Enhanced thermoelectric properties of Mg2Si0.58Sn0.42 compounds by Bi doping

N-type Mg₂Si_0.58Sn_0.42 − xBi_x (0 ≤ x ≤ 0.015) compounds were prepared by melting the element metals in sealed tantalum tubes followed by hot pressing. The XRD results indicate that all samples are composites containing both major magnesium silicide solution phase and minor magnesium stannide solution phase. The Hall measurements show that the carrier concentrations and electrical conductivities increase with the increase of Bi doping amount. It was found that the intrinsic excitation shifts to high temperature due to Bi doping, which leads to the increase of the peak-temperatures of the Seebeck coefficient. The maximum dimensionless figure of merit is 0.65 at 700 K for the sample x = 0.015.     

La and Ca co-doped ceria-based electrolyte materials for IT-SOFCs

Co-doped ceria-based electrolytes of Ce_1−xLa_x−yCa_yO_2−δ, wherein x = 0.15 and 0.20, 0 ≤ y ≤ x, were sintered from powders obtained by solid state reaction method. The phase identification, thermal expansion and ionic conductivities of samples were studied by X-ray diffraction (XRD), dilatometry and AC impedance spectroscopy (IS). Results showed that the samples of co-doping with La and Ca can significantly increase the ionic conductivity and lower activation energies compared with those of the singly doped ones in the temperature range of 500-800 °C. The ionic conductivities of co-doping samples decrease with Ca content. Although both systems reached the optimum ionic conductivity at y = 0.05, Ce_0.85La_0.15−yCa_yO_2−δ exhibits better electrical performance. The results also showed that all the synthesized samples were fluorite-type ceria-based solid solutions. The thermal expansion was linear for all the samples.     

Electrical conductivity and oxygen sensing behavior of SrFe0.2−xTi0.8CoxO3−δ (x = 0.05-0.2)

SrFe_0.2−xTi_0.8Co_xO_3−δ (x = 0.05-0.2) were prepared by solid-state reaction method. Phase characterization and lattice parameter evaluation were done by X-ray diffraction studies. Relative concentrations of iron in various oxidation states in these compositions were estimated using Mossbauer spectroscopy. Electrical conductivities of these bulk samples were measured in various ambient and temperatures using AC impedance spectroscopy. SrFe_0.15Ti_0.8Co_0.05O_3−δ and SrTi_0.8Co_0.2O_3−δ have been found to exhibit good change in electrical conductivity between 21% O₂ and 10 ppm O₂ in argon.     

Electrical properties of polycrystalline GaInAs thin films

Polycrystalline Ga_xIn_1 − xAs films with x ranging from 0 to 1 were deposited on glass substrates by molecular-beam deposition at 240 or 350 °C. Room temperature Hall-effect measurements showed that the Ga_xIn_1 − xAs films deposited at either temperature exhibit high electron concentrations in the range of 10¹⁸ cm^− 3 for x ≤ 0.21 while the electron concentration decreases with increasing Ga content for x ≥ 0.29 to be < 10¹⁵ cm^− 3 at x = 0.64. Even at the low deposition temperature of 240 °C, the electron mobility remains > 400 cm²/(V s) at x ~ 0.2 and then decreases with Ga content to be ~ 40 cm²/(V s) at x = 0.64. Temperature-varying Hall-effect measurements in the range of 100-390 K revealed that both the electron concentration and mobility of the samples with x ≤ 0.21 are almost independent of the measurement temperature, while those of the samples with x ≥ 0.30 decrease with decreasing measurement temperature. The concentrations and ionization energies of donor levels were deduced from the temperature dependence of the electron concentration with the non-parabolicity of the conduction band taken into account. The temperature dependences of electron mobility in the samples with x ≥ 0.30 are well explained in terms of thermionic electron emission across the grain-boundary barriers assuming fluctuation in potential barrier height, while the almost temperature-independent high electron mobilities in the samples with x ≤ 0.21 are attributed to the absence of potential barrier at the grain boundaries.     

