Luminescent properties of Gd2Ti2O7: Eu phosphor films prepared by sol-gel process

Gd₂Ti₂O₇: Eu³⁺ thin film phosphors were fabricated by a sol-gel process. X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 800 °C and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. The doped Eu³⁺ showed orange-red emission in crystalline Gd₂Ti₂O₇ phosphor films due to an energy transfer from Gd₂Ti₂O₇ host to them. Both the lifetimes and PL intensity of the Eu³⁺ increased with increasing the annealing temperature from 800 to 1000 °C, and the optimum concentrations for Eu³⁺ were determined to be 9 at.%. of Gd³⁺ in Gd₂Ti₂O₇ film host.     

Synthesis of CaAl2O4:Eu,Nd long persistent phosphor by combustion processes and its optical properties

Eu²⁺,Nd³⁺ co-doped calcium aluminate with high brightness and long persistent luminescence was prepared by the combustion method. The luminescent properties of CaAl₂O₄-based luminescent materials have been studied systematically. The phosphor powders were further investigated by X-ray diffractometer (XRD), photoluminescence excitation and emission spectra (PL) and brightness meter. The analytical results indicated that the phase of CaAl₂O₄ was formed when the initiating combustion temperature was 400 °C. The broad band UV excited luminescence of the CaAl₂O₄:Eu²⁺,Nd³⁺ was observed at the blue region (λ_max = 440 nm) due to transitions from the 4f⁶5d¹ to the 4f⁷ configuration of the Eu²⁺ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration.     

Vacuum ultraviolet excited photoluminescence properties of novel Na3Y9O3(BO3)8:Eu phosphor

The novel vacuum ultraviolet (VUV) excited Na₃Y₉O₃(BO₃)₈:Eu³⁺ red phosphor was synthesized and the photoluminescence (PL) properties were investigated. The phosphor showed strong VUV PL intensity, large quenching concentration (40 mol%) and good chromaticity (0.649, 0.351). The Eu³⁺-O²⁻ charge transition (CT) was observed to be at a higher energy (232 nm, 5.35 eV). The host absorption at 127-166 nm was broad and strong when monitoring the Eu³⁺ emission, which indicated that energy transfer from the host-lattice to the Eu³⁺ ions was efficient in Na₃Y₉O₃(BO₃)₈:Eu³⁺. These excellent VUV PL properties were revealed to be correlated with the unique isolated layer-type structure of Na₃Y₉O₃(BO₃)₈ host. The results showed that the Na₃Y₉O₃(BO₃)₈:Eu³⁺ would be a good candidate for VUV-excited red phosphor.     

Photoluminescence of Eu activated YAlO3 under UV-VUV excitation

YAlO₃ and YAlO₃:Eu³⁺ powder phosphors were prepared by the citric-gel method, and the formation of purified crystalline phases of YAlO₃ and YAlO₃:Eu³⁺ was dependent on the pH value of the starting solution. The powders prepared with pH 3 yielded a single phase YAlO₃ after calcinations at 1000 °C. The spectroscopic properties in UV-vacuum ultraviolet (VUV) range for the orthorhombic structure phosphors YAlO₃:Eu³⁺ were investigated. The broad band centered at 240 nm was assigned to the charge transfer transition between Eu³⁺ and the neighboring oxygen anions. The other broad band from 120 nm to 160 nm was attributed to the host absorption, which ensures the efficient absorption of the Xe plasma emission lines. The photoluminescent spectra showed the strongest emission at 614 nm corresponding to the electric dipole ⁵D₀ → ⁷F₂ transition of Eu³⁺, which resulted in good color purity for display and lamps applications.     

Dependence of photoluminescence (PL) emission intensity on Eu and ZnO concentrations in Y2O3:Eu and ZnO·Y2O3:Eu nanophosphors

Y₂O₃:Eu³⁺ and ZnO·Y₂O₃:Eu³⁺ nanophosphor powders with different concentrations of Eu³⁺ ions were synthesized by a sol-gel method and their luminescence properties were investigated. The red photoluminescence (PL) from Eu³⁺ ions with the main emission peak at 612 nm was observed to increase with Eu³⁺ concentration from 0.25 to 0.75 mol% and decreased notably when the concentration was increased to 1 mol%. The decrease in the PL intensity at higher Eu³⁺ concentrations can be associated with concentration quenching effects. The red emission at 612 nm was shown to increase considerable when ZnO nanoparticles were incorporated in Y₂O₃:Eu³⁺ while green emission from ZnO was suppressed. The increase is attributed to energy transfer from ZnO to Eu³⁺.     

