Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Leakage current characteristics of Bi3.15Nd0.85Ti3 − xZrxO12 thin films

Thin films of Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) and Bi_3.15Nd_0.85Ti_3 − xZr_xO₁₂ (BNTZ_x, x = 0.1 and 0.2) were fabricated on Pt/TiO₂/SiO₂/Si(100) substrates by a chemical solution deposition (CSD) technique at 700 °C. Structures, surface morphologies, leakage current characteristics and Curie temperature of the films were studied as a function of Zr ion content by X-ray diffraction, atomic force microscopy, ferroelectric test system and thermal analysis, respectively. Experimental results indicate that Zr ion substitution in the BNT film markedly decreases the leakage current of the film, while almost not changing the Curie temperature of the film, which is at about 420-460 °C. The decrease of the leakage current in BNTZ_x films is that the conduction by the electron hopping between Ti⁴⁺ and Ti³⁺ ions is depressed because Zr⁴⁺ ions can block the path between two adjacent Ti ions and enlarge hopping distance.     

Order-disorder phase transitions and high-temperature oxide ion conductivity of Er2+xTi2−xO7−δ (x = 0, 0.096)

The Er_2+xTi_2−xO_7−δ (x = 0.096; 35.5 mol% Er₂O₃) solid solution and the stoichiometric pyrochlore-structured compound Er₂Ti₂O₇ (x = 0; 33.3 mol% Er₂O₃) are characterized by X-ray diffraction (phase analysis and Rietveld method), thermal analysis and optical spectroscopy. Both oxides were synthesized by thermal sintering of co-precipitated powders. The synthesis study was performed in the temperature range 650-1690 °C. The amorphous phase exists below 700 °C. The crystallization of the ordered pyrochlore phase (P) in the range 800-1000 °C is accompanied by oxygen release. The ordered pyrochlore phase (P) exists in the range 1000−1200 °C. Heat-treatment at T ≥ 1600 °C leads to the formation of an oxide ion-conducting phase with a distorted pyrochlore structure (P2) and an ionic conductivity of about 10⁻³ S/cm at 740 °C. Complex impedance spectra are used to separately assess the bulk and grain-boundary conductivity of the samples. At 700 °C and oxygen pressures above 10⁻¹⁰ Pa, the Er_2+xTi_2−xO_7−δ (x = 0, 0.096) samples are purely ionic conductors.     

Ohmic contacts and n-type doping on TixCr2 − xO3 films and the temperature dependence of their transport properties

A procedure to dope n-type Cr_2 − xTi_xO₃ thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on Ti_xCr_2 − xO₃ films. It consists on the deposition of 10 nm Ti and 50 nm Au, followed by thermal annealing at 1000 °C for 20 min in N₂ atmosphere. Ohmic contacts were formed on three samples with different composition: x = 0.17, 0.41 and 1.07 in a van der Pauw geometry for Hall effect measurements. These measurements are done between 35 K and 373 K. All samples showed n-type nature, with a charge carrier density (n) on the order of 10²⁰ cm^− 3, decreasing as x increased. As a function of temperature, n shows a minimum around 150 K, while the mobilities have an almost constant value of 11, 28 and 7 cm²V^− 1 s^− 1 for x = 0.17, 0.41 and 1.07, respectively.     

Microfabrication of dilute magnetic semiconducting Ti1−xCoxO2 films using photosensitive sol-gel method

Photosensitive Ti_1−xCo_xO₂ gel films are prepared by chemical modification with benzoylacetone, and then their Fourier transform infrared spectra and ultraviolet visible spectra are measured. Results show that the chelate rings of benzoylacetone with Ti ions are formed in the Ti_1−xCo_xO₂ gel films. With irradiation of UV light, the chelate rings are photolyzed, which leads to a change of the solubility of the Ti_1−xCo_xO₂ gel films in methanol. Based on this, the micro-patterns of Ti_1−xCo_xO₂ gel films are obtained. After the patterned gel films are dried at 200 °C and are fired at 550 °C for 1 h, negative patterned Ti_1−xCo_xO₂ inorganic films are obtained. The Ti_1−xCo_xO₂ films have an anantase structure and exhibit a room temperature ferromagnetic property.     

