硅基PZT铁电薄膜的制备与性能研究

用溶胶-凝胶（Sol-Gel）方法制备了硅基Pb(Zr0.53Ti0.47)O3(PZT)铁电薄膜。分析了PZT铁电薄膜的表面形貌、晶化程度、界面状态等性质。基于上述分析结果提出并实现了低温退火处理制备有PT过渡层的PZT铁电薄膜的工艺流程。测试了低温制备的PZT铁电薄膜的C-V、漏电等电性能,发现在Sol-Gel法制备PZT铁电薄膜的工艺中加入PT过渡层,有助于提高PZT薄膜的品质。     

一种新型硅基PT/PZT/PT夹心结构的电性能研究

以无机锆盐为原料,用溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）法成功地在Ｐｔ／Ｔｉ／ＳｉＯ／Ｓｉ衬底上制备出一种新型Ｐｂ－ＴｉＯ３／Ｐｂ（Ｚｒ０．５３Ｔｉ０．４７）Ｏ３／ＰｂＴｉＯ（ＰＴ／ＰＺＴ／ＰＴ）夹心结构。这种结构对于ＰＺＴ的晶化有很好的促进作用,其最终的退火温度为７００℃Ｃ－Ｖ特性,介电步率响应,漏电等电性能测试表明这一新型夹心结构具有良好的铁电和介电性能。     

两种湿化学法制备PZT陶瓷的成分和结构研究

用两种湿化学法(水热法和溶胶-凝胶法)制备了PZT纳米粉体，并经烧结得到PZT微晶陶瓷。对两种方法所得的陶瓷进行介电测量。分析表明：水热法制粉后经烧结所得陶瓷的锆钛比(Zr／Ti)与原料的理论配比有较大的偏离，而溶胶-凝胶法制粉所得陶瓷的锆钛比(Zr／Ti)能较好地反映原料的锆钛配比。     

硅基PZT铁电薄膜的界面和表面研究

用高分辨岸民镜等手段研究了溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）工艺制备的硅基Ｐｂ（Ｚｒ,Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜,发现在ＰＺＴ的上表面生成了ＳｉＯ２,ＰＺＴ与硅衬底的界面处形成了无定型的ＳｉＯｘ层并有铅的沉积,而且热处理温度越高,这种现象越显著。这些结构严重影响了ＰＺＴ铁电薄膜的品质及其应用。在分析上述结构产生机制的基础上提出了Ｓｏｌ－Ｇｅｌ工艺的改进方法。     

准分子激光制备多层铁电薄膜的C—V特性研究

采用脉冲准分子激光工艺，在ｐ型Ｓｉ（１００）单晶基片上，成功地淀积了ＢＩＴ、ＰＺＴ／ＢＩＴ和ＢＩＴ／ＰＺＴ／ＢＩＴ等多层结构的铁电薄膜，采用低频阻抗分析仪，分析了它们的Ｃ－Ｖ特性曲线的记忆窗口，讨论了记忆窗口与频率的关系，记忆窗口与多层结构的关系。结果表明，三层结构铁电薄膜的Ｃ－Ｖ特性的窗口优于双层和单层结构的铁电薄膜。     

PbZr0.40Ti0.60O3非晶薄膜透射光谱性质研究

采用溶胶凝胶方法在石英玻璃上制备了均匀透明的PbZr0.40Ti0.60O3(PZT)非晶薄膜，测量了200-1100nm的紫外可见近红外透射光谱，根据经典的包络计算方法，同时获得薄膜在透明振荡区的折射率，消光系数以及厚度，薄膜的折射率色散关系可以通过单电子sellmeier振荡模型成功地进行解释。最后，根据Tauc's法则，得到PbZr0.40Ti0.60O3非晶薄膜的禁带宽度为3.78eV。     

非制冷红外焦平面阵列BST铁电薄膜的制备及性能研究

采用改进的溶胶-凝胶方法,在Pt／Ti／SiO2／Si基片上成功地制备出不同组分,具有钙钛矿型结构的BST铁电薄膜。BST5、BST10和BST15铁电薄膜的介电系数εr,分别为375、400和425,介电损耗tgδ分别为0．041、0．024和0．010,剩余极化强度Pt分别为2μc／cm^2、2.5／μc／cm^2和1．7μc／cm^2,矫顽场Ec分别为40kV／cm、50kV／cm和35kV／cm,是制备非制冷红外焦平面阵列的优选材料。     

HgCdTe MIS器件制备及其C-V特性研究

通过在P-HgCdTe上生长阳极硫化膜和ZnS介质钝化层,制备出了性能较好的MIS器件,并通过对MIS器件C-V特性的分析,获得了ZnS/自身钝化膜/P-HgCdTe的界面特性.所测的界面电荷密度在1010～1011cm-2之间,平带电压在2 V以下.     

p-CZT的钝化处理和C-V特性研究

采用NH4F/H2O2作为p-CZT晶片的表面钝化剂,对未钝化与钝化表面处理的p-CZT晶片的C-V特性进行了对比研究.用XPS分析了钝化前后CZT晶体表面成分,发现钝化后CZT晶片表面形成厚度为3.1 nm的TeO2氧化层.用Agilent 4294A高精度阻抗分析仪,在1 MHz下对未钝化的和钝化的CZT晶片进行C-V测试.对测试结果的计算表明,钝化提高了Au与CZT接触的势垒高度(∮)b.未钝化的(∮)b为1.393 V,钝化后(∮)b变为1.512 V.     