Cathodoluminescence of CaWO4 and SrWO4 thin films prepared by spray pyrolysis

Thin films of CaWO₄ and SrWO₄ were prepared on glass substrates by spray pyrolysis. The effects of preparation conditions and monovalent, bivalent and trivalent cation doping on cathodoluminescence (CL) properties of the films were studied. Polycrystalline CaWO₄ and SrWO₄ films formed a scheelite structure after being annealed above 300°C. They exhibited analogous cathodoluminescence consisting of a blue emission band at 447 nm and a blue-green emission band at 487 nm. The blue and blue-green emission intensities increased with substrate and annealing temperature. Annealing atmosphere and doping with Ag⁺, Pb²⁺ and La³⁺ did not influence the characteristics of the blue and blue-green emissions, whereas Eu³⁺ did. The results indicated both the blue and blue-green emissions originated from the WO₄²⁻ molecular complex. The luminance and efficiency for CaWO₄ film were 150 cd/m² and 0.7 lm/W at 5 kV and 57 μA/cm².     

Sr3.5Mg0.5Si3O8Cl4: Eu bluish-green-emitting phosphor for NUV-based LED

Sr₄Si₃O₈Cl₄:Eu²⁺ and Sr_3.5Mg_0.5Si₃O₈Cl₄:Eu²⁺ phosphors were prepared by a conventional solid state reaction (SS). Excited by 370 nm near-ultraviolet light, the phosphors show an efficient bluish-green wide-band emission centering at 484 nm, which originates from the 4f5d¹ → 4f⁷ transition of Eu²⁺ ion. The excitation spectra of the phosphors are a broad band extending from 250 nm to 400 nm. Mg²⁺-codoping greatly enhances the bluish-green emission of the phosphors. An LED was fabricated by coating the Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ phosphor onto an ~ 370 nm-emitting InGaN chip. The LED exhibits bright bluish-green emission under a forward bias of 20 mA. The results indicate that Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ is a candidate as a bluish-green component for fabrication of NUV-based white LEDs.     

Growth and photoluminescence of (00l)-oriented RMoO4 films by chemical solution deposition

RMoO₄ (RMO, R = Ca, Sr, Ba) films were fabricated on LaAlO₃ (LAO) substrates using chemical solution deposition method. The derived RMO films are highly (00l)-orientated with good crystallization. The photoluminescence (PL) emission spectra show that the CaMoO₄ (CMO) and SrMoO₄ (SMO) films have an intrinsic broad green emission band centered at 500 nm whereas BaMoO₄ (BMO) film has a broad orange emission band resulting from the PL of molybdate group with an oxygen ion deficiency. The highly (00l)-oriented CMO film on LAO has better PL property than that of CMO film on Si substrate, which is ascribed to higher crystalline integrity and lower light scattering.     

Novel blue-emitting Sr3Ga2O5Cl2:Eu phosphor for UV-pumped white LEDs

A novel blue-emitting Sr₃Ga₂O₅Cl₂:Eu²⁺ phosphor has been synthesized by a two-step solid-state reaction. The luminescence properties have been investigated by photoluminescence (PL) spectra, and temperature-dependent PL spectra. It shows an efficient broad absorption band around 400 nm, which matches well with the commercial near-ultraviolet light-emitting chips, and an efficient blue emission. It shows a higher thermal quenching temperature than that of Sr₃Al₂O₅Cl₂:Eu²⁺ phosphor. Sr₃Ga₂O₅Cl₂:Eu²⁺ phosphor is a promising blue-emitting component for UV chip excited white light-emitting-diodes.     

Luminescent properties of Na3YSi3O9 doped with Eu under UV-VUV excitation

The luminescent properties of Na₃Y_1−xSi₃O₉:xEu³⁺ (0.05 ≦ x ≦ 0.80) powder crystals were investigated in UV-VUV region. The Eu³⁺-O²⁻ charge transfer band (CTB) was observed to be located at around 233 nm and the environmental parameter (h_e) was estimated to be about 0.730. The excitation spectrum monitoring the 613 nm red emission from Eu³⁺ ions reveals the host absorption band (HAB) to be around 145 nm. The calculated Commission Internationale de l’Eclairage (CIE) chromaticity coordinates indicate the emission by 233 nm rather than by 147 nm excitation has the better color purity and the possible mechanisms have been proposed. The Eu³⁺-emission showed high quenching concentration due to the isolated YO₆ octahedra in the host and the small h_e for the Eu³⁺ ions and the optimum concentration was determined to be as high as x = 0.65 and 0.30 with 233 and 147 nm excitation, respectively.     

Synthesis and photoluminescence properties of new NaAlSiO4:Eu phosphors for near-UV white LED applications

A new NaAlSiO₄:0.1Eu²⁺ phosphors were synthesized at different temperatures using a liquid phase precursor (LPP) technique. The XRD patterns indicate the presence of hexagonal nepheline phase for all the samples. The synthesized phosphors can be excited efficiently in the broad near-UV region. The PL emission spectra showed a broad emission peak at around 551 nm corresponding to 5d → 4f transition of Eu²⁺ ions. The synthesized phosphors showed better thermal stability when compared with the standard YAG:Ce³⁺ phosphor.     