Order-disorder phase transitions and high-temperature oxide ion conductivity of Er2+xTi2−xO7−δ (x = 0, 0.096)

The Er_2+xTi_2−xO_7−δ (x = 0.096; 35.5 mol% Er₂O₃) solid solution and the stoichiometric pyrochlore-structured compound Er₂Ti₂O₇ (x = 0; 33.3 mol% Er₂O₃) are characterized by X-ray diffraction (phase analysis and Rietveld method), thermal analysis and optical spectroscopy. Both oxides were synthesized by thermal sintering of co-precipitated powders. The synthesis study was performed in the temperature range 650-1690 °C. The amorphous phase exists below 700 °C. The crystallization of the ordered pyrochlore phase (P) in the range 800-1000 °C is accompanied by oxygen release. The ordered pyrochlore phase (P) exists in the range 1000−1200 °C. Heat-treatment at T ≥ 1600 °C leads to the formation of an oxide ion-conducting phase with a distorted pyrochlore structure (P2) and an ionic conductivity of about 10⁻³ S/cm at 740 °C. Complex impedance spectra are used to separately assess the bulk and grain-boundary conductivity of the samples. At 700 °C and oxygen pressures above 10⁻¹⁰ Pa, the Er_2+xTi_2−xO_7−δ (x = 0, 0.096) samples are purely ionic conductors.     

Sol–gel preparation and characterization of non-substituted and Sr-substituted gadolinium cobaltates

An aqueous sol–gel chemistry approach for the preparation of Sr-substituted perovskite gadolinium cobaltates Gd_1−xSr_xCoO_3−δ (x = 0.0, 0.25, 0.5 and 0.75) has been applied. The metal ions, generated by dissolving starting materials in diluted acetic acid were complexed by EDTA to obtain the precursors for non-substituted and Sr-substituted GdCoO₃. However, only two single-phase cobaltate samples with x = 0.0 and 0.25 have been obtained by the suggested sol–gel method. The influences of synthesis temperature and the amount of substituent on the phase purity of Gd_1−xSr_xCoO_3−δ were investigated. The evolution of the gels during heating, composition and micro-structural features in the polycrystalline samples was studied by thermal analysis (TG/DSC), infrared spectroscopy (IR), powder X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM).     

Structural and electrical properties of Ce0.75(Gd0.95−xSrxCa0.05)0.25O2−δ thick film electrolyte

The effects of Sr doping on the electrical properties of Ce_0.75(Gd_0.95−xSr_xCa_0.05)_0.25O_2−δ (x = 0, 0.01, 0.02, 0.03, 0.04, 0.05 mol%) electrolytes thick films were investigated. The samples sintered at 1400 °C for 8 h. X-ray diffraction (XRD) showed typical XRD patterns of a cubic fluorite structure, and the ionic conductivity was examined by AC impedance spectroscopy. From the experimental results, it was observed that Ce_0.75(Gd_0.95−xSr_xCa_0.05)_0.25O_2−δ (x = 0.04 mol%) electrolytes thick film have higher conductivity and minimum activation energy at 600 °C. This is explained in terms of the increased in the oxygen vacancy concentration at the grain boundary.     

Study of the structural and optical properties of GaPN thin films grown by magnetron RF sputtering

GaP_1−xN_x thin films were deposited on glass substrates by RF sputtering employing a nitrogen-argon atmosphere in a partial pressure of 2×10⁻² Torr. We varied the growth temperature in the range 420-520 °C. The film's optical properties were studied by transmittance and absorbance spectroscopy. Characterization by scanning electron microscopy in cross-sectional view, atomic force microscopy, and X-ray diffraction was performed to determinate the film thickness, surface morphology, and crystal structure, respectively. Raman spectroscopy was employed to analyze the structural properties of samples. The GaP_1−xN_x films presented a cubic polycrystalline structure with a preferential orientation along the [1 1 1] direction. By varying the growth conditions we were able to change the band gap energy between 1.35 and 1.98 eV.     