Microwave dielectric properties of Ba2 − xSrxLa3Ti3NbO15 ceramics

High dielectric constant and low loss ceramics in the system Ba_2 − xSr_xLa₃Ti₃NbO₁₅ (x = 0-1) have been prepared by conventional solid-state ceramic route. Ba_2 − xSr_xLa₃Ti₃NbO₁₅ solid solutions adopted A₅B₄O₁₅ cation-deficient hexagonal perovskite structure for all compositions. The materials were characterized at microwave frequencies. They show a linear variation of dielectric properties with the value of x. Their dielectric constant varies from 48.34 to 43.03, quality factor Q_u × f from 20,291 to 39,088 GHz and temperature variation of resonant frequency from 8 to 1.39 ppm/°C as the value of x increases. These low loss ceramics might be used for dielectric resonator (DR) applications.     

The properties of transparent semiconductor Zn1 − xTixO thin films prepared by the sol-gel method

Transparent semiconductor thin films of Zn_1 − xTi_xO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn_1 − xTi_xO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn_0.88Ti_0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.     

Preparation of Ti1− zNbzN ceramics by spark plasma sintering Ti1− zNbzOxNy nanopowders

Ti_1−zNb_zN ceramics were fabricated by sintering nanocrystalline titanium-niobium oxynitride (Ti_1−zNb_zO_xN_y) powders using spark plasma sintering (SPS) technique at 1060 °C for 3 min in an N₂ atmosphere. The phase composition and microstructure were characterized by XRD, SEM, TEM and EDS. The results showed that Ti_1−zNb_zN ceramics remained the cubic structures of Ti_1−zNb_zO_xN_y powders. There were XRD peak shifts in the cubic phases between Ti_1−zNb_zN ceramics and corresponding Ti_1−zNb_zO_xN_y powders. During the sintering process, oxygen separated from Ti_1−zNb_zO_xN_y to form titanium-niobium oxides. Ti_1−zNb_zN (0 < z < 1) had a more compact structure than TiO_xN_y and NbO_xN_y. Ti_0.5Nb_0.5N ceramic had the biggest grain size in the series of Ti_1−zNb_zN.     

Effect of LaNiO3 electrodes and lead oxide excess on chemical solution deposition derived Pb(Zrx,Ti1 − x)O3 films

The effects of LaNiO₃ (LNO) and Pt electrodes on the properties of Pb(Zr_x,Ti_1 − x)O₃ (PZT) films were compared. Both LNO and PZT were prepared by chemical solution deposition (CSD) methods. Specifically, the microstructure of LNO and its influence on the PZT properties were studied as a function of PbO excess. Conditions to minimize the Pyrochlore phase and porosity were found. Remnant polarization, coercive field and fatigue limit were improved in the PZT/LNO films relative to the PZT/Pt films. Additionally, the PZT crystallization temperature over LNO was 500 °C, about ~ 50 °C lower than over Pt. The crystallization temperature reported here is amongst the lowest values for CSD-based PZT films.     

Oxide-ion conductivity in CuxCe1−xO2−δ (0 ≤ x ≤ 0.10)

Up to 10 at.% of copper readily substitutes for cerium in ceria. It is found that at oxygen partial pressures between 0.21 atm and 10⁻⁵ atm, Cu_xCe_1−xO_2−δ (0 ≤ x ≤ 0.10) solid solution behave as an oxide-ion electrolyte. Interestingly, Cu_0.10Ce_0.90O_2−δ exhibits the oxide-ion conductivity of ca. 10⁻⁴ Ω⁻¹ cm⁻¹ at 600 °C at an oxygen partial pressure of 10⁻⁵ atm.     

Electrical transport and structural study of CuCr1 − xMgxO2 delafossite thin films grown by pulsed laser deposition

The growth and properties of delafossites CuCr_1 − xMg_xO₂ thin films are examined. These films are grown by pulsed laser deposition. As a class of materials delafossites have received recent interest since some members show p-type behavior. While not considered true wide-bandgap materials due to a narrow indirect bandgap that fails to adsorb light due to a forbidden same parity transition, optical transparencies greater than 40% in the visible can be observed. In order to be useful for transparent device applications, CuCr_1 − xMg_xO₂ films are needed with low resistivity and high optical transparency. Epitaxial films of CuCr_1 − xMg_xO₂ were grown on c-sapphire, examining the effects of oxygen pressure and growth temperature on film properties. Films were realized with resistivity of ~ 0.02 Ω-cm and optical transparency of 40% in the visible. The formation of a problematic secondary minority spinel phase of (Cu,Mg)Cr₂O₄ is discussed. While conductivity increases substantially with Mg doping, the incidence of the spinel phase increases as well.     