Photoluminescence properties of NaGd(MoO4)2:Eu nanophosphors prepared by sol-gel method

NaGd(MoO₄)₂:Eu³⁺ (hereafter NGM:Eu) phosphors have been prepared by sol-gel method. The properties of the resulting phosphors are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) spectra and decay curve. The excitation spectra of NGM:Eu phosphors are mainly attributed to O → Mo charge-transfer (CT) band at about 282 nm and some sharp lines of Eu³⁺ f-f transitions in near-UV and visible regions with two strong peaks at 395 and 465 nm, respectively. Under the 395 and 465 nm excitation, intense red emission peaked at 616 nm corresponding to ⁵D₀ → ⁷F₂ transition of Eu³⁺ are observed for 35 at.% NGM:Eu phosphors as the optimal doping concentration. The luminescence properties suggest that NGM:Eu phosphor may be regarded as a potential red phosphor candidate for near-UV and blue light-emitting diodes (LEDs).     

Crystallinity and surface roughness dependent photoluminescence of Y1 − xGdxVO4:Eu thin films grown on Si (100) substrate

Gd-substitution dependency on the photoluminescence in YVO₄:Eu³⁺ films grown on Si (100) substrates have been investigated by analyzing the crystalline phase and surface morphology of the films. The substitution of Gd induced not only the change of crystallinity but also the surface roughness of the films. The change of the preferred orientation in the films can be explained on the basis of the lattice mismatch between the film and Si (100) substrate. Also, the surface roughness of the films shows the similar behavior to the grain size as a function of Gd amounts. The photoluminescence (PL) intensity obtained from the Y_1 − xGd_xVO₄:Eu³⁺ films grown under optimized conditions have indicated that the PL intensity is more dependent on the surface roughness than the crystallinity of films. In particular, the incorporation of Gd into the YVO₄ lattice remarkably enhanced the intensity of PL and the highest emission intensity of Y_0.57Gd_0.40Eu_0.03VO₄ film was 3.3 times higher than that of YVO₄:Eu³⁺ film.     

Electronic structure and photoluminescence properties of Eu-activated Ca4Si2O7F2

The blue-emitting phosphors Ca_(4−x)Eu_xSi₂O₇F₂ (0 < x ? 0.05) have been prepared by solid-state reaction and the photoluminescence properties have been studied systematically. The electronic structure of calcium fluoride silicate Ca₄Si₂O₇F₂ was calculated using the CASTEP code. The calculation results of electronic structure show that Ca₄Si₂O₇F₂ has an indirect band gap with 5 eV. The top of the valence band is dominated by O 2p and Si 3p states, while the bottom of the conduction band is mainly composed of Ca 3d states. Under the 350 nm excitation, the obtained sample shows a broad emission band in the wavelength range of 400-500 nm with peaks of 413 nm and 460 nm from two different luminescence centers, respectively. The relative intensity of the two peaks changes with the alteration of the Eu²⁺ concentration. The strong excitation bands of the powder in the wavelength range of 200-420 nm are favorable properties for the application as lighting-emitting-diode conversion phosphor.     

A yellow-emitting Ca3Si2O7: Eu phosphor for white LEDs

A series of yellow-emitting phosphors based on a silicate host matrix, Ca_3 − xSi₂O₇: xEu²⁺, was prepared by solid-state reaction method. The structure and photoluminescent properties of the phosphors were investigated. The XRD results show that the Eu²⁺ substitution of Ca²⁺ does not change the structure of Ca₃Si₂O₇ host and there is no impurity phase for x < 0.12. The SEM images display that phosphors aggregate obviously and the shape of the phosphor particle is irregular. The EDX results reveal that the phosphors consist of Ca, Si, O, Eu and the concentration of these elements is close to the stoichiometric composition. The Ca_3 − xSi₂O₇: xEu²⁺ phosphors can be excited at a wavelength of 300-490 nm, which is suitable for the emission band of near ultraviolet or blue light-emitting-diode (LED) chips. The phosphors exhibit a broad emission region from 520 to 650 nm and the emission peak centered at 568 nm. In addition, the shape and the position of the emission peak are not influenced by the Eu²⁺ concentration and excitation wavelength. The phosphor for x = 0.045 has the strongest excitation and emission intensity, and the Ca_3 − xSi₂O₇: xEu²⁺ phosphors can be used as candidates for the white LEDs.     