Spectroscopic evaluation of the structural and compositional properties of GaNxAs1−x superlattices grown by molecular beam epitaxy

GaN_xAs_1−x multiple-quantum-well (MQW) samples (x ≤ 0.025) grown by molecular beam epitaxy have been studied by photoluminescence (PL) spectroscopy, high-resolution X-ray diffraction (HR-XRD), secondary-ion mass spectrometry (SIMS) and ultra-high-resolution infrared local-vibrational-mode (IR LVM) spectroscopy in order to determine their compositional and structural properties. Compositional data from PL spectroscopy and HR-XRD, derived using simple models of the superlattice structure, show good agreement. SIMS depth profiles show that the wells are triangular, and are wider and shallower than predicted, with nitrogen present in the barrier layers. A comparison between SIMS and HR-XRD suggests the presence of interstitial nitrogen for samples with the highest nominal concentrations. By contrast, IR LVM measurements demonstrate that substitutional nitrogen incorporates linearly with increasing nitrogen fraction.     

Fabrication of hydrophobic/super-hydrophobic nanofilms on magnesium alloys by polymer plating

Hydrophobic/super-hydrophobic nanofilms with improved corrosion resistance were fabricated on the surfaces of Mg-Mn-Ce magnesium alloy by a surface modification technique, named as polymer plating, which has been developed to modify superficial characteristics of magnesium alloys with polymeric nanofilms through synthesized organic compounds of triazine dithiol containing functional groups. The nanofilms were prepared by the electrochemical and polymerization reactions during polymer plating analyzed from characteristics of Fourier transform infrared spectrophotometer, X-ray photoelectron spectroscopy and scanning electron microscopy. The fabricated nanofilms changed the surface wettability of blank magnesium alloy from hydrophilic to hydrophobic with contact angle 119.0° of distilled water with lower surface free energy of 20.59 mJ/m² and even super-hydrophobic with contact angle 158.3° with lowest surface free energy of 4.68 mJ/m² by different functional nanofilms on their surfaces. Alteration of wettability from hydrophilic to hydrophobic and super-hydrophobic resulted from their low surface free energy and surface morphology with micro- and nano-rough structures. The corrosion behaviors from potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) show that the super-hydrophobic nanofilm has higher corrosion resistance and stability in 0.1 mol/L NaCl solution and lower corrosion current density (I_corr) with R_ct increasing two orders of magnitude of 16,500 Ω·cm² compared to that obtained for blank of 485 Ω·cm².     

Microstructural characterization of terbium-doped ceria

The microstructures of Ce_1−xTb_xO_2−δ (0.10 ≤ x ≤ 0.50) sintered samples were studied systematically using transmission electron microscopy. The sintered samples consist of not only fluorite-structured matrix but also nano-sized precipitates. Correspondingly, diffuse scattering and extra reflections related to the precipitates were observed in the selected area diffraction patterns. The composition of the precipitates was studied quantitatively by electron energy-loss spectroscopy, indicating that the precipitates have higher Tb concentration than that of the matrix. Furthermore, Tb³⁺ and Ce³⁺ cations were observed to segregate in the precipitates.     

A structural and corrosion study of triethoxysilyl and perfluorooctyl functionalized polyhedral silsesquioxane nanocomposite films on AA 2024 alloy

A tri-functional polyhedral oligomeric silsesquioxane (POSS) based silane precursor R_xR_yR_z(SiO_3/2)_n (x + y + z = n = 6, 8, 10, ….) bearing 3-(N-(3-triethoxysilylpropyl)ureido)propyl, isooctyl and perfluoropropyl groups was synthesized and investigated as corrosion protective coating for AA 2024 alloy. Infrared reflection-absorption (IR RA) combined with X-ray photoelectron spectroscopy and atomic force microscopy provided information about partial self-assembling of coatings having a fluorine enriched upper layer with a low surface energy (γ^tot = 12.37 mN/m). The structural changes that accompanied corrosion produced under chronocoulometrical conditions were assessed from ex-situ IR RA spectra. A new band at 1690-1700 cm^− 1 appeared above the corrosion potential, and was assigned to the formation of amidonium ions and consequent relaxation of urea-urea associations.     

