及晶界散射相关,而且在小尺度下受界面条件显著影响.通过修正的FS-MS模型可以量化界面效应对多层膜电阻率的影响.Cu/X纳米多层膜可以通过调控微观结构实现强度-电导率的合理匹配.     

双槽电沉积法制备Cu/Ag纳米多层膜

双槽电沉积法制备了不同调制波长的Cu/Ag金属多层膜(Cu膜和Ag膜等厚),用扫描电子显微镜观察了多层膜的层状结构,并研究了不同调制波长下多层膜的显微硬度变化.结果表明:双槽电沉积法制备的Cu/Ag多层膜层状结构明显.当调制波长大于100 nm时,显微硬度随调制波长减小而增加;当小于100 nm时,硬度随调制波长减小而...     

Co/Pt多层膜的调制结构对磁光性能的影响

研究了Ｃｏ／Ｐｔ多层膜中,Ｃｏ层厚度,Ｃｏ、Ｐｔ含量比,溅射温度对多层膜磁光性能的影响。研究发现Ｃｏ层厚度及Ｃｏ、Ｐｔ含量比对Ｃｏ／ｐｔ多层膜的磁光性能起决定性影响。当ｔＣｏ〈０．４ｎｍ,ｔＣｏ／ｔＰｔ＝１／２时。可获得较好的综合磁光性能;适当提高溅射时基体的温度,可改善多层膜的结晶性并获得较好的调制周期结构,最终改善其磁光性能。     

[Co／Ti],[Co／Cu（Ni）]多层膜的结构与磁性

用双对向靶溅射方法制备了具有非晶磁性的「Ｃｏ／Ｔｉ」３０，「Ｃｏ／Ｃｕ（Ｎｉ）３０」两组多层膜，分别用Ｘ射线衍射，透射电镜和振动样品磁强计做了结构和磁性测量，在以非晶Ｃｏ和Ｃｉｕ－Ｎｉ合金构成的「Ｃｏ／Ｃｕ（Ｎｉ）」多层膜中，发现饱和磁化强度Ｍｓ随非磁性层厚度ｄｓ的增国发生振荡变化；在以非晶Ｃｏ和Ｔｉ构成的「Ｃｏ／Ｔｉ」多层膜中，ＭＳ和则随ｄｓ的增加而减小。     

Magnetic anisotropy of Co/Cu/Co nanocrystalline films upon magnetic annealing

The magnetic anisotropy of Co/Cu/Co films with the thickness of the copper spacer corresponding to the antiferromagnetic and ferromagnetic indirect exchange coupling between Co layers has been studied. The films deposited on naturally oxidized (111) Si single crystals were produced by magnetron sputtering. The films were annealed at 240°C. Such an annealing virtually neither changes the grain size nor leads to the mixing of layers; i.e., no disturbance of the coupling type between the cobalt layers takes place. Changes in the surface and induced magnetic anisotropy and in the effective energy of indirect exchange coupling have been studied upon annealing in the presence and absence of a magnetic field. It has been found that the shape of surface inhomogeneities in the films changes upon annealing in the magnetic field applied along the film plane, which substantially affects, the surface anisotropy. In the films characterized by antiferromagnetic coupling, the easy axis of magnetization is induced only in the magnetic fields exceeding the saturation field. The induced-anisotropy constant estimated theoretically agrees well with those determined experimentally.     

Thermodynamic stability of Co/Cu multilayered nanostructures

In this paper, the Regular Solution Model (RSM) and the Cluster/Site Approximation (CSA) were used to study the unmixing as a function of the thickness of the Co/Cu metal layers. The results show that decreases in the thickness of the layers leads to a lowering of the demixing critical temperature.     

Behavior of magnetic and magnetoresistive properties of nanocrystalline Co/Cu/Co films during step-by-step annealing

Three-layered Co/Cu/Co films with d _Cu = 1.0 and 2.1 nm (corresponding to the first and second antiferromagnetic maxima, respectively) and single-layer Co films produced during the same manufacturing cycle of magnetron sputtering in an argon atmosphere have been studied. The behavior of the coercive force and magnetoresistance ratio during step-by-step annealing in a temperature range of 250–400°C has been investigated. The correlation factor between the magnetoresistance ratio and saturation field (or the energy of indirect exchange coupling between Co layers) upon step-by-step annealing is 0.97 and 0.95 for the first and second antiferromagnetic maxima, respectively. In a temperature range of 20–300°C, the correlation factor between the coercive force and saturation field is 0.98–0.99. At T _an > 350°C corresponding to intense grain growth, the violation of the correlation between H _c and H _s takes place. Limits of the time and temperature stability of the Δρ/ρ ratio and H _c during the step-by-step annealing of the films have been determined. The behavior of Δρ/ρ, H _c, and magnetic anisotropy of the three-layered films is shown to be due to structural changes (grain size, amplitude of roughness). The behavior of the magnetic anisotropy constants K _u ¹ and K _u ² depends on the annealing temperature and thickness of the nonmagnetic spacer.     

Co/C与Co-Pt/C膜的微结构研究

利用磁控溅射方法制备Co/C和Co-Pt/C薄膜.用X射线衍射谱(XRD)和透射电子显微镜(TEM)测量样品结构和微观形貌.对Co/C和Co-Pt/C晶粒的大小进行计算,表明Co/C颗粒膜Co是以团簇的形式镶嵌在C层中的,面心立方(fcc)COPt3和面心四方(fct)Copt两个稳定有序相在Co-Pt/C薄膜中很好地...     

Co含量对MOFs衍生的片状Co/C复合材料吸波性能的影响

金属有机骨架(MOFs)衍生的磁性金属/碳复合材料在轻质吸波材料领域展现出巨大的潜力。以二维片状结构Co/Zn双金属MOFs为前驱体通过高温热解合成片状Co/C复合材料,系统研究了前驱体中Co/Zn摩尔比对复合材料形貌结构、石墨化程度、磁性能和吸波性能的影响。结果表明：金属Co纳米微粒在碳骨架中均匀分布,随着Co含量的减少,复合材料中碳组分的石墨化程度逐渐降低,铁磁特性逐渐减弱;片状Co/C复合材料的吸波性能随着Co含量的降低先增强后减弱,填充比例为30 wt%、Co/Zn摩尔比为4:1时片状Co/C复合材料具有最佳吸波性能,厚度为2.11 mm时在10.8 GHz处最小反射率为-23.09 dB,最大有效带宽(反射率小于-10 dB)在厚度为1.62 mm时达到4.96 GHz。复合材料良好的吸波性能是由于均匀分布的磁性Co纳米粒子和碳骨架的协同作用,在增强电磁波导电损耗和界面极化损耗的同时,改善了阻抗匹配性能。