A promising red phosphor MgMoO4:Eu for white light emitting diodes

Motivated by the need for new red phosphors for solid-state lighting applications Eu³⁺-doped MgMoO₄ was prepared by solid-state reaction and its excitation and emission spectra were measured at room temperature. In addition, the effects of firing temperature and Eu³⁺ doping concentration on the PL intensities were also investigated. Compared with Y₂O₂S:0.05Eu³⁺, the obtained Mg_0.80MoO₄:Eu³⁺_0.20 phosphor shows a stronger excitation band near 400 nm and intensely red-emission lines at 616 nm correspond to the forced electric dipole ⁵D₀ → ⁷F₂ transitions on Eu³⁺ under 394 nm light excitation. The CIE chromaticity coordinates (x = 0.651, y = 0.348) of Mg_0.80MoO₄:Eu³⁺_0.20 close to the NTSC (National Television Standard Committee) standard values, and therefore may find application on near UV InGaN chip-based white light emitting diodes.     

Photoluminescence and preparation of ZnNb2O6 doped with Eu and Tm nanocrystals for solar cell

Synthesis and luminescence properties of Eu³⁺ and Tm³⁺-doped ZnNb₂O₆ nanocrystals by the sol–gel process were investigated. The products were characterized by differential thermal analysis (DTA), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). ZnNb₂O₆:Eu³⁺ shows bright red luminescence with maximum peak at 613 nm attributed to ⁵D₀ → ⁷F₂ transition. The major blue emission peak of ZnNb₂O₆:Tm³⁺ was at 483 nm, corresponding to the transitions ¹G₄ → ³H₆. The optimum concentration of Eu³⁺ and Tm³⁺ showing the maximum PL intensity was 4 mol% and 1 mol%, respectively.     

Long afterglow phosphorescent characteristics of BaAl2O4:Eu,Dy films

BaAl₂O₄:Eu,Dy (BAO) films have been fabricated on Si substrate by laser ablation, and their fundamental optical property and afterglow characteristics are discussed in comparison with the SrAl₂O₄:Eu,Dy (SAO) films. The intense green emission near 500 nm that originates from 5d to 4f transition in Eu²⁺ ions was clearly observed from the BAO films. This photoluminescence peak was at a shorter wavelength than that of the SAO films (λ = 520 nm). The afterglow intensity from the BAO films disappeared within a few minutes whereas that of the SAO films lasts over 20 min. The hole-trap depth (E_t) created by Dy as the auxiliary activators, which strongly affects the afterglow characteristics, was estimated on the basis of the thermally stimulated luminescence (TSL) result. The TSL glow curve for BAO films showed two broad peaks at 320 K and 450 K. The calculated E_t for each peak was 0.2 eV (for the 320 K peak) and 1.2 eV (for the 450 K peak). On the other hand, E_t = 0.5 eV was obtained from the SAO films. The hole-trap depths of the BAO film are either too shallow or too deep to affect the afterglow characteristics at room temperature.     

Synthesis and photoluminescence properties of SrLu2O4:Eu superfine phosphor

Superfine powder SrLu₂O₄:Eu³⁺ was synthesized with a precursor prepared by an EDTA - sol-gel method at relatively low temperature using metal nitrate and EDTA as starting materials. The heat decomposition mechanism of the precursor, formation process of SrLu₂O₄:Eu³⁺and the properties of the particles were investigated by thermo-gravimetric (TG) - differential thermal analysis (DTA), X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) analyses. The results show that pure SrLu₂O₄:Eu³⁺ superfine powder has been produced after the precursor was calcinated at 900 °C for 2 h and has an elliptical shape and an average diameter of 80-100 nm. Upon excitation with 250 nm light, all the SrLu₂O₄:Eu³⁺ powders show red and orange emissions due to the 4f-4f transitions of Eu³⁺ ions. The highest photoluminescence intensity at 610 nm was found at a content of about 6 mol% Eu³⁺. Splitting of the ⁵D₀-⁷F₁ emission transition revealed that the Eu³⁺ ions occupied two nonequivalent sites in the crystallite by substituting Lu³⁺ ions.     

Synthesis and optical properties of KCaPO4:Eu phosphor

A series of Eu²⁺ doped KCaPO₄ phosphors were prepared by high temperature solid state reaction and an efficient blue-green emission was observed. The photoluminescence (PL) spectrum of the phosphor appeared one asymmetric peak under near-ultraviolet (n-UV) excitation and two emission bands at 480 nm and 540 nm were obtained using Gaussian fit, which was because Eu²⁺ ions inhabited two different Ca²⁺ sites: Eu(I) and Eu(II) in the host lattice, respectively. The excitation spectrum was a broadband extending from 250 to 450 nm, which matched well with the emission of ultraviolet light-emitting diodes (UV LEDs). The effect of Eu²⁺ concentration on the emission intensity of KCaPO₄:Eu²⁺ phosphor was investigated in detail.