Microstructure and martensitic transformation of Ti49Ni51 − xHfx high temperature shape memory alloys

In present work, the microstructure and martensitic transformation of Ti₄₉Ni_51 − xHf_x (x = 3-15) alloys were studied. The microstructure of Ti₄₉Ni_51 − xHf_x alloys consists of B19′ martensite and (Ti,Hf)₂Ni phase at room temperature. The martensitic transformation behavior is characterized by a single-stage transformation. With increasing Hf content, the transformation temperature increases from 75 to 279 °C resulting from the reduced valence electron concentration, indicating that the replacement of Hf for Ni is effective in increasing the transformation temperatures. The results suggest that the Ti₄₉Ni_51 − xHf_x shape memory alloy is one of potential candidates for high temperature applications.     

Structural and microwave dielectric behavior of (Li1/4Nb3/4) substituted ZrxSnyTizO4 (x + y + z = 2) system

The phase structure, microwave dielectric properties, and their stability with different annealing conditions have been investigated in (Li_1/4Nb_3/4) substituted Zr_xSn_yTi_zO₄ system. The sintering temperature of Zr_xSn_yTi_zO₄ ceramic was lowered from 1500 to 1140 °C by (Li_1/4Nb_3/4) substitution. Both X-ray diffraction (XRD) analysis and electron diffraction (ED) analysis revealed that the (Li_1/4Nb_3/4) substituted Zr_xSn_yTi_zO₄ ceramic crystallized as the high-temperature disordered ZrTiO₄ phase. As the content of Sn increased from 0.10 to 0.30, the permittivity of the (Zr_1−xSn_x)(Li_1/4Nb_3/4)_0.4Ti_0.6O₄ ceramic decreased gradually from 35.5 to 31.5, the Q_f value increased from 37,800 to 58,300 GHz, and TCF value shifted slightly from −4.5 to −33.0 ppm °C⁻¹. Both the phase structure and microwave dielectric properties of (Zr_1−xSn_x)(Li_1/4Nb_3/4)_0.4Ti_0.6O₄ ceramics were stable with annealing conditions.     

Low temperature (~ 250 °C) layer exchange crystallization of Si1 − xGex (x = 1-0) on insulator for advanced flexible devices

Low-temperature (~ 250 °C) layer exchange crystallization of poly-Si_1 − xGe_x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (~ 250 °C, 20 h) of the a-Si_1 − xGe_x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.     

Structural and optical properties of rock-salt Cd1 − xZnxO thin films prepared by thermal decomposition of electrodeposited Cd1 − xZnxO2

Cd_1 − xZn_xO nanocrystalline thin films with rock-salt structure were obtained through thermal decomposition of Cd_1 − xZn_xO₂ (x = 0, 0.37, 0.57, 1) thin films which were electrodeposited from aqueous solution at room temperature. X-ray diffraction results showed that the Zn ions were incorporated into rock salt-structure of CdO and the crystal lattice parameters decreased with the increase of Zn contents. The bandgaps of the Cd_1 − xZn_xO thin films were obtained from optical transmission and were 2.40, 2.51, 2.63 and 3.25 eV, respectively.     

The effect of AlN buffer layer on properties of AlxIn1 − xN films on glass substrates

Al_xIn_1 − xN (AlInN) films with x = 0.36 and 0.55 were grown on glass substrate by pulsed direct-current reactive sputtering. X-ray photoelectron spectroscopy depth profiles revealed that oxygen diffused from glass substrate to AlInN films at temperatures ≧ 300 °C. After applying AlN buffer layer, the crystallinity of AlInN films was markedly improved without oxygen contamination observed. The AlN-buffered AlInN films are c-axis-oriented with low full-width-at-half-maximum of 2.9°-3.5°, fine-grained, and low electron concentration, which are comparable with AlInN films grown by other high-temperature processes. AlN buffer layer is proved to be good seeding and diffusion-barrier layers for AlInN films deposited on glass substrates.     

