正交铁心可控消弧线圈的控制特性分析

正交可控消弧线圈具有可靠性高,控制简单等特点。本文通过对不同磁化曲线模型的对比分析,给出了能够较为适合描述正交可控消弧线圈磁化曲线的混合分段拟合磁化曲线法,该磁化曲线仿真对正交铁心可控消弧线圈的研究起到了极为重要的作用。基于该消弧线圈的磁化曲线,可分析得到正交铁心可控消弧线圈的控制特性、控制外特性、调节特性。     

正交消弧线圈的分析以及在动态接地故障补偿系统中的应用

正交消弧线圈具有较宽调节范围,较少谐波含量,易于控制.线圈电抗调节采用动态正交线圈磁控制,反映快速准确.消弧线圈工作在远离谐振点状态,控制电网电容电流,瞬间达到所需补偿状态.当发生接地故障时,它可以检测并快速跟踪故障,采用并联电阻进行电流检测,提高检测的灵敏度.通过晶闸管开关电容灵活调节消弧线圈补偿电感量,控制电感电流输出,来补偿故障接地电容电流;动态消弧线圈补偿系统灵活高效.     

消弧线圈补偿装置的改造

结合总降消弧线圈补偿装置的改造，阐述了消弧线圈自动跟踪补偿装置的工作原理，优点及改造过程中应注意的几个问题。     

浅析消弧线圈在10kV配电网中的应用

随着经济水平的提高,配电网中电缆的使用量日趋提高,由此而产生的电网中容性电流随之增大。传统的接地方式中,中性点不接地运行已经不能保证配电网供电的稳定性。而在中性点经过消弧线圈接地方式运行时,可以很好地补偿电网中发生短路接地时的容性电流。该文通过分析中性点经消弧线圈接地的基本原理及中性点经消弧线圈并电阻、串电阻接地的优缺点,提出一种中性点经可控消弧线圈并电阻接地运行的方式并论证此方式的可行性。     

消弧线圈的选型和应用

本文就我国目次采用的几种消弧线圈进行比较,分析了老式消弧线圈接地补偿装置存在的问题,介绍三种类型的自动补偿消弧线圈.     

试析变电站设计中的接地变、消弧线圈与自动补偿技术

本文对电流超标带来的危害进行了分析,结合传统消弧线圈的问题,我们提出消弧线圈的自动跟踪与补充技术,以及就消弧线圈的自动化补偿技术的特征作了阐述.     

调容式消弧线圈补偿装置设计中DSP的分析

笔者对自动调谐消弧线圈的发展现状及存在的问题进行了研究和分析,针对2.2kV·A/220V的调容式消弧线圈及其2kvar的电容调节柜,设计了基于TMS320F2812控制可控硅投切电容器的调容式消弧线圈,并阐明了其工作原理以及硬件和软件设计方案。     

基于交流偏磁的消弧线圈特性研究

偏磁式消弧线圈是一种随动式消弧线圈,具有可靠性高、调节速度快、调节范围宽且可在承受高电压时调节电感值的特点,是一种很有发展前途的消弧电抗器.本文在直流偏磁式消弧线圈理论的基础上提出了基于交流偏磁的全新理论,推导了交流偏磁式消弧线圈的磁通关系,通过仿真和实际的模型分析了这种消弧线圈的特性并得到了一些有用的结论,为以后交流偏磁式消弧线圈的设计和应用提供了参考.     

一起35kV中性点侧消弧线圈异常情况分析

主要针对某站一起35k V中性点侧消弧线圈异常情况进行了分析,深入分析了相关消弧线圈自动装置的动作情况,并对消弧线圈装置的判据提出了可行性的完善建议和方法。通过实践证明,该方法是可行而有效的。     

TSC/TCR式消弧线圈的晶闸管控制电路分析

晶闸管控制电路是消弧线圈实现精确补偿的硬件基础,本文通过对TSC/TCR式消弧线圈的晶闸管控制电路设计的分析,实现对消弧线圈二次侧投入电容量与电感量的控制。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.