A transformer-loaded receiver front end for 2.4 GHz WLAN in 0.13μm CMOS technology

A 2.4 GHz radio frequency receiver front end with an on-chip transformer compliant with IEEE 802.11b/g standards is presented.Based on zero-IF receiver architecture,the front end comprises a variable gain common-source low noise amplifier with an on-chip transformer as its load and a high linear quadrature folded Gilbert mixer.As the load of the LNA,the on-chip transformer is optimized for lowest resistive loss and highest power gain.The whole front end draws 21 mA from 1.2 V supply,and the measured results show a double side band noise figure of 3.75 dB,-31 dBm IIP3 with 44 dB conversion gain at maximum gain setting.Implemented in 0.13μm CMOS technology,it occupies a 0.612 mm~2 die size.     

A switch‐controlled multimode narrowband receiver RF front‐end

This work illustrates a flexible and convenient method to build a multimode narrowband receiver RF front‐end by means of controlled switches, switched capacitors, and switched inductors. The front‐end comprises a dual‐gain‐mode narrowband low‐noise amplifier (LNA) and a dual‐linearity‐mode mixer. A four‐mode receiver RF front‐end constructed with the dual‐gain‐mode LNA and the dual‐linearity‐mode mixer operating in frequency band range from 1800 to 2050 MHz was demonstrated with an IBM 90‐nm CMOS process. The front‐end achieves a 1/1.6 dB noise figure, 30/20 dB power gain, and 16/?10 dBm third‐order input intercept point while draws a 5.9/3.6 mA current from a 1.8‐V supply voltage at the low noise mode and high linearity mode, respectively. The proposed technique can be employed to build an intelligent mobile system.     

A 119 GHz planar Schottky diode mixer for a space application

A planar single-ended GaAs Schottky diode mixer has been designed, built, and tested at 119 GHz. The mixer front end includes also a waveguide filter for image rejection, and a temperature compensated ring filter. Measurements at room temperature showed a conversion loss of 7 dB and a noise temperature of 900 K (SSB). At 100 K the measured noise temperature of the mixer was 500 K (SSB).     

一种新型超高频射频识别射频前端电路设计

设计了一种低功耗高线性度的新型超高频射频识别射频前端电路.在LNA的设计中,通过在输入端采用二阶交调电流注入结构以提高线性度,在输出端采用开关电容结构以实现工作频率可调;在混频器的设计中,在输入端采用同LNA相同的方法以提高线性度,而在输出端采用动态电流注入结构以降低噪声.该电路采用0.18μmCMOS工艺,供电电压为1.2V,仿真结果如下:输入阻抗S11为-23.98dB,IIP3为5.05dBm,整个射频前端电路的增益为10dB.     

An L-Band MIC Front End for an IFF Receiver

A microwave integrated circuit (MIC) front end which satisfies stringent environmental and filtering requirements has been developed; the design objectives were based on the requirements typical of an L-band receiver for an identification friend or foe (IFF) transponder. The front end includes a preselector, a balanced mixer, and a multiplier for providing the local oscillator (LO) signal. A compact low-loss design has been achieved for the bandpass filter portion of the preselector through the use of "hairpin" resonators. Use of a semilumped 3-dB coupler has resulted in a significant reduction in the size of the mixer. The front-end noise figure was measured to be 10.4 dB at room temperature, with a maximum of 14.0 dB at 125/spl deg/C. All spurious responses were measured to be more than 80 dB down, and LO reradiation was -67 dBm. Dynamic range was greater than 70 dB.     

A 200-MHz sub-mA RF front end for wireless hearing aid applications

A hearing-aid system with RF connection between both ear-pieces is described and its transceiver is introduced. A suitable 200-MHz RF front end has been implemented in a 0.8-μm BiCMOS technology. Low power consumption and area constraint were key requirements. The chip comprises a low noise amplifier (LNA), a single balanced mixer, a varactor tuned LC local oscillator with buffer and a 16/17 dual-modulus prescaler. The LNA has a measured gain of 17.5 dB at 200 MHz. The conversion g_m of the mixer is 1.88 mS. The overall voltage gain and noise figure are 26 dB and 5.2 dB, respectively. The voltage-controlled oscillator's (VCO's) phase noise is -104.7 dBc/Hz at an offset of 24 kHz     