MFIS结构的C-V特性

研究了运用SOL-GEL方法制备的Au/PZT(铅锆钛)/ZrO2/Si结构电容即MFIS(Metal/Ferroelectr c/Irsulator/Semiconductor)电容的方法,并对其进行了SEM、C-V特性测试及ZrO2介质层介电常数分析.研究了C-V存储窗口(Memory WindoW)电压与铁电薄膜和介质层厚度比的关系,得出MFIS电容结构中最佳铁电薄膜和介质层厚度比为7 10左右,在外加电压5V-+5V时存储窗口可达2.52V左右.     

MFIS结构的C-V特性

研究了运用SOL-GEL方法制备的Au/PZT(铅锆钛)/ZrO2/Si结构电容即 MFIS(Metal/Ferroelectric /Insulator/Semiconductor)电容的方法,并对其进行了SEM、C- V特性测试及ZrO2介质层介电常数分析 .研究了C-V存储窗口(Memory Window)电压与铁电薄膜和介质层厚度比的关系,得出MFIS电容结构中最佳铁电薄膜和介质层厚度比为7～10左右 ,在外加电压-5V～+5V时存储窗口可达2.52 V左右 .     

平面栅条状Schottky结容压特性

<正> 人们在研究微波单片集成电路时,提出了平面栅条状Schottky结变容管。本文根据“椭圆柱面结耗尽层分析”结果,分析了平面栅条状Schottky结电容与偏压的关系。 平面栅条状Schottky结变容管示意于图1,图中电极A(长为l_a,宽为W)是Schottky势垒金属,电极B(长为l_b)与n-GaAs间呈欧姆接触,电极A、B间距为l_(ab)。显然,这种“栅状”变容管的制作与GaAs MESFET器件工艺类似。 如图1(b)所示,在电极A上外加一偏压V_A(负值)后,电极A下n-GaAs中即出现相应的耗尽层,假设完全耗尽,在椭圆坐标中(图2),外加偏压与耗尽层的关系可表示为     

变容二极管C-V特性的控制技术

本文针对变容二极管生产难点：C－V曲线的控制,在理论上分析了PN结纵横向结构对PN结C－V特性、串联电阻、反向电流的影响,得出了适当减小芯片面积,调高杂质浓度可以不增大串联电阻而减小反向电流、改善C－V特性的结论,并应用于生产。     

基于C-V,I-V,Q-V特性的铁电电容新模型

推导出描述铁电电容电气特性的新模型.铁电电容可以等效为开关电容(电畴电容)和非开关电容(普通线性电容)的并联,而电畴电容可以看作是由电偶极子组成的铁电材料、上电极和下电极组成.根据实验测试的铁电电容的C-V特性,选定电偶极子矫顽电压的概率密度函数为t分布,从而推导出只用6个参数描述的铁电电容的C-V,I-V和Q-V关系式,根据这些关系式仿真的结果与实验结果基本吻合.     

基于C-V,I-V,Q-V特性的铁电电容新模型

推导出描述铁电电容电气特性的新模型．铁电电容可以等效为开关电容（电畴电容）和非开关电容（普通线性电容）的并联,而电畴电容可以看作是由电偶极子组成的铁电材料、上电极和下电极组成．根据实验测试的铁电电容的C-V特性,选定电偶极子矫顽电压的概率密度函数为t分布,从而推导出只用６个参数描述的铁电电容的C-V,I-V和Q-V关系式,根据这些关系式仿真的结果与实验结果基本吻合．     

退火处理对锑化铟MIS器件C-V特性的影响

采用原子层沉积技术制备Al2O3薄膜作为InSb材料介电层,制备了MIS器件,研究了金属化后不同退火温度对界面特性的影响.利用C-V测试表征了MIS(metal-insulator-semiconductor)器件的界面特性,结果表明Al2O3介电层引入了表面固定正电荷,200℃和300℃退火处理可有效减小慢界面态密度...     

C-V Characteristics of GaP MOS diode with anodic oxide film

Gallium phosphide was anodically oxidized in an aqueous H2O2solution and MOS diodes were fabricated by the evaporation of aluminum. The resistivity and electric breakdown strength were higher than 10¹⁴Ω.cm and 6 × 10⁶V/cm, respectively. Almost no frequency dispersion was observed in the C-V curves from 100 Hz to 1 MHz. The C-V curve showed the injection-type hysteresis. From the hysteresis window, the transferred charged carriers were estimated to be about 9 × 10¹¹/cm². By leaving the diode biased at negative voltage or by shining light with energy higher than 1.8 eV, the curve shifted to negative voltage direction. The results indicate that the density of the fast interface states which follow the 100-Hz signal is very low but there exist deep electron traps with activation energy higher than 1.8 eV near the surface in the oxide film and the shallower electron traps which cause the hysteresis in the dark.     

Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films

Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.     

Electrochemical C——V Characteristics and Photoluminescence of a—C ： N Films

Amorphous carbon (a—C) films and amorphous carbon films incorporating with the nitrogen (a-C : N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a--C : N films was n--type. Subsequently, a comparative studies of a--C and a- C : N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C：N films was more intense compared with the other three bands caused by amorphous C in the a-C films.