Synthesis and characterization of Ni1−xZnxFe2O4 spinel ferrites from tailored layered double hydroxide precursors

In this paper, a series of pure Ni_1 − xZn_xFe₂O₄ (0 ≤ x ≤ 1) spinel ferrites have been synthesized successfully using a novel route through calcination of tailored hydrotalcite-like layered double hydroxide molecular precursors of the type [(Ni + Zn)_{1 − x − y}Fe_y²⁺Fe_x³⁺(OH)₂]^x+(SO₄²⁻)_x/2·mH₂O at 900 °C for 2 h, in which the molar ratio of (Ni²⁺ + Zn²⁺)/(Fe²⁺ + Fe³⁺) was adjusted to the same value as that in single spinel ferrite itself. The physico-chemical characteristics of the LDHs and their resulting calcined products were investigated by powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Mössbauer spectroscopy. The results indicate that calcination of the as-synthesized LDH precursor affords a pure single Ni_1 − xZn_xFe₂O₄ (0 ≤ x ≤ 1) spinel ferrite phase. Moreover, formation of pure ferrites starting from LDHs precursors requires a much lower temperature and shorter time, leading to a lower chance of side-reactions occurring, because all metal cations on the brucite-like layers of LDHs can be uniformly distributed at an atomic level.     

Synthesis and characterization of nanocrystalline CdZnO thin films prepared by sol-gel dip-coating process

Nanocrystalline Cd_xZn_1 − xO thin films with different Cd volume ratios in solution (x = 0, 0.25, 0.50, 0.75 and 1) have been deposited on glass substrate by sol-gel dip-coating method. The as-deposited films were subjected to drying and annealing temperatures of 275 °C and 450 °C in air, respectively. The prepared films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, UV-vis spectroscopy and dc-electrical measurements. The results show that the samples are polycrystalline and the crystallinity of the films enhanced with x. The average grain size is in the range of 20-53 nm. The atomic percent of Cd:Zn was found to be 9.50:1.04, 6.20:3.77 and 4.42:6.61 for x = 0.75, 0.50 and 0.25, respectively. It was observed that the transmittance and the band gap decreased as x increased. All the films exhibit n-type electrical conductivity. The resistivity (ρ) and mobility (μ) are in the range of 3.3 × 10² − 3.4 × 10^− 3 Ω cm, and 1.5 − 45 cm² V^− 1 s^− 1 respectively. The electron density lies between 1.26 × 10¹⁶ and 0.2 × 10²⁰ cm^− 3.     

Structural and transport properties of stoichiometric Mn-doped magnetite: Fe3−xMnxO4

The polycrystalline samples of Fe_3−xMn_xO₄ (0.10 ≤ x ≤ 0.50) were prepared by a solid-state route reaction method. X-ray diffraction pattern shows that Mn²⁺ doped magnetites are in single phase and possess cubic inverse spinel structure. The resistivity measurements (10 < T < 300 K) for x = 0.0 and 0.01 confirms the first order phase transition at the Verwey transition T_V = 123 K and 117 K, respectively. No first order phase transition was evidenced for Fe_3−xMn_xO₄ (0.10 ≤ x ≤ 0.50). Small polaron model has been used to fit the semiconducting resistivity behavior and the activation energy ?_a, for samples x = 0.10 and 0.50 is about 72.41 meV and 77.39 meV, respectively. The Raman spectra of Fe_3−xMn_xO₄ at room temperature reveal five phonons modes for Fe_3−xMn_xO₄ (0.01 ≤ x ≤ 0.50) as expected for the magnetite (Fe₃O₄). Increased Mn²⁺ doping at Fe site leads to a gradual changes in phonon modes. The Raman active mode for Fe_3−xMn_xO₄ (x = 0.50) at ≅641.5 cm⁻¹ is shifted as compared to parent Fe₃O₄ at ≅669.7 cm⁻¹, inferring that Mn⁺² ions are located mostly on the octahedral sites. The laser power is fixed to 5 mW causes the bands to broaden and to undergo a small shift to lower wave numbers as well as increase in the full width half maxima for A_1g phonon mode with the enhancement of Mn²⁺ doping. Mössbauer spectroscopy probes the site preference of the substitutions and their effect on the hyperfine magnetic fields confirms that Mn⁺² ions are located mostly on the octahedral sites of the Fe_3−xMn_xO₄ spinel structure.     