A Radiometric Method for Measuring the Insertion Loss of Radome Materials

Though radomes have been used for years as a means of protecting antennas from the elements, little appears in the Iiterature to aid the engineer in his choice of the radome material to use in a particular installation. This may be due to the fact that many radome materials are adequate when used with a receiving system having a mixer (i.e., relatively hot) front end. However, an improper choice of radome material can seriously degrade a receiving system that employs a maser or other low-noise front end. A radiometric technique for the measurement of insertion loss is described, and a sample calculation, including error analysis, is presented.     

The RF Pulse Susceptibility of UHF Transistors

The electromagnetic susceptibility of UHF transistors is investigated. The 2N5179 RF amplifier type transistor was selected as a representative UHF transistor because of its chip structure. It is a silicon n-p-n epitaxial planar transistor with an interdigitated baseemitter metallization pattern. Several manufacturer's versions were tested. A single RF pulse at 240 MHz was applied directly to the base terminal with the emitter terminal grounded. The incident RF pulse power required to cause a 50 percent failure rate is in the 35-70 W range for a 3 ?s pulse duration and in the 150-450 W range for a 0.3 , ?s pulse duration. The primary variable is the percentage of the incident power absorbed by the transistor. The absorbed pulse energy required to cause a 50 percent failure rate is in the 20-35 ?Joule range for 0.3-3.0, ?s pulse durations. The gs pulse and CW RF burnout powers for 2N5179 transistors are similar to those for 1N23 mixer diodes. The data suggest that UHF receivers with an RF transistor amplifier front end may be as susceptible to intense EMR at UHF frequencies as are UHF receivers with a mixer diode front end.     

Integrated 6-GHz receiver front-end circuits for a radio relay system

A 6-GHz integrated front end was made using microwave integrated circuits and satisfying system specifications. The front end consists of a mixer and a local oscillator made from a 1.5-GHz phase-locked loop and a frequency quadrupler. A noise figure better than 6 dB was achieved using Si Schottky barrier diodes.     

Ka-Band Front End with Monolithic, Hybrid, and Lumped-Element IC's

A Ku-band front end has been developed which integrates a low-loss wide-band monolithic mixer, a two-stage hybrid IF amplifier, and a lumped-element Gunn local oscillator (LO). Small size (0.5 cubic in), high performance, and potentially low production cost have been demonstrated through the application of highly compatible IC construction techniques.     

基于802.11协议的0.34 THz无线局域网实验系统

描述了一套由基于固态半导体电子学技术的0.34 THz无线通信收发前端和基于802.11协议的无线局域网设备实现的0.34 THz无线局域网实验系统。0.34 THz收发前端采用基于肖特基二极管的倍频及混频技术以及基于精密机加工艺的太赫兹无源器件实现,主要由0.34 THz腔体滤波器、0.34 THz谐波混频器、0.17 THz本振倍频链和馈电偏置电路组成。实测结果表明：研制的由3节点组成的0.34 THz无线局域网实验系统可在1.15 m的距离上实现节点间大于800 KB/s的组网通信。     

A Compact 60-GHz Transmitter--Receiver

A new, compact, low-cost, and reliable 60-GHz transmitier-receiver was developed for civilian use. Common components are used for transmitting and receiving functions. An IMPATT oscillator generates the millimeter-wave output power for both the transmitter and the receiver local oscillator. A common antenna is also used for transmitting and receiving signals without a circulator. A mixer is used as a modulator in transmission as well as a receiver front end. A noise figure of 13 dB is obtained by a balanced mixer with a 200-MHz IF frequency differential preamplifier. A reliable packaged GaAs varactor diode is used for the mixer-modulator (MM).     