Pechini sol-gel deposition and luminescent properties of SrLa1−xRExGa3O7 (RE = Eu, Tb) phosphor films

SrLa_1−xRE_xGa₃O₇ (RE = Eu³⁺, Tb³⁺) phosphor films were deposited on quartz glass substrates by a simple Pechini sol-gel method. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy, field-emission scanning electron microscopy, photoluminescence spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 700 °C and crystallized fully at 900 °C. The results of FT-IR spectra were in agreement with those of XRD. Uniform and crack-free films annealed at 900 °C were obtained with average grain size of 80 nm, root mean square roughness of 46 nm and thickness of 130 nm. The RE ions showed their characteristic emission in crystalline SrLa_1−xRE_xGa₃O₇ films, i.e., Eu³⁺⁵D₀-⁷F_J (J = 0, 1, 2, 3, 4), Tb³⁺⁵D₄-⁷F_J (J = 6, 5, 4, 3) emissions, respectively. The optimum concentrations (x) of Eu³⁺ and Tb³⁺ were determined to be 50, and 80 mol% in SrLa_1−xRE_xGa₃O₇ films, respectively.     

High-frequency magneto-electrical properties of Zn1 − x − yAlxCoyO thin films

The Al doping effects on high-frequency magneto-electric properties of Zn_{1 − x − y}Al_xCo_yO (x = 0-10.65 at.%) thin films were systematically studied. In the current work, the Zn_{1 − x − y}Al_xCo_yO thin films were deposited by magnetron co-sputtering onto quartz substrates. The magneto-impedance spectra of the thin films were measured by an impedance analyzer. Among all the doped films studied, the thin film with 6.03 at.% Al-doping showed the highest ac conductivity and relaxation frequency. To characterize the relaxation mechanism underlying the magneto-electric properties, a Cole-Cole impedance model was applied to analyze the impedance spectra. The analyzed result showed that the magneto-impedance of the Zn_{1 − x − y}Al_xCo_yO is contributed by multiple processes of magnetization dynamics and dielectric relaxation. The results imply that Zn_{1 − x − y}Al_xCo_yO may be applicable for high-frequency magneto-electric devices.     

Effect of GaAs substrate misorientation on InxGa1 − xAs crystalline quality and photovoltaic performance

This paper presents the quality of In_xGa_1 − xAs (0 < x < 0.2) layers grown on GaAs substrate with different miscut angle (2° and 15°) by metal organic chemical vapor deposition. The crystalline quality of In_xGa_1 − xAs layers was found to strongly depend on indium content and substrate misorientation. The In_0.16Ga_0.84As solar cells with PN structure were grown on a 2°- and 15°-off GaAs substrates. It was found that the photovoltaic performance of In_0.16Ga_0.84As solar cell grown on 2°-off GaAs substrate was better than that of In_0.16Ga_0.84As grown on a 15°-off GaAs substrate, because the In_xGa_1 − xAs films grown on 15°-off GaAs substrate shows a highly strain relaxation in active layer of solar cell, which causes the high dislocation density at the initial active layer/In_xGa_1 − xAs graded layer interface.     

Dielectric properties of Ba(Ti1 − xZrx)O3 solid solutions

This paper reports the structural and dielectric properties of Ba(Ti_1 − xZr_x)O₃ (x = 0-0.3) ceramics. Single-phase solid solutions of the samples were determined by X-ray diffraction. Microscopic observation by scanning electron microscope revealed dense, single-phase microstructure with large grains (20-60 μm). The evolution of dielectric behavior from a sharp ferroelectric peak (for x ≤ 0.08) to a round dielectric peak (for 0.15 ≤ x ≤ 0.25) with pinched phase transitions and successively to a ferroelectric relaxor (for x = 0.3) was observed with increasing Zr concentration. Compared with pure BaTiO₃, broaden dielectric peaks with high dielectric constant of 25,000-40,000 and reasonably low loss (tanδ: 0.01-0.06) in the Ba(Ti_1 − xZr_x)O₃ ceramics have been observed, indicating great application potential as a dielectric material.