Optical properties of CdxZn(1−x)O films deposited by ultrasonic spray pyrolysis method

Cd_xZn_(1−x)O (x = 0, 0.59, 0.78 and 1) films have been produced by ultrasonic spray pyrolysis technique using aqueous solutions of CdCl₂ H₂O and ZnCl₂ on the microscope glass substrate between 325 and 400 °C. The Cd_xZn_(1−x)O samples have been crystallized both cubic and hexagonal structures. The optical properties of the samples were characterized by transmittance and absorption spectroscopy measurements. Transmissions of the samples have decreased with increasing x values. The optical band gap energies of the Cd_xZn_(1−x)O samples from the absorption spectra have been calculated between 2.48 and 3.23 eV by different Zn contents. The samples were annealed at 350 and 450 °C. The optical band gap energy has decreased at 350 °C whereas it increased at 450 °C.     

Study on the optical properties of Zn1−xMgxS (0 ≤ x ≤ 0.55) quantum dots prepared by precipitation method

Zn_1−xMg_xS (0 ≤ x ≤ 0.55) quantum dots (QDs) were successfully synthesized by precipitation method. The crystal structures, microstructures, and optical properties of the Zn_1−xMg_xS QDs were investigated using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible and photoluminescence (PL) spectroscopy. The Zn_1−xMg_xS QDs were found to have a cubic crystal structure and an average crystallite size of 6.40-7.96 nm. It has been shown that an increase in doping Mg²⁺ concentration in Zn_1−xMg_xS QDs led to a gradual widening of the band gap and a weakening in the PL intensity of the Zn_1−xMg_xS QDs.     

Significance of Al on the morphological and optical properties of Ti1−xAlxN thin films

TiN and Ti_1−xAl_xN thin films with different aluminum concentrations (x = 0.35, 0.40, 0.55, 0.64 and 0.81) were synthesized by reactive magnetron co-sputtering technique. The structure, surface morphology and optical properties were examined using Grazing Incidence X-ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Raman spectroscopy and spectroscopic ellipsometry, respectively. The structure of the films were found to be of rocksalt type (NaCl) for x = 0.0–0.64 and X-ray amorphous for x = 0.81. AFM topographies show continuous mound like structure for the films of x between 0.0 and 0.64, whereas the film with x = 0.81 showed smooth surface with fine grains. Micro-Raman spectroscopic studies indicate structural phase separation of AlN from TiAlN matrix for x > 0.40. Ti_1−xAl_xN has the tendency for decomposition with the increase of Al concentration whereas c-TiN and hcp-AlN are stable mostly. The optical studies carried out by spectroscopic ellipsometry measurements showed a change from metallic to insulating behavior with the increase in x. These films are found to be an insulator beyond x = 0.81.     

Effect of micro-alloying chromium on the corrosion resistance of nanocrystalline nickel aluminide intermetallic produced by mechanical alloying process

In this study, Ni₅₀Al_50 − xCr_x nanocrystalline intermetallic compound was synthesized by using the high energy mechanical milling of pure Ni, Al and Cr elemental powders for 16 h. The morphological investigation was done by using the optical and scanning electron microscope. The corrosion behavior of the samples was studied by using the electrochemical impedance spectroscopy in 3.5% NaCl solution. The results showed that when the micro-alloying Cr content is increased, the particles distribution is modified and the size of particles is decreased. Therefore the passive film which is formed on the surface of samples is less porous, so the corrosion resistance is increased.     

Surface science studies of Cu containing back contacts for CdTe solar cells

The electronic interface properties of Cu_2 − xTe with CdTe have been investigated using in-situ photoelectron spectroscopy (XPS, UPS) in comparison to CdTe/Cu and CdTe/Te interfaces. A band bending towards the Fermi level as a result of the p-doping can be seen in the CdTe by depositing Cu_2 − xTe. Different Cu_2 − xTe films were prepared by varying the deposition parameters such as substrate temperature and deposition rate of the Cu and Te sources. For all Cu_2 − xTe/CdTe interfaces a valence band offset of 0.8 ± 0.05 eV has been found.