Analog MMICs for millimeter-wave applications based on a commercial0.14-μm pHEMT technology

This paper describes recent results obtained from the monolithic-microwave integrated-circuit design activity at Chalmers University, Goteborg, Sweden. The goal is to design all circuits needed for the front end of a 60-GHz wireless local area network and to build various system demonstrators. Some recent experimental results from this activity like different 60-GHz amplifiers, a general-purpose IF amplifier, a 60-GHz resistive mixer, and frequency multipliers are reported in this paper. Parameters such as the gain, conversion loss, noise figure, dc-power dissipation, as well as the model used in the simulations are reported and discussed     

一种低噪声高线性度射频前端电路设计

介绍了超高频接收系统射频前端电路的芯片设计。从噪声匹配、线性度、阻抗匹配以及增益等方面详细讨论了集成低噪声放大器和下变频混频器的设计。电路采用硅基0.8μm B iCM O S工艺实现,经过测试,射频前端的增益约为18 dB,双边带噪声系数2.5 dB,IIP 3为+5 dBm,5 V工作电压下的消耗电流仅为3.4 mA。     

抗干扰导航接收机射频前端线性度优化设计

针对干扰条件下无自动增益控制(AGC)电路的卫星导航接收机射频前端的设计,在给定A/D采样芯片和混频器的条件下,根据抗干扰需求,提出了线性度指标的优化设计方法,得出了各级电路的增益、1dB压缩点、三阶交调截点和噪声系数的求解方法,以此指导器件选型。根据此优化设计方法,设计了某卫星导航系统的一种接收机射频前端,达到预期抗干扰效果,证明此方法有效可行。     

The backward-wave converter, an electronically swept receiver

The backward-wave converter is a hybrid device that combines the essential elements of an electronically swept receiver front end in a single vacuum envelope. The device directly converts an RF signal to an IF signal with the mixing processes taking place in an electron beam. The tuning is completely electronic, and octave frequency coverage has been achieved. Compared to the conventional crystal mixer system the device provides a number of advantages such as 1) elimination of crystal burnout, 2) isolation of local oscillator power from the antenna, 3) preselection and 4) voltage tunability at high rates of speed over a large frequency range. A theoretical analysis that compares satisfactorily with experimental data has been developed.     

A 1-GHz CMOS up-conversion mixer

A high-frequency linear MOS mixer topology is presented for the implementation of a 1-GHz up-conversion mixer in a standard 0.7-μm CMOS technology. The high output bandwidth has been achieved by the development of an nMOS-only current amplifier that converts the modulated current of the nMOS mixing transistor biased in the linear region to the RF output voltage     

GSM变频直放站的优化设计

本文介绍了GSM直放站的应用价值,以及变频直放站的发展前景.并介绍了一种本振集成于混频器中直放站优化设计方案,这种设计方案既可以减少设计的难度和调试的过程,又可以减少在电路中的彼此信号干扰.为变频直放站的设计和应用提供更优的方法.     

A low-power multirate differential PSK receiver for space applications

Wireless communication for deep-space and satellite applications needs to accommodate the Doppler shift caused by the movement of the space vehicle and should consume low power to conserve the onboard power. A low-power phase-shift keying (PSK) receiver has been designed for such applications. The receiver employs double differential detection to be robust against Doppler shift and uses subsampling with a 1-bit A/D converter and digital decimation architecture at the front end to achieve low-power consumption. The receiver is also designed to be programmable to operate using single-stage differential detection instead of double-stage differential detection at low Doppler rates to obtain optimum performance. Furthermore, the baseband can be employed in either direct subsampling or intermediate frequency (IF)-sampling front ends. Both front ends offer minimal power consumption and differ from traditional types by replacing some conventional analog components such as a voltage-controlled oscillator, mixer, or phase-locked loop with their digital counterparts. This eliminates problems due to dc offset, dc voltage drifts, and low-frequency (LF) noise. The paper also includes a brief discussion of the nonidealities existing in real applications. The proposed phase shift keying (PSK) receiver supports a wide range of data rates from 0.1-100 Kbps and has been implemented in a CMOS process.     

A Ku-band integrated receiver front end

A Ku-band integrated receiver front end has been fabricated on 20-mil aluminum oxide substrates. The receiver consists of a balanced mixer and a Gunn oscillator within an area of 0.300/spl times/0.325 inch. The performance of both packaged and unpackaged microstripline receivers is described. Using external RF tuning, a noise figure of 9 dB at 18 GHz was obtained. A higher Q Gunn oscillator design is needed for more reliable single-frequency operation.